Abstract: A method of printing a product code includes providing a printer and a substrate. A product code is determined. The product code includes a plurality of characters and a key code. The key code includes an interleaved character including a combination of a first character and a second character selected from the plurality of characters. The printer is controlled to print the product code on the substrate.

Abstract: A method of printing a modified product code includes providing a printer and a substrate. An initial product code is determined. The initial product code includes a plurality of unmodified characters. A modified product code is determined. The modified product code includes at least one modified character that is different from a corresponding one of the plurality of unmodified characters of the initial product code. The modified character is a function at least in part by of initial product code. The printer is controlled to print the modified product code on the substrate.

Abstract: A process for metallization of a workpiece, such as a semiconductor workpiece. In an embodiment, an alkaline electrolytic copper bath is used to electroplate copper onto a seed layer, electroplate copper directly onto a barrier layer material, or enhance an ultra-thin copper seed layer which has been deposited on the barrier layer using a deposition process such as PVD. The resulting copper layer provides an excellent conformal copper coating that fills trenches, vias, and other microstructures in the workpiece. When used for seed layer enhancement, the resulting copper seed layer provide an excellent conformal copper coating that allows the microstructures to be filled with a copper layer having good uniformity using electrochemical deposition techniques. Further, copper layers that are electroplated in the disclosed manner exhibit low sheet resistance and are readily annealed at low temperatures.

Abstract: A method, executed by a server, for providing answers on one or more topics from a set of experts on each topic to questions posed by users. Users can direct questions to one or more specific experts, who in turn can answer the questions, refer the questions to other experts, or both. The server automatically organizes and stores questions and answers in various fora. An administrator can take advantage of the design of the system to create or change a forum without having to write or change low-level code.

Abstract: A process for metallization of a workpiece, such as a semiconductor workpiece. In an embodiment, an alkaline electrolytic copper bath is used to electroplate copper onto a seed layer, electroplate copper directly onto a barrier layer material, or enhance an ultra-thin copper seed layer which has been deposited on the barrier layer using a deposition process such as PVD. The resulting copper layer provides an excellent conformal copper coating that fills trenches, vias, and other microstructures in the workpiece. When used for seed layer enhancement, the resulting copper seed layer provide an excellent conformal copper coating that allows the microstructures to be filled with a copper layer having good uniformity using electrochemical deposition techniques. Further, copper layers that are electroplated in the disclosed manner exhibit low sheet resistance and are readily annealed at low temperatures.

Abstract: A facility for selecting and refining electrical parameters for processing a microelectronic workpiece in a processing chamber is described. The facility initially configures the electrical parameters in accordance with either a numerical of the processing chamber or experimental data derived from operating the actual processing chamber. After a workpiece is processed with the initial parameter configuration, the results are measured and a sensitivity matrix based upon the numerical model of the processing chamber is used to select new parameters that correct for any deficiencies measured in the processing of the first workpiece. These parameters are then used in processing a second workpiece, which may be similarly measured, and the results used to further refine the parameters.

Abstract: In a stick electrode for electric arc welding having a center alloy wire and an outer cellulose coating which coating includes powdered fluxing agents, alloy powder, cellulose powder and a binder. The improvement involves forming the binder as a solution of sodium silicate and 61-78 percent by weight of the binder. The binder comprises 25-35% of the coating to produce at least about 4% by weight of water in the electrode. Furthermore, the fluxing agent is titanium dioxide with a percentage greater than 12 percent of the coating.

Abstract: A method of measuring the quality of a stick electrode used in forming the root bead of a pipe joint, which electrode has a wire diameter, a length substantially greater than 12 inches and an upper exposed rod head. The method comprises: preparing a standardized workpiece including two spaced plates with a groove between the plates having a set profile including a lower gap duplicating the root gap of the pipe joint and mounting the standardized workpiece on an incline with the groove facing upwardly where the incline is at a fixed known angle. Then a stick electrode of the type to be measured is selected and the rod head of the selected electrode is connected to the power lead of a DC power source set to a given output current correlated with the type of electrode.

Abstract: A stick electrode for depositing an high strength weld metal bead on a workpiece where the yield strength of the weld metal is between 85 ksi and 125 ksi irrespective of the cooling rate. The electrode deposits weld metal having 0.80-1.85% by weight manganese, 0.25-0.50% by weight molybdenum, 1.25-2.50% by weight nickel, and less than 0.07% by weight carbon, wherein the ratios of the carbon, manganese and molybdenum are adjusted to provide a carbon equivalent in deposited weld metal in the range of 0.17 to 0.30 and preferably less than 0.22.

Abstract: Methods for rating welding electrodes are presented, in which a standardized vertical-down double cap pass welding procedure is performed using a test electrode to create a test weld on a substantially flat workpiece surface, and the electrode is rated according to the amount of porosity in the test weld. A first vertical-down bead-on-plate welding operation is performed to create a substantially straight first weld bead on the workpiece surface, followed by a standardized moderate first slag removal operation to expose an upper portion of the first bead while leaving some slag along one or both longitudinal sides of the first weld bead. A standardized second vertical-down welding operation is then performed with the test electrode to cover the first weld, and another slag removal operation is used to remove any remaining slag. The test electrode is then rated according to the ratio of the number of visually discernable pores in the second weld bead divided by the test weld length.

Abstract: Stick welding electrode rating and ranking procedures are provided for determining stackability performance of stick electrodes for pipe welding operations. The rating technique involves performance of a standardized vertical down weld procedure using a stick electrode to form a weld bead in a test workpiece groove, in which the electrode is maintained during welding at a substantially constant angle relative to the workpiece groove. The electrode is advanced toward the groove at a slow speed to deposit molten metal in the groove while keeping the molten metal above the stick electrode end or the arc thereof without dripping. The resulting bead distance is measured along with the welding time and the stick electrode is rated according to a ratio of the weld time and the bead distance.

Abstract: A facility for selecting and refining electrical parameters for processing a microelectronic workpiece in a processing chamber is described. The facility initially configures the electrical parameters in accordance with either a mathematical model of the processing chamber or experimental data derived from operating the actual processing chamber. After a workpiece is processed with the initial parameter configuration, the results are measured and a sensitivity matrix based upon the mathematical model of the processing chamber is used to select new parameters that correct for any deficiencies measured in the processing of the first workpiece. These parameters are then used in processing a second workpiece, which may be similarly measured, and the results used to further refine the parameters.

Abstract: A facility for selecting and refining electrical parameters for processing a microelectronic workpiece in a processing chamber is described. The facility initially configures the electrical parameters in accordance with either a mathematical model of the processing chamber or experimental data derived from operating the actual processing chamber. After a workpiece is processed with the initial parameter configuration, the results are measured and a sensitivity matrix based upon the mathematical model of the processing chamber is used to select new parameters that correct for any deficiencies measured in the processing of the first workpiece. These parameters are then used in processing a second workpiece, which may be similarly measured, and the results used to further refine the parameters.

Abstract: A facility for selecting and refining electrical parameters for processing a microelectronic workpiece in a processing chamber is described. The facility initially configures the electrical parameters in accordance with either a numerical of the processing chamber or experimental data derived from operating the actual processing chamber. After a workpiece is processed with the initial parameter configuration, the results are measured and a sensitivity matrix based upon the numerical model of the processing chamber is used to select new parameters that correct for any deficiencies measured in the processing of the first workpiece. These parameters are then used in processing a second workpiece, which may be similarly measured, and the results used to further refine the parameters.

Abstract: A facility for selecting and refining electrical parameters for processing a microelectronic workpiece in a processing chamber is described. The facility initially configures the electrical parameters in accordance with either a mathematical model of the processing chamber or experimental data derived from operating the actual processing chamber. After a workpiece is processed with the initial parameter configuration, the results are measured and a sensitivity matrix based upon the mathematical model of the processing chamber is used to select new parameters that correct for any deficiencies measured in the processing of the first workpiece. These parameters are then used in processing a second workpiece, which may be similarly measured, and the results used to further refine the parameters.

Abstract: A rotor that may be used by itself or in a processing machine for processing semiconductor wafers includes two pairs of combs. A lock down mechanism has a lock bar, temporarily engaged and moved by a loading/unloading robot, drives a retainer against the edges of the wafers, to better hold them in place during processing. Contamination via generation of particles is reduced. Combs on the rotor have a resilient strip. The lower edges of the wafers compress slightly into or deflect the resilient strip, when urged into place by the lock down mechanism.

Abstract: A process for metallization of a workpiece, such as a semiconductor workpiece. In an embodiment, an alkaline electrolytic copper bath is used to electroplate copper onto a seed layer, electroplate copper directly onto a barrier layer material, or enhance an ultra-thin copper seed layer which has been deposited on the barrier layer using a deposition process such as PVD. The resulting copper layer provides an excellent conformal copper coating that fills trenches, vias, and other microstructures in the workpiece. When used for seed layer enhancement, the resulting copper seed layer provide an excellent conformal copper coating that allows the microstructures to be filled with a copper layer having good uniformity using electrochemical deposition techniques. Further, copper layers that are electroplated in the disclosed manner exhibit low sheet resistance and are readily annealed at low temperatures.

Abstract: A method and apparatus for processing a microelectronic workpiece using metrology. The apparatus can include one or more processing or transport units, a metrology unit, and a control unit coupled to the metrology unit and at least one of the processing or transport units. The control unit can modify a process recipe or a process sequence of the processing unit based on a feed forward or a feed back signal from the metrology unit. The control unit can also provide instructions to the transport unit to move the workpiece to a selected processing unit. The processing unit can include, inter alia, a seed layer deposition unit, a process layer electrochemical deposition unit, a seed layer enhancement unit, a chemical mechanical polishing unit, and/or an annealing chamber arranged for sequential processing of a workpiece. The processing units can be controlled as an integrated system using one or more metrology units, or a separate metrology unit can provide input to the processing units.

Abstract: The present invention provides an improved rocker arm system for actuating poppet valves in high performance internal combustion engines. The rocker arm provides trunnion journals extending from each side fitted to outboard bearing mounts to guide the motion of the rocker arm. An I-beam rocker arm having high stiffness and low mass is disclosed.

Abstract: A facility for selecting and refining electrical parameters for processing a microelectronic workpiece in a processing chamber is described. The facility initially configures the electrical parameters in accordance with either a numerical of the processing chamber or experimental data derived from operating the actual processing chamber. After a workpiece is processed with the initial parameter configuration, the results are measured and a sensitivity matrix based upon the numerical model of the processing chamber is used to select new parameters that correct for any deficiencies measured in the processing of the first workpiece. These parameters are then used in processing a second workpiece, which may be similarly measured, and the results used to further refine the parameters.