Patents by Inventor Robert B. Hammond
Robert B. Hammond has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8990742Abstract: A method of designing an acoustic microwave filter in accordance with frequency response requirements.Type: GrantFiled: March 14, 2014Date of Patent: March 24, 2015Assignee: Resonant Inc.Inventors: Patrick J. Turner, Richard N. Silver, Balam Quitze Andres Willemsen Cortes, Kurt F. Raihn, Neal O. Fenzi, Robert B. Hammond
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Publication number: 20140320236Abstract: An acoustic microwave filter comprises an input and an output, and a plurality of acoustic resonators coupled between the input and the output. The difference between the lowest resonant frequency and the highest resonant frequency of a plurality of resonators in the filter is at least 1.25 times the frequency separation of the resonator with the highest resonant frequency in the plurality of resonators.Type: ApplicationFiled: March 13, 2014Publication date: October 30, 2014Applicant: RESONANT LLCInventors: Richard N. Silver, Kurt F. Raihn, Neal O. Fenzi, Robert B. Hammond
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Publication number: 20140266510Abstract: An acoustic microwave filter comprises an input and an output, and a plurality of acoustic resonators coupled between the input and the output. The difference between the lowest resonant frequency and the highest resonant frequency of a plurality of resonators in the filter is at least 1.25 times the frequency separation of the resonator with the highest resonant frequency in the plurality of resonators. Another acoustic microwave filter comprises an input and an output, and a plurality of acoustic resonators coupled between the input and the output to form a passband. The frequency difference between a local minimum or a local maximum of a return loss magnitude of the acoustic microwave filter and the edge of the passband is at least once the frequency separation of the resonator with the highest resonant frequency.Type: ApplicationFiled: July 2, 2013Publication date: September 18, 2014Inventors: Richard N. Silver, Kurt F. Raihn, Neal O. Fenzi, Robert B. Hammond
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Publication number: 20140266511Abstract: Methods for the design of microwave filters comprises comprising preferably the steps of inputting a first set of filter requirements, inputting a selection of circuit element types, inputting a selection of lossless circuit response variables, calculating normalized circuit element values based on the input parameters, and generate a first circuit, insert parasitic effects to the normalized circuit element values of the first circuit, and output at least the first circuit including the post-parasitic effect circuit values. Additional optional steps include: requirements to a normalized design space, performing an equivalent circuit transformation, unmapping the circuit to a real design space, performing a survey, and element removal optimization. Computer implement software, systems, and microwave filters designed in accordance with the method are included.Type: ApplicationFiled: March 15, 2013Publication date: September 18, 2014Applicant: RESONANT LLCInventors: Patrick J. Turner, Richard N. Silver, Balam Quitze Andres Willemsen Cortes, Kurt F. Raihn, Neal O. Fenzi, Robert B. Hammond
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Publication number: 20140282311Abstract: A method of designing an acoustic microwave filter in accordance with frequency response requirements.Type: ApplicationFiled: March 14, 2014Publication date: September 18, 2014Inventors: Patrick J. Turner, Richard N. Silver, Balam Quitze Andres Willemsen Cortes, Kurt F. Raihn, Neal O. Fenzi, Robert B. Hammond
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Patent number: 8701065Abstract: A method of designing an acoustic microwave filter comprises selecting a filter section based on frequency response requirements. The filter section includes an input, an output, and a plurality of circuit elements. The circuit elements have at least in-line acoustic resonators or in-shunt acoustic resonators. The method further comprises selecting a value for each circuit element, selecting a number of filter sections, and cascading the selected number of filter sections to create a cascaded filter circuit design, such that at least one pair of immediately adjacent filter sections are connected to each other via their inputs or their outputs. The method further comprises adding parasitic effects to the cascaded filter circuit design to create a pre-optimized filter circuit design, optimizing the pre-optimized filter circuit design to create a final filter circuit design, and constructing the acoustic microwave filter based on the final filter circuit design.Type: GrantFiled: July 10, 2013Date of Patent: April 15, 2014Assignee: Resonant LLCInventors: Richard N. Silver, Kurt F. Raihn, Neal O. Fenzi, Robert B. Hammond
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Patent number: 8030925Abstract: A method of tuning a high temperature superconductor (HTS) resonator includes the steps of providing a HTS inductor and a HTS capacitor, the HTS capacitor being electrically connected to the HTS inductor. A tuning body is provided adjacent to the HTS inductor and the HTS capacitor. The relative position of the tuning body with respect to the HTS inductor and the HTS capacitor is altered so as to tune the resonator. A tunable resonant circuit is provided that includes a substrate having a planar surface. At least one resonator formed from HTS material is disposed on the substrate, the resonator having one or more turns that when combined, turn through greater than 360°.Type: GrantFiled: March 12, 2007Date of Patent: October 4, 2011Assignee: Superconductor Technologies, Inc.Inventors: Robert B. Hammond, Jonathan Z. Sun, Douglas J. Scalapino, Timothy W. James, Lincoln C. Bourne
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Patent number: 7190165Abstract: A method of tuning a high temperature superconductor (HTS) resonator includes the steps of providing a HTS inductor and a HTS capacitor, the HTS capacitor being electrically connected to the HTS inductor. A tuning body is provided adjacent to the HTS inductor and the HTS capacitor. The relative position of the tuning body with respect to the HTS inductor and the HTS capacitor is altered so as to tune the resonator. A tunable resonant circuit is provided that includes a substrate having a planar surface. At least one resonator formed from HTS material is disposed on the substrate, the resonator having one or more turns that when combined, turn through greater than 360°.Type: GrantFiled: April 12, 2004Date of Patent: March 13, 2007Assignee: Superconductor Technologies, Inc.Inventors: Robert B Hammond, Jonathan Z. Sun, Douglas J. Scalapino, Timothy W. James, Lincoln C. Bourne
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Patent number: 6727702Abstract: A method of tuning a high temperature superconductor (HTS) resonator includes the steps of providing a HTS inductor and a HTS capacitor, the HTS capacitor being electrically connected to the HTS inductor. A tuning body is provided adjacent to the HTS inductor and the HTS capacitor. The relative position of the tuning body with respect to the HTS inductor and the HTS capacitor is altered so as to tune the resonator. A tunable resonant circuit is provided that includes a substrate having a planar surface. At least one resonator formed from HTS material is disposed on the substrate, the resonator having one or more turns that when combined, turn through greater than 360°.Type: GrantFiled: March 19, 2003Date of Patent: April 27, 2004Assignee: Superconductor Technologies, Inc.Inventors: Robert B Hammond, Jonathan Z. Sun, Douglas J. Scalapino, Timothy W. James, Lincoln C. Bourne
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Publication number: 20040021466Abstract: A method of tuning a high temperature superconductor (HTS) resonator includes the steps of providing a HTS inductor and a HTS capacitor, the HTS capacitor being electrically connected to the HTS inductor. A tuning body is provided adjacent to the HTS inductor and the HTS capacitor. The relative position of the tuning body with respect to the HTS inductor and the HTS capacitor is altered so as to tune the resonator. A tunable resonant circuit is provided that includes a substrate having a planar surface. At least one resonator formed from HTS material is disposed on the substrate, the resonator having one or more turns that when combined, turn through greater than 360°.Type: ApplicationFiled: March 19, 2003Publication date: February 5, 2004Applicant: Superconductor Technologies, Inc.Inventors: Robert B. Hammond, Jonathan Z. Sun, Douglas J. Scalapino, Timothy W. James, Lincoln C. Bourne
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Patent number: 6633208Abstract: Multi-stage electric filters with improved intermodulation-distortion characteristics and a method for designing such electric filters is provided. In general, the invention may include a multi-resonator electric filter in which one or more of the resonators have been intentionally designed to have a different IP and/or Q than the other resonators in the electric filter. In one case, the electric filters include a 4-resonator Chebyshev narrow pass-band filter with at least the first resonator having a Q and/or IP different from at least one other resonator in the filter. The filter thereby has improved IMD power over conventional designed filters while maintaining high Q. In a preferred embodiment the filter may include a superconducting material. The relative Q and IP of the respective resonators in the improved filter may depend on the relative strength of in-band and out-of-band signals.Type: GrantFiled: June 19, 2001Date of Patent: October 14, 2003Assignee: Superconductor Technologies, Inc.Inventors: Markku I. Salkola, Robert B. Hammond, Neal Fenzi
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Publication number: 20020198110Abstract: Multi-stage electric filters with improved intermodulation-distortion characteristics and a method for designing such electric filters is provided. In general, the invention may include a multi-resonator electric filter in which one or more of the resonators have been intentionally designed to have a different IP and/or Q than the other resonators in the electric filter. In one case, the electric filters include a 4-resonator Chebyshev narrow pass-band filter with at least the first resonator having a Q and/or IP different from at least one other resonator in the filter. The filter thereby has improved IMD power over conventional designed filters while maintaining high Q. In a preferred embodiment the filter may include a superconducting material. The relative Q and IP of the respective resonators in the improved filter may depend on the relative strength of in-band and out-of-band signals.Type: ApplicationFiled: June 19, 2001Publication date: December 26, 2002Applicant: Superconductor Technologies, Inc.Inventors: Markku I. Salkola, Robert B. Hammond, Neal Fenzi
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Patent number: 5358926Abstract: Novel articles are provided of thin super-conductive thallium-based copper oxide layers on inorganic, usually crystalline substrates. Novel methods are provided for ease of producing such articles, particularly involving sol-gel techniques and laser ablation. The articles have a highly oriented superconductive thallium-based copper oxide film, particularly epitaxial, with high superconductive transition temperatures and desirable electrical properties. The subject articles find use in a wide variety of electronic applications, particularly in microwave and millimeter wave devices.Type: GrantFiled: July 29, 1993Date of Patent: October 25, 1994Assignee: Superconductor Technologies Inc.Inventors: William L. Olson, Michael M. Eddy, Robert B. Hammond, Timothy W. James, McDonald Robinson
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Patent number: 5328893Abstract: Active superconductive devices are formed having a variable conductive element in electromagnetic contact with a superconductor. In one embodiment, a variable ohmic conductive device, such as a photoconductor, is placed adjacent a superconductor. By varying the optical radiation on the photoconductor, the electromagnetic environment adjacent the superconductor is changed, resulting in changed electrical properties. The superconductor may be patterned as a reject filter, with a photoconductor forming a microwave switch. Alternatively, a delay line plus variable ohmic element forms a phase shifter.Type: GrantFiled: June 24, 1991Date of Patent: July 12, 1994Assignee: Superconductor Technologies, Inc.Inventors: Jonathan Z. Sun, Robert B. Hammond, Douglas J. Scalapino
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Patent number: 5071830Abstract: An epitaxial thallium-based copper oxide superconducting film is formed on a crystalline substrate by metalorganic deposition which comprises forming a film of carboxylate soap solution on said substrate, prepyrolyzing said film at a temperature of 350.degree. C. or less and pyrolyzing said film at a temperature of 800.degree.900.degree. C. in the presence of oxygen and an overpressure of thallium for a sufficient time to produce said epitaxial superconducting film.Type: GrantFiled: August 31, 1988Date of Patent: December 10, 1991Assignee: Superconductor Technologies, Inc.Inventors: William L. Olson, Michael M. Eddy, Robert B. Hammond, Timothy W. James, McDonald Robinson
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Patent number: 4948741Abstract: A photoconductive element of polycrystalline silicon is provided with intrinsic response time which does not limit overall circuit response. An undoped polycrystalline silicon layer is deposited by LPCVD to a selected thickness on silicon dioxide. The deposited polycrystalline silicon is then annealed at a selected temperature and for a time effective to obtain crystal sizes effective to produce an enhanced current output. The annealed polycrystalline layer is subsequently exposed and damaged by ion implantation to a damage factor effective to obtain a fast photoconductive response.Type: GrantFiled: February 23, 1989Date of Patent: August 14, 1990Assignee: The United States of America as represented by the United States Department of EnergyInventors: Robert B. Hammond, Douglas R. Bowman
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Patent number: 4821091Abstract: A photoconductive element of polycrystalline silicon is provided with intrinsic response time which does not limit overall circuit response. An undoped polycrystalline silicon layer is deposited by LPCVD to a selected thickness on silicon dioxide. The deposited polycrystalline silicon is then annealed at a selected temperature and for a time effective to obtain crystal sizes effective to produce an enhanced current output. The annealed polycrystalline layer is subsequently exposed and damaged by ion implantation to a damage factor effective to obtain a fast photoconductive response.Type: GrantFiled: January 21, 1988Date of Patent: April 11, 1989Assignee: The United States of America as represented by the United States Department of EnergyInventors: Robert B. Hammond, Douglas R. Bowman
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Patent number: 4490709Abstract: A photoconducting device fabricated from Fe-doped, semi-insulating InP crystals exhibits an exponential decay transient with decay time inversely related to Fe concentration. Photoconductive gain as high as 5 is demonstrated in photoconducting devices with AuGe and AuSn contacts. Response times from 150 to 1000 picoseconds can be achieved.Type: GrantFiled: December 6, 1982Date of Patent: December 25, 1984Assignee: The United States of America as represented by the United States Department of EnergyInventors: Robert B. Hammond, Nicholas G. Paulter, Ronald S. Wagner
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Patent number: 4243888Abstract: The disclosure relates to an apparatus and method for laser beam alignment. Thermoelectric properties of a disc in a laser beam path are used to provide an indication of beam alignment and/or automatic laser alignment.Type: GrantFiled: May 10, 1979Date of Patent: January 6, 1981Assignee: The United States of America as represented by the United States Department of EnergyInventors: Charles R. Gruhn, Robert B. Hammond