Abstract: In one implementation, a method of forming a field effect transistor includes etching an opening into source/drain area of a semiconductor substrate. The opening has a base comprising semiconductive material. After the etching, insulative material is formed within the opening over the semiconductive material base. The insulative material less than completely fills the opening and has a substantially uniform thickness across the opening. Semiconductive source/drain material is formed within the opening over the insulative material within the opening. A transistor gate is provided operatively proximate the semiconductive source/drain material. Other aspects and implementations are contemplated.

Abstract: Lightweight wheeled surface vehicles of various types and sizes constructed chiefly from commercial off-the-shelf (COTS) parts, incorporate alternate suspensions, e.g. swingarms. One embodiment provides a vehicle incorporating a cellular body design wherein the vehicle is constructed from a varying number of substantially identical cells, assembled end-to-end to produce vehicles of varying size and capacity. Additional embodiments include lightweight passenger vehicles, such as automobiles, manufacturable from COTS parts, including independent suspensions providing large vertical wheel travel. One embodiment provides an automobile-type vehicle having a roll-cage frame, and a lightweight, exo-skeleton external frame, provided in multiple wheel configurations, e.g. three- or four-wheeled configurations. Body panels are quickly and easily attached to the tubular frame and also easily removed and switched and readily replaceable. Bicycles are equipped with electric pedal assist units.

Abstract: In one implementation, a method of forming a field effect transistor includes etching an opening into source/drain area of a semiconductor substrate. The opening has a base comprising semiconductive material. After the etching, insulative material is formed within the opening over the semiconductive material base. The insulative material less than completely fills the opening and has a substantially uniform thickness across the opening. Semiconductive source/drain material is formed within the opening over the insulative material within the opening. A transistor gate is provided operatively proximate the semiconductive source/drain material. Other aspects and implementations are contemplated.

Abstract: In one implementation, a method of forming a field effect transistor includes etching an opening into source/drain area of a semiconductor substrate. The opening has a base comprising semiconductive material. After the etching, insulative material is formed within the opening over the semiconductive material base. The insulative material less than completely fills the opening and has a substantially uniform thickness across the opening. Semiconductive source/drain material is formed within the opening over the insulative material within the opening. A transistor gate is provided operatively proximate the semiconductive source/drain material. Other aspects and implementations are contemplated.

Abstract: An adjustable snap-fit display assembly is used in a product display assembly. The display assembly stores and displays products of a variety of shapes and sizes and automatically delivers the products to the front of the display assembly. The adjustable display assembly includes a frame and a product supporting and feeding assembly. The product supporting and feeding assembly has tracks and, in some instances, dividers. The product tracks and dividers can be separately formed or integrated into a single component. The tracks and/or dividers are considered insertable components that can be added or removed as needed and that can be separated by varying distances depending on the width of product to be displayed. The insertable components generally are freely slideable and are snap-fit onto the frame. The product supporting and feeding assembly allows product to be fed forward to a front fence such that all or almost all of the available shelf depth can be used.

Abstract: A vertical transistor having a wrap-around-gate and a method of fabricating such a transistor. The wrap-around-gate (WAG) vertical transistors are fabricated by a process in which source, drain and channel regions of the transistor are automatically defined and aligned by the fabrication process, without photolithographic patterning.

Abstract: A contact structure and a method of forming thereof for semiconductor devices or assemblies are described. The method provides process steps to create a contact structure encompassed by a sacrificial contact medium having an opening therein that is lined with a conductive spacer liner that effectively prevents the contact structure from being damaged during removal of the surrounding sacrificial contact medium material. The sacrificial contact medium is then replaced with a non-boron doped dielectric material.

Abstract: A fragrance composition for use in hydrophobic systems, such as candles, comprising at least one odorant selected for having a minimum cold throw value (?) and a minimum hot throw value (?) is disclosed. A method of formulating a fragrance composition for hydrophobic systems, such as candles, comprising selecting at least one odorant to form a desired fragrance, each odorant having a minimum cold throw value (?) and hot throw value (?), and incorporating the fragrance into a hydrophobic carrier, such as wax material, is disclosed.

Abstract: In one implementation, a method of forming a field effect transistor includes etching an opening into source/drain area of a semiconductor substrate. The opening has a base comprising semiconductive material. After the etching, insulative material is formed within the opening over the semiconductive material base. The insulative material less than completely fills the opening and has a substantially uniform thickness across the opening. Semiconductive source/drain material is formed within the opening over the insulative material within the opening. A transistor gate is provided operatively proximate the semiconductive source/drain material. Other aspects and implementations are contemplated.

Abstract: A communication system (500) includes a plurality of subscriber systems (510) coupled to a plurality of twisted pair data lines (520). Each subscriber system (510) has an availability guarantee value, which may specify a level of service for the subscriber system (510). A communication server (502) is coupled to the plurality of subscriber systems (510). The communication server (502) selectively couples a subscriber system (510), responsive to a request for service, to either a first modem pool (530) or a second modem pool (540) based on the availability guarantee value associated with the subscriber system (510). Communication server (502) can also provide a soft-termination state and dynamic network address allocation for subscriber systems (510).

Abstract: There is provided a system for regulating access and managing distribution of content in a network, such as the Internet. The system includes communication gateways, installed at a subscriber site, internet control points, installed remotely, and various network elements installed throughout the network. The communication gateways and network elements operate in conjunction with the internet control points to restrict or allow access to specified Internet sites and to manage efficient distribution of content such as music, video, games, broadband data, real-time audio and voice applications, and software to subscribers.

Abstract: In one implementation, a method of forming a field effect transistor includes etching an opening into source/drain area of a semiconductor substrate. The opening has a base comprising semiconductive material. After the etching, insulative material is formed within the opening over the semiconductive material base. The insulative material less than completely fills the opening and has a substantially uniform thickness across the opening. Semiconductive source/drain material is formed within the opening over the insulative material within the opening. A transistor gate is provided operatively proximate the semiconductive source/drain material. Other aspects and implementations are contemplated.

Abstract: In one implementation, a method of forming a field effect transistor includes etching an opening into source/drain area of a semiconductor substrate. The opening has a base comprising semiconductive material. After the etching, insulative material is formed within the opening over the semiconductive material base. The insulative material less than completely fills the opening and has a substantially uniform thickness across the opening. Semiconductive source/drain material is formed within the opening over the insulative material within the opening. A transistor gate is provided operatively proximate the semiconductive source/drain material. Other aspects and implementations are contemplated.

Abstract: In one implementation, a method of forming a field effect transistor includes etching an opening into source/drain area of a semiconductor substrate. The opening has a base comprising semiconductive material. After the etching, insulative material is formed within the opening over the semiconductive material base. The insulative material less than completely fills the opening and has a substantially uniform thickness across the opening. Semiconductive source/drain material is formed within the opening over the insulative material within the opening. A transistor gate is provided operatively proximate the semiconductive source/drain material. Other aspects and implementations are contemplated.

Abstract: In one implementation, a method of forming a field effect transistor includes etching an opening into source/drain area of a semiconductor substrate. The opening has a base comprising semiconductive material. After the etching, insulative material is formed within the opening over the semiconductive material base. The insulative material less than completely fills the opening and has a substantially uniform thickness across the opening. Semiconductive source/drain material is formed within the opening over the insulative material within the opening. A transistor gate is provided operatively proximate the semiconductive source/drain material. Other aspects and implementations are contemplated.

Abstract: A semiconductor device includes a cross diffusion barrier layer sandwiched between a gate layer and an electrode layer. The gate layer has a first gate portion of doped polysilicon of first conductivity type adjacent to a second gate portion doped polysilicon of second conductivity type. The cross diffusion barrier layer includes a combination of silicon and nitrogen. The cross diffusion barrier layer adequately prevents cross diffusion between the first and second gate portions while causing no substantial increase in the resistance of the gate layer.

Abstract: A method and system for identifying alternate contact information of a specific type; particularly, by providing an inputted Email address in a query, one or more alternate Email addresses can be returned to the query, using an automated database. The system is queried using an entity's known Email address, which, in turn, is associated with other contact points for the entity, such as names and postal addresses, and the other contact points are then used to identify alternative Email addresses for the targeted entity either at the time of the query or in preparation of the database, and the alternative Email address(es) are then outputted to the requestor from the system. The method uses knowledge of contact points of different types Figures for the same Figuresentity to identify alternate contact points of a single type, within a database of contact information.

Abstract: A semiconductor device includes a cross diffusion barrier layer sandwiched between a gate layer and an electrode layer. The gate layer has a first gate portion of doped polysilicon of first conductivity type adjacent to a second gate portion doped polysilicon of second conductivity type. The cross diffusion barrier layer includes a combination of silicon and nitrogen. The cross diffusion barrier layer adequately prevents cross diffusion between the first and second gate portions while causing no substantial increase in the resistance of the gate layer.

Abstract: In one implementation, a method of forming a field effect transistor includes etching an opening into source/drain area of a semiconductor substrate. The opening has a base comprising semiconductive material. After the etching, insulative material is formed within the opening over the semiconductive material base. The insulative material less than completely fills the opening and has a substantially uniform thickness across the opening. Semiconductive source/drain material is formed within the opening over the insulative material within the opening. A transistor gate is provided operatively proximate the semiconductive source/drain material. Other aspects and implementations are contemplated.

Abstract: Embodiments of the present invention provide a spoken language interface to an information database. A grammars database based on the entries contained in the information database may be generated. The entries in the grammars database may be a compact representation of the entries in the information database. An index database based on the entries contained in the information database may be generated. The grammars database and the index database may be updated periodically based on updated entries contained in the information database. A recognized result of a user's communication based on the updated grammars database may be generated. The updated index database may be searched for a list of matching entries that match the recognized result. The list of matching entries may be output.