Abstract: One or more embodiments are directed to establishing electrical connections through silicon wafers with low resistance and high density, while at the same time maintaining processability for further fabrication. Such connections through silicon wafers enable low resistance connections from the top side of a silicon wafer to the bottom side of the silicon wafer.

Abstract: One or more embodiments are directed to establishing electrical connections through silicon wafers with low resistance and high density, while at the same time maintaining processability for further fabrication. Such connections through silicon wafers enable low resistance connections from the top side of a silicon wafer to the bottom side of the silicon wafer.

Abstract: A gas sensor that includes a heat source and a gas sensing film. The gas sensing film includes a polycrystalline tungsten trioxide film thermally connected to the heat source and a plurality of islands of gold on a surface of the polycrystalline tungsten trioxide film. The surface of the polycrystalline tungsten trioxide film is exposed between the islands of gold to allow the polycrystalline tungsten trioxide film to sense gas. A first electrode that electrically connected to the polycrystalline tungsten trioxide film and a second electrode is electrically connected to the polycrystalline tungsten trioxide film. The resistance of the polycrystalline tungsten trioxide film between the first electrode and the second electrode changes when the polycrystalline tungsten trioxide film is exposed to a particular type of gas.

Abstract: A gas sensor that includes a heat source and a gas sensing film. The gas sensing film includes a polycrystalline tungsten trioxide film thermally connected to the heat source and a plurality of islands of gold on a surface of the polycrystalline tungsten trioxide film. The surface of the polycrystalline tungsten trioxide film is exposed between the islands of gold to allow the polycrystalline tungsten trioxide film to sense gas. A first electrode that electrically connected to the polycrystalline tungsten trioxide film and a second electrode is electrically connected to the polycrystalline tungsten trioxide film. The resistance of the polycrystalline tungsten trioxide film between the first electrode and the second electrode changes when the polycrystalline tungsten trioxide film is exposed to a particular type of gas.

Abstract: The present disclosure includes sensing device embodiments. One sensing device includes a heater layer, a resistance detector layer, constructed and arranged to indicate a temperature value based upon a correlation to a detected resistance value, an electrode layer, and a sensing layer.

Abstract: The present disclosure includes sensing device embodiments. One sensing device includes a heater layer, a resistance detector layer, constructed and arranged to indicate a temperature value based upon a correlation to a detected resistance value, an electrode layer, and a sensing layer.

Abstract: A method of forming CMOS circuitry integrated with MEMS devices includes bonding a wafer to a top surface layer having contacts formed to CMOS circuitry. A handle wafer is then removed from one of the top or bottom surfaces of the CMOS circuitry, and MEMS devices are formed in a remaining silicon layer.

Abstract: An integrated vacuum package having an added volume on a perimeter within the perimeter of a bonding seal between two wafers. The added volume of space may be an etching of material from the inside surface of the top wafer. This wafer may have vent holes that may be sealed to maintain a vacuum within the volume between the two wafers after the pump out of gas and air. The inside surface of the top wafer may have an anti-reflective pattern. Also, an anti-reflective pattern may be on the outside surface of the top wafer. The seal between the two wafers may be ring-like and have a spacer material. Also, it may have a malleable material such as solder to compensate for any flatness variation between the two facing surfaces of the wafers.

Abstract: A fuel cell, fuel cell array and methods of forming the same are disclosed. The fuel cell can be made by forming a first aperture defined by a first aperture surface through a first electrode layer and forming a second aperture defined by a second aperture surface through a second electrode layer. A proton exchange membrane is laminated between the first electrode layer and the second electrode layer. At least a portion of the first aperture is at least partially aligned with the second aperture.

Abstract: A metal oxide semiconductor (MOS) device includes a substrate, a lower sacrificial membrane adjacent to the substrate, an upper thin film structure adjacent to the lower membrane, and a MOS material deposited on the upper thin film structure.

Abstract: An infrared camera includes a lens to receive infrared radiation from an image to be viewed. A thermal detector is positioned to receive the infrared radiation from the lens and vary the amount of light transmitted through the thermal detector responsive to the infrared radiation.

Abstract: An integrated vacuum package having an added volume on a perimeter within the perimeter of a bonding seal between two wafers. The added volume of space may be an etching of material from the inside surface of the top wafer. This wafer may have vent holes that may be sealed to maintain a vacuum within the volume between the two wafers after the pump out of gas and air. The inside surface of the top wafer may have an anti-reflective pattern. Also, an anti-reflective pattern may be on the outside surface of the top wafer. The seal between the two wafers may be ring-like and have a spacer material. Also, it may have a malleable material such as solder to compensate for any flatness variation between the two facing surfaces of the wafers.

Abstract: An integrated vacuum package having an added volume on a perimeter within the perimeter of a bonding seal between two wafers. The added volume of space may be an etching of material from the inside surface of the top wafer. This wafer may have vent holes that may be sealed to maintain a vacuum within the volume between the two wafers after the pump out of gas and air. The inside surface of the top wafer may have an anti-reflective pattern. Also, an anti-reflective pattern may be on the outside surface of the top wafer. The seal between the two wafers may be ring-like and have a spacer material. Also, it may have a malleable material such as solder to compensate for any flatness variation between the two facing surfaces of the wafers.

Abstract: A method of forming CMOS circuitry integrated with MEMS devices includes bonding a wafer to a top surface layer having contacts formed to CMOS circuitry. A handle wafer is then removed from one of the top or bottom surfaces of the CMOS circuitry, and MEMS devices are formed in a remaining silicon layer.

Abstract: Embodiments of the invention relate to a fluid containment structure for a micro analyzer comprising one or more shelled thermal structures in contact with a thermally isolated component of the analyzer and wherein the shelled thermal structure comprises a conformal film and also comprises three walls of a channel and the thermally isolated component forms the fourth wall.

Abstract: A gas sensor is provided for detecting one or more gases in a gas sample. The gas sensor includes a substrate, a solid electrolyte layer including lanthanum oxide for sensing carbon dioxide, a heating element thermally coupled to the solid electrolyte layer, and a controller coupled to the heating element and the solid electrolyte layer. The controller heats the heating element so that the solid electrolyte layer reaches an operating. Methods of sensing carbon dioxide and humidity are also disclosed.

Abstract: A metal oxide semiconductor (MOS) device includes a substrate, a lower sacrificial membrane adjacent to the substrate, an upper thin film structure adjacent to the lower membrane, and a MOS material deposited on the upper thin film structure.

Abstract: An optical instrument includes a grating. The grating includes a plurality of plates that form a single first plane. The instrument further includes a mirror surface positioned adjacent to the grating. The mirror surface is positioned in a second plane. In an embodiment, the mirror surface is made of a substrate, a silicon wafer positioned on the substrate, and a mirror etch pit surface on the silicon wafer.

Abstract: A system for determining a gas pressure or gauging a vacuum in a hermetically sealed enclosure. One or more heater structures and one or more temperature sensor structures situated on a substrate may be used in conjunction for measuring a thermal conductivity of a gas in the enclosure. Each heater has significant thermal isolation from each sensor structure. Electronics connected to each heater and sensor of their respective structures may provide processing to calculate the pressure or vacuum in the enclosure. The enclosure may contain various electronic components such as bolometers.

Abstract: A flow sensor system and a method for fabricating the same. A substrate is provided, comprising a detector wafer upon which a flow sensor is formed. One or more shells can then be configured upon the substrate whose walls form a flow channel. The flow channel is fabricated directly upon the substrate in a manner that allows the flow channel to couple heat transfer directly to the flow sensor in order to eliminate the need for two or more different types of sacrificial layers during the fabrication of the flow sensor upon the substrate and in which the shell(s) is coupled with fluidic measurement to provide for the flow sensor.