Abstract: A sensor element that is adapted to respond to radiation, and which is adapted to the manufacture of a sensor array is manufactured into a single crystal semiconductor means such as silicon. An anisotropically etched pit is provided under the sensing surface, and the pit generally corresponds to the geometry of the sensor element. The geometry is selected to be rectangular and falls along a selected orientation of the particular crystalline structure used for manufacture of the device to thereby allow a high density of sensor elements to provide an efficient array.

Abstract: A thermoelectric sensor element that is adapted to respond to thermal radiation is capable of manufacture into a sensor array on a single crystal semiconductor means, such as silicon. An anisotropically etched pit is provided under the sensing surface, and the pit generally corresponds to the geometry of the sensor element. The geometry is selected to be rectangular and falls along a selected orientation of the particular crystalline structure used for manufacture of the device to thereby allow for a high density of the sensor elements. The sensor elements are manufactured of two dissimilar metals in a sinuous pattern to provide the thermoelectric effect.

Abstract: A semiconductor device comprising a semiconductor body having a depression formed into the first surface of the body. The device further comprises member means comprising a thermal-to-electric transducer or static electric element, the member means having a predetermined configuration suspended over the depression. The member means is connected to the first surface so that the predetermined configuration is cantilevered over the depression, the depression opening to the first surface around at least a portion of the predetermined configuration. The depression provides substantial physical and thermal isolation between the element and the semiconductor body. In this manner, an integrated semiconductor device provides an environment of substantial physical and thermal isolation between the transducer or element and the semiconductor body.

Abstract: A microbridge air flow sensor which has a sealed etched cavity beneath the silicon nitride diaphragm so that the cavity is not susceptible to contamination from residual films or other material accumulating within the cavity. The cavity thermally isolates the heater and detectors which are encapsulated in the diaphragm. The cavity is fabricated by front side etching of the silicon wafer. Narrow slots are made through the silicon nitride diaphragm to expose a thin film (400 angstrom) rectangle of aluminum. A first etch removes the aluminum leaving a 400 angstrom very shallow cavity under the diaphragm. Anisotropic etch is then introduced into the shallow cavity to etch the silicon pit.

Abstract: A microbridge air flow sensor which has a sealed etched cavity beneath the silicon nitride diaphragm so that the cavity is not susceptible to contamination from residual films or other material accumulating within the cavity. The cavity thermally isolates the heater and detectors which are encapsulated in the diaphragm. The cavity is fabricated by front side etching of the silicon wafer. Narrow slots are made through the silicon nitride diaphragm to expose a thin film (400 angstrom) rectangle of aluminum. A first etch removes the aluminum leaving a 400 angstrom very shallow cavity under the diaphragm. Anisotropic etch is then introduced into the shallow cavity to etch the silicon pit.

Abstract: Certain relationships among the mass flow signal the thermal conductivity, specific heat and density of the fluid measured can be used to correct a mass flowmeter measurement with respect to changes in composition of the fluid.

Abstract: The sensors and heater of a microbridge flow sensor are each compensated for non-linear curvature of the resistance versus temperature curve by the use of a section of permalloy in series with a section of platinum thin film resistor. The platinum exhibits non-linearity in one direction and the permalloy exhibits non-linearity in the opposite direction.

Abstract: A semiconductor device comprising a semiconductor body having a depression formed into the first surface of the body. The device further comprises member means comprising first and second thermal-to-electric transducer or static electric element, the member means having a predetermined configuration suspended over the depression. The member means is connected to the first surface at least at one location, the depression opening to the first surface around at least a portion of the predetermined configuration. The depression provides substantial physical and thermal isolation between the elements and the semiconductor body. In this manner, an integrated semiconductor device provides an environment of substantial physical and thermal isolation between the transducer or element and the semiconductor body.

Abstract: A microscopic size absolute pressure sensor for air or gas of the thermal conductivity type, a silicon nitride covered silicon microchip has an elongated V-groove anisotropically etched in the silicon with a heated silicon nitride bridge element extending over the surface of the V-groove.

Abstract: An composite semiconductor device and a method of making is described. The device includes a semiconductor body with a first surface having a predetermined orientation with respect to a crystalline structure in the semiconductor body and a layer of thin film material covering at least a portion of the first surface. A depression formed in the first surface of the body with the layer of thin film material defines one or more members which have a predetermined configuration bridging the depression. First and second openings in the thin film layer flank each member such that an anisotropic etch placed on the openings undercuts the member to form the depression in a manner which substantially prevents undercutting of the semiconductor body below the thin film material at the boundaries of the predetermined configuration.

Abstract: A flow sensor comprising a pair of thin film heat sensors and a thin film heater is disclosed. A base supports the sensors and heater out of contact with the base with the sensors disposed on opposite sides of the heater. Also disclosed is a semiconductor device comprising a thin film member which comprises an electrical element. The device further comprises a semiconductor body supporting the thin film member out of contact with the body and apparatus for electrically pulsing the electrical element. Such devices are the basis for many types of apparatus, including flow sensors.

Abstract: A semiconductor device comprising a semiconductor body having a depression formed into the first surface of the body. The device further comprises a member comprising a thermal-to-electric transducer or static electric element or electrical-to-thermal element, the member having a predetermined configuration suspended over the depression. The member is connected to the first surface at least at one location, the depression opening to the first surface around at least a portion of the predetermined configuration. The depression provides substantial physical and thermal isolation between the element and the semiconductor body. In this manner, an integrated semiconductor device provides an environment of substantial physical and thermal isolation between the transducer or element and the semiconductor body.

Abstract: A condition responsive sensor is provided with a flow sensor channel means that is interconnected to a capillary tube restriction. The capillary tube restriction can be readily interchanged on the device to change the response of the condition responsive sensor. A very small flow sensor is placed in the flow sensor channel. The flow sensor channel and the capillary tube restriction can be placed generally parallel to one another to reduce the overall length of the device.

Abstract: Disclosed is an integral flow sensor and channel assembly comprising a flow sensor having a sensing element integral to a semiconductor body. The assembly further comprises support structure for supporting the flow sensor, the support structure having a first surface. An enclosed flow channel comprises the first surface formed into a groove running below the sensing element. The flow channel comprises an inlet and an outlet for providing flow across the sensing element. The sensing element is located in the flow channel between the inlet and the outlet. The support structure comprises apparatus for flip-chip mounting the semiconductor body, and the semiconductor body is flip-chip mounted so that the sensing element is positioned over the groove in the support structure.

Abstract: A flow sensor comprising a pair of thin film heat sensors and a thin film heater is disclosed. A base supports the sensors and heater out of contact with the base with the sensors disposed on opposite sides of the heater and closely adjacent thereto.

Abstract: A semiconductor device comprising a semiconductor body having a depression formed into the first surface of the body. The device further comprises member means comprising a thermal-to-electric or static electric element, the member means having a predetermined configuration suspended over the depression. The member means is connected to the first surface at least at one location, the depression opening to the first surface around at least a portion of the predetermined configuration. The depression provides substantial physical and thermal isolation between the element and the semiconductor body. In this manner, an integrated semiconductor device provides an environment of substantial physical and thermal isolation between the element and the semiconductor body.