Patents by Inventor Robert F. Davis
Robert F. Davis has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10720539Abstract: An improved backsheet used in the construction of solar panels is disclosed. A method of manufacturing the backsheet and solar panel comprising the backsheet, including coextrusion processes are also disclosed. Additionally, a photovoltaic solar panel module comprising the backsheet of the invention is disclosed. The backsheet of the instant invention may comprise an exterior layer having inner and outer surfaces, a middle layer, having inner and outer surfaces, and an interior layer having inner and outer surfaces. In one embodiment of the invention, the outer surface of the middle layer may be adjoined to the inner surface of the exterior layer, and the inner surface of the middle layer may be adjoined to the outer surface of the interior layer. The exterior layer, middle layer, and interior layer may be adjoined via a co-extrusion process, thereby eliminating the need for the use of adhesives for bonding the layers of the backsheet together.Type: GrantFiled: September 25, 2012Date of Patent: July 21, 2020Assignee: Tomark-Worthen, LLCInventors: E. David Santoleri, Robert F. Davis
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Patent number: 9470650Abstract: Sensors for sensing/measuring one or more analytes in a chemical environment. Each sensor is based on a semiconductor structure having an interfacial region containing a two-dimensional electron gas (2DEG). A catalyst reactive to the analyte(s) is in contact with the semiconductor structure. Particles stripped from the analyte(s) by the catalyst passivate the surface of the semiconductor structure at the interface between the catalyst and the structure, thereby causing the charge density in the 2DEG proximate the catalyst to change. When this basic structure is incorporated into an electronic device, such as a high-electron-mobility transistor (HEMT) or a Schottky diode, the change in charge density manifests into a change in an electrical response of the device. For example, in an HEMT, the change in charge density manifests as a change in current through the transistor, and, in a Schottky diode, the change in charge density manifests as a change in capacitance.Type: GrantFiled: October 20, 2011Date of Patent: October 18, 2016Assignee: Carnegie Mellon UniversityInventors: Jason Gu, Jacob H. Melby, Robert F. Davis
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Publication number: 20160117936Abstract: A non-transitory processor-readable medium storing code causes a processor at a first vehicle (e.g., a first autonomous vehicle) to generate a first planned path based on a current position of the first vehicle and a mission requirement assigned to the first vehicle. A first planned path associated with a second vehicle (e.g., a second autonomous vehicle), which is based on a current position of the second vehicle and a mission requirement assigned to the second vehicle, is received at the first vehicle. After the first planned path associated with the second vehicle is received, a second planned path is generated based on the first planned path associated with the second vehicle and at least one of the mission requirement assigned to the first vehicle or the first planned path of the first vehicle. The second planned path of the first vehicle is transmitted to the second vehicle.Type: ApplicationFiled: November 11, 2015Publication date: April 28, 2016Applicant: PROXY Technologies, Inc.Inventors: John Solomon KLINGER, Robert F. DAVIS
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Patent number: 9202382Abstract: A non-transitory processor-readable medium storing code causes a processor at a first vehicle (e.g., a first autonomous vehicle) to generate a first planned path based on a current position of the first vehicle and a mission requirement assigned to the first vehicle. A first planned path associated with a second vehicle (e.g., a second autonomous vehicle), which is based on a current position of the second vehicle and a mission requirement assigned to the second vehicle, is received at the first vehicle. After the first planned path associated with the second vehicle is received, a second planned path is generated based on the first planned path associated with the second vehicle and at least one of the mission requirement assigned to the first vehicle or the first planned path of the first vehicle. The second planned path of the first vehicle is transmitted to the second vehicle.Type: GrantFiled: October 9, 2014Date of Patent: December 1, 2015Assignee: Proxy Technologies Inc.Inventors: John Solomon Klinger, Robert F. Davis
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Publication number: 20150025713Abstract: A non-transitory processor-readable medium storing code causes a processor at a first vehicle (e.g., a first autonomous vehicle) to generate a first planned path based on a current position of the first vehicle and a mission requirement assigned to the first vehicle. A first planned path associated with a second vehicle (e.g., a second autonomous vehicle), which is based on a current position of the second vehicle and a mission requirement assigned to the second vehicle, is received at the first vehicle. After the first planned path associated with the second vehicle is received, a second planned path is generated based on the first planned path associated with the second vehicle and at least one of the mission requirement assigned to the first vehicle or the first planned path of the first vehicle. The second planned path of the first vehicle is transmitted to the second vehicle.Type: ApplicationFiled: October 9, 2014Publication date: January 22, 2015Applicant: PROXY TECHNOLOGIES, INC.Inventors: John Solomon KLINGER, Robert F. DAVIS
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Patent number: 8874360Abstract: A non-transitory processor-readable medium storing code causes a processor at a first vehicle (e.g., a first autonomous vehicle) to generate a first planned path based on a current position of the first vehicle and a mission requirement assigned to the first vehicle. A first planned path associated with a second vehicle (e.g., a second autonomous vehicle), which is based on a current position of the second vehicle and a mission requirement assigned to the second vehicle, is received at the first vehicle. After the first planned path associated with the second vehicle is received, a second planned path is generated based on the first planned path associated with the second vehicle and at least one of the mission requirement assigned to the first vehicle or the first planned path of the first vehicle. The second planned path of the first vehicle is transmitted to the second vehicle.Type: GrantFiled: December 21, 2012Date of Patent: October 28, 2014Assignee: Proxy Technologies Inc.Inventors: John Solomon Klinger, Robert F. Davis
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Publication number: 20140083487Abstract: An improved backsheet used in the construction of solar panels is disclosed. A method of manufacturing the backsheet and solar panel comprising the backsheet, including coextrusion processes are also disclosed. Additionally, a photovoltaic solar panel module comprising the backsheet of the invention is disclosed. The backsheet of the instant invention may comprise an exterior layer having inner and outer surfaces, a middle layer, having inner and outer surfaces, and an interior layer having inner and outer surfaces. In one embodiment of the invention, the outer surface of the middle layer may be adjoined to the inner surface of the exterior layer, and the inner surface of the middle layer may be adjoined to the outer surface of the interior layer. The exterior layer, middle layer, and interior layer may be adjoined via a co-extrusion process, thereby eliminating the need for the use of adhesives for bonding the layers of the backsheet together.Type: ApplicationFiled: September 25, 2012Publication date: March 27, 2014Inventors: E. David Santoleri, Robert F. Davis
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Publication number: 20130288378Abstract: Sensors for sensing/measuring one or more analytes in a chemical environment. Each sensor is based on a semiconductor structure having an interfacial region containing a two-dimensional electron gas (2DEG). A catalyst reactive to the analyte(s) is in contact with the semiconductor structure. Particles stripped from the analyte(s) by the catalyst passivate the surface of the semiconductor structure at the interface between the catalyst and the structure, thereby causing the charge density in the 2DEG proximate the catalyst to change. When this basic structure is incorporated into an electronic device, such as a high-electron-mobility transistor (HEMT) or a Schottky diode, the change in charge density manifests into a change in an electrical response of the device. For example, in an HEMT, the change in charge density manifests as a change in current through the transistor, and, in a Schottky diode, the change in charge density manifests as a change in capacitance.Type: ApplicationFiled: October 20, 2011Publication date: October 31, 2013Applicant: CARNEGIE MELLON UNIVERSITYInventors: Jason Gu, Jacob H. Melby, Robert F. Davis
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Publication number: 20120167955Abstract: Solar panels of ethylene-vinyl acetate copolymer resin having at least one layer of substantially clear encapsulant and a second layer of laminar encapsulant having a substantially clear layer and a pigmented layer provide excellent long term performance.Type: ApplicationFiled: September 2, 2010Publication date: July 5, 2012Inventors: Robert F. Davis, E. David Santoleri
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Publication number: 20110272004Abstract: Laminates of ethylene-vinyl acetate copolymer resin with opacifying pigment provide excellent performance as backing sheets for photovoltaic cells.Type: ApplicationFiled: May 6, 2010Publication date: November 10, 2011Inventors: Robert F. Davis, E. David Santoleri
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Publication number: 20110120522Abstract: Laminates of having a first outer layer of weatherable film, at least one mid layer, and a second outer layer containing an opacifying quantity of white pigment. The laminates are particularly useful for protecting photovoltaic cells, solar panels, and circuit boards. In photovoltaic cells, the laminates result in increased power generation.Type: ApplicationFiled: January 31, 2011Publication date: May 26, 2011Inventors: Carl P. Kernander, Robert F. Davis, Frank A. Mannarino, Marina Temchenko
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Publication number: 20110114148Abstract: A laminate for electronic devices contains a first outer layer of a layer comprising an organic solvent soluble and/or water dispersible, crosslinkable amorphous fluoropolymers, at least one mid-layer selected from at least one of the group consisting of (i) poly(chlorotrifluoro ethylene); (ii) polymeric film coated on one or both surfaces with liquid crystal polymer; (iii) liquid crystal polymers; (iv) metal foil; and (v) polyester, and a second outer layer wherein the second outer layer comprises pigmented EVA and wherein the second outer layer is substantially opaque to ultraviolet light. The laminate is particularly useful for use as a backing sheet for photovoltaic modules.Type: ApplicationFiled: November 4, 2010Publication date: May 19, 2011Inventors: Marina Temchenko, David William Avison, Frank Anthony Mannarino, Samuel Lim, Carl P. Kernander, Robert F. Davis
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Patent number: 7901779Abstract: Laminates of having a first outer layer of weatherable film, at least one mid layer, and a second outer layer containing an opacifying quantity of white pigment. The laminates are particularly useful for protecting photovoltaic cells, solar panels, and circuit boards. In photovoltaic cells, the laminates result in increased power generation.Type: GrantFiled: July 16, 2009Date of Patent: March 8, 2011Assignee: Madico, Inc.Inventors: Carl P. Kernander, Robert F Davis, Frank A. Mannarino, Marina Temchenko
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Patent number: 7829376Abstract: A p-type ZnO-based II-VI compound semiconductor layer has silver, potassium and/or gold dopants therein at a net p-type dopant concentration of greater than about 1×1017 cm?3. A method of forming the layer includes using an atomic layer deposition (ALD) technique. This technique includes exposing a substrate to a combination of gases: a first reaction gas containing zinc at a concentration that is repeatedly transitioned between at least two concentration levels during a processing time interval, a second reaction gas containing oxygen and a p-type dopant gas containing at least one p-type dopant species selected from a group consisting of silver, potassium and gold. A concentration of oxygen in the second reaction gas may also be repeatedly transitioned between at least two concentration levels.Type: GrantFiled: April 7, 2010Date of Patent: November 9, 2010Assignee: LumenZ, Inc.Inventors: Bunmi T. Adekore, Jonathan M. Pierce, Robert F. Davis
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Patent number: 7723154Abstract: A p-type ZnO-based II-VI compound semiconductor layer has silver, potassium and/or gold dopants therein at a net p-type dopant concentration of greater than about 1×1017 cm?3. A method of forming the layer includes using an atomic layer deposition (ALD) technique. This technique includes exposing a substrate to a combination of gases: a first reaction gas containing zinc at a concentration that is repeatedly transitioned between at least two concentration levels during a processing time interval, a second reaction gas containing oxygen and a p-type dopant gas containing at least one p-type dopant species selected from a group consisting of silver, potassium and gold. A concentration of oxygen in the second reaction gas may also be repeatedly transitioned between at least two concentration levels.Type: GrantFiled: October 19, 2006Date of Patent: May 25, 2010Assignees: North Carolina State University, LumenZ, LLCInventors: Bunmi T. Adekore, Jonathan M. Pierce, Robert F. Davis, George B. Kenney
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Patent number: 7682709Abstract: A method of preparing an n-type epitaxial layer of aluminum nitride conductively doped with germanium comprises directing a molecular beam of aluminum atoms onto the growth surface of a substrate that provides an acceptable lattice match for aluminum nitride; directing a molecular beam of activated nitrogen to the growth surface of the substrate; and directing a molecular beam of germanium to the growth surface of the substrate; while maintaining the growth surface of the substrate at a temperature high enough to provide the surface mobility and sticking coefficient required for epitaxial growth, but lower than the temperature at which the surface would decompose or the epitaxial layer disassociate back into atomic or molecular species.Type: GrantFiled: October 30, 1995Date of Patent: March 23, 2010Assignee: North Carolina State UniversityInventors: Robert F. Davis, Cheng Wang
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Publication number: 20100006137Abstract: Laminates of having a first outer layer of weatherable film, at least one mid layer, and a second outer layer containing an opacifying quantity of white pigment. The laminates are particularly useful for protecting photovoltaic cells, solar panels, and circuit boards. In photovoltaic cells, the laminates result in increased power generation.Type: ApplicationFiled: July 16, 2009Publication date: January 14, 2010Inventors: Carl P. Kernander, Robert F. Davis, Frank A. Mannarino, Marina Temchenko
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Patent number: 7579083Abstract: Laminates of having a first outer layer of weatherable film, at least one mid layer, and a second outer layer containing an opacifying quantity of white pigment. The laminates are particularly useful for protecting photovoltaic cells, solar panels, and circuit boards. In photovoltaic cells, the laminates result in increased power generation.Type: GrantFiled: December 28, 2007Date of Patent: August 25, 2009Assignee: Madico, Inc.Inventors: Carl P. Kernander, Robert F Davis, Frank A. Mannarino, Marina Temchenko
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Publication number: 20080124556Abstract: Laminates of having a first outer layer of weatherable film, at least one mid layer, and a second outer layer containing an opacifying quantity of white pigment. The laminates are particularly useful for protecting photovoltaic cells, solar panels, and circuit boards. In photovoltaic cells, the laminates result in increased power generation.Type: ApplicationFiled: December 28, 2007Publication date: May 29, 2008Inventors: Carl P. Kernander, Robert F. Davis, Frank A. Mannarino, Marina Temchenko
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Patent number: 7378684Abstract: An underlying gallium nitride layer on a silicon carbide substrate is masked with a mask that includes an array of openings therein, and the underlying gallium nitride layer is etched through the array of openings to define posts in the underlying gallium nitride layer and trenches therebetween. The posts each include a sidewall and a top having the mask thereon. The sidewalls of the posts are laterally grown into the trenches to thereby form a gallium nitride semiconductor layer. During this lateral growth, the mask prevents nucleation and vertical growth from the tops of the posts. Accordingly, growth proceeds laterally into the trenches, suspended from the sidewalls of the posts. The sidewalls of the posts may be laterally grown into the trenches until the laterally grown sidewalls coalesce in the trenches to thereby form a gallium nitride semiconductor layer.Type: GrantFiled: July 12, 2002Date of Patent: May 27, 2008Assignee: North Carolina State UniversityInventors: Kevin J. Linthicum, Thomas Gehrke, Darren B. Thomson, Eric P. Carlson, Pradeep Rajagopal, Robert F. Davis