Abstract: Glass substrates comprising an A-side upon which silicon thin film transistor devices can be fabricated and a B-side having a substantially homogeneous organic film thereon are described. The organic film includes a moiety that reduces voltage generation by contact electrification or triboelectrification. Methods of manufacturing the glass substrates and example devices incorporating the glass substrates are also described.

Abstract: A method of controllably bonding a thin sheet having a thin sheet bonding surface with a carrier having a carrier bonding surface, by depositing a carbonaceous surface modification layer onto at least one of the thin sheet bonding surface and the carrier bonding surface, incorporating polar groups with the surface modification layer, and then bonding the thin sheet bonding surface to the carrier bonding surface via the surface modification layer. The surface modification layer may include a bulk carbonaceous layer having a first polar group concentration and a surface layer having a second polar group concentration, wherein the second polar group concentration is higher than the first polar group concentration. The surface modification layer deposition and the treatment thereof may be performed by plasma polymerization techniques.

Abstract: Surface modification layers and associated heat treatments, that may be provided on a sheet, a carrier, or both, to control both room-temperature van der Waals (and/or hydrogen) bonding and high temperature covalent bonding between the thin sheet and carrier. The room-temperature bonding is controlled so as to be sufficient to hold the thin sheet and carrier together during vacuum processing, wet processing, and/or ultrasonic cleaning processing, for example. And at the same time, the high temperature covalent bonding is controlled so as to prevent a permanent bond between the thin sheet and carrier during high temperature processing, as well as maintain a sufficient bond to prevent delamination during high temperature processing.

Abstract: A method of controllably bonding a thin sheet having a thin sheet bonding surface with a carrier having a carrier bonding surface, by depositing a carbonaceous surface modification layer onto at least one of the thin sheet bonding surface and the carrier bonding surface, incorporating polar groups with the surface modification layer, and then bonding the thin sheet bonding surface to the carrier bonding surface via the surface modification layer. The surface modification layer may include a bulk carbonaceous layer having a first polar group concentration and a surface layer having a second polar group concentration, wherein the second polar group concentration is higher than the first polar group concentration. The surface modification layer deposition and the treatment thereof may be performed by plasma polymerization techniques.

Abstract: An organic thin film transistor comprising a first gate, a second gate, a semiconducting layer located between the first gate and second gate and configured to operate as a channel and a source electrode and a drain electrode connected to opposing sides of the semiconductor layer. The organic thin film transistor also comprises a first dielectric layer located between the first gate and the semiconducting layer in a direction of current flow through the semiconductor layer, the first dielectric layer comprising a polar elastomeric dielectric material that exhibits a double layer charging effect when a set voltage is applied to the first gate and a second dielectric layer located between the second gate and the semiconducting layer.

Abstract: A method of forming a hermetic barrier layer comprises sputtering a thin film from a sputtering target, wherein the sputtering target includes a sputtering material such as a low Tg glass, a precursor of a low Tg glass, or an oxide of copper or tin. During the sputtering, the formation of defects in the barrier layer are constrained to within a narrow range and the sputtering material is maintained at a temperature of less than 200° C.

Abstract: Methods for making electronic devices on thin sheets bonded to carriers. A surface modification layer and associated heat treatments, may be provided on a sheet, a carrier, or both, to control both room-temperature van der Waals (and/or hydrogen) bonding and high temperature covalent bonding between the thin sheet and carrier during the electronic device processing. The room-temperature bonding is controlled so as to be sufficient to hold the thin sheet and carrier together during vacuum processing, wet processing, and/or ultrasonic cleaning processing, during the electronic device processing. And at the same time, the high temperature covalent bonding is controlled so as to prevent a permanent bond between the thin sheet and carrier during high temperature processing, during the electronic device processing, as well as maintain a sufficient bond to prevent delamination during high temperature processing.

Abstract: A catalyst-free CVD method for forming graphene. The method involves placing a substrate within a reaction chamber, heating the substrate to a temperature between 600° C. and 1100° C., and introducing a carbon precursor into the chamber to form a graphene layer on a surface of the substrate. The method does not use plasma or a metal catalyst to form the graphene.

Abstract: A method of forming an article from a glass sheet (20) having a glass-sheet bonding surface (24) and a glass carrier (10) having a carrier bonding surface (14). At least one of the glass sheet and carrier bonding surfaces is coated with a surface modification layer (30), and then the glass sheet is connected with the carrier via the surface modification layer. From the perimeter of the glass sheet and the carrier while connected, there is removed a portion of the surface modification layer so as to expose a portion (19, 29) of the bonding surface on each of the glass sheet and the carrier. The glass sheet and carrier are then heated at a temperature ?400° C. so as to bond the perimeter of the glass sheet (26) with the perimeter of the carrier (16).

Abstract: One or more aspects of the disclosure pertain to an article including a film disposed on a glass substrate, which may be strengthened, where the interface between the film and the glass substrate is modified, such that the article has an improved average flexural strength, and the film retains key functional properties for its application. Some key functional properties of the film include optical, electrical and/or mechanical properties. In one or more embodiments, the interface exhibits an effective adhesion energy of about less than about 4 J/m2. In some embodiments, the interface is modified by the inclusion of a crack mitigating layer containing an inorganic material between the glass substrate and the film.

Abstract: One or more aspects of the disclosure pertain to an article including a film disposed on a glass substrate, which may be strengthened, where the interface between the film and the glass substrate is modified, such that the article has an improved average flexural strength, and the film retains key functional properties for its application. Some key functional properties of the film include optical, electrical and/or mechanical properties. In one or more embodiments, the interface exhibits an effective adhesion energy of about less than about 4 J/m2. In some embodiments, the interface is modified by the inclusion of a crack mitigating layer containing an inorganic material between the glass substrate and the film.

Abstract: Glass substrates comprising an A-side upon which silicon thin film transistor devices can be fabricated and a B-side having a substantially homogeneous organic film thereon are described. The organic film includes a moiety that reduces voltage generation by contact electrification or triboelectrification. Methods of manufacturing the glass substrates and example devices incorporating the glass substrates are also described.

Abstract: A method of forming a hermetic barrier layer comprises sputtering a thin film from a sputtering target, wherein the sputtering target includes a sputtering material such as a low Tg glass, a precursor of a low Tg glass, or an oxide of copper or tin. During the sputtering, the formation of defects in the barrier layer are constrained to within a narrow range and the sputtering material is maintained at a temperature of less than 200° C.

Abstract: There is disclosed a method for chemically treating a display glass substrate by treating at least one surface of the glass substrate with a heated solution containing HCl to form a depletion layer at the surface and under the surface of the glass substrate. The disclosure also relates to display glass substrates containing the depletion layer made by the disclosed process. In addition, the disclosure relates to methods of making thin-film transistors (“TFTs”) on these display glass substrates by depositing a Si layer directly on the chemically treated surface of the glass substrate, and annealing the Si layer to form polycrystalline silicon.

Abstract: An organic thin film transistor comprising a first gate, a second gate, a semiconducting layer located between the first gate and second gate and configured to operate as a channel and a source electrode and a drain electrode connected to opposing sides of the semiconductor layer. The organic thin film transistor also comprises a first dielectric layer located between the first gate and the semiconducting layer in a direction of current flow through the semiconductor layer, the first dielectric layer comprising a polar elastomeric dielectric material that exhibits a double layer charging effect when a set voltage is applied to the first gate and a second dielectric layer located between the second gate and the semiconducting layer.

Abstract: A method of making a device substrate article having a device modified substrate supported on a glass carrier substrate, including: treating at least a portion of the first surface of a device substrate, at least a portion of a first surface of a glass carrier, or a combination thereof, wherein the treating produces a surface having: silicon; oxygen; carbon; and fluorine amounts; and a metal to fluorine ratio as defined herein; contacting the treated surface with an untreated or like-treated counterpart device substrate or glass carrier substrate to form a laminate comprised of the device substrate bonded to the glass carrier substrate; modifying at least a portion of the non-bonded second surface of the device substrate of the laminate with at least one device surface modification treatment; and separating the device substrate having the device modified second surface from the glass carrier substrate.

Abstract: One or more aspects of the disclosure pertain to an article including a film disposed on a glass substrate, which may be strengthened, where the interface between the film and the glass substrate is modified, such that the article has an improved average flexural strength, and the film retains key functional properties for its application. Some key functional properties of the film include optical, electrical and/or mechanical properties. In one or more embodiments, interface exhibits the effective adhesion energy is about less than about 4 J/m2. In some embodiments, the interface is modified by the inclusion of a crack mitigating layer between the glass substrate and the film.

Abstract: A catalyst-free CVD method for forming graphene. The method involves placing a substrate within a reaction chamber, heating the substrate to a temperature between 600° C. and 1100° C., and introducing a carbon precursor into the chamber to form a graphene layer on a surface of the substrate. The method does not use plasma or a metal catalyst to form the graphene.

Abstract: A method of controllably bonding a thin sheet having a thin sheet bonding surface with a carrier having a carrier bonding surface, by depositing a carbonaceous surface modification layer onto at least one of the thin sheet bonding surface and the carrier bonding surface, incorporating polar groups with the surface modification layer, and then bonding the thin sheet bonding surface to the carrier bonding surface via the surface modification layer. The surface modification layer may include a bulk carbonaceous layer having a first polar group concentration and a surface layer having a second polar group concentration, wherein the second polar group concentration is higher than the first polar group concentration. The surface modification layer deposition and the treatment thereof may be performed by plasma polymerization techniques.

Abstract: A catalyst-free CVD method for forming graphene. The method involves placing a substrate within a reaction chamber, heating the substrate to a temperature between 600° C. and 1100° C., and introducing a carbon precursor into the chamber to form a graphene layer on a surface of the substrate. The method does not use plasma or a metal catalyst to form the graphene.