Abstract: A method for making a dense organosilicon film with improved mechanical properties, the method comprising the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber a gaseous composition comprising a novel mono- or dialkoxysilane; and applying energy to the gaseous composition comprising the novel mono- or dialkoxysilane in the reaction chamber to induce reaction of the gaseous composition comprising the novel mono- or dialkoxysilane to deposit an organosilicon film on the substrate, wherein the organosilicon film has a dielectric constant of from about 2.8 to about 3.3, an elastic modulus of from about 7 to about 30 GPa, and an at. % carbon of from about 10 to about 30 as measured by XPS.

Abstract: A selective thermal atomic layer deposition (ALD) process is disclosed. The process may comprise loading a substrate comprising a dielectric material, and a metal, into a reactor. The substrate may be reacted with a non-plasma based oxidant, thereby forming an oxidized metal surface on the metal. The substrate may be heated and exposed to a passivation agent that adsorbs more onto the oxidized metal than the dielectric material. Such exposure may form a passivation layer on the oxidized metal surface, and the substrate may be exposed to a silicon precursor that adsorbs more onto the dielectric material than the passivation layer, forming a chemi-adsorbed silicon-containing layer on the dielectric material. The substrate may be exposed to the non-plasma based oxidant, that simultaneously partially oxidizes the passivation layer, and oxidizes the chemi-adsorbed silicon-containing layer to form a silicon-containing dielectric film on the dielectric material.

Abstract: A method and composition for producing a porous low k dielectric film via chemical vapor deposition is provided. In one aspect, the method comprises the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber gaseous reagents including at least one structure-forming precursor comprising a alkoxysilacyclic or acyloxysilacyclic compound with or without a porogen; applying energy to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents to deposit a preliminary film on the substrate, wherein the preliminary film contains the porogen, and the preliminary film is deposited; and removing from the preliminary film at least a portion of the porogen contained therein and provide the film with pores and a dielectric constant of 3.2 or less. In certain embodiments, the structure-forming precursor further comprises a hardening additive.

Abstract: A selective plasma enhanced atomic layer deposition (ALD) process is disclosed. The process may comprise loading a substrate comprising a dielectric material, and a metal, into a reactor. The substrate may be reacted with a non-plasma based oxidant, thereby forming an oxidized metal surface on the metal. The substrate may be heated and exposed to a passivation agent that adsorbs more onto the oxidized metal than the dielectric material. Such exposure may form a passivation layer on the oxidized metal surface, and the substrate may be exposed to a silicon precursor that adsorbs more onto the dielectric material that the passivation layer, forming a chemi-adsorbed silicon-containing layer on the dielectric material. The substrate may be exposed to a plasma based oxidant, that simultaneously partially oxidizes the passivation layer, and oxidizes the chemi-adsorbed silicon-containing layer to form a dielectric film on the dielectric material.

Abstract: A method for making a dense organosilicon film with improved mechanical properties includes the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber a gaseous composition comprising alkoxydisiloxane; and applying energy to the gaseous composition comprising alkoxydisiloxane in the reaction chamber to induce reaction of the gaseous composition comprising alkoxydisiloxane to deposit an organosilicon film on the substrate, wherein the organosilicon film has a dielectric constant of from ˜2.50 to ˜3.30, an elastic modulus of from ˜6 to ˜35 GPa, and an at. % carbon of from ˜10 to ˜40 as measured by XPS.

Abstract: A composition useful in depositing low dielectric constant (low-k) insulating materials into high aspect ratio gaps, trenches, vias, and other surface features, of semiconductor devices by a plasma-enhanced chemical vapor deposition (PECVD) process is disclosed. The composition may comprise an alkoxy-functionalized cyclosiloxane derived from trimethylcyclotrisiloxane, tetramethylcyclotetrasiloxane, or pentamethylcyclopentasiloxane. The alkoxy-functionalization may comprise between 1 and 10 carbon atoms. A method of depositing the alkoxy-functionalized cyclosiloxane composition by a PECVD process is also disclosed. Finally, a film comprising a flowable liquid, or oligomer, comprising the oligomerized, or polymerized, alkoxy-functionalized cyclosiloxane composition, on a substrate is disclosed.

Abstract: A composition, and chemical vapor deposition method, is provided for producing a dielectric film. A gaseous reagent including the composition is introduced into the reaction chamber in which a substrate is provided. The gaseous reagent includes a silicon precursor that includes a silicon compound according to Formula I as defined herein. Energy is applied to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents and to thereby deposit a film on the substrate. The film as deposited is suitable for its intended use without an optional additional cure step applied to the as-deposited film. A method for making the composition is also disclosed.

Abstract: A method for making a dense organosilicon film with improved mechanical properties, the method comprising the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber a gaseous composition comprising hydrido-dimethyl-alkoxysilane; and applying energy to the gaseous composition comprising hydrido-dimethyl-alkoxysilane in the reaction chamber to induce reaction of the gaseous composition comprising hydrido-dimethyl-alkoxysilane to deposit an organosilicon film on the substrate, wherein the organosilicon film has a dielectric constant from ˜2.70 to ˜3.50, an elastic modulus of from ˜6 to ˜36 GPa, and an at. % carbon from ˜10 to ˜36 as measured by XPS.

Abstract: A method for making a dense organosilicon film with improved mechanical properties, the method comprising the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber a gaseous composition comprising hydrido-dialkyl-alkoxysilane; and applying energy to the gaseous composition comprising hydrido-dialkyl-alkoxysilane in the reaction chamber to induce reaction of the gaseous composition comprising hydrido-dialkyl-alkoxysilane to deposit an organosilicon film on the substrate, wherein the organosilicon film has a dielectric constant from ˜2.70 to ˜3.50, an elastic modulus of from ˜6 to ˜36 GPa, and an at. % carbon from ˜10 to ˜36 as measured by XPS.

Abstract: A method for making a dense organosilicon film with improved mechanical properties, the method comprising the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber a gaseous composition comprising a novel monoalkoxysilane; and applying energy to the gaseous composition comprising a novel monoalkoxysilane in the reaction chamber to induce reaction of the gaseous composition comprising a novel monoalkoxysilane to deposit an organosilicon film on the substrate, wherein the organosilicon film has a dielectric constant of from about 2.80 to about 3.30, an elastic modulus of from about 9 to about 32 GPa, and an at. % carbon of from about 10 to about 30 as measured by XPS.

Abstract: A chemical vapor deposition method for producing a dielectric film, the method comprising: providing a substrate into a reaction chamber; introducing gaseous reagents into the reaction chamber wherein the gaseous reagents comprise a silicon precursor comprising a silicon compound having the formula RnH4-nSi as defined herein and applying energy to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents to deposit a film on the substrate. The film as deposited is suitable for its intended use without an optional additional cure step applied to the as-deposited film.

Abstract: A method for depositing a silicon-containing film, the method comprising: placing a substrate comprising at least one surface feature into a flowable CVD reactor which is at a temperature of from about ?20° C. to about 100° C.; increasing pressure in the reactor to at least 10 torr; and introducing into the reactor at least one silicon-containing compound having at least one acetoxy group to at least partially react the at least one silicon-containing compound to form a flowable liquid oligomer wherein the flowable liquid oligomer forms a silicon oxide coating on the substrate and at least partially fills at least a portion of the at least one surface feature. Once cured, the silicon oxide coating has a low k and excellent mechanical properties.

Abstract: A method for depositing a silicon-containing film, the method comprising: placing a substrate comprising at least one surface feature into a flowable CVD reactor which is at a temperature of from about ?20° C. to about 400° C.; introducing into the reactor at least one silicon-containing compound having at least one acetoxy group to at least partially react the at least one silicon-containing compound to form a flowable liquid oligomer wherein the flowable liquid oligomer forms a silicon oxide coating on the substrate and at least partially fills at least a portion of the at least one surface feature. Once cured, the silicon oxide coating has a low k and excellent mechanical properties.

Abstract: A method and composition for producing a porous low k dielectric film via chemical vapor deposition includes the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber gaseous reagents including at least one structure-forming precursor comprising an silacyclic compound, and with or without a porogen; applying energy to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents to deposit a preliminary film on the substrate, wherein the preliminary film contains the porogen, and the preliminary film is deposited; and removing from the preliminary film at least a portion of the porogen contained therein and provide the film with pores and a dielectric constant of 3.0 or less. In certain embodiments, the structure-forming precursor further comprises a hardening additive.

Abstract: According to a chemical vapor deposition method for depositing an organosilicate film on a substrate, a gaseous organosilicate composition is introduced into a vacuum chamber. The gaseous organosilicate composition includes a first silicon-containing precursor selected from an organosilane and an organosiloxane, and further includes at least one second silicon-containing precursor selected from compounds represented by the structure of Formula I: R1nSi(OR2)4-n ??(I), in which R1 is a linear, branched, or cyclic C2-C6 alkyl group; n=1-3; and R2 is a linear, branched, or cyclic C1-C6 alkyl group. A first energy source is applied to the gaseous organosilicate composition in the vacuum chamber to induce reaction of the first silicon-containing precursor and the at least one second silicon-containing precursor and thereby deposit the organosilicate film on at least a portion of the substrate.

Abstract: A method and composition for producing a low k dielectric film via plasma enhanced chemical vapor deposition comprise the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber gaseous reagents including at least one structure-forming precursors comprising a silacycloalkane compound, an oxygen source, and optionally a porogen; applying energy to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents to deposit a low k dielectric film having dielectric constant of 3.2 or less. In certain embodiments, the structure-forming precursor further comprises a hardening additive.

Abstract: A method for depositing a silicon-containing film, the method comprising: placing a substrate comprising at least one surface feature into a flowable CVD reactor which is at a temperature of from about ?20° C. to about 100° C.; increasing pressure in the reactor to at least 10 torr; and introducing into the reactor at least one silicon-containing compound having at least one acetoxy group to at least partially react the at least one silicon-containing compound to form a flowable liquid oligomer wherein the flowable liquid oligomer forms a silicon oxide coating on the substrate and at least partially fills at least a portion of the at least one surface feature. Once cured, the silicon oxide coating has a low k and excellent mechanical properties.

Abstract: A method for depositing a silicon-containing film, the method comprising: placing a substrate comprising at least one surface feature into a flowable CVD reactor which is at a temperature of from about ?20° C. to about 100° C.; increasing pressure in the reactor to at least 10 torr; and introducing into the reactor at least one silicon-containing compound having at least one acetoxy group to at least partially react the at least one silicon-containing compound to form a flowable liquid oligomer wherein the flowable liquid oligomer forms a silicon oxide coating on the substrate and at least partially fills at least a portion of the at least one surface feature. Once cured, the silicon oxide coating has a low k and excellent mechanical properties.

Abstract: A method and composition for producing a porous low k dielectric film via chemical vapor deposition is provided. In one aspect, the method comprises the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber gaseous reagents including at least one structure-forming precursor comprising a alkoxysilacyclic or acyloxysilacyclic compound with or without a porogen; applying energy to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents to deposit a preliminary film on the substrate, wherein the preliminary film contains the porogen, and the preliminary film is deposited; and removing from the preliminary film at least a portion of the porogen contained therein and provide the film with pores and a dielectric constant of 3.2 or less. In certain embodiments, the structure-forming precursor further comprises a hardening additive.

Abstract: A method for making a dense organosilicon film with improved mechanical properties, the method comprising the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber a gaseous composition comprising 1-methyl-1-iso-propoxy-silacyclopentane or 1-methyl-1-iso-propoxy-silacyclobutane; and applying energy to the gaseous composition comprising 1-methyl-1-iso-propoxy-silacyclopentane or 1-methyl-1-iso-propoxy-silacyclobutane in the reaction chamber to induce reaction of the gaseous composition comprising 1-methyl-1-iso-propoxy-silacyclopentane or 1-methyl-1-iso-propoxy-silacyclobutane to deposit an organosilicon film on the substrate, wherein the organosilicon film has a dielectric constant of from 2.70 to 3.20, an elastic modulus of from 11 to 25 GPa, and an at. % carbon of from 12 to 31 as measured by XPS.