Patents by Inventor Robert Gordon Ridgeway
Robert Gordon Ridgeway has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20200075323Abstract: A method and composition for producing a low k dielectric film via plasma enhanced chemical vapor deposition comprise the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber gaseous reagents including at least one structure-forming precursors comprising a silacycloalkane compound, an oxygen source, and optionally a porogen; applying energy to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents to deposit a low k dielectric film having dielectric constant of 3.2 or less. In certain embodiments, the structure-forming precursor further comprises a hardening additive.Type: ApplicationFiled: August 23, 2019Publication date: March 5, 2020Applicant: Versum Materials US, LLCInventors: Manchao Xiao, Robert Gordon Ridgeway, Daniel P. Spence, Xinjian Lei, Raymond Nicholas Vrtis
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Publication number: 20200058496Abstract: A method for depositing a silicon-containing film, the method comprising: placing a substrate comprising at least one surface feature into a flowable CVD reactor which is at a temperature of from about ?20° C. to about 400° C.; introducing into the reactor at least one silicon-containing compound having at least one acetoxy group to at least partially react the at least one silicon-containing compound to form a flowable liquid oligomer wherein the flowable liquid oligomer forms a silicon oxide coating on the substrate and at least partially fills at least a portion of the at least one surface feature. Once cured, the silicon oxide coating has a low k and excellent mechanical properties.Type: ApplicationFiled: September 24, 2019Publication date: February 20, 2020Applicant: Versum Materials US, LLCInventors: Jianheng Li, Raymond Nicholas Vrtis, Robert Gordon Ridgeway, Manchao Xiao, Xinjian Lei
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Publication number: 20200048286Abstract: A composition, and chemical vapor deposition method, is provided for producing a dielectric film. A gaseous reagent including the composition is introduced into the reaction chamber in which a substrate is provided. The gaseous reagent includes a silicon precursor that includes a silicon compound according to Formula I as defined herein. Energy is applied to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents and to thereby deposit a film on the substrate. The film as deposited is suitable for its intended use without an optional additional cure step applied to the as-deposited film. A method for making the composition is also disclosed.Type: ApplicationFiled: October 18, 2019Publication date: February 13, 2020Inventors: Manchao Xiao, Raymond Nicholas Vrtis, Robert Gordon Ridgeway, William Robert Entley, Jennifer Lynn Anne Achtyl, Xinjian Lei, Daniel P. Spence
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Patent number: 10468244Abstract: A method for depositing a silicon-containing film, the method comprising: placing a substrate comprising at least one surface feature into a flowable CVD reactor which is at a temperature of from about ?20° C. to about 400° C.; introducing into the reactor at least one silicon-containing compound having at least one acetoxy group to at least partially react the at least one silicon-containing compound to form a flowable liquid oligomer wherein the flowable liquid oligomer forms a silicon oxide coating on the substrate and at least partially fills at least a portion of the at least one surface feature. Once cured, the silicon oxide coating has a low k and excellent mechanical properties.Type: GrantFiled: August 18, 2017Date of Patent: November 5, 2019Assignee: VERSUM MATERIALS US, LLCInventors: Jianheng Li, Raymond Nicholas Vrtis, Robert Gordon Ridgeway, Manchao Xiao, Xinjian Lei
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Publication number: 20190292658Abstract: Described herein are compositions and methods using same for forming a silicon-containing film such as without limitation a silicon oxide, silicon nitride, silicon oxynitride, a carbon-doped silicon nitride, or a carbon-doped silicon oxide film on at least a surface of a substrate having a surface feature. In one aspect, the silicon-containing films are deposited using a compound having Formula I or II described herein.Type: ApplicationFiled: December 21, 2016Publication date: September 26, 2019Inventors: Jianheng Li, Xinjian Lei, Robert Gordon Ridgeway, Raymond Nicholas Vrtis, Manchao Xiao, Richard Ho
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Patent number: 10395920Abstract: A method and composition for producing a low k dielectric film via chemical vapor deposition is provided. In one aspect, the method comprises the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber gaseous reagents including at least one structure-forming precursor comprising a silacyclic compound, and a porogen; applying energy to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents to deposit a preliminary film on the substrate, wherein the preliminary film contains the porogen, and the preliminary film is deposited; and removing from the preliminary film at least a portion of the porogen contained therein and provide the film with pores and a dielectric constant of 2.7 or less.Type: GrantFiled: February 6, 2018Date of Patent: August 27, 2019Assignee: VERSUM MATERIALS US, LLCInventors: Raymond Nicholas Vrtis, Robert Gordon Ridgeway, Jianheng Li, William Robert Entley, Jennifer Lynn Anne Achtyl, Xinjian Lei
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Publication number: 20190244810Abstract: According to a chemical vapor deposition method for depositing an organosilicate film on a substrate, a gaseous organosilicate composition is introduced into a vacuum chamber. The gaseous organosilicate composition includes a first silicon-containing precursor selected from an organosilane and an organosiloxane, and further includes at least one second silicon-containing precursor selected from compounds represented by the structure of Formula I: R1nSi(OR2)4-n ??(I), in which R1 is a linear, branched, or cyclic C2-C6 alkyl group; n=1-3; and R2 is a linear, branched, or cyclic C1-C6 alkyl group. A first energy source is applied to the gaseous organosilicate composition in the vacuum chamber to induce reaction of the first silicon-containing precursor and the at least one second silicon-containing precursor and thereby deposit the organosilicate film on at least a portion of the substrate.Type: ApplicationFiled: February 6, 2019Publication date: August 8, 2019Applicant: Versum Materials US, LLCInventors: Raymond Nicholas Vrtis, Robert Gordon Ridgeway, Jennifer Lynn Anne Achtyl, William Robert Entley, Dino Sinatore, Kathleen Esther Theodorou
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Patent number: 10354860Abstract: Described herein is an apparatus comprising a plurality of silicon-containing layers wherein the silicon-containing layers are selected from a silicon oxide and a silicon nitride layer or film. Also described herein are methods for forming the apparatus to be used, for example, as 3D vertical NAND flash memory stacks. In one particular aspect or the apparatus, the silicon oxide layer comprises slightly compressive stress and good thermal stability. In this or other aspects of the apparatus, the silicon nitride layer comprises slightly tensile stress and less than 300 MPa stress change after up to about 800° C. thermal treatment. In this or other aspects of the apparatus, the silicon nitride layer etches much faster than the silicon oxide layer in hot H3PO4, showing good etch selectivity.Type: GrantFiled: September 30, 2015Date of Patent: July 16, 2019Assignee: VERSUM MATERIALS US, LLCInventors: Jianheng Li, Robert Gordon Ridgeway, Xinjian Lei, Raymond Nicholas Vrtis, Bing Han, Madhukar Bhaskara Rao
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Patent number: 10319862Abstract: Described herein are apparatus comprising one or more silicon-containing layers and a metal oxide layer. Also described herein are methods for forming one or more silicon-containing layers to be used, for example, as passivation layers in a display device. In one particular aspect, the apparatus comprises a transparent metal oxide layer, a silicon oxide layer and a silicon nitride layer. In this or other aspects, the apparatus is deposited at a temperature of 350° C. or below. The silicon-containing layers described herein comprise one or more of the following properties: a density of about 1.9 g/cm3 or greater; a hydrogen content of about 4×1022 cm?3 or less, and a transparency of about 90% or greater at 400-700 nm as measured by a UV-visible light spectrometer.Type: GrantFiled: March 8, 2013Date of Patent: June 11, 2019Assignee: VERSUM MATERIALS US, LLCInventors: Robert Gordon Ridgeway, Andrew David Johnson, Anupama Mallikarjunan, Raymond Nicholas Vrtis, Xinjian Lei, Mark Leonard O'Neill, Manchao Xiao, Jianheng Li, Michael T. Savo
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Publication number: 20190134663Abstract: A method and composition for producing a porous low k dielectric film via chemical vapor deposition includes the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber gaseous reagents including at least one structure-forming precursor comprising an silacyclic compound, and with or without a porogen; applying energy to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents to deposit a preliminary film on the substrate, wherein the preliminary film contains the porogen, and the preliminary film is deposited; and removing from the preliminary film at least a portion of the porogen contained therein and provide the film with pores and a dielectric constant of 3.0 or less. In certain embodiments, the structure-forming precursor further comprises a hardening additive.Type: ApplicationFiled: October 25, 2018Publication date: May 9, 2019Applicant: Versum Materials US, LLCInventors: Xinjian Lei, Robert Gordon Ridgeway, Raymond Nicholas Vrtis
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Patent number: 10249489Abstract: Low dielectric organosilicon films are deposited by a process comprising the steps of: providing a substrate within a vacuum chamber; introducing into the vacuum chamber a gaseous silicon containing precursor composition comprising at least one organosilicon precursor selected from the group consisting of Formula (I) and Formula (II): wherein, R1, R2, R3, R4, R5, and R6 are as defined herein, and applying energy to the gaseous structure forming composition in the vacuum chamber to induce reaction of the at least one organosilicon precursor to deposit a film on at least a portion of the substrate.Type: GrantFiled: October 20, 2017Date of Patent: April 2, 2019Assignee: VERSUM MATERIALS US, LLCInventors: Raymond Nicholas Vrtis, Robert Gordon Ridgeway, Jennifer Lynn Anne Achtyl, William Robert Entley, Dino Sinatore, Kathleen Esther Theodorou, Andrew J. Adamczyk
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Publication number: 20190055645Abstract: Described herein are compositions and methods using same for forming a silicon-containing film such as without limitation a silicon carbide, silicon nitride, silicon oxide, silicon oxynitride, a carbon-doped silicon nitride, a carbon-doped silicon oxide, or a carbon doped silicon oxynitride film on at least a surface of a substrate having a surface feature. In one aspect, the silicon-containing films are deposited using the co-deposition of a first compound comprising a carbon-carbon double or carbon-carbon triple bond and a second compound comprising at least one Si—H bond.Type: ApplicationFiled: February 22, 2017Publication date: February 21, 2019Inventors: Jianheng Li, Xinjian Lei, Raymond Nicholas Vrtis, Robert Gordon Ridgeway, Dino Sinatore, Manchao Xiao
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Publication number: 20190017167Abstract: Described herein are compositions and methods using same for forming a silicon-containing film such as without limitation a silicon oxide, silicon nitride, silicon oxynitride, a carbon-doped silicon nitride, or a carbon-doped silicon oxide film on at least a surface of a substrate having a surface feature. In one aspect, the composition comprises at least one compound is selected from the group consisting of a siloxane, an trisilylamine-based compound, an organoaminodisilane compound, and a cyclic trisilazane compound.Type: ApplicationFiled: September 18, 2018Publication date: January 17, 2019Applicant: Versum Materials US, LLCInventors: Raymond Nicholas Vrtis, William Robert Entley, Robert Gordon Ridgeway, Xinjian Lei, John Francis Lehmann, Manchao Xiao
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Publication number: 20180315598Abstract: A method for depositing a silicon-containing film, the method comprising: placing a substrate comprising at least one surface feature into a flowable CVD reactor which is at a temperature of from about ?20° C. to about 100° C.; increasing pressure in the reactor to at least 10 torr; and introducing into the reactor at least one silicon-containing compound having at least one acetoxy group to at least partially react the at least one silicon-containing compound to form a flowable liquid oligomer wherein the flowable liquid oligomer forms a silicon oxide coating on the substrate and at least partially fills at least a portion of the at least one surface feature. Once cured, the silicon oxide coating has a low k and excellent mechanical properties.Type: ApplicationFiled: June 11, 2018Publication date: November 1, 2018Applicant: Versum Materials US, LLCInventors: Jianheng Li, Raymond Nicholas Vrtis, Robert Gordon Ridgeway, Manchao Xiao, Xinjian Lei
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Patent number: 10106890Abstract: Compositions and methods using same for forming a silicon-containing film such as without limitation a silicon oxide, silicon nitride, silicon oxynitride, a carbon-doped silicon nitride, or a carbon-doped silicon oxide film on at least a surface of a substrate having a surface feature. In one aspect, the composition comprises at least one compound is selected from the group consisting of a siloxane, an trisilylamine-based compound, an organoaminodisilane compound, and a cyclic trisilazane compound.Type: GrantFiled: October 23, 2015Date of Patent: October 23, 2018Assignee: VERSUM MATERIALS US, LLCInventors: Jianheng Li, John Francis Lehmann, Xinjian Lei, Raymond Nicholas Vrtis, Robert Gordon Ridgeway, William Robert Entley
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Publication number: 20180277360Abstract: Described herein is a method and composition comprising same for sealing the pores of a porous low dielectric constant (“low k”) layer by providing an additional thin dielectric film, referred to herein as a pore sealing layer, on at least a surface of the porous, low k layer to prevent further loss of dielectric constant of the underlying layer. In one aspect, the method comprises: contacting a porous low dielectric constant film with at least one organosilicon compound to provide an absorbed organosilicon compound and treating the absorbed organosilicon compound with ultraviolet light, plasma, or both, and repeating until a desired thickness of the pore sealing layer is formed.Type: ApplicationFiled: April 17, 2018Publication date: September 27, 2018Applicant: Versum Materials US, LLCInventors: Jianheng Li, Raymond Nicholas Vrtis, Robert Gordon Ridgeway, Xinjian Lei, Mark Leonard O'Neill, Xuezhong Jiang
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Publication number: 20180233355Abstract: A method and composition for producing a low k dielectric film via chemical vapor deposition is provided. In one aspect, the method comprises the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber gaseous reagents including at least one structure-forming precursor comprising a silacyclic compound, and a porogen; applying energy to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents to deposit a preliminary film on the substrate, wherein the preliminary film contains the porogen, and the preliminary film is deposited; and removing from the preliminary film at least a portion of the porogen contained therein and provide the film with pores and a dielectric constant of 2.7 or less.Type: ApplicationFiled: February 6, 2018Publication date: August 16, 2018Applicant: Versum Materials US, LLCInventors: Raymond Nicholas Vrtis, Robert Gordon Ridgeway, Jianheng Li, William Robert Entley, Jennifer Lynn Anne Achtyl, Xinjian Lei
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Publication number: 20180122632Abstract: Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same.Type: ApplicationFiled: October 20, 2017Publication date: May 3, 2018Inventors: Raymond Nicholas Vrtis, Robert Gordon Ridgeway, Jennifer Lynn Anne Achtyl, William Robert Entley, Dino Sinatore, Kathleen Esther Theodorou, Andrew J. Adamczyk
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Patent number: 9922818Abstract: A method and composition for producing a porous low k dielectric film via chemical vapor deposition is provided. In one aspect, the method comprises the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber gaseous reagents including at least one structure-forming precursor comprising an alkyl-alkoxysilacyclic compound, and a porogen; applying energy to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents to deposit a preliminary film on the substrate, wherein the preliminary film contains the porogen, and the preliminary film is deposited; and removing from the preliminary film at least a portion of the porogen contained therein and provide the film with pores and a dielectric constant of 2.7 or less. In certain embodiments, the structure-forming precursor further comprises a hardening additive.Type: GrantFiled: June 5, 2015Date of Patent: March 20, 2018Assignee: VERSUM MATERIALS US, LLCInventors: Raymond Nicholas Vrtis, Robert Gordon Ridgeway, Jianheng Li, William Robert Entley, Jennifer Lynn Anne Achtyl, Xinjian Lei
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Publication number: 20180061636Abstract: A method for depositing a silicon-containing film, the method comprising: placing a substrate comprising at least one surface feature into a flowable CVD reactor which is at a temperature of from about ?20° C. to about 400° C.; introducing into the reactor at least one silicon-containing compound having at least one acetoxy group to at least partially react the at least one silicon-containing compound to form a flowable liquid oligomer wherein the flowable liquid oligomer forms a silicon oxide coating on the substrate and at least partially fills at least a portion of the at least one surface feature. Once cured, the silicon oxide coating has a low k and excellent mechanical properties.Type: ApplicationFiled: August 18, 2017Publication date: March 1, 2018Applicant: Versum Materials US, LLCInventors: Jianheng Li, Raymond Nicholas Vrtis, Robert Gordon Ridgeway, Manchao Xiao, Xinjian Lei