Patents by Inventor Robert H. Burgener

Robert H. Burgener has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11206017
    Abstract: A novel RF switch circuit and method for switching RF signals is described. The RF switch circuit is fabricated in a silicon-on-insulator (SOI) technology. The RF switch includes pairs of switching and shunting transistor groupings used to alternatively couple RF input signals to a common RF node. The switching and shunting transistor grouping pairs are controlled by a switching control voltage (SW) and its inverse (SW_). The switching and shunting transistor groupings comprise one or more MOSFET transistors connected together in a “stacked” or serial configuration. The stacking of transistor grouping devices, and associated gate resistors, increase the breakdown voltage across the series connected switch transistors and operate to improve RF switch compression. A fully integrated RF switch is described including digital control logic and a negative voltage generator integrated together with the RF switch elements.
    Type: Grant
    Filed: July 15, 2020
    Date of Patent: December 21, 2021
    Assignee: pSemi Corporation
    Inventors: Mark L. Burgener, James S. Cable, Robert H. Benton
  • Patent number: 10425991
    Abstract: Apparatus and methods for generating thermal energy from a pulsed DC electric power source utilizing pairs of electrodes disposed in a water medium. Electric pulses are provided at a frequency up to 20 MHz. Efficiencies are obtained when multiple pairs of electrodes are powered by the pulsed DC electric power source. The electrodes may be rods, plates, cylinders, or other useful shapes. The electrodes exposed to water may be a metal or alloy of nickel, platinum, palladium, or tungsten. The DC pulse generator is electrically connected to the electrodes to provide a source of pulsed direct current electric power. The input polarity to the electrodes may be periodically reversed or alternated between the anode and cathode polarity to limit erosion/electroplating of electrode material.
    Type: Grant
    Filed: August 14, 2017
    Date of Patent: September 24, 2019
    Assignee: KEN GEN ENERGY, LLC
    Inventors: Robert H. Burgener, II, Troy Atkin
  • Publication number: 20180044812
    Abstract: Apparatus and methods for generating thermal energy from a pulsed DC electric power source utilizing pairs of electrodes disposed in a water medium. Electric pulses are provided at a frequency up to 20 MHz. Efficiencies are obtained when multiple pairs of electrodes are powered by the pulsed DC electric power source. The electrodes may be rods, plates, cylinders, or other useful shapes. The electrodes exposed to water may be a metal or alloy of nickel, platinum, palladium, or tungsten. The DC pulse generator is electrically connected to the electrodes to provide a source of pulsed direct current electric power. The input polarity to the electrodes may be periodically reversed or alternated between the anode and cathode polarity to limit erosion/electroplating of electrode material.
    Type: Application
    Filed: August 14, 2017
    Publication date: February 15, 2018
    Inventors: Robert H. Burgener, II, Troy Atkin
  • Publication number: 20140252921
    Abstract: Methods, compositions, and apparatus for generating electricity are provided. Electricity is generated through the mechanisms nuclear magnetic spin and remnant polarization electric generation. The apparatus may include a material with high nuclear magnetic spin or high remnant polarization coupled with a poled ferroelectric material. The apparatus may also include a pair of electrical contacts disposed on opposite sides of the poled ferroelectric material and the high nuclear magnetic spin or high remnant polarization material. Further, a magnetic field may be applied to the high nuclear magnetic spin material.
    Type: Application
    Filed: May 23, 2014
    Publication date: September 11, 2014
    Inventors: Robert H. Burgener, II, Gary M. Renlund
  • Publication number: 20140252920
    Abstract: Methods, compositions, and apparatus for generating electricity are provided. Electricity is generated through the mechanisms nuclear magnetic spin and remnant polarization electric generation. The apparatus may include a material with high nuclear magnetic spin or high remnant polarization coupled with a poled ferroelectric material. The apparatus may also include a pair of electrical contacts disposed on opposite sides of the poled ferroelectric material and the high nuclear magnetic spin or high remnant polarization material. Further, a magnetic field may be applied to the high nuclear magnetic spin material.
    Type: Application
    Filed: May 23, 2014
    Publication date: September 11, 2014
    Inventors: Robert H. Burgener, II, Gary M. Renlund
  • Patent number: 8736151
    Abstract: Methods, compositions, and apparatus for generating electricity are provided. Electricity is generated through the mechanisms nuclear magnetic spin and remnant polarization electric generation. The apparatus may include a material with high nuclear magnetic spin or high remnant polarization coupled with a poled ferroelectric material. The apparatus may also include a pair of electrical contacts disposed on opposite sides of the poled ferroelectric material and the high nuclear magnetic spin or high remnant polarization material. Further, a magnetic field may be applied to the high nuclear magnetic spin material.
    Type: Grant
    Filed: September 24, 2007
    Date of Patent: May 27, 2014
    Assignee: Velos Industries, LLC
    Inventors: Robert H. Burgener, II, Gary M. Renlund
  • Publication number: 20130072924
    Abstract: A radio frequency ablation antenna is disclosed. The micro-strip ablation antenna has a dielectric member having a substantially tubular shape. A first conductor is disposed within the dielectric member, and a second conductor is disposed on an outer surface of the dielectric member. The first conductor is configured to be electrically connected to a radio frequency source or ground, and the second conductor is configured to be electrically connected to the other of the radio frequency source or the ground.
    Type: Application
    Filed: September 13, 2012
    Publication date: March 21, 2013
    Applicant: BSD MEDICAL CORPORATION
    Inventors: Robert H. Burgener, Todd H. Turnlund, Chet M. Crump, Kent Moore
  • Patent number: 7935616
    Abstract: Methods of fabricating semiconductor p-n junctions and semiconductor devices containing p-n junctions are disclosed in which the p-n junctions contain concentration profiles for the p-type and n-type dopants that are controllable and independent of a dopant diffusion profile. The p-n junction is disposed between a layer of semiconductor doped with a p-type dopant and a layer of semiconductor doped with an n-type dopant. The p-n junction is fabricated using a crystal growth process that allows dynamic control and variation of both p-type and n-type dopant concentrations during the crystal growth process.
    Type: Grant
    Filed: June 17, 2005
    Date of Patent: May 3, 2011
    Inventors: Robert H. Burgener, II, Roger L. Felix, Gary M. Renlund
  • Patent number: 7691353
    Abstract: Low dielectric constant group II-VI compounds, such as zinc oxide, and fabrication methods are disclosed. Low dielectric constant insulator materials are fabricated by doping zinc oxide with at least one mole % p-type dopant ion. Low dielectric constant zinc oxide insulator materials are fabricated by doping zinc oxide with silicon having a concentration of at least 1017 atoms/cm3. Low dielectric zinc oxide insulator materials are fabricated by doping zinc oxide with a dopant ion having a concentration of at least about 1018 atoms/cm3, followed by heating to a temperature which converts the zinc oxide to an insulator. The temperature varies depending upon the choice of dopant. For arsenic, the temperature is at least about 450° C.; for antimony, the temperature is at least about 650° C. The dielectric constant of zinc oxide semiconductor is lowered by doping zinc oxide with a dopant ion at a concentration at least about 1018 to about 1019 atoms/cm3.
    Type: Grant
    Filed: June 17, 2005
    Date of Patent: April 6, 2010
    Inventors: Robert H. Burgener, II, Roger L. Felix, Gary M. Renlund
  • Patent number: 7675133
    Abstract: A persistent p-type group II-VI semiconductor material is disclosed containing atoms of group II elements, atoms of group VI elements, and a p-type dopant which replaces atoms of the group VI element in the semiconductor material. The p-type dopant has a negative oxidation state. The p-type dopant causes formation of vacancies of atoms of the group II element in the semiconductor material. Fabrication methods and solid state devices containing the group II-VI semiconductor material are disclosed.
    Type: Grant
    Filed: June 17, 2005
    Date of Patent: March 9, 2010
    Inventors: Robert H. Burgener, II, Roger L. Felix, Gary M. Renlund
  • Patent number: 7473925
    Abstract: A persistent p-type group II-VI semiconductor material is disclosed. The group II-VI semiconductor includes atoms of group II elements, atoms of group VI elements, and one or more p-type dopants. The p-type dopant concentration is sufficient to render the group II-VI semiconductor material in a single crystal form. The semiconductor resistivity is less than about 0.5 ohm·cm, and the carrier mobility is greater than about 0.1 cm2/V·s. Group II elements include zinc, cadmium, the alkaline earth metals such as beryllium, magnesium calcium, strontium, and barium, and mixtures thereof. Group VI elements include oxygen, sulfur, selenium, tellurium, and mixtures thereof. P-type dopants include, but are not limited to, nitrogen, phosphorus, arsenic, antimony, chalcogenides of the foregoing, and mixtures thereof.
    Type: Grant
    Filed: January 5, 2007
    Date of Patent: January 6, 2009
    Assignee: On International, Inc.
    Inventors: Robert H. Burgener, II, Roger L. Felix, Gary M. Renlund
  • Publication number: 20080246366
    Abstract: Methods, compositions, and apparatus for generating electricity are provided. Electricity is generated through the mechanisms nuclear magnetic spin and remnant polarization electric generation. The apparatus may include a material with high nuclear magnetic spin or high remnant polarization coupled with a poled ferroelectric material. The apparatus may also include a pair of electrical contacts disposed on opposite sides of the poled ferroelectric material and the high nuclear magnetic spin or high remnant polarization material. Further, a magnetic field may be applied to the high nuclear magnetic spin material.
    Type: Application
    Filed: September 24, 2007
    Publication date: October 9, 2008
    Applicant: GREAT BASIN, LLC
    Inventors: Robert H. Burgener, Gary M. Renlund
  • Patent number: 7227196
    Abstract: Semiconductor devices containing group II-VI semiconductor materials are disclosed. The devices may include a p-n junction containing a p-type group II-VI semiconductor material and an n-type semiconductor material. The p-type group II-VI semiconductor includes a single crystal group II-VI semiconductor containing atoms of group II elements, atoms of group VI elements, and one or more p-type dopants. The p-type dopant concentration is greater than about 1016 atoms·cm?3, the semiconductor resistivity is less than about 0.5 ohm·cm, and the carrier mobility is greater than about 0.1 cm2/V·s. The semiconductor devices may include light emitting diodes, laser diodes, field effect transistors, and photodetectors.
    Type: Grant
    Filed: May 19, 2004
    Date of Patent: June 5, 2007
    Inventors: Robert H. Burgener, II, Roger L. Felix, Gary M. Renlund
  • Patent number: 7184203
    Abstract: Up-conversion and down-conversion photo-luminescence in rare earth compounds are disclosed. Broadband, super-radiant, and discrete line emissions are observed. The rare earth compounds include a rare earth element and at least one other element selected from chalcogens, halogens, nitrogen, and phosphorus. The rare earth compounds include, but are not limited to, rare earth oxides, fluorides, and oxyfluorides. Doping and co-doping of rare earth compounds in an optical host material is not required. The compounds are irradiated with incident light having an incident wavelength that is selected to be highly absorbed by the rare earth compound. The up-conversion and down-conversion luminescence have been observed which may be caused by unknown electron transitions, particularly in the case of ytterbia.
    Type: Grant
    Filed: February 13, 2004
    Date of Patent: February 27, 2007
    Inventors: Robert H. Burgener, II, Roger L. Felix, Gary M. Renlund
  • Patent number: 7172813
    Abstract: A zinc oxide crystal growth substrate is disclosed. The zinc oxide crystal growth substrate includes a thin layer of single crystal zinc oxide deposited on an self supporting substrate surface by a chemical deposition process. The chemical deposition process is selected from RF sputtering, CVD (chemical vapor deposition), MOCVD (metal organic chemical vapor deposition), spin coating, electrophoresis, and hydrothermal growth processes. The self supporting substrate may be amorphous, polycrystalline, or crystalline. The thin layer of zinc oxide has a crystal lattice which permits the crystal growth of a crystal compatible with zinc oxide. The compatible crystal has a lattice parameter within about 5% of a corresponding lattice parameter of the zinc oxide.
    Type: Grant
    Filed: May 19, 2004
    Date of Patent: February 6, 2007
    Inventors: Robert H. Burgener, II, Roger L. Felix, Gary M. Renlund
  • Patent number: 7161173
    Abstract: A persistent p-type group II-VI semiconductor material is disclosed. The group II-VI semiconductor includes atoms of group II elements, atoms of group VI elements, and one or more p-type dopants. The p-type dopant concentration is sufficient to render the group II-VI semiconductor material in a single crystal form. The semiconductor resistivity is less than about 0.5 ohm·cm, and the carrier mobility is greater than about 0.1 cm2/V·s. Group II elements include zinc, cadmium, the alkaline earth metals such as beryllium, magnesium calcium, strontium, and barium, and mixtures thereof. Group VI elements include oxygen, sulfur, selenium, tellurium, and mixtures thereof. P-type dopants include, but are not limited to, nitrogen, phosphorus, arsenic, antimony, bismuth, copper, chalcogenides of the foregoing, and mixtures thereof.
    Type: Grant
    Filed: May 19, 2004
    Date of Patent: January 9, 2007
    Inventors: Robert H. Burgener, II, Roger L. Felix, Gary M. Renlund
  • Patent number: 7141489
    Abstract: Commercially viable methods of manufacturing p-type group II–VI semiconductor materials are disclosed. A thin film of group II–VI semiconductor atoms is deposited on a self supporting substrate surface. The semiconductor material includes atoms of group II elements, group VI elements, and one or more p-type dopants. The semiconductor material may be deposited on the substrate surface under deposition conditions in which the group II atoms, group VI atoms, and p-type dopant atoms are in a gaseous phase prior to combining as the thin film. Alternatively, a liquid deposition process may be used to deposit the group II atoms, group VI atoms, and p-type dopant atoms in a predetermined orientation to result in the fabrication of the group II–VI semiconductor material. The resulting semiconductor thin film is a persistent p-type semiconductor, and the p-type dopant concentration is greater than about 1016 atoms·cm?3. The semiconductor resistivity is less than about 0.5 ohm·cm.
    Type: Grant
    Filed: May 19, 2004
    Date of Patent: November 28, 2006
    Inventors: Robert H. Burgener, II, Roger L. Felix, Gary M. Renlund
  • Publication number: 20040235214
    Abstract: Commercially viable methods of manufacturing p-type group II-VI semiconductor materials are disclosed. A thin film of group II-VI semiconductor atoms is deposited on a self supporting substrate surface. The semiconductor material includes atoms of group II elements, group VI elements, and one or more p-type dopants. The semiconductor material may be deposited on the substrate surface under deposition conditions in which the group II atoms, group VI atoms, and p-type dopant atoms are in a gaseous phase prior to combining as the thin film. Alternatively, a liquid deposition process may be used to deposit the group II atoms, group VI atoms, and p-type dopant atoms in a predetermined orientation to result in the fabrication of the group II-VI semiconductor material. The resulting semiconductor thin film is a persistent p-type semiconductor, and the p-type dopant concentration is greater than about 1016 atoms·cm−3. The semiconductor resistivity is less than about 0.5 ohm·cm.
    Type: Application
    Filed: May 19, 2004
    Publication date: November 25, 2004
    Inventors: Robert H. Burgener, Roger L. Felix, Gary M. Renlund
  • Publication number: 20040232412
    Abstract: Semiconductor devices containing group II-VI semiconductor materials are disclosed. The devices may include a p-n junction containing a p-type group II-VI semiconductor material and an n-type semiconductor material. The p-type group II-VI semiconductor includes a single crystal group II-VI semiconductor containing atoms of group II elements, atoms of group VI elements, and one or more p-type dopants. The p-type dopant concentration is greater than about 1016 atoms·cm−3, the semiconductor resistivity is less than about 0.5 ohm·cm, and the carrier mobility is greater than about 0.1 cm2/V·s. The semiconductor devices may include light emitting diodes, laser diodes, field effect transistors, and photodetectors.
    Type: Application
    Filed: May 19, 2004
    Publication date: November 25, 2004
    Inventors: Robert H. Burgener, Roger L. Felix, Gary M. Renlund
  • Publication number: 20040232427
    Abstract: A persistent p-type group II-VI semiconductor material is disclosed. The group II-VI semiconductor includes atoms of group II elements, atoms of group VI elements, and one or more p-type dopants. The p-type dopant concentration is sufficient to render the group II-VI semiconductor material in a single crystal form. The semiconductor resistivity is less than about 0.5 ohm·cm, and the carrier mobility is greater than about 0.1 cm2/V·s. Group II elements include zinc, cadmium, the alkaline earth metals such as beryllium, magnesium calcium, strontium, and barium, and mixtures thereof. Group VI elements include oxygen, sulfur, selenium, tellurium, and mixtures thereof. P-type dopants include, but are not limited to, nitrogen, phosphorus, arsenic, antimony, bismuth, copper, chalcogenides of the foregoing, and mixtures thereof.
    Type: Application
    Filed: May 19, 2004
    Publication date: November 25, 2004
    Inventors: Robert H. Burgener, Roger L. Felix, Gary M. Renlund