Abstract: A method includes forming a plurality of mirror periods, stacking the mirror periods, and bonding the mirror periods together to form a high reflectance mirror. At least one of the mirror periods is formed by bonding a first semiconductor layer to a first side of a film layer (where the film layer is formed on a second semiconductor layer), forming an opening through the second semiconductor layer to expose the film layer, and cutting through the first semiconductor layer, the film layer, and the second semiconductor layer. The first semiconductor layer could include a high resistivity silicon wafer, the film layer could include an oxide film, and the second semiconductor layer could include a silicon wafer. The high resistivity silicon wafer could be approximately 110 ?m thick, and the silicon wafer could be approximately 125 ?m thick. The opening through the second semiconductor layer could be 1.25 cm to 1.75 cm in width.

Abstract: A micro discharge device (MDD) capable of low voltage discharges in a variety of carrier gases for detection and/or ionization includes a sample introduction capillary having a first open end connected to a gas system and a second open end connected to a cylinder comprising a high dielectric constant material. A high voltage electrode can be placed in close proximity to the outer diameter of the cylinder and at a close linear distance to the second open end of the sample introduction capillary. A region can be formed inside the cylinder between the second end of the sample introduction capillary and the high voltage electrode wherein discharge can be located. An optical emission collector can be located through the flow manifold to a receiving location near the high voltage electrode within a region from inside the cylinder between the high voltage electrode and the manifold.

Abstract: Devices, methods, and systems for wafer bonding are described herein. One or more embodiments include forming a bond between a first wafer and a second wafer using a first material adjacent the first wafer and a second material adjacent the second wafer. The first material includes a layer of gold (Au) and a layer of indium (In), and the second material includes a layer of Au. Forming the bond between the first wafer and the second wafer includes combining the layer of Au in the first material, the layer of In in the first material, and a portion of the layer of Au in the second material, wherein an additional portion of the layer of Au in the second material is not combined with the layer of Au in the first material and the layer of In in the first material.

Abstract: A method for etching a diaphragm pressure sensor based on a hybrid anisotropic etching process. A substrate with an epitaxial etch stop layer can be etched utilizing an etching process in order to form a diaphragm at a selective portion of the substrate. The diaphragm can be oriented at an angle (e.g., 45 degree) with respect to the substrate in order to avoid an uncertain beveled portion in a stress/strain field of the diaphragm. The diaphragm can be further etched utilizing an etch finishing process to create an anisotropic edge portion on the major areas of the diaphragm and optimize the thickness and size of the diaphragm. Such an approach provides an enhanced diaphragm structure with respect to a wide range of pressure sensor applications.

Abstract: Thermal conductivity detectors and methods of operating thermal conductivity detectors are described herein. One or more device embodiments include a single fluidic channel, wherein the single fluidic channel includes a single inlet and a single outlet, and multiple sensors configured to determine one or more properties associated with a thermal conductivity of a fluid in the single fluidic channel.

Abstract: The present disclosure includes sensing device embodiments. One sensing device includes a heater layer, a resistance detector layer, constructed and arranged to indicate a temperature value based upon a correlation to a detected resistance value, an electrode layer, and a sensing layer.

Abstract: A pixel having a reflector situated on a substrate. A temperature sensitive resistor may be situated over at least a portion of the reflector. An insulator may be situated on the resistor. The resistor and insulator may effectively be very thin films. A flat metal mesh or grid may be situated on the insulator. The grid, insulator and resistor may be supported by two or more posts at approximately one-fourth of a wavelength from the reflector. The wavelength may be that of the radiation to be sensed by the pixel. The thermal mass of the combination of the temperature sensitive resistor, insulator and grid may be less than several times the thermal mass of the grid. Since the grid may be so thin for low noise performance and high sensitivity, the grid can have a flatness assured to a desired extent with stiffeners attached to portions of it.

Abstract: A chemical impedance detector having several electrodes situated on or across a dielectric layer of a substrate. The electrodes may be across or covered with a thin film polymer. Each electrode may have a set of finger-like electrodes. Each set of finger-like electrodes may be intermeshed, but not in contact, with another set of finger-like electrodes. The thin-film polymer may have a low dielectric constant and a high porous surface area. The chemical impedance detector may be incorporated in a micro fluid analyzer system.

Abstract: An apparatus includes an antenna having multiple conductive portions. The apparatus also includes a transducer electrically coupling the conductive portions of the antenna. The transducer includes a first conductive path electrically coupled to one of the conductive portions and a second conductive path electrically coupled to the first conductive path and to another of the conductive portions. The first and second conductive paths at least partially overlap along at least a substantial portion of their lengths, where the overlap occurs in a direction perpendicular to a plane of the antenna portions.

Abstract: A thermal pump for moving a sample fluid to and through an analyzer. The pump may have a lack of moving mechanical parts when pumping except for check valves. The thermal pump may have in lieu of each mechanical check valve a thermal or fluid mechanism that effectively operates as a valve without mechanical parts. The present thermal pump may be fabricated with MEMS technology. The pump may be integrated into a concentrator and/or separator of a fluid analyzer chip.

Abstract: A method includes forming a plurality of mirror periods, stacking the mirror periods, and bonding the mirror periods together to form a high reflectance mirror. At least one of the mirror periods is formed by bonding a first semiconductor layer to a first side of a film layer (where the film layer is formed on a second semiconductor layer), forming an opening through the second semiconductor layer to expose the film layer, and cutting through the first semiconductor layer, the film layer, and the second semiconductor layer. The first semiconductor layer could include a high resistivity silicon wafer, the film layer could include an oxide film, and the second semiconductor layer could include a silicon wafer. The high resistivity silicon wafer could be approximately 110 ?m thick, and the silicon wafer could be approximately 125 ?m thick. The opening through the second semiconductor layer could be 1.25 cm to 1.75 cm in width.

Abstract: A micro discharge device (MDD) capable of low voltage discharges in a variety of carrier gases for detection and/or ionization includes a sample introduction capillary having a first open end connected to a gas system and a second open end connected to a cylinder comprising a high dielectric constant material. A high voltage electrode can be placed in close proximity to the outer diameter of the cylinder and at a close linear distance to the second open end of the sample introduction capillary. A region can be formed inside the cylinder between the second end of the sample introduction capillary and the high voltage electrode wherein discharge can be located. An optical emission collector can be located through the flow manifold to a receiving location near the high voltage electrode within a region from inside the cylinder between the high voltage electrode and the manifold.

Abstract: An apparatus includes an antenna having multiple conductive portions. The apparatus also includes a transducer electrically coupling the conductive portions of the antenna. The transducer includes a first conductive path electrically coupled to one of the conductive portions and a second conductive path electrically coupled to the first conductive path and to another of the conductive portions. The first and second conductive paths at least partially overlap along at least a substantial portion of their lengths, where the overlap occurs in a direction perpendicular to a plane of the antenna portions.

Abstract: A MEMS device includes a P-N device formed on a silicon pin, which is connected to a silicon sub-assembly, and where the P-N device is formed on a silicon substrate that is used to make the silicon pin before it is embedded into a first glass wafer. In one embodiment, forming the P-N device includes selectively diffusing an impurity into the silicon pin and configuring the P-N device to operate as a temperature sensor.

Abstract: A three-wafer channel or column structure for a fluid analyzer. The structure may have a support member, membrane, or support wafer containing heaters and interactive elements. The membrane may have a channel of one wafer facing the interactive element side and a space of another wafer facing the other side. The membrane may have perforations to equalize the pressures on both sides of the membrane. A detector in the membrane may have exposure to both the channel and space for good sensitivity, as the sample may be on both sides of the membrane. The wafers may be bonded with a thin film of non-flowing viscous material. Capillaries may be attached to an inlet and outlet of the channel and be parallel to an elongated dimension of the channel.

Abstract: A chemical impedance detector having several electrodes situated on or across a dielectric layer of a substrate. The electrodes may be across or covered with a thin film polymer. Each electrode may have a set of finger-like electrodes. Each set of finger-like electrodes may be intermeshed, but not in contact, with another set of finger-like electrodes. The thin-film polymer may have a low dielectric constant and a high porous surface area. The chemical impedance detector may be incorporated in a micro fluid analyzer system.

Abstract: A chemical impedance detector having several electrodes situated on or across a dielectric layer of a substrate. The electrodes may be across or covered with a thin film polymer. Each electrode may have a set of finger-like electrodes. Each set of finger-like electrodes may be intermeshed, but not in contact, with another set of finger-like electrodes. The thin-film polymer may have a low dielectric constant and a high porous surface area. The chemical impedance detector may be incorporated in a micro fluid analyzer system.

Abstract: A flow sensor is provided having a substrate with a sensing element and flow channel over the sensing element. The sensing element senses at least one property of a fluid. The flow channel is configured such that tilting the flow sensor does not have a significant effect on the measured signal. A device for measuring tilt in a system having a fluid flow path is also provided.

Abstract: An integrated vacuum package having an added volume on a perimeter within the perimeter of a bonding seal between two wafers. The added volume of space may be an etching of material from the inside surface of the top wafer. This wafer may have vent holes that may be sealed to maintain a vacuum within the volume between the two wafers after the pump out of gas and air. The inside surface of the top wafer may have an anti-reflective pattern. Also, an anti-reflective pattern may be on the outside surface of the top wafer. The seal between the two wafers may be ring-like and have a spacer material. Also, it may have a malleable material such as solder to compensate for any flatness variation between the two facing surfaces of the wafers.

Abstract: A light detector having spaced electrodes preset by pins or a spacer within a sealed enclosure. The detector may have a MEMS structure that is separate from the sealing of the enclosure. Further, the detector may have a lens for the transmission of light onto the elements. The lens may be coated to affect the amount of light admitted into the enclosure. Light detectable by the sensor may be ultra-violet.