Abstract: Apparatus for use in preparing heterostructures having a reduced concentration of defects including apparatus for stressing semiconductor substrates to allow them to conform to a crystal having a different crystal lattice constant.

Abstract: A method for preparing a single crystal silicon ingot and a wafer sliced therefrom are provided. The ingots and wafers comprise nitrogen at a concentration of at least about 1×1014 atoms/cm3 and/or germanium at a concentration of at least about 1×1019 atoms/cm3, interstitial oxygen at a concentration of less than about 6 ppma, and a resistivity of at least about 1000 ohm cm.

Abstract: A method for preparing a single crystal silicon ingot and a wafer sliced therefrom are provided. The ingots and wafers comprise nitrogen at a concentration of at least about 1×1014 atoms/cm3 and/or germanium at a concentration of at least about 1×1019 atoms/cm3, interstitial oxygen at a concentration of less than about 6 ppma, and a resistivity of at least about 1000 ohm cm.

Abstract: Apparatus for use in preparing heterostructures having a reduced concentration of defects including apparatus for stressing semiconductor substrates to allow them to conform to a crystal having a different crystal lattice constant.

Abstract: Apparatus for use in preparing heterostructures having a reduced concentration of defects including apparatus for stressing semiconductor substrates to allow them to conform to a crystal having a different crystal lattice constant.

Abstract: Apparatus for use in preparing heterostructures having a reduced concentration of defects including apparatus for stressing semiconductor substrates to allow them to conform to a crystal having a different crystal lattice constant.

Abstract: A method for preparing a single crystal silicon ingot and a wafer sliced therefrom are provided. The ingots and wafers comprise nitrogen at a concentration of at least about 1×1014 atoms/cm3 and/or germanium at a concentration of at least about 1×1019 atoms/cm3, interstitial oxygen at a concentration of less than about 6 ppma, and a resistivity of at least about 1000 ohm cm.

Abstract: A method for preparing a single crystal silicon ingot and a wafer sliced therefrom are provided. The ingots and wafers comprise nitrogen at a concentration of at least about 1×1014 atoms/cm3 and/or germanium at a concentration of at least about 1×1019 atoms/cm3, interstitial oxygen at a concentration of less than about 6 ppma, and a resistivity of at least about 1000 ohm cm.

Abstract: A method for preparing a single crystal silicon ingot and a wafer sliced therefrom are provided. The ingots and wafers comprise nitrogen at a concentration of at least about 1×1014 atoms/cm3 and/or germanium at a concentration of at least about 1×1019 atoms/cm3, interstitial oxygen at a concentration of less than about 6 ppma, and a resistivity of at least about 1000 ohm cm.

Abstract: A method for preparing a single crystal silicon ingot and a wafer sliced therefrom are provided. The ingots and wafers comprise nitrogen at a concentration of at least about 1×1014 atoms/cm3 and/or germanium at a concentration of at least about 1×1019 atoms/cm3, interstitial oxygen at a concentration of less than about 6 ppma, and a resistivity of at least about 1000 ohm cm.

Abstract: The disclosure is directed to a method to recover the gate oxide integrity yield of a silicon wafer after rapid thermal anneal in an ambient atmosphere comprising a nitrogen containing gas, such as NH3 or N2. Generally, rapid thermal anneals in an ambient atmosphere comprising a nitrogen containing gas, such as NH3 or N2 to thereby imprint an oxygen precipitate profile can degrade the GOI yield of a silicon wafer by exposing as-grown crystal defects (oxygen precipitate) and vacancies generated by the silicon nitride film. The present invention restores GOI yield by stripping the silicon nitride layer, which is followed by wafer oxidation, which is followed by stripping the silicon oxide layer.

Abstract: Apparatus for use in preparing heterostructures having a reduced concentration of defects including apparatus for stressing semiconductor substrates to allow them to conform to a crystal having a different crystal lattice constant.

Abstract: The disclosure is directed to a method to recover the gate oxide integrity yield of a silicon wafer after rapid thermal anneal in an ambient atmosphere comprising a nitrogen containing gas, such as NH3 or N2. Generally, rapid thermal anneals in an ambient atmosphere comprising a nitrogen containing gas, such as NH3 or N2 to thereby imprint an oxygen precipitate profile can degrade the GOI yield of a silicon wafer by exposing as-grown crystal defects (oxygen precipitate) and vacancies generated by the silicon nitride film. The present invention restores GOI yield by stripping the silicon nitride layer, which is followed by wafer oxidation, which is followed by stripping the silicon oxide layer.

Abstract: Apparatus for use in preparing heterostructures having a reduced concentration of defects including apparatus for stressing semiconductor substrates to allow them to conform to a crystal having a different crystal lattice constant.

Abstract: Apparatus for use in preparing heterostructures having a reduced concentration of defects including apparatus for stressing semiconductor substrates to allow them to conform to a crystal having a different crystal lattice constant.

Abstract: Apparatus for use in preparing heterostructures having a reduced concentration of defects including apparatus for stressing semiconductor substrates to allow them to conform to a crystal having a different crystal lattice constant.

Abstract: The disclosure is directed to a method to recover the gate oxide integrity yield of a silicon wafer after rapid thermal anneal in an ambient atmosphere comprising a nitrogen containing gas, such as NH3 or N2. Generally, rapid thermal anneals in an ambient atmosphere comprising a nitrogen containing gas, such as NH3 or N2 to thereby imprint an oxygen precipitate profile can degrade the GOI yield of a silicon wafer by exposing as-grown crystal defects (oxygen precipitate) and vacancies generated by the silicon nitride film. The present invention restores GOI yield by stripping the silicon nitride layer, which is followed by wafer oxidation, which is followed by stripping the silicon oxide layer.

Abstract: Apparatus for use in preparing heterostructures having a reduced concentration of defects including apparatus for stressing semiconductor substrates to allow them to conform to a crystal having a different crystal lattice constant.

Abstract: A method for controlling oxygen precipitation in a single crystal silicon wafer having a wafer resistivity of less than about 10 milliohm-cm is provided so that the wafer has uniformly high oxygen precipitation behavior from the central axis to the circumferential edge. The single crystal silicon wafer comprises an additional dopant selected from among carbon, arsenic, and antimony.

Abstract: Apparatus and processes for preparing heterostructures with reduced strain are disclosed. The heterostructures may include a semiconductor structure that conforms to a surface layer having a different crystal lattice constant than the structure to form a relatively low-defect heterostructure.