Abstract: Some embodiments include semiconductor constructions having first and second electrically conductive lines that intersect with one another at an intersection. The first line has primarily a first width, and has narrowed regions directly against the second line and on opposing sides of the second line from one another. Electrically conductive contacts are along the first line and directly electrically coupled to the first line, and one of the electrically conductive contacts is directly against the intersection. Some embodiments include methods of forming intersecting lines of material. First and second trenches are formed, and intersect with one another at an intersection. The first trench has primarily a first width, and has narrowed regions directly against the second trench and on opposing sides of the second trench from one another. Material is deposited within the first and second trenches to substantially entirely fill the first and second trenches.

Abstract: Methods of removing metal from a portion of a substrate are useful in integrated circuit fabrication. Methods include exposing the substrate to an oxidizing environment comprising at least one oxidizing agent and at least one reducing agent, determining whether metal remaining on the portion of the substrate is less than or equal to a particular level, and if the metal remaining on the portion of the substrate is deemed to be greater than the particular level, exposing the substrate to a reducing environment comprising at least one reducing agent and at least one oxidizing agent.

Abstract: Apparatus and process for the continuous production of carbon black or carbon containing compounds. The process is performed by converting a carbon containing feedstock, including generating a plasma gas with electrical energy, accelerating the plasma gas through a nozzle, whose diameter is narrowing in the direction of the plasma gas, guiding the plasma gas into a reaction area where feedstock is injected under conditions generated by aerodynamic and electromagnetic forces, including intense rapid mixing between the plasma gas and feedstock occurs. There is no significant recirculation of feedstock into the plasma chamber, and the reaction zone does not immediately come into contact with any contact surfaces. The products of reaction are cooled, and the carbon black or carbon containing compounds are separated from the other reaction products.

Abstract: A method of making carbon black. Such method is described including generating a plasma by subjecting a plasma gas to a plasma arc, mixing a feedstock material with the plasma gas and combining the mixture in a reactor at a given reactor temperature to produce carbon black, wherein the feedstock is mixed with the plasma gas outside of the area occupied by the plasma arc. The carbon black produced by such process is also described.

Abstract: Carbon nanoparticles made in a one step process. A method of making carbon black nanoparticles is described, including adding a hydrocarbon to a heated gas to produce carbon nanoparticles that are less than 1 micron volume equivalent sphere and have an Lc greater than 3.0 nm. Elastomer composites containing such particles are also described.

Abstract: Disk shaped fine carbon particles. A fine carbon particle having a diameter of less than 3 microns and a height of less than 0.05 micron substantially in disk form are described. Admixtures with other fine particles are also described.

Abstract: A method of making carbon black. Such method is described including generating a plasma by subjecting a plasma gas to a plasma arc, mixing a feedstock material with the plasma gas and combining the mixture in a reactor at a given reactor temperature to produce carbon black, wherein the feedstock is mixed with the plasma gas outside of the area occupied by the plasma arc. The carbon black produced by such process is also described.

Abstract: Some embodiments include semiconductor constructions having first and second electrically conductive lines that intersect with one another at an intersection. The first line has primarily a first width, and has narrowed regions directly against the second line and on opposing sides of the second line from one another. Electrically conductive contacts are along the first line and directly electrically coupled to the first line, and one of the electrically conductive contacts is directly against the intersection. Some embodiments include methods of forming intersecting lines of material. First and second trenches are formed, and intersect with one another at an intersection. The first trench has primarily a first width, and has narrowed regions directly against the second trench and on opposing sides of the second trench from one another. Material is deposited within the first and second trenches to substantially entirely fill the first and second trenches.

Abstract: Some embodiments include semiconductor constructions having first and second electrically conductive lines that intersect with one another at an intersection. The first line has primarily a first width, and has narrowed regions directly against the second line and on opposing sides of the second line from one another. Electrically conductive contacts are along the first line and directly electrically coupled to the first line, and one of the electrically conductive contacts is directly against the intersection. Some embodiments include methods of forming intersecting lines of material. First and second trenches are formed, and intersect with one another at an intersection. The first trench has primarily a first width, and has narrowed regions directly against the second trench and on opposing sides of the second trench from one another. Material is deposited within the first and second trenches to substantially entirely fill the first and second trenches.

Abstract: Methods of removing metal from a portion of a substrate are useful in integrated circuit fabrication. Methods include exposing the substrate to an oxidizing environment comprising at least one oxidizing agent and at least one reducing agent, determining whether metal remaining on the portion of the substrate is less than or equal to a particular level, and if the metal remaining on the portion of the substrate is deemed to be greater than the particular level, exposing the substrate to a reducing environment comprising at least one reducing agent and at least one oxidizing agent.

Abstract: Methods of removing metal from a portion of a substrate are useful in integrated circuit fabrication. Methods include exposing the substrate to an oxidizing environment comprising at least one oxidizing agent and at least one reducing agent, and exposing the substrate to a reducing environment comprising at least one reducing agent and at least one oxidizing agent.

Abstract: A method of making carbon black. Such method is described including generating a plasma by subjecting a plasma gas to a plasma arc, mixing a feedstock material with the plasma gas and combining the mixture in a reactor at a given reactor temperature to produce carbon black, wherein the feedstock is mixed with the plasma gas outside of the area occupied by the plasma arc. The carbon black produced by such process is also described.

Abstract: A method and apparatus for making carbon black. A plasma gas is flowed into a plasma forming region containing at least one, magnetically isolated, plasma torch containing at least one electrode, and forming a plasma. Collecting the plasma formed in a cooled header and flowing the plasma through at least one reaction region to heat the reaction region, and injecting carbon black forming feedstock into the reaction region, resulting in the formation of at least one grade of carbon black. An apparatus for making carbon black is also described including a plasma forming section containing at least one, magnetically isolated plasma torch containing at least one electrode, in fluid flow communication with at least one carbon black forming reactor section, the plasma section and reactor section separated by a plasma formed collection header.

Abstract: A method of making carbon black. A method of making carbon black is described including combusting feedstock with plasma in an apparatus having a series of unit operations with individual capacities. The individual capacities of the unit operations are substantially balanced by replacing at least part of the feedstock with a feedstock having a molecular weight heavier than methane. This results, among other things, in increased utilization of the individual capacities of the unit operations and increased overall throughput.

Abstract: The integration of plasma processes with combined cycle power plant, simple cycle power plant, and steam reforming processes. A method of producing purified hydrogen gas and fuel is described including compressing a feed stream of hydrogen, adding tail gas from a plasma process to the feed stream, passing the tail gas modified feed stream into a pressure swing adsorption system generating a purified hydrogen product and a pressure swing adsorption tail gas, separating and compressing the purified hydrogen product, and separating and compressing the pressure swing adsorption tail gas for use as fuel. A method of generating and recapturing electricity from a single or combined cycle power plant is also described including flowing natural gas into a plasma process and hydrogen generating plant, flowing the hydrogen produced into the power plant, flowing natural gas into the power plant, resulting in the production of electricity.

Abstract: Novel etch techniques are provided for shaping silicon features below the photolithographic resolution limits. FinFET devices are defined by recessing oxide and exposing a silicon protrusion to an isotropic etch, at least in the channel region. In one implementation, the protrusion is contoured by a dry isotropic etch having excellent selectivity, using a downstream microwave plasma etch.

Abstract: Some embodiments include methods of treating semiconductor substrates. The substrates may be exposed to one or more conditions that vary continuously. The conditions may include temperature gradients, concentration gradients of one or more compositions that quench etchant, pH gradients to assist in removing particles, and/or concentration gradients of one or more compositions that assist in removing particles. The continuously varying conditions may be imparted by placing the semiconductor substrates in a bath of flowing rinsing solution, with the bath having at least two feed lines that provide the rinsing solution therein. One of the feed lines may be at a first condition, and the other may be at a second condition that is different from the first condition. The relative amount of rinsing solution provided to the bath by each feed line may be varied to continuously vary the condition within the bath.

Abstract: Some embodiments include semiconductor constructions having first and second electrically conductive lines that intersect with one another at an intersection. The first line has primarily a first width, and has narrowed regions directly against the second line and on opposing sides of the second line from one another. Electrically conductive contacts are along the first line and directly electrically coupled to the first line, and one of the electrically conductive contacts is directly against the intersection. Some embodiments include methods of forming intersecting lines of material. First and second trenches are formed, and intersect with one another at an intersection. The first trench has primarily a first width, and has narrowed regions directly against the second trench and on opposing sides of the second trench from one another. Material is deposited within the first and second trenches to substantially entirely fill the first and second trenches.

Abstract: Some embodiments include methods of forming isolation regions in which spin-on material (for example, polysilazane) is converted to a silicon dioxide-containing composition. The conversion may utilize one or more oxygen-containing species (such as ozone) and a temperature of less than or equal to 300° C. In some embodiments, the spin-on material is formed within an opening in a semiconductor material to form a trenched isolation region. Other dielectric materials may be formed within the opening in addition to the silicon dioxide-containing composition formed from the spin-on material. Such other dielectric materials may include silicon dioxide formed by chemical vapor deposition and/or silicon dioxide formed by high-density plasma chemical vapor deposition.

Abstract: The invention includes methods of forming field effect transistors. In one implementation, the invention encompasses a method of forming a field effect transistor on a substrate, where the field effect transistor comprises a pair of conductively doped source/drain regions, a channel region received intermediate the pair of source/drain regions, and a transistor gate received operably proximate the channel region. Such implementation includes conducting a dopant activation anneal of the pair of source/drain regions prior to depositing material from which a conductive portion of the transistor gate is made. Other aspects and implementations are contemplated.