Abstract: Forming a protective layer such as chromium, chrome alloys, nickel or cobalt as a cap over an aluminum film protects an underlying ITO layer from corrosion during the fabrication of flat panel displays such as field emission devices and the like. The presence of the protective layer during fabrication processes such as photolithography prevents diffusion of solutions through the aluminum into the ITO. This protective layer is especially effective during the development and resist stripping stages of photolithography which use solutions or solvents that would otherwise cause reductive corrosion of ITO in contact with aluminum. The methods and apparatus described herein are particularly advantageous for the fabrication of flat panel displays such as field emission devices and other display devices, because ITO is often used in such devices in contact with aluminum while exposed to corrosion-inducing media.

Abstract: Forming a protective layer such as chromium, chrome alloys, nickel or cobalt as a cap over an aluminum film protects an underlying ITO layer from corrosion during the fabrication of flat panel displays such as field emission devices and the like. The presence of the protective layer during fabrication processes such as photolithography prevents diffusion of solutions through the aluminum into the ITO. This protective layer is especially effective during the development and resist stripping stages of photolithography which use solutions or solvents that would otherwise cause reductive corrosion of ITO in contact with aluminum. The methods and apparatus described herein are particularly advantageous for the fabrication of flat panel displays such as field emission devices and other display devices, because ITO is often used in such devices in contact with aluminum while exposed to corrosion-inducing media.

Abstract: A process and apparatus directed to forming a terraced film stack of a semiconductor device, for example, a DRAM memory device, is disclosed. The present invention addresses etch undercut resulting from materials of different etch selectivity used in the film stack, which if not addressed can cause device failure.

Abstract: Some embodiments include methods of forming isolation regions in which spin-on material (for example, polysilazane) is converted to a silicon dioxide-containing composition. The conversion may utilize one or more oxygen-containing species (such as ozone) and a temperature of less than or equal to 300° C. In some embodiments, the spin-on material is formed within an opening in a semiconductor material to form a trenched isolation region. Other dielectric materials may be formed within the opening in addition to the silicon dioxide-containing composition formed from the spin-on material. Such other dielectric materials may include silicon dioxide formed by chemical vapor deposition and/or silicon dioxide formed by high-density plasma chemical vapor deposition.

Abstract: A process directed to forming a terraced film stack of a semiconductor device, for example, a DRAM memory device, is disclosed. The present invention addresses etch undercut resulting from materials of different etch selectivity used in the film stack, which if not addressed can cause device failure.

Abstract: A process and apparatus directed to forming a terraced film stack of a semiconductor device, for example, a DRAM memory device, is disclosed. The present invention addresses etch undercut resulting from materials of different etch selectivity used in the film stack, which if not addressed can cause device failure.

Abstract: A method for removing at least one photoresist defect is disclosed. The photoresist defect is exposed to a plasma produced from a source gas including oxygen and a non-oxidizing gas in a plasma reactor, wherein the oxygen is present in the source gas at from 1% by volume to about 89% by volume. The non-oxidizing gas includes a mixture of hydrogen and nitrogen, ammonia or combinations thereof. A method for processing a semiconductor device structure is also disclosed, as are embodiments of the source gas.

Abstract: Novel etch techniques are provided for shaping silicon features below the photolithographic resolution limits. FinFET devices are defined by recessing oxide and exposing a silicon protrusion to an isotropic etch, at least in the channel region. In one implementation, the protrusion is contoured by a dry isotropic etch having excellent selectivity, using a downstream microwave plasma etch.

Abstract: A process and apparatus directed to forming a terraced film stack of a semiconductor device, for example, a DRAM memory device, is disclosed. The present invention addresses etch undercut resulting from materials of different etch selectivity used in the film stack, which if not addressed can cause device failure.

Abstract: In devices such as flat panel displays, an aluminum oxide layer is provided between an aluminum layer and an ITO layer when such materials would otherwise be in contact to protect the ITO from optical and electrical defects sustained, for instance, during anodic bonding and other fabrication steps. This aluminum oxide barrier layer is preferably formed either by: (1) partially or completely anodizing an aluminum layer formed over the ITO layer, or (2) an in situ process forming aluminum oxide either over the ITO layer or over an aluminum layer formed on the ITO layer. After either of these processes, an aluminum layer is then formed over the aluminum oxide layer.

Abstract: Forming a protective layer such as chromium, chrome alloys, nickel or cobalt as a cap over an aluminum film protects an underlying ITO layer from corrosion during the fabrication of flat panel displays such as field emission devices and the like. The presence of the protective layer during fabrication processes such as photolithography prevents diffusion of solutions through the aluminum into the ITO. This protective layer is especially effective during the development and resist stripping stages of photolithography which use solutions or solvents that would otherwise cause reductive corrosion of ITO in contact with aluminum. The methods and apparatus described herein are particularly advantageous for the fabrication of flat panel displays such as field emission devices and other display devices, because ITO is often used in such devices in contact with aluminum while exposed to corrosion-inducing media.

Abstract: A multi-layered structure, and method for producing same, which may include at least one glass layer anodically bonded to an intermediate layer. The intermediate layer may function as an anodic bonding layer, an etch stop layer, and/or a hard mask layer. A template may be formed of the multi-layered structure by forming a desired pattern of openings therein by way of, for example, etching. Such a template may, for example, be used in the alignment and adherence of spacer structures to an electrode plate during the fabrication of flat panel displays. When used in this context, the construction of such a template results in more precise control of the patterning and sizing of the holes formed therein which thereby allows for more precise placement of spacer structures as well as the use of spacer structures exhibiting relatively higher aspect ratios during the fabrication of flat panel displays.

Abstract: In devices such as flat panel displays, an aluminum oxide layer is provided between an aluminum layer and an ITO layer when such materials would otherwise be in contact to protect the ITO from optical and electrical defects sustained, for instance, during anodic bonding and other fabrication steps. This aluminum oxide barrier layer is preferably formed either by: (1) partially or completely anodizing an aluminum layer formed over the ITO layer, or (2) an in situ process forming aluminum oxide either over the ITO layer or over an aluminum layer formed on the ITO layer. After either of these processes, an aluminum layer is then formed over the aluminum oxide layer.

Abstract: Forming a protective layer such as chromium, chrome alloys, nickel or cobalt as a cap over an aluminum film protects an underlying ITO layer from corrosion during the fabrication of flat panel displays such as field emission devices and the like. The presence of the protective layer during fabrication processes such as photolithography prevents diffusion of solutions through the aluminum into the ITO. This protective layer is especially effective during the development and resist stripping stages of photolithography which use solutions or solvents that would otherwise cause reductive corrosion of ITO in contact with aluminum. The methods and apparatus described herein are particularly advantageous for the fabrication of flat panel displays such as field emission devices and other display devices, because ITO is often used in such devices in contact with aluminum while exposed to corrosion-inducing media.

Abstract: Forming a protective layer such as chromium, chrome alloys, nickel or cobalt as a cap over an aluminum film protects an underlying ITO layer from corrosion during the fabrication of flat panel displays such as field emission devices and the like. The presence of the protective layer during fabrication processes such as photolithography prevents diffusion of solutions through the aluminum into the ITO. This protective layer is especially effective during the development and resist stripping stages of photolithography which use solutions or solvents that would otherwise cause reductive corrosion of ITO in contact with aluminum. The methods and apparatus described herein are particularly advantageous for the fabrication of flat panel displays such as field emission devices and other display devices, because ITO is often used in such devices in contact with aluminum while exposed to corrosion-inducing media.

Abstract: In devices such as flat panel displays, an aluminum oxide layer is provided between an aluminum layer and an ITO layer when such materials would otherwise be in contact to protect the ITO from optical and electrical defects sustained, for instance, during anodic bonding and other fabrication steps. This aluminum oxide barrier layer is preferably formed either by: (1) partially or completely anodizing an aluminum layer formed over the ITO layer, or (2) an in situ process forming aluminum oxide either over the ITO layer or over an aluminum layer formed on the ITO layer. After either of these processes, an aluminum layer is then formed over the aluminum oxide layer.

Abstract: A multi-layered structure, and method for producing same, which may include at least one glass layer anodically bonded to an intermediate layer. The intermediate layer may function as an anodic bonding layer, an etch stop layer, and/or a hard mask layer. A template may be formed of the multi-layered structure by forming a desired pattern of openings therein by way of, for example, etching. Such a template may, for example, be used in the alignment and adherence of spacer structures to an electrode plate during the fabrication of flat panel displays. When used in this context, the construction of such a template results in more precise control of the patterning and sizing of the holes formed therein which thereby allows for more precise placement of spacer structures as well as the use of spacer structures exhibiting relatively higher aspect ratios during the fabrication of flat panel displays.

Abstract: Forming a protective layer such as chromium, chrome alloys, nickel or cobalt as a cap over an aluminum film protects an underlying ITO layer from corrosion during the fabrication of flat panel displays such as field emission devices and the like. The presence of the protective layer during fabrication processes such as photolithography prevents diffusion of solutions through the aluminum into the ITO. This protective layer is especially effective during the development and resist stripping stages of photolithography which use solutions or solvents that would otherwise cause reductive corrosion of ITO in contact with aluminum. The methods and apparatus described herein are particularly advantageous for the fabrication of flat panel displays such as field emission devices and other display devices, because ITO is often used in such devices in contact with aluminum while exposed to corrosion-inducing media.

Abstract: A multi-layered structure, and method for producing same, which may include at least one glass layer anodically bonded to an intermediate layer. The intermediate layer may function as a anodic bonding layer, an etch stop layer, and/or a hard mask layer. A template may be formed of the multi-layered structure by forming a desired pattern of openings therein by way of, for example, etching. Such a template may, for example, be used in the alignment and adherence of spacer structures to an electrode plate during the fabrication of flat panel displays. When used in this context, the construction of such a template results in more precise control of the patterning and sizing of the holes formed therein which thereby allows for more precise placement of spacer structures as well as the use of spacer structures exhibiting relatively higher aspect ratios during the fabrication of flat panel displays.

Abstract: Forming a protective layer such as chromium, chrome alloys, nickel or cobalt as a cap over an aluminum film protects an underlying ITO layer from corrosion during the fabrication of flat panel displays such as field emission devices and the like. The presence of the protective layer during fabrication processes such as photolithography prevents diffusion of solutions through the aluminum into the ITO. This protective layer is especially effective during the development and resist stripping stages of photolithography which use solutions or solvents that would otherwise cause reductive corrosion of ITO in contact with aluminum. The methods and apparatus described herein are particularly advantageous for the fabrication of flat panel displays such as field emission devices and other display devices, because ITO is often used in such devices in contact with aluminum while exposed to corrosion-inducing media.