Abstract: An apparatus and system associated with memory are disclosed herein. In various embodiments, an apparatus may include first circuitry to determine a number of queued pending refresh requests for a memory bank based on a comparison of a count from a refresh-request counter to a count from a refresh-address counter; and second circuitry to set a refresh flag in response to a determination that the number of queued pending refresh requests exceeds a predetermined number. Other embodiments may be disclosed and/or claimed.

Abstract: An apparatus and system associated with memory are disclosed herein. In various embodiments, an apparatus may include first circuitry to determine a number of queued pending refresh requests for a memory bank based on a comparison of a count from a refresh-request counter to a count from a refresh-address counter; and second circuitry to set a refresh flag in response to a determination that the number of queued pending refresh requests exceeds a predetermined number. Other embodiments may be disclosed and/or claimed.

Abstract: An apparatus and system associated with memory are disclosed herein. In various embodiments, an apparatus may include first circuitry to determine a number of queued pending refresh requests for a memory bank based on a comparison of a count from a refresh-request counter to a count from a refresh-address counter; and second circuitry to set a refresh flag in response to a determination that the number of queued pending refresh requests exceeds a predetermined number. Other embodiments may be disclosed and/or claimed.

Abstract: An apparatus and system associated with memory are disclosed herein. In various embodiments, an apparatus may include first circuitry to determine a number of queued pending refresh requests for a memory bank based on a comparison of a count from a refresh-request counter to a count from a refresh-address counter; and second circuitry to set a refresh flag in response to a determination that the number of queued pending refresh requests exceeds a predetermined number. Other embodiments may be disclosed and/or claimed.

Abstract: An apparatus and system associated with memory are disclosed herein. In various embodiments, an apparatus may include first circuitry configured to queue pending refresh requests for a plurality of memory banks; and second circuitry coupled to the first circuitry and configured to set a refresh flag in response to a determination that a number of queued pending refresh requests for a memory bank from the plurality of memory banks exceeds a predetermined number. Other embodiments may be disclosed and/or claimed.

Abstract: An apparatus and system associated with memory are disclosed herein. In various embodiments, an apparatus may include first circuitry configured to queue pending refresh requests for a plurality of memory banks; and second circuitry coupled to the first circuitry and configured to set a refresh flag in response to a determination that a number of queued pending refresh requests for a memory bank from the plurality of memory banks exceeds a predetermined number. Other embodiments may be disclosed and/or claimed.

Abstract: A dynamic random access memory integrated circuit and method includes internal refresh control and an array configured to receive read and write access requests having priority over pending refresh requests, wherein refresh requests are queueable and retired on clock cycles not requiring an access of the array and complete in one clock cycle. No on-board cache memory is required. A method includes: determining within the circuit when one of the banks of the array requires a refresh, prioritizing read and write access requests over pending refresh requests, read access requests initiating an access to the array without determining whether data is available from outside the array, and retiring within a clock cycle one pending refresh request to a bank when that bank has pending refresh requests and does not also require an access of the array on that clock cycle.

Abstract: Content addressable memory (CAM) devices use both hard and soft priority techniques to allocate entries of different priority therein. The priorities of multiple CAM array blocks within the CAM device may be programmed before or as entries are loaded therein and may be reprogrammed during operation as the allocation of entries within the CAM device changes. The allocation of entries may change in response to additions or deletions of entries or as entries are reprioritized. The CAM devices include preferred priority resolution circuits that can resolve competing soft and hard priorities between multiple hit signals that are generated in response to a search operation. Such hit signals may be active to reflect the presence of at least one matching entry within a CAM array block. The resolution of which active hit signal has the highest overall priority among many can be used to facilitate the identification of the location (e.g.

Abstract: A dynamic random access memory integrated circuit and method includes internal refresh control and an array configured to receive read and write access requests having priority over pending refresh requests, wherein refresh requests are queueable and retired on clock cycles not requiring an access of the array and complete in one clock cycle. No on-board cache memory is required. A method includes: determining within the circuit when one of the banks of the array requires a refresh, prioritizing read and write access requests over pending refresh requests, read access requests initiating an access to the array without determining whether data is available from outside the array, and retiring within a clock cycle one pending refresh request to a bank when that bank has pending refresh requests and does not also require an access of the array on that clock cycle.

Abstract: Content addressable memory devices include a bidirectional interface circuit configured to receive word line signals from a plurality of global word lines and pass match information from a selected one of a plurality of CAM arrays to the plurality of global word lines in response to detecting a match in the selected one of the plurality of CAM arrays.

Abstract: An integrated circuit delay device includes a digital delay line configured to provide a percent-of-clock period delay to a timing signal received at an input thereof, in response to a control signal. This control signal has a value that specifies a length of the delay. A delay line control circuit is also provided. The delay line control circuit is configured to generate the control signal by counting multiple cycles of a high frequency oscillator signal (e.g., ring oscillator signal) having a period less than the clock period, over a time interval having a duration greater than the clock period.

Abstract: One embodiment of the present invention provides a system that measures alignment between a first semiconductor die and a second semiconductor die. The system operates by applying a pattern of voltage signals to a two-dimensional array of conductive transmitter elements that form a transmitter array on the first semiconductor die. This transmitter array is positioned over a corresponding two-dimensional array of conductive receiver elements that form a receiver array on the second semiconductor die, whereby a voltage signal applied to a transmitter element induces a voltage signal in one or more receiver elements. The system amplifies voltage signals induced in receiver elements in the receiver array, and subsequently analyzes the amplified signals to determine an alignment between the first semiconductor die and the second semiconductor die.

Abstract: One embodiment of the present invention provides an arrangement of differential pairs of wires that carry differential signals across a semiconductor chip. In this arrangement, differential pairs of wires are organized within a set of parallel tracks on the semiconductor chip. Furthermore, differential pairs of wires are organized to be non-adjacent within the tracks. This means that each true wire is separated from its corresponding complement wire by at least one intervening wire in the set of parallel tracks, thereby reducing coupling capacitance between corresponding true and complement wires. Moreover, this arrangement may include one or more twisting structures, wherein a twisting structure twists a differential pair of wires so that the corresponding true and complement wires are interchanged within the set of parallel tracks.

Abstract: A system that improves communications between capacitively coupled integrated circuit chips. The system operates by situating an interposer over capacitive communication pads on a first integrated circuit chip, wherein the interposer is made up of material that is anisotropic with respect to transmitting capacitive signals. A second integrated circuit chip is situated so that communication pads on the second integrated circuit chip are aligned to capacitively couple signals between the integrated circuit chips through the interposer. The increased dielectric permittivity caused by the interposer can improve capacitive coupling between opposing communication pads on the integrated circuit chips. The interposer can also reduce cross talk between communication pads on the first integrated circuit chip and pads adjacent to the opposing communication pads on the second integrated circuit chip.

Abstract: Content addressable memory devices may include a priority encoder therein and a first tier of CAM arrays arranged side-by-side relative to each other, on a first side of the priority encoder. A priority class detector is also provided for efficiently communicating match information that is generated during a search operation. The priority class detector passes match information from a selected priority class of rows in a selected one of the CAM arrays in the first tier to the priority encoder. This operation to pass match information is performed in response to detecting a match in the selected priority class when a search operation is performed. The priority class detector performs operations to locally encode match lines associated with a respective CAM array by priority class. These match lines are associated with a plurality of consecutive rows or consecutive pairs of rows that are arranged in a repeating priority class sequence comprising different priority classes.

Abstract: Content addressable memory devices may include a priority encoder therein and a first tier of CAM arrays arranged side-by-side relative to each other, on a first side of the priority encoder. A priority class detector is also provided for efficiently communicating match information that is generated during a search operation. The priority class detector passes match information from a selected priority class of rows in a selected one of the CAM arrays in the first tier to the priority encoder. This operation to pass match information is performed in response to detecting a match in the selected priority class when a search operation is performed. The priority class detector performs operations to locally encode match lines associated with a respective CAM array by priority class. These match lines are associated with a plurality of consecutive rows or consecutive pairs of rows that are arranged in a repeating priority class sequence comprising different priority classes.

Abstract: One embodiment of the present invention provides a system that writes to a cell in a memory using a low-voltage-swing signal across a pair of global bit-lines. During operation, the system receives a low-voltage-swing signal across a pair of global bit-lines, which is too low to reliably write the memory cell. Next, the system converts the low-voltage-swing signal to a high-voltage-swing signal, which is adequate to reliably write the memory cell. The system then writes to the memory cell by applying the high-voltage-swing signal across a pair of local bit-lines that are coupled to the memory cell. The use of low-voltage-swing signals on the global bit-lines reduces overall power consumption. Furthermore, in one embodiment of the present invention, the voltage conversion is achieved using a pair of cross-coupled NMOS transistors whose sources are directly or indirectly coupled with the global bit-lines, and whose drains are directly or indirectly coupled with the local bit-lines.

Abstract: A CAM cell is disclosed that includes a comparator and two three-transistor (3T) DRAM cells connected to a pair of associated bit lines. Data is stored using intrinsic capacitance of each 3T DRAM cell, and is applied to the gate terminal of a pull-down transistor of the comparator. During refresh operations, inverted data values are written onto the bit lines, and subsequently written from the bit lines to the 3T DRAM cells. In ternary embodiments, an inverting refresh circuit is used to re-invert the inverted data values prior to being written to the 3T DRAM cells. In one embodiment, the 3T DRAM cells are cross-coupled to the bit lines, and the inverting refresh circuit transfers bits from one bit line to the other.

Abstract: A memory circuit achieves much higher bandwidth and reduced power consumption by maintaining the maximum number of memory arrays open simultaneously. Circuit area is also saved by sharing bit line sense amplifiers between adjacent arrays. When selected, an array remains open until a different row in the same array or an array adjacent to it is selected. Thus, as long as access is made to an open row of every other array, access time and power are reduced by eliminating the need to turn arrays on and off.

Abstract: Integrated circuit delay devices include a digital delay line that is configured to provide a percent-of-clock period delay to a timing signal accepted at an enabled one of a plurality of injection ports thereof. The digital delay line may be responsive to an injection control signal having a value that sets a length of the delay by specifying a location of the enabled one of the plurality of injection ports, with the end of the delay line being a fixed output port. A delay line control circuit is also provided that is responsive to a clock signal having a period from which the percent-of-clock period delay is preferably measured. The delay line control circuit is configured to generate the injection control signal by counting multiple cycles of a high frequency ring oscillator signal having a period less than, and typically substantially less than, the clock period, over a time interval having a duration greater than, and typically substantially greater than, the clock period.