Abstract: An agricultural system includes a header with a feed roller configured to engage a crop and to drive material other than grain (MOG) of the crop toward a field. The agricultural system also includes a chopper configured to cut the MOG driven toward the field by the feed roller for discharge from the agricultural system and a control system configured to output a control signal to adjust a speed of the chopper relative to a speed of the feed roller based on a size of the MOG discharged from the agricultural system.

Abstract: Embodiments described herein may be related to apparatuses, processes, systems, and/or techniques for forming a plug between two gates within a transistor layer of a semiconductor device. In embodiments, the plug includes a cap at a top of the plug and a liner surrounding at least a portion of the cap, and a base below the cap and the liner. The cap may include a metal. A top of the cap may be even with, or substantially even with, the top of the two gates. The plug may provide a more even surface at a top of a transistor layer where the plug fills in for a gate cut. Other embodiments may be described and/or claimed.

Abstract: Embodiments of the disclosure are in the field of integrated circuit structure fabrication. In an example, an integrated circuit structure includes a plurality of conductive lines along a same direction, one of the conductive lines having a break therein. An inter-layer dielectric (ILD) structure has portions between adjacent ones of the plurality of conductive lines and has a dielectric plug portion in a location of the break in the one of the conductive lines. The dielectric plug portion of the ILD structure is continuous with one or more of the portions of the ILD structure between adjacent ones of the plurality of conductive lines. The dielectric plug portion of the ILD structure has an inwardly tapering profile from top to bottom.

Abstract: Integrated circuit structures having gate cut plugs removed from trench contacts, and methods of fabricating integrated circuit structures having gate cut plugs removed from trench contacts, are described. For example, an integrated circuit structure includes a vertical stack of horizontal nanowires. A gate electrode is over the vertical stack of horizontal nanowires. A conductive trench contact is adjacent to the gate electrode. A dielectric sidewall spacer is between the gate electrode and the conductive trench contact. A gate cut plug extends through the gate electrode and the dielectric sidewall spacer. The gate cut plug extends into but not entirely through the conductive trench contact.

Abstract: Techniques for producing a flat film surface in additive fabrication are provided. According to some aspects, a movable stage may be arranged beneath a container having a base that includes a flexible film. The movable stage may include a segmented member in which a number of segments are aligned along a common axis. The segmented member may maintain contact with the flexible film as the movable stage moves beneath the container, with the segmented member producing a flat surface of the flexible film, at least within a region above the movable stage. According to some embodiments, multiple segmented members may be provided within the movable stage, such as in parallel with one another.

Abstract: Techniques are provided herein to form semiconductor devices having gate cut structures. Adjacent semiconductor devices having semiconductor regions (e.g., fins or nanoribbons) extending in a first direction have a gate structure that extends over the semiconductor regions in a second direction and are separated by a gate cut structure extending in the first direction and interrupting the gate structure. The gate cut structure further extends between adjacent source or drain regions (corresponding to the adjacent semiconductor devices). A dielectric liner on at least a sidewall and/or top surface of the source or drain regions and also extends up a sidewall surface of the gate cut structure. In some cases, the gate structure includes a gate dielectric present on the semiconductor regions, but not present on the gate cut structure. A contact may pass through the liner and at least partially land on a source or drain region.

Abstract: Techniques are provided herein to form fin cut structures, or fin isolation structures, after the metal gate has been formed. In an example, a row of semiconductor devices each include a semiconductor region extending in a first direction between a source region and a drain region, and a gate structure extending in a second direction over the semiconductor regions of each neighboring semiconductor device along the row. A fin cut structure that includes a dielectric material interrupts the gate structure and replaces the semiconductor region of one of the semiconductor devices, effectively cutting through the length of the semiconductor device fin (or nanoribbons). The gate structure is formed first followed by removing a portion of the gate structure and removing the semiconductor region of one of the semiconductor devices to form the fin cut structure. In this way, the fin cut structure does not interfere when forming the gate structure.

Abstract: Techniques are provided herein to form an integrated circuit having a grid of gate cut structures such that a gate cut structure exists between pairs of semiconductor devices. In an example, neighboring semiconductor devices each include a semiconductor region extending between a source region and a drain region, and a gate structure extending over the semiconductor regions of the neighboring semiconductor devices. A gate cut structure is present between each pair of neighboring semiconductor devices thus interrupting the gate structure and isolating the gate of one semiconductor device from the gate of the other semiconductor device. Each of the gate cut structures may be formed at the same time in a grid-like pattern across the integrated circuit (or a portion thereof). Sidewall spacer structures on the sidewalls of the gate structure wrap around ends of each gate structure to form a given gate cut structure.

Abstract: Techniques for improved extreme ultraviolet (EUV) patterning using assist features, related transistor structures, integrated circuits, and systems, are disclosed. A number of semiconductor fins and assist features are patterned into a semiconductor substrate using EUV. The assist features increase coverage of absorber material in the EUV mask, thereby reducing bright field defects in the EUV patterning. The semiconductor fins and assist features are buried in fill material and a mask is patterned that exposes the assist features and covers the semiconductor fins. The exposed assist features are partially removed and the protected active fins are ultimately used in transistor devices.

Abstract: Embodiments of the disclosure are in the field of integrated circuit structure fabrication. In an example, an integrated circuit structure includes a dielectric material structure having a trench therein. A conductive interconnect line in the trench, the conductive interconnect line having a length and a width, the width having a cross-sectional profile, wherein the cross-sectional profile of the width of the conductive interconnect line has a bottom lateral width, a mid-height lateral width, and a top lateral width, and wherein the mid-height lateral width is greater than the bottom lateral width, and the mid-height lateral width is greater than the top lateral width.

Abstract: Spacer self-aligned via structures for gate contact or trench contact are described. In an example, an integrated circuit structure includes a plurality of gate structures above a substrate. A plurality of conductive trench contact structures is alternating with the plurality of gate structures. The integrated circuit structure also includes a plurality of dielectric spacers, a corresponding one of the plurality of dielectric spacers between adjacent ones of the plurality of gate structures and the plurality of conductive trench contact structures, wherein the plurality of dielectric spacers protrudes above the plurality of gate structures and above the plurality of conductive trench contact structures. A conductive structure is in direct contact with one of the plurality of gate structures or with one of the plurality of conductive trench contact structures.

Abstract: According to some aspects, a mixer for detection and/or removal of material in an undesired location of an additive fabrication device is provided. For instance, in an inverse stereolithography device, liquid photopolymer may adhere and cure or partially cure to a surface of the additive fabrication device in a location that may interfere with the additive fabrication process and/or cause the additive fabrication process to be unsuccessful. The mixer may be coupled to a movable structure within the additive fabrication device so that the mixer, when coupled to the movable structure, may be moved along at least one axis within the additive fabrication device. The mixer may be configured to detect and/or remove undesired material from a surface within the additive fabrication device.

Abstract: According to some aspects, a mixer for detection and/or removal of material in an undesired location of an additive fabrication device is provided. For instance, in an inverse stereolithography device, liquid photopolymer may adhere and cure or partially cure to a surface of the additive fabrication device in a location that may interfere with the additive fabrication process and/or cause the additive fabrication process to be unsuccessful. The mixer may be coupled to a movable structure within the additive fabrication device so that the mixer, when coupled to the movable structure, may be moved along at least one axis within the additive fabrication device. The mixer may be configured to detect and/or remove undesired material from a surface within the additive fabrication device.

Abstract: According to some aspects, a mixer for detection and/or removal of material in an undesired location of an additive fabrication device is provided. For instance, in an inverse stereolithography device, liquid photopolymer may adhere and cure or partially cure to a surface of the additive fabrication device in a location that may interfere with the additive fabrication process and/or cause the additive fabrication process to be unsuccessful. The mixer may be coupled to a movable structure within the additive fabrication device so that the mixer, when coupled to the movable structure, may be moved along at least one axis within the additive fabrication device. The mixer may be configured to detect and/or remove undesired material from a surface within the additive fabrication device.

Abstract: Techniques for producing a flat film surface in additive fabrication are provided. According to some aspects, a movable stage may be arranged beneath a container having a base that includes a flexible film. The movable stage may include a segmented member in which a number of segments are aligned along a common axis. The segmented member may maintain contact with the flexible film as the movable stage moves beneath the container, with the segmented member producing a flat surface of the flexible film, at least within a region above the movable stage. According to some embodiments, multiple segmented members may be provided within the movable stage, such as in parallel with one another.

Abstract: A breast milk storage system which comprises a mandrel for selective engagement with a bottle connector of a breast pump. The storage system also includes at least one clamp in pivotal engagement with the mandrel, and a lock ring. The lock ring is positioned for rotation about the mandrel and the at least one clamp. Rotation of the lock ring effectuates pivoting of the at least one clamp between an open position and a closed position. In the closed position, the at least one clamp is pivoted with respect to the mandrel and presses against the mandrel so as to retain a storage bag in place by pinching said storage bag between the at least one clamp and the mandrel.

Abstract: A personal mobility device includes a pair of rear legs and a pair of front legs pivotably connected to the rear legs via a pair of hubs. A handle, having a loop shape and including a grip portion, is slidably mounted within the pair of hubs so that the height of the grip can be adjusted. The hubs lock the front and rear legs in both an open (unfolded) and closed (folded) configuration. By sliding the handle downward through the hubs, the legs are unlocked from the open position and allowed to pivot until locked in the closed configuration. Conversely, by sliding the handle upward through the hubs, the legs are unlocked from the closed position and allowed to pivot until locked in the open configuration.

Abstract: A breast milk storage system which comprises a mandrel for selective engagement with a bottle connector of a breast pump. The storage system also includes at least one clamp in pivotal engagement with the mandrel, and a lock ring. The lock ring is positioned for rotation about the mandrel and the at least one clamp. Rotation of the lock ring effectuates pivoting of the at least one clamp between an open position and a closed position. In the closed position, the at least one clamp is pivoted with respect to the mandrel and presses against the mandrel so as to retain a storage bag in place by pinching said storage bag between the at least one clamp and the mandrel.

Abstract: An air/water valve assembly for use in an endoscope or other medical equipment is provided. The valve assembly includes a spool and a one-piece sealing member that includes a number of sealing rings. The spool can be injection molded, and the sealing member can be overmolded onto the spool. A spring, retainer, and housing are also included to form the valve assembly. As such, an air/water valve assembly may be made that can be used in a single medical procedure and then discarded in a cost-effective manner. Corresponding methods of manufacturing an air/water valve assembly are also provided.