Abstract: The present invention encompasses an improved electrotransport drug delivery device utilizing a hydrophobic modifier to prevent moisture condensation. Use of a hydrophobic modifier increases the hydrophobicity of coated parts of the device, reducing the amount of moisture uptake of the device during storage in a high humidity environment. In a further embodiment, a package of the improved electrotransport drug delivery device is provided. In addition, a method of reducing moisture condensation to an electrical device and a method of preserving an electrical device for an electrotransport drug delivery device are provided.

Abstract: A decapsulation apparatus 100 has a laser 8 that removes plastic encapsulant from a device 24. Chamber 20 is sealed. Exhaust port 9 removes debris and fumes. The device 24 is positioned and scanned using an X, Y table 2. A hinged end 4 rotates the device to an acute angle of incidence with respect to a laser 8. Endpoint detector 10 senses the exposed integrated circuit and moves or shuts down the laser 8.

Abstract: A decapsulation apparatus 100 has a laser 8 that removes plastic encapsulant from a device 24. Chamber 20 is sealed. Exhaust port 9 removes debris and fumes. The device 24 is positioned and scanned using an X,Y table 2. A hinged end 4 rotates the device to an acute angle of incidence with respect to a laser 8. Endpoint detector 10 senses the exposed integrated circuit and moves or shuts down the laser 8.

Abstract: A silicon-on-insulator integrated circuit comprises a handle die, a substantially continuous and unbroken silicide layer over the handle die, and a substantially continuous and unbroken first dielectric layer overlying one side of the silicide layer. A device silicon layer having an upper surface overlies the first dielectric layer, and a second dielectric layer on the handle die underlies the opposite side of the silicide layer. Interconnected transistors are disposed in and at the upper surface of the device silicon layer. A silicon-on insulator integrated circuit includes a handle die and a first dielectric layer formed on the handle die. A substantially continuous and unbroken silicide layer is formed on the first dielectric layer; the silicide layer has a controlled resistance and provides a diffusion barrier to impurities.

Abstract: The decapsulating method is for an integrated circuit package and includes the steps of subjecting the encapsulant to electromagnetic radiation, and, more preferably microwave radiation, to break the polymer bonds of the polymer resin and convert the encapsulant to loosened particles. The loosened particles can then be removed to thereby decapsulate the integrated circuit package. The method may further include the step of maintaining the integrated circuit package below a predetermined temperature during the subjecting step. The step of maintaining the temperature below the predetermined temperature may be performed by controlling a power of the electromagnetic radiation, such as based upon sensing a temperature of the integrated circuit package. The method may further comprise the step of varying a frequency of the microwave radiation during the subjecting step.

Abstract: A decapsulation apparatus 100 has a laser 8 that removes plastic encapsulant from a device 24. Chamber 20 is sealed. Exhaust port 9 removes debris and fumes. The device 24 is positioned and scanned using an X,Y table 2. A hinged end 4 rotates the device to an acute angle of incidence with respect to a laser 8. Endpoint detector 10 senses the exposed integrated circuit and moves or shuts down the laser 8. Docket: 87552.090401/SE-1463TD.

Abstract: A decapsulation apparatus 100 has a laser 8 that removes plastic encapsulant from a device 24. Chamber 20 is sealed. Exhaust port 9 removes debris and fumes. The device 24 is positioned and scanned using an X,Y table 2. A hinged end 4 rotates the device to an acute angle of incidence with respect to a laser 8. Endpoint detector 10 senses the exposed integrated circuit and moves or shuts down the laser 8.

Abstract: A EEPROM 140 has a storage transistor 160 with a gate insulating layer 104 of BPSG and a polysilicon gate 112.2 of the same layer as the polysilicon gate 112.1 of the FET transistor 150. The BPSG layer 104 has POHC traps that capture holes injected into N well 103.2. A positive voltage applied to N well 103.2 programs the storage transistor 160 off. Applying a positive voltage to the gate 112.2 neutralizes the holes stored in layer 104 and erases the memory of transistor 160.

Abstract: The decapsulating method is for an integrated circuit package and includes the steps of subjecting the encapsulant to electromagnetic radiation, and, more preferably microwave radiation, to break the polymer bonds of the polymer resin and convert the encapsulant to loosened particles. The loosened particles can then be removed to thereby decapsulate the integrated circuit package. The method may further include the step of maintaining the integrated circuit package below a predetermined temperature during the subjecting step. The step of maintaining the temperature below the predetermined temperature may be performed by controlling a power of the electromagnetic radiation, such as based upon sensing a temperature of the integrated circuit package. The method may further comprise the step of varying a frequency of the microwave radiation during the subjecting step.

Abstract: Low temperature wafer bonding using a chemically reacting material between wafers to form a bonded zone to bond two wafers together. Examples include silicon wafers with a silicon-oxidizing bonding liquid which also permits introduction of radiation hardening dopants and electrically active dopants as constituents of the bonding liquid. Silicon wafers also may use solid reactants which include deposited layers of metal and polysilicon to form silicide bonded zones. Oxidizers such as nitric acid may be used in the bonding liquid, and a bonding liquid may be used in conjunction with a solid bonding reactant. Dielectric layers on silicon wafers may be used when additional silicon is provided for the bonding reactions. Integrated circuits fabricated from such bonded wafers may have buried layers and radiation hardening and buried resistors.

Abstract: A EEPROM 140 has a storage transistor 160 with a gate insulating layer 104 of BPSG and a polysilicon gate 112.2 of the same layer as the polysilicon gate 112.1 of the FET transistor 150. The BPSG layer 104 has POHC traps that capture holes injected into N well 103.2. A positive voltage applied to N well 103.2 programs the storage transistor 160 off. Applying a positive voltage to the gate 112.2 neutralizes the holes stored in layer 104 and erases the memory of transistor 160.

Abstract: Low temperature wafer bonding using a silicon-oxidizing bonding liquid permits introduction of radiation hardening dopants and electrically active dopants as constituents of the bonding liquid. Oxidizers such as nitric acid may be used in the bonding liquid. Dielectric layers on the device wafer and the handle wafer may be used when additional silicon is provided for the oxidative bonding. Integrated circuits fabricated from such bonded wafers may have buried layers and radiation hardening with device silicon too thick for implantation.

Abstract: Low temperature silicon-on-insulator wafer bonding using a silicide bond formation reaction. Dielectric isolation with silicon dioxide, diamond, silicon-nitride, and so forth yields buried resistors under trench isolated silicon islands. Buried dielectrics can be thermally susceptible films like diamond due to the low temperature of the bonding silicidation reaction. Bonding silicides also provide thermal dissipating layer between a buried diamond layer and a handle wafer for good overall thermal conductivity. Bonding silicides also act as diffusion barriers.

Abstract: Low temperature wafer bonding using a silicon-oxidizing bonding liquid permits introduction of radiation hardening dopants and electrically active dopants as constituents of the bonding liquid. Oxidizers such as nitric acid may be used in the bonding liquid. Dielectric layers on the device wafer and the handle wafer may be used when additional silicon is provided for the oxidative bonding. Integrated circuits fabricated from such bonded wafers may have buried layers and radiation hardening with device silicon too thick for implantation.

Abstract: Low temperature silicon-on-insulator wafer bonding using a silicide bond formation reaction. Dielectric isolation with silicon dioxide, diamond, silicon nitride, and so forth yields buried resistors under trench isolated silicon islands. Buried dielectrics can be thermally susceptible films like diamond due to the low temperature of the bonding silicidation reaction. Bonding silicides also provide thermal dissipating layer between a buried diamond layer and a handle wafer for good overall thermal conductivity. Bonding silicides also act as diffusion barriers. The silicide bonding takes place in the presense of a liquid oxidizer such as aqueous solution of HNO.sub.3 and H.sub.2 O.sub.2.

Abstract: Low temperature wafer bonding using a silicon-oxidizing bonding liquid permits introduction of radiation hardening dopants and electrically active dopants as constituents of the bonding liquid. Oxidizers such as nitric acid may be used in the bonding liquid. Dielectric layers on the device wafer and the handle wafer may be used when additional silicon is provided for the oxidative bonding. Integrated circuits fabricated from such bonded wafers may have buried layers and radiation hardening with device silicon too thick for implantation.

Abstract: The ability of alkali hydroxide to etch silicon is enhanced by the controlled addition of metallic salts which readily dissociate in a strong base (pH.gtoreq.10) solution. When introduced into the alkali hydroxide (e.g. potassium hydroxide) solution, the controlled concentrations of additive metallic ions increase the electronegativity of the solution and thereby enhance its ability to attract electrons away from the silicon atoms within the crystal lattice being etched. By adding controlled levels of properly chosen electropositive ions, the rate at which the electrons are removed from the silicon atoms in the surface planes of the crystal lattice that are exposed to the etching solution can be controllably increased. As a result of removal of the electrons from the silicon atoms, the silicon atoms dissolve out of the crystal planes at rates modified by the degree of impurity addition, resulting in improved etching characteristics and geometries over that of conventionally employed alkali hydroxide solution.

Abstract: The ability of alkali hydroxide to etch silicon is enhanced by the controlled addition of metallic salts which readily dissociate in a strong base (pH.gtoreq.10) solution. When introduced into the alkali hydroxide (e.g. potassium hydroxide) solution, the controlled concentrations of additive metallic ions increase the electronegativity of the solution and thereby enhance its ability to attract electrons away from the silicon atoms within the crystal lattice being etched. By adding controlled levels of properly chosen electropositive ions, the rate at which the electrons are removed from the silicon atoms in the surface planes of the crystal lattice that are exposed to the etching solution can be controllably increased. As a result of removal of the electrons from the silicon atoms, the silicon atoms dissolve out of the crystal planes at rates modified by the degree of impurity addition, resulting in improved etching charcteristics and geometries over that of conventionally employed alkali hydroxide solution.

Abstract: A decapsulation apparatus 100 has a laser 8 that removes plastic encapsulant from a device 24. Chamber 20 is sealed. Exhaust port 9 removes debris and fumes. The device 24 is positioned and scanned using an X, Y table 2. A hinged end 4 rotates the device to an acute angle of incidence with respect to a laser 8. Endpoint detector 10 senses the exposed integrated circuit and moves or shuts down the laser 8.

Abstract: A decapsulation apparatus 100 has a laser 8 that removes plastic encapsulant from a device 24. Chamber 20 is sealed. Exhaust port 9 removes debris and fumes. The device 24 is positioned and scanned using an X, Y table 2. A hinged end 4 rotates the device to an acute angle of incidence with respect to a laser 8. Endpoint detector 10 senses the exposed integrated circuit and moves or shuts down the laser 8.