Abstract: Generally discussed herein are systems and apparatuses that include a dense interconnect bridge and techniques for making the same. According to an example a technique can include creating a multidie substrate, printing an interconnect bridge on the multidie substrate, electrically coupling a first die to a second die by coupling the first and second dies through the interconnect bridge.

Abstract: Embodiments of the present disclosure are directed towards techniques and configurations of interconnect structures having a polymer core in integrated circuit (IC) package assemblies. In one embodiment, an apparatus includes a first die having a plurality of transistor devices disposed on an active side of the first die and a plurality of interconnect structures electrically coupled with the first die, wherein individual interconnect structures of the plurality of interconnect structures have a polymer core, and an electrically conductive material disposed on the polymer core, the electrically conductive material being configured to route electrical signals between the transistor devices of the first die and a second die. Other embodiments may be described and/or claimed.

Abstract: An apparatus including a die including a first side and an opposite second side including a device side with contact points and lateral sidewalls defining a thickness of the die; a build-up carrier coupled to the second side of the die, the build-up carrier including a plurality of alternating layers of conductive material and insulating material, wherein at least one of the layers of conductive material is coupled to one of the contact points of the die; and at least one device within the build-up carrier disposed in an area void of a layer of patterned conductive material. A method and an apparatus including a computing device including a package including a microprocessor are also disclosed.

Abstract: Disclosed herein are integrated circuit (IC) structures having recessed conductive contacts for package on package (PoP). For example, an IC structure may include: an IC package having a first resist surface; a recess disposed in the first resist surface, wherein a bottom of the recess includes a second resist surface; a first plurality of conductive contacts located at the first resist surface; and a second plurality of conductive contacts located at the second resist surface.

Abstract: An apparatus including a die including a first side and an opposite second side including a device side with contact points and lateral sidewalls defining a thickness of the die; a build-up carrier coupled to the second side of the die, the build-up carrier including a plurality of alternating layers of conductive material and insulating material, wherein at least one of the layers of conductive material is coupled to one of the contact points of the die; and at least one device within the build-up carrier disposed in an area void of a layer of patterned conductive material. A method and an apparatus including a computing device including a package including a microprocessor are also disclosed.

Abstract: Embodiments of the present description relate to the field of fabricating microelectronic structures. The microelectronic structures may include a glass routing structure formed separately from a trace routing structure, wherein the glass routing structure is incorporated with the trace routing substrate, either in a laminated or embedded configuration. Also disclosed are embodiments of a microelectronic package including at least one microelectronic device disposed proximate to the glass routing structure of the microelectronic substrate and coupled with the microelectronic substrate by a plurality of interconnects. Further, disclosed are embodiments of a microelectronic structure including at least one microelectronic device embedded within a microelectronic encapsulant having a glass routing structure attached to the microelectronic encapsulant and a trace routing structure formed on the glass routing structure.

Abstract: Embodiments are generally directed to electromagnetic interference shielding for system-in-package technology. An embodiment of a system-in-package includes a substrate; chips and components attached to the substrate; dielectric molding over the chips and components; and an electromagnetic interference (EMI) shield. The EMI shield formed from a conductive paste, and the EMI shield provides a combined internal EMI shield between chips and components of the system in package and external EMI shield for the system-in-package.

Abstract: Disclosed are embodiments of a glass core substrate for an integrated circuit (IC) device. The glass core substrate includes a glass core and build-up structures on opposing sides of the glass core. Electrically conductive terminals may be formed on both sides of the glass core substrate. An IC die may be coupled with the terminals on one side of the substrate, whereas the terminals on the opposing side may be coupled with a next-level component, such as a circuit board. The glass core may comprise a single piece of glass in which conductors have been formed, or the glass core may comprise two or more glass sections that have been joined together, each section having conductors. The conductors extend through the glass core, and one or more of the conductors may be electrically coupled with the build-up structures disposed over the glass core. Other embodiments are described and claimed.

Abstract: Techniques and mechanisms for providing a bridge between integrated circuit (IC) chips. In an embodiment, the bridge device comprises a semiconductor substrate having disposed thereon contacts to couple the bridge device to two IC chips. Circuit structures and photonic structures of a bridge link are integrated with the substrate. The structures include an optical waveguide coupled between an electrical-to-optical signal conversion mechanism and an optical-to-electrical conversion mechanism. The bridge device converts signaling from an electrical domain to an optical domain and back to an electrical domain. In another embodiment, optical signals received via different respective contacts of an IC chip are converted by the bridge device, where the optical signals are multiplexed with each other and variously propagated with the same optical waveguide.

Abstract: An electronic package having a substrate that includes signal traces and ground traces; an electronic component mounted on an upper surface of the substrate such that the electronic component is electrically connected to the signal traces and the ground traces in the substrate; an insulating layer covering the electronic component and the upper surface of the substrate; and an electromagnetic interference shielding mold covering the insulation layer such that the electromagnetic interference shielding mold is electrically connected to the ground traces in the substrate. In some forms of the electronic package, the electromagnetic interference shielding mold is electrically connected to the ground traces through openings in the insulation layer.

Abstract: A reconstituted wafer includes a rigid mass with a flat surface and a base surface disposed parallel planar to the flat surface. A plurality of dice are embedded in the rigid mass. The plurality of dice include terminals that are exposed through coplanar with the flat surface. A process of forming the reconstituted wafer includes removing some of the rigid mass to expose the terminals, while retaining the plurality of dice in the rigid mass. A process of forming an apparatus includes separating one apparatus from the reconstituted wafer.

Abstract: Embodiments of the present description relate to the field of fabricating microelectronic structures. The microelectronic structures may include a glass routing structure formed separately from a trace routing structure, wherein the glass routing structure is incorporated with the trace routing substrate, either in a laminated or embedded configuration. Also disclosed are embodiments of a microelectronic package including at least one microelectronic device disposed proximate to the glass routing structure of the microelectronic substrate and coupled with the microelectronic substrate by a plurality of interconnects. Further, disclosed are embodiments of a microelectronic structure including at least one microelectronic device embedded within a microelectronic encapsulant having a glass routing structure attached to the microelectronic encapsulant and a trace routing structure formed on the glass routing structure.

Abstract: 3D integrated circuit packages with through-mold first level interconnects and methods to form such packages are described. For example, a semiconductor package includes a substrate. A bottom semiconductor die has an active side with a surface area. The bottom semiconductor die is coupled to the substrate with the active side distal from the substrate. A top semiconductor die has an active side with a surface area larger than the surface area of the bottom semiconductor die. The top semiconductor die is coupled to the substrate with the active side proximate to the substrate. The active side of the bottom semiconductor die is facing and conductively coupled to the active side of the top semiconductor die. The top semiconductor die is conductively coupled to the substrate by first level interconnects that bypass the bottom semiconductor die.

Abstract: Embodiments of the present disclosure are directed towards techniques and configurations of interconnect structures having a polymer core in integrated circuit (IC) package assemblies. In one embodiment, an apparatus includes a first die having a plurality of transistor devices disposed on an active side of the first die and a plurality of interconnect structures electrically coupled with the first die, wherein individual interconnect structures of the plurality of interconnect structures have a polymer core, and an electrically conductive material disposed on the polymer core, the electrically conductive material being configured to route electrical signals between the transistor devices of the first die and a second die. Other embodiments may be described and/or claimed.

Abstract: Embodiments of the present disclosure are directed towards bumpless interfaces to an embedded silicon die, in integrated circuit (IC) package assemblies. In one embodiment, a method includes forming a surrounding portion of dielectric material defining a cavity therein; placing at least one die in the cavity, the die including a contact; depositing a dielectric material on the die and the surrounding portion; etching the dielectric material to expose the contact; and depositing conductive material onto the contact. Other embodiments may be described and/or claimed.

Abstract: An apparatus including a die including a plurality of through silicon vias (TSV's) extending from a device side to a backside of the die; and a decoupling capacitor coupled to the TSV's. A method including providing a die including a plurality of through silicon vias (TSV's) extending from a device side to a backside of the die; coupling a decoupling capacitor to the backside of the die. An apparatus including a computing device including a package including a microprocessor including a device side and a backside with through silicon vias (TSV's) extending from the device side to the backside, and a decoupling capacitor coupled to the backside of the die; and a printed circuit board, wherein the package is coupled to the printed circuit board.

Abstract: Semiconductor packages and methods, systems, and apparatuses of forming such packages are described. A method of forming a semiconductor package may include encapsulating a semiconductor die with a molding compound, applying a seed layer on the die and the molding compound, applying a resist layer on the seed layer, exposing a first portion of the resist layer, and exposing a second portion of the resist layer. The first portion can include a first area of the resist layer to be used for forming a redistribution layer (RDL) without including a second area of the resist layer to be used for forming an electrical communications pathway between at least one of the contact pads and the RDL. The second portion can include the second area of the resist layer that includes the electrical communications pathway.

Abstract: 3D integrated circuit packages with through-mold first level interconnects and methods to form such packages are described. For example, a semiconductor package includes a substrate. A bottom semiconductor die has an active side with a surface area. The bottom semiconductor die is coupled to the substrate with the active side distal from the substrate. A top semiconductor die has an active side with a surface area larger than the surface area of the bottom semiconductor die. The top semiconductor die is coupled to the substrate with the active side proximate to the substrate. The active side of the bottom semiconductor die is facing and conductively coupled to the active side of the top semiconductor die. The top semiconductor die is conductively coupled to the substrate by first level interconnects that bypass the bottom semiconductor die.

Abstract: An embedded thin film capacitor and methods of its fabrication are disclosed. The embedded thin film capacitor includes two conductive plates separated by a dielectric layer. In embodiments, the capacitor is enclosed within a package substrate. A method of forming the embedded thin film capacitor includes forming a first insulating layer on a bottom plate and a first trace. A first opening is then formed in a first insulating layer to expose a first region of a bottom plate. An adhesive layer is then formed on the first insulating layer and on top of the exposed first region of the bottom plate. A second opening is formed through the insulating layer and the first insulating layer to expose a second region of the bottom plate. A top plate is formed within the first opening and a via is formed within the second opening.

Abstract: Disclosed are embodiments of a glass core substrate for an integrated circuit (IC) device. The glass core substrate includes a glass core and build-up structures on opposing sides of the glass core. Electrically conductive terminals may be formed on both sides of the glass core substrate. An IC die may be coupled with the terminals on one side of the substrate, whereas the terminals on the opposing side may be coupled with a next-level component, such as a circuit board. The glass core may comprise a single piece of glass in which conductors have been formed, or the glass core may comprise two or more glass sections that have been joined together, each section having conductors. The conductors extend through the glass core, and one or more of the conductors may be electrically coupled with the build-up structures disposed over the glass core. Other embodiments are described and claimed.