Abstract: A design structure embodied in a machine readable medium used in a design process includes a cache structure having a cache tag array associated with a eDRAM data cache comprising a plurality of cache lines, the cache tag array having an address tag, a valid bit and an access bit corresponding to each of the plurality of cache lines; and each access bit configured to indicate whether the corresponding cache line has been accessed as a result of a read or a write operation during a defined assessment period, which is smaller than retention time of data in the DRAM data cache; wherein, for any of the cache lines not accessed as a result of a read or a write operation during the defined assessment period, the individual valid bit associated therewith is set to a logic state that indicates the data in the associated cache line is invalid.

Abstract: A method and circuit for adjusting the read margin of a self-timed memory array. The electronic circuit, including: a memory cell array including a sense amplifier self-timed decode circuit adapted to set a base read time delay of the memory cell array; and a read delay adjustment circuit coupled to the memory cell array, the read delay adjustment circuit adapted to adjust the base read time delay of the memory array based on an operating frequency of the memory cell array.

Abstract: A method of cache testing and fault correction is implemented subsequent to wafer dicing. Cache testing is moved from wafer level to the built-in self test (BIST) at machine level. The BIST is utilized along with cache redundancy for fault correction. The processor initiates a cache line test using BIST upon power-up. When the processor is powered up and the test mode pins are set for the array test, the array BIST test begins. The BIST traverses the array and tests each word line for hardware faults. Upon detection of a fault, the current address is stored in one of N fault address registers contained in the processor. These fault address registers are used to address redundant cache lines and therefore act as "soft" fuses. The entire cache structure is traversed in this manner with the addresses of any line faults being stored. If the number of found faults, indicated by stored addresses, are less than the number of redundant fault lines, then the processor self test will proceed to the next test.

Abstract: A digital clock signal multiplier circuit for generating an on-chip clock signal having a higher frequency than a system clock signal. A variable delay line, coupled to receive the system clock signal, is partitioned into (N) equal segments with each segment having multiple delay elements. Each of the delay elements is tapped to allow selective output of a corresponding delay signal. Multiple control switches, each associated with one of the delay elements, provide selective control for issuance of only one delay signal from each segment of the variable delay line. Delay signals selected for output are symmetrically offset and are fed to (N) pulse generators for the production of (N) pulse signals of duration substantially less than the period of the external clock signal. An output generator is coupled to receive the pulse signals output from the (N) pulse generators and produce therefrom the internal clock signal of desired frequency.