Abstract: A portable electrical stimulation device is disclosed. In one aspect, the device includes a pair of electrodes configured to be electrically coupled to a user and a wave generator configured to provide an electrical signal to the user via the pair of electrodes. The wave generator is further configured to generate the electrical signal at one of a plurality of levels. Each of the plurality of levels is defined by at least a frequency, a peak voltage, and a peak current. For each of the levels the frequency is in a range of about 50 Hz-about 500 Hz, the peak voltage is in a range of about 40 V-about 250 V, the peak current is in a range of about 25 mA-about 150 mA, and the frequency and the peak voltage have a generally inverse relationship.

Abstract: A portable electrical stimulation device is disclosed. In one aspect, the device includes a pair of electrodes configured to be electrically coupled to a user and a wave generator configured to provide an electrical signal to the user via the pair of electrodes. The wave generator is further configured to generate the electrical signal at one of a plurality of levels. Each of the plurality of levels is defined by at least a frequency, a peak voltage, and a peak current. For each of the levels the frequency is in a range of about 50 Hz-about 500 Hz, the peak voltage is in a range of about 40 V-about 250 V, the peak current is in a range of about 25 mA-about 150 mA, and the frequency and the peak voltage have a generally inverse relationship.

Abstract: A portable electrical stimulation device is disclosed. In one aspect, the device includes a pair of electrodes configured to be electrically coupled to a user and a wave generator configured to provide an electrical signal to the user via the pair of electrodes. The wave generator is further configured to generate the electrical signal at one of a plurality of levels. Each of the plurality of levels is defined by at least a frequency, a peak voltage, and a peak current. For each of the levels the frequency is in a range of about 50 Hz-about 500 Hz, the peak voltage is in a range of about 40 V-about 250 V, the peak current is in a range of about 25 mA-about 150 mA, and the frequency and the peak voltage have a generally inverse relationship.

Abstract: A tamper-resistant bus architecture for secure lock bit transfer in an integrated circuit includes a nonvolatile memory having an n-bit storage region for storing encoded lock bits, A plurality of read access circuits are coupled to the nonvolatile memory. An n-bit tamper-resistant bus is coupled to the read access circuits. A decoder is coupled to the tamper-resistant bus. A k-bit decoded lock signal bus is coupled to the decoder. A controller is coupled to the k-bit decoded lock signal bus.

Abstract: A tamper-resistant bus architecture for secure lock bit transfer in an integrated circuit includes a nonvolatile memory having an n-bit storage region for storing encoded lock bits, A plurality of read access circuits are coupled to the nonvolatile memory. An n-bit tamper-resistant bus is coupled to the read access circuits. A decoder is coupled to the tamper-resistant bus. A k-bit decoded lock signal bus is coupled to the decoder. A controller is coupled to the k-bit decoded lock signal bus.

Abstract: A method for programming a flash memory cell comprises providing input data to the flash cell and providing a segmented programming pulse to the flash memory cell. The segmented programming pulse includes programming segments, each successive programming segment including a programming potential higher than the programming potential used in a previous programming segment, each programming segment followed by a zero-potential compare segment. The output of the flash memory cell is compared with the input data during the compare segment after each programming segment. The segmented programming pulse is terminated if the output of the flash memory cell matches the input data. The programming potential in each programming segment is increased during the programming segment. The programming potential in successive segments is either is increased or stepped up to the final value of the previous programming segment.

Abstract: A method for erasing a non-volatile memory cell interconnect switch in an FPGA comprised providing an FPGA having a core containing a plurality of non-volatile-memory-cell interconnect switches, each switch formed in a switch well region and coupled to a source/drain of an n-channel transistor formed in a grounded well region separate from the switch well region. A non-volatile memory cell interconnect switch is selected for erasing. The switch well region is disconnected from ground. A VCC potential is applied to the switch well region and to the drain of the n-channel transistor to which it is coupled and an erase potential is applied to the gate of the selected non-volatile memory cell interconnect switch.

Abstract: A method for storing data on nodes in memory cells of a non-volatile memory cell array including steps of setting non-volatile devices of the non-volatile memory cell array to a desired state, biasing pull-up devices and non-volatile devices in a first set of rows of the non-volatile memory cell array to an off state, loading data onto column lines of the non-volatile memory cell array and biasing non-volatile devices in a second set of rows in the memory cells of the non-volatile memory cell array to store data from the column lines on the nodes in the memory cells of the non-volatile memory cell array.

Abstract: A non-volatile memory cell comprises a first floating gate transistor having a source, a drain, and a gate electrically coupled to a row line. A second floating gate transistor has a source, a drain, and a gate electrically coupled to the row line. A first p-channel MOS transistor has a source, a drain, and a gate, the drain of the first p-channel MOS transistor electrically coupled to the drain of the first floating gate transistor forming a first common node. A second p-channel MOS transistor has a source, a drain, and a gate, the first drain of the second p-channel MOS transistor electrically coupled to the drain of the second floating gate transistor forming a second common node, the gate of the second p-channel MOS transistor electrically coupled to the first common node, and the second common node electrically coupled to the gate of the first p-channel MOS transistor.

Abstract: A method for programming a flash memory cell comprises providing input data to the flash cell and providing a segmented programming pulse to the flash memory cell. The segmented programming pulse includes programming segments, each successive programming segment including a programming potential higher than the programming potential used in a previous programming segment, each programming segment followed by a zero-potential compare segment. The output of the flash memory cell is compared with the input data during the compare segment after each programming segment. The segmented programming pulse is terminated if the output of the flash memory cell matches the input data. The programming potential in each programming segment is increased during the programming segment. The programming potential in successive segments is either is increased or stepped up to the final value of the previous programming segment.

Abstract: A method for storing data on nodes in memory cells of a non-volatile memory cell array including steps of setting non-volatile devices of the non-volatile memory cell array to a desired state, biasing pull-up devices and non-volatile devices in a first set of rows of the non-volatile memory cell array to an off state, loading data onto column lines of the non-volatile memory cell array and biasing non-volatile devices in a second set of rows in the memory cells of the non-volatile memory cell array to store data from the column lines on the nodes in the memory cells of the non-volatile memory cell array.

Abstract: A programmable interconnect cell for selectively connecting circuit nodes of a field programmable integrated circuit array in a semiconductor substrate includes a switch field effect transistor, a sense field effect transistor, and an electron tunneling device with the transistors and electron tunneling device having interconnected floating gates and interconnected control gates. The floating gates comprise a first polysilicon layer which is restricted to each cell, and the control gates comprise a second polysilicon layer which extends to adjacent cells in the row. The source/drain regions of the sense transistor extend to source/drain regions of sense amplifiers in adjacent rows. Programming and erasing of the switch transistor is effected entirely by electron tunneling in the electron tunneling device.

Abstract: Disclosed is a FPGA cell and array structure which use FN tunneling for program and erase. Each cell comprises a switch floating gate field effect transistor and a sense floating gate field effect transistor with the floating gates being common and the control gates being common. Programming of a cell is effected by voltage biasing the common control gate line and the source/drains of the sense transistor. The source/drains of the sense field effect transistor are formed from buried doped layers (e.g. N+ in a P-doped substrate) which are formed prior to formation of the polysilicon floating gate and control gate. Lateral diffusion of dopant from the buried source/drains into the channel beneath the floating gate facilitates electron tunneling during erase and program operations, and the graded junctions of the buried source/drains lower band-to-band tunneling leakage.

Abstract: Disclosed is a FPGA cell and array structure which use FN tunneling for program and erase. Each cell comprises a switch floating gate field effect transistor and a sense floating gate field effect transistor with the floating gates being common and the control gates being common. Programming of a cell is effected through a buried bitline in juxtaposition with the switch transistor and the sense transistor over which are the floating gate and the control gate. The sense transistor can be fabricated simultaneously with fabrication of the switch transistor whereby the two transistors are identical in dopant concentrations.

Abstract: Disclosed is a FPGA cell and array structure which use FN tunneling for program and erase. Each cell comprises a switch floating gate field effect transistor and a sense floating gate field effect transistor with the floating gates being common and the control gates being common. Programming of a cell is effected by voltage biasing the common control gate line and the source/drains of the sense transistor.

Abstract: The present invention provides for a programming portion of an FPGA cell of an integrated circuit and a process of manufacturing the programming portion. The programming portion has an EPROM transistor and a separated select transistor with the gate of the select transistor connected to the control gate of the EPROM transistor. Both transistors share a common N+ source/drain region, which is self-aligned with the gates of both transistors. With the select transistor separated from the EPROM transistor and the self-aligned common N+ region, the threshold voltage V.sub.T of the select transistor can be set precisely. This allows good control over the programming voltage for the control gate of the EPROM transistor and the time to program the floating gate of the EPROM transistor.

Abstract: An architecture for a serial multi-chip package digital controller including a controller oriented processor die and a separate non-volatile memory die. The architecture provides for a low pin count on the package, minimal electrical connections on and between the dice, and a minimal number of registers by making use of significant multiplexing to allow many of the registers and signal lines to serve multiple functions responsive to the mode of operation and other control signals.An input data register on the non-volatile memory die and a related multiplexer allows data from different sources to be loaded into the input data register depending on the mode of operation. Also, the output of the input data register is coupled to plural locations so that the destination of the data can also be switched responsive to the mode of operation.

Abstract: An architecture for a serial multi-chip package digital controller including a controller oriented processor die and a separate non-volatile memory die. The architecture provides for a low pin count on the package, minimal electrical connections on and between the dice, and a minimal number of registers by making use of significant multiplexing to allow many of the registers and signal lines to serve multiple functions responsive to the mode of operation and other control signals. A plurality of feed-throughs are provided on the non-volatile memory die to provide communication paths from the processor die to package pads which are in the shadow of the non-volatile memory die relative to the processor die and thus prevent direct connection from the processor die to the package pad. In normal run mode, these pads are exclusively used as feed-through, providing a direct connection between a specific pad on the processor die and a specific pad on the package.

Abstract: An architecture for a serial multi-chip package digital controller including a controller oriented processor die and a separate non-volatile memory die. The architecture provides for a low pin count on the package, minimal electrical connections on and between the dice, and a minimal number of registers by making use of significant multiplexing to allow many of the registers and signal lines to serve multiple functions responsive to the mode of operation and other control signals. A reset intercept circuit is provided on the non-volatile memory die for intercepting the signal which is provided to the reset input of the non-volatile memory die from external of the multi chip package. The reset intercept circuit provides a modified version thereof to the processor die. Particularly, the reset intercept circuit performs the function of sending a modified version of the reset signal to the processor die responsive to the present mode of operation of the multi chip package at the time the reset signal is received.

Abstract: An architecture for a serial multi-chip package digital controller including a controller oriented processor die and a separate non-volatile memory die. The architecture provides for a low pin count on the package, minimal electrical connections on and between the dice, and a minimal number of registers by making use of significant multiplexing to allow many of the registers and signal lines to serve multiple functions responsive to the mode of operation and other control signals.The processor includes an in-system programming mode including first and second memory interface control registers on the processor die and the memory die, respectively, for receiving control bits from the processor core for controlling multiplexers on the dies. The various bit output lines of the first memory interface control register are coupled to the control inputs of the multiplexers.