Abstract: Embodiments of the present description relate to the field of fabricating microelectronic structures. The microelectronic structures may include a glass routing structure formed separately from a trace routing structure, wherein the glass routing structure is incorporated with the trace routing substrate, either in a laminated or embedded configuration. Also disclosed are embodiments of a microelectronic package including at least one microelectronic device disposed proximate to the glass routing structure of the microelectronic substrate and coupled with the microelectronic substrate by a plurality of interconnects. Further, disclosed are embodiments of a microelectronic structure including at least one microelectronic device embedded within a microelectronic encapsulant having a glass routing structure attached to the microelectronic encapsulant and a trace routing structure formed on the glass routing structure.

Abstract: A method for singulating dies from a wafer includes laser scribing a continuous line on each side of the die, and laser ablating an area adjacent the laser scribed continuous line on each side of the die. The laser ablations in the area adjacent the laser scribed continuous line on each side of the die being spaced from one another. The method also includes sawing the laser abated area adjacent the continuous line. A method for singulating dies from a wafer includes laser scribing a first continuous line, laser scribing a second continuous line spaced apart from the first continuous line, and laser scribing a third continuous line. The third continuous line positioned between the first continuous line and the second continuous line. The third continuous line overlaps the second continuous line and the third continuous line.

Abstract: A method for singulating dies from a wafer includes laser scribing a continuous line on each side of the die, and laser ablating an area adjacent the laser scribed continuous line on each side of the die. The laser ablations in the area adjacent the laser scribed continuous line on each side of the die being spaced from one another. The method also includes sawing the laser abated area adjacent the continuous line. A method for singulating dies from a wafer includes laser scribing a first continuous line, laser scribing a second continuous line spaced apart from the first continuous line, and laser scribing a third continuous line. The third continuous line positioned between the first continuous line and the second continuous line. The third continuous line overlaps the second continuous line and the third continuous line.

Abstract: A method for singulating dies from a wafer includes laser scribing a continuous line on each side of the die, and laser ablating an area adjacent the laser scribed continuous line on each side of the die. The laser ablations in the area adjacent the laser scribed continuous line on each side of the die being spaced from one another. The method also includes sawing the laser abated area adjacent the continuous line. A method for singulating dies from a wafer includes laser scribing a first continuous line, laser scribing a second continuous line spaced apart from the first continuous line, and laser scribing a third continuous line. The third continuous line positioned between the first continuous line and the second continuous line. The third continuous line overlaps the second continuous line and the third continuous line.

Abstract: One example electronic assembly includes a substrate that has a plurality of contacts which become bonded to a plurality of contacts on a die. The electronic assembly further includes a male member that extends from at least one of the substrate and the die and a female member that extends from the other of the substrate and the die. The male member is inserted into the female member to align the die relative to the substrate. The male member and the female member may have any configuration as long as one or more portions of the male member extend partially, or wholly, into the female member. An example method includes aligning a die relative to a substrate by inserting a male member that extends from one of the die and the substrate into a female member that extends from the other of the die and the substrate.

Abstract: A thermally conductive member is placed adjacent a microelectronic die with a thermal interface material between the microelectronic die and a wetting layer formed on a surface of the thermally conductive member. The thermal interface material is heated to cause reflow thereof. The first portion of the thermal interface material is directed by the wetting layer into a first cavity formed in the thermally conductive member. The thermal interface material is then allowed to cool and solidify.

Abstract: One example electronic assembly includes a substrate that has a plurality of contacts which become bonded to a plurality of contacts on a die. The electronic assembly further includes a male member that extends from at least one of the substrate and the die and a female member that extends from the other of the substrate and the die. The male member is inserted into the female member to align the die relative to the substrate. The male member and the female member may have any configuration as long as one or more portions of the male member extend partially, or wholly, into the female member. An example method includes aligning a die relative to a substrate by inserting a male member that extends from one of the die and the substrate into a female member that extends from the other of the die and the substrate.

Abstract: A marking is formed on an underfill between a die and a substrate.

Abstract: A thermally conductive member is placed adjacent a microelectronic die with a thermal interface material between the microelectronic die and a wetting layer formed on a surface of the thermally conductive member. The thermal interface material is heated to cause reflow thereof. The first portion of the thermal interface material is directed by the wetting layer into a first cavity formed in the thermally conductive member. The thermal interface material is then allowed to cool and solidify.

Abstract: A marking is formed on an underfill between a die and a substrate.

Abstract: A method for singulating dies from a wafer includes laser scribing a continuous line on each side of the die, and laser ablating an area adjacent the laser scribed continuous line on each side of the die. The laser ablations in the area adjacent the laser scribed continuous line on each side of the die being spaced from one another. The method also includes sawing the laser abated area adjacent the continuous line. A method for singulating dies from a wafer includes laser scribing a first continuous line, laser scribing a second continuous line spaced apart from the first continuous line, and laser scribing a third continuous line. The third continuous line positioned between the first continuous line and the second continuous line. The third continuous line overlaps the second continuous line and the third continuous line.

Abstract: A microprocessor package and a method of dissipating heat therefrom have improved thermal performance by utilizing low modulus thermal interface material between the flip chip, central processing unit and a heat spreader in the package. A modulus of elasticity of the thermal interface material in the kPa range is preferably provided by a cured, filled polymer gel which is lightly crosslinked. The gel thermal interface material enables the package to have a post end-of-line and post reliability testing thermal resistance across the thermal interface material between the flip chip and the heat spreader of <0.45 cm2° C./Watt. Mitigation of thin film cracking in die and prevention of interfacial delamination upon temperature cycling are also attained.

Abstract: A microprocessor package and a method of dissipating heat therefrom have improved thermal performance by utilizing low modulus thermal interface material between the flip chip, central processing unit and a heat spreader in the package. A modulus of elasticity of the thermal interface material in the kPa range is preferably provided by a cured, filled polymer gel which is lightly crosslinked. The gel thermal interface material enables the package to have a post end-of-line and post reliability testing thermal resistance across the thermal interface material between the flip chip and the heat spreader of <0.45 cm2 ° C./Watt. Mitigation of thin film cracking in die and prevention of interfacial delamination upon temperature cycling are also attained.

Abstract: An electronic cartridge which includes a cover that is electrically coupled to a substrate by a clip. An integrated circuit package is mounted to the substrate and at least partially enclosed by the cover. The clips and cover may be connected to a ground plane of the substrate. The cover and substrate may create a “shield” about the integrated circuit package so that any electromagnetic field that flows from the package is grounded to the substrate.

Abstract: A substrate for reducing electromagnetic emissions is provided. The substrate may include a plurality of ground layers, signal layers and power layers. All of the layers other than the ground layer are provided with a ground ring that may extend around the perimeter of the layer. The ground rings are electrically coupled together by ground stitching or vias that are randomly spaced. The random spacing of the ground stitching is based on the operating frequencies of the integrated circuit devices mounted on the substrate. Additional shielding may be provided by providing a cover assembly made of any conductive material that is coupled to the exposed ground rings on the uppermost and lowermost surfaces of the substrate. The cover assembly is coupled to the exposed ground rings in a randomized pattern. The device provides a virtual electrical ground cage in which the internal signal layers are totally enclosed, thereby reducing electromagnetic emissions.

Abstract: A method and apparatus for controlling the thickness of a thermal interface between a processor die and a thermal plate in a microprocessor assembly are provided. The apparatus includes a generally rectangular shaped thermal top cover having a recessed portion of predetermined depth and aperture therein. The thermal top cover fits over the processor die. A thermal interface layer fills the recessed portion of the thermal top cover covering the processor die. The depth of the recessed portion is greater than the thickness of the processor die so that the thickness of the thermal interface layer is controlled. A thermal plate is placed over the thermal top cover in contact with the thermal grease so as to form a thermal path from the processor die to the thermal plate.

Abstract: An electronic cartridge which includes a cover that is electrically coupled to a substrate by a clip. An integrated circuit package is mounted to the substrate and at least partially enclosed by the cover. The clips and cover may be connected to a ground plane of the substrate. The cover and substrate may create a "shield" about the integrated circuit package so that any electro-magnetic field that flows from the package is grounded to the substrate.

Abstract: Process and composition for removing H.sub.2 S and like sulfides from gas streams by contact with a substituted aromatic nitrile having an electron-attracting substituent on the aromatic ring at least as strong as halogen (e.g., isophthalonitrile) and an organic tertiary amine in an inert organic solvent such as N-methyl-2-pyrrolidone.

Abstract: Process and composition for removing H.sub.2 S and like sulfides from gas streams by contact with a substituted aromatic nitrile having an electron-attracting substituent on the aromatic ring at least as strong as halogen (e.g., isophthalonitrile) and an organic tertiary amine in an inert organic solvent such as N-methyl-2-pyrrolidone.