Patents by Inventor Robert Strittmatter

Robert Strittmatter has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Ion implanted and self aligned gate structure for GaN transistors
    Patent number: 8853749
    Abstract: A self-aligned transistor gate structure that includes an ion-implanted portion of gate material surrounded by non-implanted gate material on each side. The gate structure may be formed, for example, by applying a layer of GaN material over an AlGaN barrier layer and implanting a portion of the GaN layer to create the gate structure that is laterally surrounded by the GaN layer.
    Type: Grant
    Filed: January 31, 2012
    Date of Patent: October 7, 2014
    Assignee: Efficient Power Conversion Corporation
    Inventors: Alexander Lidow, Jianjun Cao, Robert Beach, Robert Strittmatter, Guang Y. Zhao, Alana Nakata
  • Enhancement mode GaN HEMT device with gate spacer and method for fabricating the same
    Patent number: 8823012
    Abstract: Enhancement-mode GaN devices having a gate spacer, a gate metal material and a gate compound that are self-aligned, and a methods of forming the same. The materials are patterned and etched using a single photo mask, which reduces manufacturing costs. An interface of the gate spacer and the gate compound has lower leakage than the interface of a dielectric film and the gate compound, thereby reducing gate leakage. In addition, an ohmic contact metal layer is used as a field plate to relieve the electric field at a doped III-V gate compound corner towards the drain contact, which leads to lower gate leakage current and improved gate reliability.
    Type: Grant
    Filed: February 23, 2012
    Date of Patent: September 2, 2014
    Assignee: Efficient Power Conversion Corporation
    Inventors: Alexander Lidow, Robert Beach, Alana Nakata, Jianjun Cao, Guang Yuan Zhao, Robert Strittmatter, Fang Chang Liu
  • ION IMPLANTED AND SELF ALIGNED GATE STRUCTURE FOR GaN TRANSISTORS
    Publication number: 20120193688
    Abstract: A self-aligned transistor gate structure that includes an ion-implanted portion of gate material surrounded by non-implanted gate material on each side. The gate structure may be formed, for example, by applying a layer of GaN material over an AlGaN barrier layer and implanting a portion of the GaN layer to create the gate structure that is laterally surrounded by the GaN layer.
    Type: Application
    Filed: January 31, 2012
    Publication date: August 2, 2012
    Inventors: Alexander Lidow, Jianjun Cao, Robert Beach, Robert Strittmatter, Guang Y. Zhao, Alana Nakata
  • ENHANCEMENT MODE GaN HEMT DEVICE WITH GATE SPACER AND METHOD FOR FABRICATING THE SAME
    Publication number: 20120175631
    Abstract: Enhancement-mode GaN devices having a gate spacer, a gate metal material and a gate compound that are self-aligned, and a methods of forming the same. The materials are patterned and etched using a single photo mask, which reduces manufacturing costs. An interface of the gate spacer and the gate compound has lower leakage than the interface of a dielectric film and the gate compound, thereby reducing gate leakage. In addition, an ohmic contact metal layer is used as a field plate to relieve the electric field at a doped III-V gate compound corner towards the drain contact, which leads to lower gate leakage current and improved gate reliability.
    Type: Application
    Filed: February 23, 2012
    Publication date: July 12, 2012
    Inventors: Alexander Lidow, Robert Beach, Alana Nakata, Jianjun Cao, Guang Yuan Zhao, Robert Strittmatter, Fang Chang Liu