Patents by Inventor Robert T. Bondokov

Robert T. Bondokov has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Impurity control during formation of aluminum nitride crystals and thermal treatment of aluminum nitride crystals
    Patent number: 11939700
    Abstract: In various embodiments, single-crystal aluminum nitride boules and substrates are formed from the vapor phase with controlled levels of impurities such as carbon. Single-crystal aluminum nitride may be heat treated via quasi-isothermal annealing and controlled cooling to improve its ultraviolet absorption coefficient and/or Urbach energy.
    Type: Grant
    Filed: October 8, 2021
    Date of Patent: March 26, 2024
    Assignee: Crystal IS, Inc.
    Inventors: Robert T. Bondokov, James R. Grandusky, Jianfeng Chen, Shichao Wang, Toru Kimura, Thomas Miebach, Keisuke Yamaoka, Leo J. Schowalter
  • Thermal control for formation and processing of aluminum nitride
    Patent number: 11913136
    Abstract: In various embodiments, controlled heating and/or cooling conditions are utilized during the fabrication of aluminum nitride single crystals and aluminum nitride bulk polycrystalline ceramics. Thermal treatments may also be utilized to control properties of aluminum nitride crystals after fabrication.
    Type: Grant
    Filed: January 5, 2023
    Date of Patent: February 27, 2024
    Assignee: CRYSTAL IS, INC.
    Inventors: Robert T. Bondokov, Jianfeng Chen, Keisuke Yamaoka, Shichao Wang, Shailaja P. Rao, Takashi Suzuki, Leo J. Schowalter
  • Aluminum nitride single crystals having controllable color and methods of forming them
    Patent number: 11840773
    Abstract: In various embodiments, single-crystal aluminum nitride boules and substrates are highly visibly transparent and have low Urbach energies and/or absorption coefficients at deep-ultraviolet wavelengths. The single-crystal aluminum nitride may function as a platform for the fabrication of light-emitting devices such as light-emitting diodes and lasers.
    Type: Grant
    Filed: December 8, 2021
    Date of Patent: December 12, 2023
    Assignee: Crystal IS, Inc.
    Inventors: Robert T. Bondokov, James R. Grandusky, Jianfeng Chen, Sean P. Branagan, Shichao Wang, Toru Kimura, Thomas Miebach, Keisuke Yamaoka, Leo J. Schowalter
  • Large, UV-transparent aluminum nitride single crystals
    Patent number: 11828002
    Abstract: In various embodiments, single-crystal aluminum nitride boules and substrates having high transparency to ultraviolet light and low defect density are formed. The single-crystal aluminum nitride may function as a platform for the fabrication of light-emitting devices such as light-emitting diodes and lasers.
    Type: Grant
    Filed: February 22, 2021
    Date of Patent: November 28, 2023
    Assignee: Crystal IS, Inc.
    Inventors: Robert T. Bondokov, Jianfeng Chen, Keisuke Yamaoka, Shichao Wang, Shailaja P. Rao, Takashi Suzuki, Leo J. Schowalter
  • ALUMINUM NITRIDE CRYSTALS HAVING LOW URBACH ENERGY AND HIGH TRANSPARENCY TO DEEP-ULTRAVIOLET WAVELENGTHS
    Publication number: 20230183883
    Abstract: In various embodiments, single-crystal aluminum nitride boules and substrates have low Urbach energies and/or absorption coefficients at deep-ultraviolet wavelengths. The single-crystal aluminum nitride may function as a platform for the fabrication of light-emitting devices such as light-emitting diodes and lasers.
    Type: Application
    Filed: December 13, 2022
    Publication date: June 15, 2023
    Inventors: Robert T. BONDOKOV, James R. GRANDUSKY, Jianfeng CHEN, Shichao WANG, Toru KIMURA, Thomas MIEBACH, Keisuke YAMAOKA, Leo J. SCHOWALTER
  • THERMAL CONTROL FOR FORMATION AND PROCESSING OF ALUMINUM NITRIDE
    Publication number: 20230167584
    Abstract: In various embodiments, controlled heating and/or cooling conditions are utilized during the fabrication of aluminum nitride single crystals and aluminum nitride bulk polycrystalline ceramics. Thermal treatments may also be utilized to control properties of aluminum nitride crystals after fabrication.
    Type: Application
    Filed: January 5, 2023
    Publication date: June 1, 2023
    Inventors: Robert T. BONDOKOV, Jianfeng CHEN, Keisuke YAMAOKA, Shichao WANG, Shailaja P. RAO, Takashi SUZUKI, Leo J. SCHOWALTER
  • Thermal control for formation and processing of aluminum nitride
    Patent number: 11578425
    Abstract: In various embodiments, controlled heating and/or cooling conditions are utilized during the fabrication of aluminum nitride single crystals and aluminum nitride bulk polycrystalline ceramics. Thermal treatments may also be utilized to control properties of aluminum nitride crystals after fabrication.
    Type: Grant
    Filed: October 28, 2020
    Date of Patent: February 14, 2023
    Assignee: Crystal IS, Inc.
    Inventors: Robert T. Bondokov, Jianfeng Chen, Keisuke Yamaoka, Shichao Wang, Shailaja P. Rao, Takashi Suzuki, Leo J. Schowalter
  • Aluminum nitride crystals having low urbach energy and high transparency to deep-ultraviolet wavelengths
    Patent number: 11555256
    Abstract: In various embodiments, single-crystal aluminum nitride boules and substrates have low Urbach energies and/or absorption coefficients at deep-ultraviolet wavelengths. The single-crystal aluminum nitride may function as a platform for the fabrication of light-emitting devices such as light-emitting diodes and lasers.
    Type: Grant
    Filed: June 18, 2019
    Date of Patent: January 17, 2023
    Assignee: CRYSTAL IS, INC.
    Inventors: Robert T. Bondokov, James R. Grandusky, Jianfeng Chen, Shichao Wang, Toru Kimura, Thomas Miebach, Keisuke Yamaoka, Leo J. Schowalter
  • Two-stage seeded growth of large aluminum nitride single crystals
    Patent number: 11384449
    Abstract: In various embodiments, growth of large, high-quality single crystals of aluminum nitride is enabled via a two-stage process utilizing two different crystalline seeds.
    Type: Grant
    Filed: March 13, 2020
    Date of Patent: July 12, 2022
    Assignee: CRYSTAL IS, INC.
    Inventors: Leo J. Schowalter, Robert T. Bondokov, James R. Grandusky
  • IMPURITY CONTROL DURING FORMATION OF ALUMINUM NITRIDE CRYSTALS AND THERMAL TREATMENT OF ALUMINUM NITRIDE CRYSTALS
    Publication number: 20220074072
    Abstract: In various embodiments, single-crystal aluminum nitride boules and substrates are formed from the vapor phase with controlled levels of impurities such as carbon. Single-crystal aluminum nitride may be heat treated via quasi-isothermal annealing and controlled cooling to improve its ultraviolet absorption coefficient and/or Urbach energy.
    Type: Application
    Filed: October 8, 2021
    Publication date: March 10, 2022
    Inventors: Robert T. BONDOKOV, James R. GRANDUSKY, Jianfeng CHEN, Shichao WANG, Toru KIMURA, Thomas MIEBACH, Keisuke YAMAOKA, Leo J. SCHOWALTER
  • Impurity control during formation of aluminum nitride crystals and thermal treatment of aluminum nitride crystals
    Patent number: 11168411
    Abstract: In various embodiments, single-crystal aluminum nitride boules and substrates are formed from the vapor phase with controlled levels of impurities such as carbon. Single-crystal aluminum nitride may be heat treated via quasi-isothermal annealing and controlled cooling to improve its ultraviolet absorption coefficient and/or Urbach energy.
    Type: Grant
    Filed: June 18, 2019
    Date of Patent: November 9, 2021
    Assignee: CRYSTAL IS, INC.
    Inventors: Robert T. Bondokov, James R. Grandusky, Jianfeng Chen, Shichao Wang, Toru Kimura, Thomas Miebach, Keisuke Yamaoka, Leo J. Schowalter
  • Defect reduction in seeded aluminum nitride crystal growth
    Patent number: 11124892
    Abstract: Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density ?100 cm?2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.
    Type: Grant
    Filed: May 22, 2020
    Date of Patent: September 21, 2021
    Assignee: CRYSTAL IS, INC.
    Inventors: Robert T. Bondokov, Kenneth E. Morgan, Leo J. Schowalter, Glen A. Slack
  • LARGE, UV-TRANSPARENT ALUMINUM NITRIDE SINGLE CRYSTALS
    Publication number: 20210254240
    Abstract: In various embodiments, single-crystal aluminum nitride boules and substrates having high transparency to ultraviolet light and low defect density are formed. The single-crystal aluminum nitride may function as a platform for the fabrication of light-emitting devices such as light-emitting diodes and lasers.
    Type: Application
    Filed: February 22, 2021
    Publication date: August 19, 2021
    Inventors: Robert T. BONDOKOV, Jianfeng CHEN, Keisuke YAMAOKA, Shichao WANG, Shailaja P. RAO, Takashi SUZUKI, Leo J. SCHOWALTER
  • Defect reduction in seeded aluminum nitride crystal growth
    Patent number: 11015263
    Abstract: Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density?100 cm?2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.
    Type: Grant
    Filed: July 9, 2019
    Date of Patent: May 25, 2021
    Assignee: CRYSTAL IS, INC.
    Inventors: Robert T. Bondokov, Leo J. Schowalter, Kenneth Morgan, Glen A. Slack, Shailaja P. Rao, Shawn Robert Gibb
  • THERMAL CONTROL FOR FORMATION AND PROCESSING OF ALUMINUM NITRIDE
    Publication number: 20210108336
    Abstract: In various embodiments, controlled heating and/or cooling conditions are utilized during the fabrication of aluminum nitride single crystals and aluminum nitride bulk polycrystalline ceramics. Thermal treatments may also be utilized to control properties of aluminum nitride crystals after fabrication.
    Type: Application
    Filed: October 28, 2020
    Publication date: April 15, 2021
    Inventors: Robert T. BONDOKOV, Jianfeng CHEN, Keisuke YAMAOKA, Shichao WANG, Shailaja P. RAO, Takashi SUZUKI, Leo J. SCHOWALTER
  • UV-transparent aluminum nitride single crystal having a diameter of 35 mm to 150 mm and a predefined UV transparency metric at a wavelength of 265 nm
    Patent number: 10954608
    Abstract: In various embodiments, single-crystal aluminum nitride boules and substrates having high transparency to ultraviolet light and low defect density are formed. The single-crystal aluminum nitride may function as a platform for the fabrication of light-emitting devices such as light-emitting diodes and lasers.
    Type: Grant
    Filed: November 9, 2018
    Date of Patent: March 23, 2021
    Assignee: CRYSTAL IS, INC.
    Inventors: Robert T. Bondokov, Jianfeng Chen, Keisuke Yamaoka, Shichao Wang, Shailaja P. Rao, Takashi Suzuki, Leo J. Schowalter
  • DIAMETER EXPANSION OF ALUMINUM NITRIDE CRYSTALS DURING GROWTH BY PHYSICAL VAPOR TRANSPORT
    Publication number: 20210047749
    Abstract: In various embodiments, aluminum nitride single crystals are rapidly diameter-expanded during growth by physical vapor transport. High rates of diameter expansion during growth may be enabled by the use of internal thermal shields and directed plasma-modification of the growth environment to augment radial thermal gradients and increase radial growth rates.
    Type: Application
    Filed: August 12, 2020
    Publication date: February 18, 2021
    Inventors: Robert T. BONDOKOV, Thomas MIEBACH, Jianfeng CHEN, Takashi SUZUKI, Leo J. SCHOWALTER
  • ALUMINUM NITRIDE SINGLE CRYSTALS HAVING LARGE CRYSTAL AUGMENTATION PARAMETERS
    Publication number: 20210047751
    Abstract: In various embodiments, aluminum nitride single crystals have large crystal augmentation parameters and may therefore be suitable for the fabrication of numerous, large single-crystal aluminum nitride substrates having high crystalline quality. The aluminum nitride single crystals may have large boule masses and volumes.
    Type: Application
    Filed: August 12, 2020
    Publication date: February 18, 2021
    Inventors: Robert T. BONDOKOV, Thomas MIEBACH, Jianfeng CHEN, Takashi SUZUKI, Leo J. SCHOWALTER
  • Thermal control for formation and processing of aluminum nitride
    Patent number: 10851474
    Abstract: In various embodiments, controlled heating and/or cooling conditions are utilized during the fabrication of aluminum nitride single crystals and aluminum nitride bulk polycrystalline ceramics. Thermal treatments may also be utilized to control properties of aluminum nitride crystals after fabrication.
    Type: Grant
    Filed: December 16, 2019
    Date of Patent: December 1, 2020
    Assignee: CRYSTAL IS, INC.
    Inventors: Robert T. Bondokov, Jianfeng Chen, Keisuke Yamaoka, Shichao Wang, Shailaja P. Rao, Takashi Suzuki, Leo J. Schowalter
  • DEFECT REDUCTION IN SEEDED ALUMINUM NITRIDE CRYSTAL GROWTH
    Publication number: 20200354852
    Abstract: Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density ?100 cm?2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.
    Type: Application
    Filed: May 22, 2020
    Publication date: November 12, 2020
    Inventors: Robert T. Bondokov, Kenneth E. Morgan, Leo J. Schowalter, Glen A. Slack