Patents by Inventor Robert T. Bondokov

Robert T. Bondokov has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9970127
    Abstract: Bulk single crystals of AlN having a diameter greater than about 25 mm and dislocation densities of about 10,000 cm?2 or less and high-quality AlN substrates having surfaces of any desired crystallographic orientation fabricated from these bulk crystals.
    Type: Grant
    Filed: August 8, 2016
    Date of Patent: May 15, 2018
    Assignee: CRYSTAL IS, INC.
    Inventors: Leo Schowalter, Glen A. Slack, Juan Carlos Rojo, Robert T. Bondokov, Kenneth E. Morgan, Joseph A. Smart
  • Publication number: 20170350036
    Abstract: Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density?100 cm?2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.
    Type: Application
    Filed: August 24, 2017
    Publication date: December 7, 2017
    Inventors: Robert T. Bondokov, Leo J. Schowalter, Kenneth Morgan, Glen A. Slack, Shailaja P. Rao, Shawn Robert Gibb
  • Patent number: 9771666
    Abstract: Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density?100 cm?2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.
    Type: Grant
    Filed: April 13, 2015
    Date of Patent: September 26, 2017
    Assignee: CRYSTAL IS, INC.
    Inventors: Robert T. Bondokov, Leo J. Schowalter, Kenneth Morgan, Glen A. Slack, Shailaja P. Rao, Shawn Robert Gibb
  • Publication number: 20170226661
    Abstract: In various embodiments, non-zero thermal gradients are formed within a growth chamber both substantially parallel and substantially perpendicular to the growth direction during formation of semiconductor crystals, where the ratio of the two thermal gradients (parallel to perpendicular) is less than 10, by, e.g., arrangement of thermal shields outside of the growth chamber.
    Type: Application
    Filed: January 20, 2017
    Publication date: August 10, 2017
    Inventors: Robert T. BONDOKOV, Shailaja P. RAO, Shawn Robert GIBB, Leo J. SCHOWALTER
  • Publication number: 20170191184
    Abstract: Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density?100 cm?2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.
    Type: Application
    Filed: March 20, 2017
    Publication date: July 6, 2017
    Inventors: Robert T. Bondokov, Kenneth E. Morgan, Leo J. Schowalter, Glen A. Slack
  • Publication number: 20170159207
    Abstract: Bulk single crystals of AlN having a diameter greater than about 25 mm and dislocation densities of about 10,000 cm?2 or less and high-quality AlN substrates having surfaces of any desired crystallographic orientation fabricated from these bulk crystals.
    Type: Application
    Filed: August 8, 2016
    Publication date: June 8, 2017
    Inventors: Leo Schowalter, Glen A. Slack, Juan Carlos Rojo, Robert T. Bondokov, Kenneth E. Morgan, Joseph A. Smart
  • Patent number: 9670591
    Abstract: Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density ?100 cm?2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.
    Type: Grant
    Filed: August 13, 2014
    Date of Patent: June 6, 2017
    Assignee: CRYSTAL IS, INC.
    Inventors: Robert T. Bondokov, Kenneth E. Morgan, Leo J. Schowalter, Glen A. Slack
  • Patent number: 9624601
    Abstract: Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density?100 cm?2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.
    Type: Grant
    Filed: August 13, 2014
    Date of Patent: April 18, 2017
    Assignee: CRYSTAL IS, INC.
    Inventors: Robert T. Bondokov, Kenneth E. Morgan, Leo J. Schowalter, Glen A. Stack
  • Patent number: 9580833
    Abstract: In various embodiments, non-zero thermal gradients are formed within a growth chamber both substantially parallel and substantially perpendicular to the growth direction during formation of semiconductor crystals, where the ratio of the two thermal gradients (parallel to perpendicular) is less than 10, by, e.g., arrangement of thermal shields outside of the growth chamber.
    Type: Grant
    Filed: April 15, 2015
    Date of Patent: February 28, 2017
    Assignee: CRYSTAL IS, INC.
    Inventors: Robert T. Bondokov, Shailaja P. Rao, Shawn R. Gibb, Leo J. Schowalter
  • Publication number: 20160348273
    Abstract: In various embodiments, methods of forming single-crystal AN include providing a substantially undoped polycrystalline AN ceramic having an oxygen concentration less than approximately 100 ppm, forming a single-crystal bulk AN crystal by a sublimation-recondensation process at a temperature greater than approximately 2000 ° C., and cooling the bulk AN crystal to a first temperature between approximately 1500 ° C. and approximately 1800 ° C. at a first rate less than approximately 250 ° C./hour.
    Type: Application
    Filed: August 15, 2016
    Publication date: December 1, 2016
    Inventors: Sandra B. Schujman, Shailaja P. Rao, Robert T. Bondokov, Kenneth E. Morgan, Glen A. Slack, Leo J. Schowalter
  • Patent number: 9447521
    Abstract: Bulk single crystals of AlN having a diameter greater than about 25 mm and dislocation densities of about 10,000 cm?2 or less and high-quality AlN substrates having surfaces of any desired crystallographic orientation fabricated from these bulk crystals.
    Type: Grant
    Filed: October 22, 2014
    Date of Patent: September 20, 2016
    Assignee: Crystal IS, Inc.
    Inventors: Leo Schowalter, Glen A. Slack, Juan Carlos Rojo, Robert T. Bondokov, Kenneth E. Morgan, Joseph A. Smart
  • Patent number: 9447519
    Abstract: In various embodiments, methods of forming single-crystal AlN include providing a substantially undoped polycrystalline AlN ceramic having an oxygen concentration less than approximately 100 ppm, forming a single-crystal bulk AlN crystal by a sublimation-recondensation process at a temperature greater than approximately 2000° C., and cooling the bulk AlN crystal to a first temperature between approximately 1500° C. and approximately 1800° C. at a first rate less than approximately 250° C./hour.
    Type: Grant
    Filed: April 16, 2015
    Date of Patent: September 20, 2016
    Assignee: Crystal IS, Inc.
    Inventors: Sandra B. Schujman, Shailaja P. Rao, Robert T. Bondokov, Kenneth E. Morgan, Glen A. Slack, Leo J. Schowalter
  • Publication number: 20150275393
    Abstract: Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density?100 cm?2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.
    Type: Application
    Filed: April 13, 2015
    Publication date: October 1, 2015
    Inventors: Robert T. Bondokov, Leo J. Schowalter, Kenneth Morgan, Glen A. Slack, Shailaja P. Rao, Shawn Robert Gibb
  • Publication number: 20150218729
    Abstract: In various embodiments, methods of forming single-crystal AlN include providing a substantially undoped polycrystalline AlN ceramic having an oxygen concentration less than approximately 100 ppm, forming a single-crystal bulk AlN crystal by a sublimation-recondensation process at a temperature greater than approximately 2000° C., and cooling the bulk AlN crystal to a first temperature between approximately 1500° C. and approximately 1800° C. at a first rate less than approximately 250° C./hour.
    Type: Application
    Filed: April 16, 2015
    Publication date: August 6, 2015
    Inventors: Sandra B. Schujman, Shailaja P. Rao, Robert T. Bondokov, Kenneth E. Morgan, Glen A. Slack, Leo J. Schowalter
  • Publication number: 20150218728
    Abstract: In various embodiments, non-zero thermal gradients are formed within a growth chamber both substantially parallel and substantially perpendicular to the growth direction during formation of semiconductor crystals, where the ratio of the two thermal gradients (parallel to perpendicular) is less than 10, by, e.g., arrangement of thermal shields outside of the growth chamber.
    Type: Application
    Filed: April 15, 2015
    Publication date: August 6, 2015
    Inventors: Robert T. Bondokov, Shailaja P. Rao, Shawn R. Gibb, Leo J. Schowalter
  • Patent number: 9034103
    Abstract: In various embodiments, methods of forming single-crystal AlN include providing a substantially undoped polycrystalline AlN ceramic having an oxygen concentration less than approximately 100 ppm, forming a single-crystal bulk AlN crystal by a sublimation-recondensation process at a temperature greater than approximately 2000° C., and cooling the bulk AlN crystal to a first temperature between approximately 1500° C. and approximately 1800° C. at a first rate less than approximately 250° C./hour.
    Type: Grant
    Filed: June 30, 2010
    Date of Patent: May 19, 2015
    Assignee: CRYSTAL IS, INC.
    Inventors: Sandra B. Schujman, Shailaja P. Rao, Robert T. Bondokov, Kenneth E. Morgan, Glen A. Slack, Leo J. Schowalter
  • Patent number: 9028612
    Abstract: In various embodiments, non-zero thermal gradients are formed within a growth chamber both substantially parallel and substantially perpendicular to the growth direction during formation of semiconductor crystals, where the ratio of the two thermal gradients (parallel to perpendicular) is less than 10, by, e.g., arrangement of thermal shields outside of the growth chamber.
    Type: Grant
    Filed: June 30, 2011
    Date of Patent: May 12, 2015
    Assignee: Crystal IS, Inc.
    Inventors: Robert T. Bondokov, Shailaja P. Rao, Shawn Robert Gibb, Leo J. Schowalter
  • Publication number: 20150079329
    Abstract: Bulk single crystals of AlN having a diameter greater than about 25 mm and dislocation densities of about 10,000 cm?2 or less and high-quality AlN substrates having surfaces of any desired crystallographic orientation fabricated from these bulk crystals.
    Type: Application
    Filed: October 22, 2014
    Publication date: March 19, 2015
    Inventors: Leo Schowalter, Glen A. Slack, Juan Carlos Rojo, Robert T. Bondokov, Kenneth E. Morgan, Joseph A. Smart
  • Publication number: 20150020731
    Abstract: Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density?100 cm?2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.
    Type: Application
    Filed: August 13, 2014
    Publication date: January 22, 2015
    Inventors: Robert T. Bondokov, Kenneth E. Morgan, Leo J. Schowalter, Glen A. Stack
  • Publication number: 20150013592
    Abstract: Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density ?100 cm?2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.
    Type: Application
    Filed: August 13, 2014
    Publication date: January 15, 2015
    Inventors: Robert T. Bondokov, Kenneth E. Morgan, Leo J. Schowalter, Glen A. Slack