Abstract: The present disclosure generally relates to data storage devices comprising one or more memory packages. At least one memory package of the storage device comprises a first stack of memory dies coupled together by a first chip select line and a second stack of memory dies coupled together by a second chip select line. Both the first stack and the second stack comprise a plurality of non-volatile memory dies and a dissimilar memory die disposed on top of the plurality of non-volatile memory dies. Within both the first stack and the second stack, the plurality of non-volatile memory dies is a different type of memory than the dissimilar memory die. Additionally, within both the first stack and the second stack, the plurality of non-volatile memory dies is configured to store host data, and the dissimilar memory die is configured to store cached data.

Abstract: The present disclosure generally relates to data storage devices comprising one or more memory packages. At least one memory package of the storage device comprises a first stack of memory dies coupled together by a first chip select line and a second stack of memory dies coupled together by a second chip select line. Both the first stack and the second stack comprise a plurality of non-volatile memory dies and a dissimilar memory die disposed on top of the plurality of non-volatile memory dies. Within both the first stack and the second stack, the plurality of non-volatile memory dies is a different type of memory than the dissimilar memory die. Additionally, within both the first stack and the second stack, the plurality of non-volatile memory dies is configured to store host data, and the dissimilar memory die is configured to store cached data.

Abstract: The present disclosure discloses a memory device including a controller for bit reordering. The controller receives an input bit sequence including a plurality of bits with a first bit order. The controller identifies a physical location of a non-volatile memory element in the memory device and determines a correspondence between the first bit order and a second bit order based on the physical location. The controller generates an output bit sequence including the plurality of bits with the second bit order based on the correspondence.

Abstract: The present disclosure discloses a memory device including a controller for bit reordering. The controller receives an input bit sequence including a plurality of bits with a first bit order. The controller identifies a physical location of a non-volatile memory element in the memory device and determines a correspondence between the first bit order and a second bit order based on the physical location. The controller generates an output bit sequence including the plurality of bits with the second bit order based on the correspondence.

Abstract: A storage system, and a method of data management in the storage system, with non-volatile memory device characteristics determined during an inspection of non-volatile memory devices before a runtime operation of a storage device in the storage system including: a controller in the storage system: a drive-level control unit configured for an update of operational capabilities based on the non-volatile memory device characteristics during the runtime operation of the storage device and for a group of the non-volatile memory devices based on the operational capabilities; and a memory control unit, coupled to the drive-level control unit, the memory control unit configured to receive the operational capabilities for control of the non-volatile memory devices.

Abstract: In accordance with some implementations of this invention, an electronic assembly is formed with a thermal channel that controls an air flow for the purpose of dissipating heat generated in the electronic assembly. The electronic assembly includes a top board, a bottom board and a subassembly that further includes a rail, an airflow tab and an interconnect. The subassembly couples the top and bottom boards together. The rail has an opening through which air passes. The interconnect faces the airflow tab, carries electrical signals between the top board and the bottom board, and is configured to channel air directed through the opening of the rail.

Abstract: The embodiments described herein are used to allocate memory in a storage system. The method includes, at a memory controller in the storage system, determining a current memory allocation for a set of memory devices, wherein the set of memory devices is formatted with a ratio of first storage density designated portions to second storage density designated portions in accordance with the current memory allocation. The method further includes detecting satisfaction of one or more memory reallocation trigger conditions. The method further includes, in response to detecting satisfaction of one or more memory reallocation trigger conditions, modifying the ratio of the first storage density designated portions to the second storage density designated portions in the set of memory devices to generate a second memory allocation for the set of memory devices.

Abstract: A memory controller configures a plurality of word lines associated with a respective block of a 3D memory device in a first configuration, where the first configuration includes a set of configuration parameters for each word line of the plurality of word lines determined at least in part on the vertical positions of each word line relative to a substrate of the 3D memory device and, while the plurality of word lines are configured in the first configuration, writes data to and reads data from the respective block. For the respective block, the memory controller: adjusts a first parameter in the respective set of configuration parameters corresponding to a respective word line of the plurality of word lines in response to detecting a first trigger condition as to the respective word line and, after adjusting the first parameter, writes data to and reads data from the respective word line.

Abstract: An electronic assembly and method of manufacturing includes: an airflow bracket having a circular rail and an airflow tab, the airflow bracket electrically coupling the circular rail and the airflow tab; a top board attached to the circular rail for electrically coupling the top board and the circular rail; and a bottom board attached to the circular rail for electrically coupling the top board and the circular rail, the bottom board positioned to form a thermal channel between the top board and the bottom board for directing air through a vent opening of the circular rail.

Abstract: Systems, methods, and/or devices are used to automate read operations performed at an open erase block. In one aspect, the method includes: receiving a read command, at a storage device, to read data from non-volatile memory of the storage device. In response to receiving the read command, the method further includes: 1) reading data using a first set of memory operation parameters in response to a determination that the read command is not for reading data from a predefined portion of an open erase block (e.g., an erase block that is determined to be an open erase block) of the non-volatile memory and 2) reading data using a second set of memory operation parameters (i.e., the second set is distinct from the first set) in response to a determination that the read command is for reading data from the predefined portion of an open erase block of the non-volatile memory.

Abstract: Various embodiments described herein include systems, methods and/or devices used to dissipate heat generated by electronic components in an electronic system (e.g., a memory system including closely spaced memory modules). Specifically, a heat sink includes an attachment structure and a tab. The attachment structure defines a slot configured to receive an edge of a substrate and thermally couple to a ground plane of the substrate. The tab is located opposite to the slot, and is configured to slide into a card guide slot of an assembly rack, such that in use, heat generated by at least one electronic component on the substrate is at least partially transferred through the ground plane to the attachment structure to be dissipated.

Abstract: In a non-volatile memory system, a fast bulk secure erase method for erasing data includes, in response to a secure erase command: applying charge to a portion of non-volatile memory in the non-volatile memory system, and performing an erase operation sufficient to remove charge from the portion of non-volatile memory to below an erase threshold. The applied charge is sufficient to program memory cells in the portion of non-volatile memory to above a pre-erase program threshold.

Abstract: Systems, methods, and/or devices are used to manage high-priority NAND operations. In some embodiments, the method includes receiving a first command (e.g., requesting a high-priority memory operation) corresponding to a first location (e.g., having both a first physical address and a first aliased physical address) in a first die of a plurality of physical non-volatile memory die in a storage device. If the first die is performing a blocking low-priority memory operation (e.g., the low-priority operation was sent to the first die using a second physical address), the method includes sending a memory operation command, corresponding to the first memory operation, to the first die using the first aliased physical address. In some embodiments, a predefined die-selection portion of the second physical address matches the predefined die-selection portion of the first physical address and does not match the predefined die-selection portion of the first aliased physical address.

Abstract: A method of operation of a data storage system includes: monitoring a data interface bus, the monitoring by a non-volatile memory controller; activating a zero bit counter for detecting a ratio of 1's to 0's on the data interface bus; and adjusting a threshold voltage (Vth), based on the ratio of the 1's to the 0's from the zero bit counter, by the non-volatile memory controller.

Abstract: Systems and methods disclosed herein are used to efficiently manage low read data. In one aspect, a method includes, in response to detecting occurrence of a first event (e.g., PFail), writing low read data to non-volatile memory of a storage device with a fast SLC programming mode, distinct from a default SLC programming mode. Writing the low read data with the fast SLC programming mode: (i) includes using one or more memory programming parameters distinct from a default set of memory programming parameters used for writing data with the default SLC programming mode and (ii) takes less time per predefined unit of data than writing data with the default SLC programming mode. The method also includes: in response to detecting occurrence of a second event (e.g., host write command), writing data corresponding to the second event with the default SLC programming mode using the default set of memory programming parameters.

Abstract: The various embodiments described herein include systems, methods and/or devices used to enable firmware reversion triggering and control in a storage device. In one aspect, the method includes: (1) detecting a reversion trigger, the reversion trigger identifying a set of one or more controllers of a plurality of controllers on the storage device, and (2) in response to the reversion trigger, initiating recovery actions for each controller in the set of one or more controllers, including: for each controller in the set of one or more controllers: (a) asserting a revert signal to the controller to execute a firmware reversion for the controller, and (b) resetting the controller subsequent to asserting the revert signal to the controller.

Abstract: In a non-volatile memory system, a fast bulk secure erase method for erasing data includes, in response to a secure erase command: applying charge to a portion of non-volatile memory in the non-volatile memory system, and performing an erase operation sufficient to remove charge from the portion of non-volatile memory to below an erase threshold. The applied charge is sufficient to program memory cells in the portion of non-volatile memory to above a pre-erase program threshold.

Abstract: A method of operation of a storage control system includes: partitioning memory channels with memory devices; selecting a super device with one of the memory devices from one of the memory channels; selecting a super block associated with the super device; and determining a location of a parity within the super block when the super block is formed.

Abstract: The various embodiments described herein include methods and/or devices used to protect data in a storage device. In one aspect, a method includes performing a power fail operation on a first section of the storage device, the first section of the storage device comprising one or more memory group modules. The power fail operation includes supplying power, via one or more energy storage devices, to the one or more memory group modules, where each memory group module includes a respective memory group module controller. The power fail operation also includes supplying power, via an additional energy storage device, to a storage device controller, the storage device controller corresponding to the first section of the storage device. The additional energy storage device is distinct from the one or more energy storage devices and each are distinct from a power source used during normal operation of the storage device.

Abstract: Systems, methods and/or devices are used to enable dynamic erase block grouping. In one aspect, the method includes (1) maintaining metadata for each erase block of a plurality of erase blocks in a data storage system, wherein a respective metadata for a respective erase block includes one or more characteristics of the respective erase block, (2) allocating a set of erase blocks, of the plurality of erase blocks, as unassociated erase blocks, (3) selecting two or more unassociated erase blocks in accordance with characteristics of the unassociated erase blocks so as to select unassociated erase blocks with similar characteristics, and (4) grouping the two or more unassociated erase blocks with similar characteristics to form a super block.