Abstract: A holding fixture with five discrete vacuum elements provides support at four peripheral points on a substrate and at the substrate center. Two peripheral vacuum elements are fixed in position on a rigid frame. The remaining peripheral elements and the center element are fixed to a gimbal disc. This gimbal disc is mounted on the frame in such a way that it has three degrees of rotational movement relative to the frame. Downward pressure of a substrate resting on the two fixed elements, brings all three gimbal disc mounted supports into contact with the substrate, without allowing or causing deflection of the substrate. The mounting is locked, and vacuum is applied to all the elements to secure the substrate in place for the planarizing operation.

Abstract: Disclosed is a method of chem-mech polishing an article, preferably an electronic component substrate. The method includes the following steps;obtaining an article having at least two features thereon or therein which have a different etch rate with respect to a particular etchant; andcontacting the article with a polishing pad while contacting the substrate with a slurry containing the etchant wherein the slurry includes abrasive particles wherein the abrasive particles do not include alumina, a transition metal chelated salt, a solvent for the salt, and a small but effective amount of alumina.The chem-mech polishing causes the at least two features to be substantially coplanar. Also disclosed is the chem-mech polishing slurry.

Abstract: Disclosed is a method of chem-mech polishing an electronic component substrate. The method includes the following steps;obtaining a substrate having at least two features thereon or therein which have a different etch rate with respect to a particular etchant; andcontacting the substrate with a polishing pad while contacting the substrate with a slurry containing the etchant wherein the slurry includes abrasive particles, a transition metal chelated salt and a solvent for the salt.The chem-mech polishing causes the at least two features to be substantially coplanar. Also disclosed is the chem-mech polishing slurry.

Abstract: A thin film stripe that includes a conductive metal alloyed with at least one other element capable of chemically bonding with hydrogen and a compound formed by hydrogen chemically bonded with at least one other element in sufficient amounts to increase the stripe's resistance to electromigration failure at normal operating temperatures and pressures.

Abstract: A thin film conductive stripe having increased resistance to electromigration wherein a conductive element is alloyed with at least one other hydrogen storage element capable of accepting and holding hydrogen internally within the thin film stripe and the stripe is annealed in a hydrogen atmosphere to react hydrogen with the storage material to charge the stripe with hydrogen.

Abstract: A technique is described that permits direct and accurate evaluation of a thin film conductor's reliability which requires only a few hours to carry out. The technique involves a temperature ramp procedure which dynamically exposes a conductor operating under constant current stress to a linear (in time) rise in temperature. Changes in resistivity of the conductor provides kinetic data that is directly related to both the electromigration process and the reliability of the device.

Abstract: A technique is described that permits direct and accurate evaluation of a thin film conductor's reliability which requires only a few hours to carry out. The technique involves a temperature ramp procedure which dynamically exposes a conductor operating under constant current stress to a linear (in time) rise in temperature. Changes in resistivity of the conductor provides kinetic data that is directly related to both the electromigration process and the reliability of the device.