Abstract: Methods of applying specialty ceramic materials to semiconductor processing apparatus, where the specialty ceramic materials are resistant to halogen-comprising plasmas. The specialty ceramic materials contain at least one yttrium oxide-comprising solid solution. Some embodiments of the specialty ceramic materials have been modified to provide a resistivity which reduces the possibility of arcing within a semiconductor processing chamber.

Abstract: An oxide etching recipe including a heavy hydrogen-free fluorocarbon having F/C ratios less than 2, preferably C4F6, an oxygen-containing gas such as O2 or CO, a lighter fluorocarbon or hydrofluorocarbon, and a noble diluent gas such as Ar or Xe. The amounts of the first three gases are chosen such that the ratio (F—H)/(C—O) is at least 1.5 and no more than 2. Alternatively, the gas mixture may include the heavy fluorocarbon, carbon tetrafluoride, and the diluent with the ratio of the first two chosen such the ratio F/C is between 1.5 and 2.

Abstract: To further enhance the chamber material performance of anodized aluminum alloy materials against fluorine and oxygen plasma attack, a ceramic-based surface coating, high purity yttrium oxide coating, is provided on the anodized aluminum alloy parts.

Abstract: A complexly shaped Si/SiC cermet part including a protective coating deposited on a surface of the cermet part facing the plasma of the reactor. The cermet part is formed by casting a SiC green form and machining the shape into the green form. The green form is incompletely sintered such that it is unconsolidated and shrinks by less than 1% during sintering. Molten silicon is flowed into the voids of the unconsolidated sintered body. Chemical vapor deposition or plasma spraying coats onto the cermet structure a protective film of silicon carbide, boron carbide, diamond, or related carbon-based materials. The part may be configured for use in a plasma reactor, such as a chamber body, showerhead, focus ring, or chamber liner.

Abstract: A magnetic assembly for a plasma processing chamber includes an annular housing having a radially outward face and a radially inwardly facing opening, a cover plate to seal the radially inwardly facing opening, and a plurality of magnets in the annular housing. The magnets may be in preassembled modules that abut one another in a ring configuration within the annular housing. A plasma processing chamber using the magnetic assembly includes a substrate support that can fit in an inner radius of the magnetic assembly, a gas supply to maintain process gas at a pressure in the chamber, a gas energizer to energize the process gas, and an exhaust to exhaust the process gas.

Abstract: Apparatus for gas distribution in a semiconductor wafer processing chamber 200 having a roof 228. The roof 228 has a top surface 608 and a bottom surface 312. A recess 314 is disposed within the bottom surface 312 of the roof 228. A gas distribution plate 316 is disposed within the recess 314 and a material layer coating 320 is disposed upon the bottom surfaces 312/500 of the roof 228 and the gas distribution plate 316. The material layer coating 320 and the gas distribution plate 316 each have a plurality of apertures 322/404. The apertures 404 of the gas distribution plate 316 coincide with the apertures 322 in the material layer coating 320. The material layer coating 320 is formed from silicon carbide and most preferably is deposited by chemical vapor deposition (CVD). Both the roof 228 and gas distribution plate 316 are fabricated from silicon carbide.

Abstract: An oxide etching recipe including a heavy hydrogen-free fluorocarbon having F/C ratios less than 2, preferably C4F6, an oxygen-containing gas such as O2 or CO, a lighter fluorocarbon or hydrofluorocarbon, and a noble diluent gas such as Ar or Xe. The amounts of the first three gases are chosen such that the ratio (F—H)/(C—O) is at least 1.5 and no more than 2. Alternatively, the gas mixture may include the heavy fluorocarbon, carbon tetrafluoride, and the diluent with the ratio of the first two chosen such the ratio F/C is between 1.5 and 2.

Abstract: A method of adjusting the cathode DC bias in a plasma chamber for fabricating semiconductor devices. A dielectric shield is positioned between the plasma and a selected portion of the electrically grounded components of the chamber, such as the electrically grounded chamber wall. The cathode DC bias is adjusted by controlling one or more of the following parameters: (1) the surface area of the chamber wall or other grounded components which is blocked by the dielectric shield; (2) the thickness of the dielectric; (3) the gap between the shield and the chamber wall; and (4) the dielectric constant of the dielectric material. In an apparatus aspect, the invention is a plasma chamber for fabricating semiconductor devices having an exhaust baffle with a number of sinuous passages. Each passage is sufficiently long and sinuous that no portion of the plasma within the chamber can extend beyond the outlet of the passage.

Abstract: An oxide etching recipe including a heavy hydrogen-free fluorocarbon having F/C ratios less than 2 such as C4F6 or C5F8, an oxygen-containing gas such as O2, CO or CO2, a lighter fluorocarbon or hydrofluorocarbon, and a noble diluent gas such as Ar or Xe. The amounts of the first three gases are chosen such that the ratio (F—H)/(C—O) is at least 1.5 and no more than 2. Alternatively, the gas mixture may include the heavy fluorocarbon, carbon tetrafluoride, and the diluent with the ratio of the first two chosen such the ratio F/C is between 1.5 and 2.

Abstract: The present disclosure pertains to an integrated post-etch treatment method which is performed after a dielectric etch process. Using the method of the invention, byproducts formed on the sidewalls of contact vias during the dielectric etch process can be removed efficiently. The method of the invention also reduces or eliminates the problem of polymer accumulation on process chamber surfaces. An overlying photoresist layer and anti-reflection layer are removed during the performance of the post-etch treatment method. Typically, after the etch of a dielectric material to define pattern or interconnect filling spaces, a series of post-etch treatment steps is performed to remove residues remaining on the wafer after the dielectric etch process. According to the method of the present invention, a post-etch treatment method including one or more steps is performed after the dielectric etch process, preferably within the same processing chamber in which the dielectric etch process was performed.

Abstract: A plasma etch process, particularly applicable to an self-aligned contact etch in a high-density plasma for selectively etching oxide over nitride, although selectivity to silicon is also achieved. In the process, a fluoropropane or a fluoropropylene is a principal etching gas in the presence of a substantial amount of an inactive gas such as argon. Good nitride selectivity has been achieved with hexafluoropropylene (C3F6), octafluoropropane (C3F8), heptafluoropropane (C3HF7), hexafluoropropane (C3H2F6). The process may use one or more of the these gases in proportions to optimize selectivity and a wide process window. Difluoromethane (CH2F2) or other fluorocarbons may be combined with the above gases, particularly with C3F6 for optimum selectivity over other materials without the occurrence of etch stop in narrow contact holes and with a wide process window.

Abstract: A plasma reactor appropriate for fabrication, especially etching, of semiconductor integrated circuits and similar processes in which the chamber has a top comprising a truncated conical dome and, preferably, a counter electrode disposed at the top of the conical dome. An RF coil is wrapped around the conical dome to inductively couple RF energy into a plasma within the chamber dome. The dome temperature can be controlled in a number of ways. A heat sink can be attached to the outside rim of the dome. A rigid conical thermal control sheath can be fit to the outside of the dome, and any differential thermal expansion between the two is accommodated by the conical geometry, thus assuring good thermal contact. The rigid thermal control sheath can include resistive heating, fluid cooling, or both. Alternatively, a flexible resistive heater can be wrapped around the dome inside the RF coil.

Abstract: A method of adjusting the cathode DC bias in a plasma chamber for fabricating semiconductor devices. A dielectric shield is positioned between the plasma and a selected portion of the electrically grounded components of the chamber, such as the electrically grounded chamber wall. The cathode DC bias is adjusted by controlling one or more of the following parameters: (1) the surface area of the chamber wall or other grounded components which is blocked by the dielectric shield; (2) the thickness of the dielectric; (3) the gap between the shield and the chamber wall; and (4) the dielectric constant of the dielectric material. In an apparatus aspect, the invention is a plasma chamber for fabricating semiconductor devices having an exhaust baffle with a number of sinuous passages. Each passage is sufficiently long and sinuous that no portion of the plasma within the chamber can extend beyond the outlet of the passage.

Abstract: A method of adjusting the cathode DC bias in a plasma chamber for fabricating semiconductor devices. A dielectric shield is positioned between the plasma and a selected portion of the electrically grounded components of the chamber, such as the electrically grounded chamber wall. The cathode DC bias is adjusted by controlling one or more of the following parameters: (1) the surface area of the chamber wall or other grounded components which is blocked by the dielectric shield; (2) the thickness of the dielectric; (3) the gap between the shield and the chamber wall; and (4) the dielectric constant of the dielectric material. In an apparatus aspect, the invention is a plasma chamber for fabricating semiconductor devices having an exhaust baffle with a number of sinuous passages. Each passage is sufficiently long and sinuous that no portion of the plasma within the chamber can extend beyond the outlet of the passage.

Abstract: A plasma etch process, particularly applicable to a self-aligned contact etch or other advanced structures requiring high-selectivity to nitride or other non-oxide materials and producing no etch stop. The process is preferably performed in a high-density plasma reactor for etching holes with either high or low aspect rations. In this process, hexafluoropropylene (C3F6) is the principal etching gas and another hydrofluorocarbon such as CH2F2 or C3H2F6 is added at least in part for its polymer-forming ability, which increases selectivity of etching oxide to nitride. The process gas also includes a substantial amount of an inactive gas such as argon. The process gas mixture can be balanced between the active etching gas and the polymer former in proportions to optimize selectivity over other materials without the occurrence of etch stop in narrow contact holes and with a wide process window.

Abstract: A plasma etch process, particularly applicable to a self-aligned contact etch or other advanced structures requiring high-selectivity to nitride or other non-oxide materials and no etch stop. The process is preferably performed in a high-density plasma reactor for etching holes with either high or low aspect rations. In this process, hexafluoropropane (C.sub.3 H.sub.2 F.sub.6) is the principal etching gas in the presence of a substantial amount of an inactive gas such as argon. The process can also be used with the closely related gases heptafluoropropane (C.sub.3 HF.sub.7) and pentafluoropropane (C.sub.3 H.sub.3 F.sub.5). The process may use one or more of the these gases in proportions to optimize selectivity over other materials without the occurrence of etch stop in narrow contact holes and with a wide process window. Difluoromethane (CH.sub.2 F.sub.2) or other fluorocarbons may be combined with the above gases for optimum selectivity for a design of a specific contact feature.

Abstract: A plasma etch reactor having independent gas feeds above the wafer and either at the sides or below the wafer. Preferably, a carrier gas such as argon is supplied from a showerhead electrode above the wafer while an etching gas is supplied from below. In the case of selectively etching an oxide over a non-oxide layer, the etchant gas should include one or more fluorocarbons.

Abstract: A puncture resistant electrostatic chuck (20) is described. The chuck (20) comprises at least one electrode (25); and a composite insulator (30) covering the electrode. The composite insulator comprises a matrix material having a conformal holding surface (50) capable of conforming to the substrate (35) under application of an electrostatic force generated by the electrode to reduce leakage of heat transfer fluid held between the substrate and the holding surface. A hard puncture resistant layer, such a layer of fibers or an aromatic polyamide layer, is positioned below the holding surface (50) and is sufficiently hard to increase the puncture resistance of the composite insulator.

Abstract: A low-temperature process for selectively etching oxide with high selectivity over silicon in a high-density plasma reactor. The principal etching gas is a hydrogen-free fluorocarbon, such as C.sub.2 F.sub.6 or C.sub.4 F.sub.8, to which is added a silane or similar silicon-bearing gas, e.g., the monosilane SiH.sub.4. The fluorocarbon and silane are added in a ratio within the range of 2 to 5, preferably 2.5 to 3. The process provides high polysilicon selectivity, high photoresist facet selectivity, and steep profile angles. Selectivity is enhanced by operating at high flow rates. Silicon tetrafluoride may be added to enhance the oxide etching rate. The process may operate at temperatures of chamber parts below 180.degree. C. and even down to 120.degree. C. The process enables the fabrication of a bi-level contact structure with a wide process window.

Abstract: A plasma reactor, for example, for processing a semiconductor wafer, in which parts of the chamber are formed of multiple pieces of silicon carbide that have been bonded together. The bonding may be performed by diffusion bonding or by using a bonding agent such as polyimide. These silicon carbide parts typically face and define a plasma region. Preferably, the surface facing the plasma is coated with a silicon carbide film, such as that deposited by chemical vapor deposition, which is more resistant to erosion by the plasma. Advantageously, the different parts are formed with different electrical resistivities consistent with forming an advantageous plasma.