Patents by Inventor Robert W. Wu

Robert W. Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10655386
    Abstract: A motorized window treatment for controlling the amount of daylight entering a space through a window includes a covering material, a drive shaft, and a motor coupled to the drive shaft for raising and lowering the covering material. The window treatment also includes a spring assist unit for assisting the motor by providing a torque that equals the torque provided by the weight on the cords that lift the covering material at a position midway between fully-open and fully-closed positions to minimize motor usage and conserve battery life. The window treatment may comprise a photosensor for measuring the amount of daylight outside the window and temperature sensors for measuring the temperatures inside and outside of the window. The position of the covering material may be automatically controlled in response to the photosensor and the temperature sensors, or in response to an infrared or radio-frequency remote control.
    Type: Grant
    Filed: May 26, 2017
    Date of Patent: May 19, 2020
    Assignee: Lutron Technology Company LLC
    Inventors: Jason O. Adams, Edward J. Blair, Andrew Karl Cooney, Soumya Jain, David A. Kirby, Stephen Lundy, Justin J. Mierta, Daniel W. Mistarz, Robert C. Newman, Jr., Peter W. Ogden, Jr., Jonathan L. Roe, Chen Ming Wu, Justin M. Zernhelt
  • Patent number: 10494864
    Abstract: A motorized window treatment may provide a low-cost solution for controlling the amount of daylight entering a space through a window. The window treatment may include a covering material (e.g., a cellular shade fabric or a roller shade fabric), a drive assembly for raising and lowering the covering material, and a motor drive unit including a motor configured to drive the drive assembly to raise and lower the covering material. The motorized window treatment may comprise one or more battery packs configured to receive batteries for powering the motor drive unit. The batteries may be located out of view of a user of the motorized window treatment (e.g., in a headrail or in a battery compartment). The motorized window treatment may use various power-saving methods to lengthen the lifetime of the batteries, e.g., to reduce the motor speed to conserve additional battery power and extend the lifetime of the batteries.
    Type: Grant
    Filed: May 26, 2017
    Date of Patent: December 3, 2019
    Assignee: Lutron Technology Company LLC
    Inventors: Jason O. Adams, Edward J. Blair, Andrew Karl Cooney, Soumya Jain, David A. Kirby, Stephen Lundy, Justin J. Mierta, Daniel W. Mistarz, Robert C. Newman, Jr., Peter W. Ogden, Jr., Jonathan L. Roe, Chen Ming Wu, Justin M. Zernhelt, Samuel F. Chambers
  • Publication number: 20080213496
    Abstract: Methods of applying specialty ceramic materials to semiconductor processing apparatus, where the specialty ceramic materials are resistant to halogen-comprising plasmas. The specialty ceramic materials contain at least one yttrium oxide-comprising solid solution. Some embodiments of the specialty ceramic materials have been modified to provide a resistivity which reduces the possibility of arcing within a semiconductor processing chamber.
    Type: Application
    Filed: August 2, 2007
    Publication date: September 4, 2008
    Inventors: Jennifer Y. Sun, Shun Jackson Wu, Senh Thach, Ananda Kumar, Robert W. Wu, Hong Wang, Yixing Lin, Clifford C. Stow, Jim Dempster, Li Xu, Kenneth S. Collins, Ren-Guan Duan, Thomas Graves, Xiaoming He, Jie Yuan
  • Patent number: 6800213
    Abstract: An oxide etching recipe including a heavy hydrogen-free fluorocarbon having F/C ratios less than 2, preferably C4F6, an oxygen-containing gas such as O2 or CO, a lighter fluorocarbon or hydrofluorocarbon, and a noble diluent gas such as Ar or Xe. The amounts of the first three gases are chosen such that the ratio (F—H)/(C—O) is at least 1.5 and no more than 2. Alternatively, the gas mixture may include the heavy fluorocarbon, carbon tetrafluoride, and the diluent with the ratio of the first two chosen such the ratio F/C is between 1.5 and 2.
    Type: Grant
    Filed: June 7, 2002
    Date of Patent: October 5, 2004
    Inventors: Ji Ding, Hidehiro Kojiri, Yoshio Ishikawa, Keiji Horioka, Ruiping Wang, Robert W. Wu, Hoiman (Raymond) Hung
  • Patent number: 6776873
    Abstract: To further enhance the chamber material performance of anodized aluminum alloy materials against fluorine and oxygen plasma attack, a ceramic-based surface coating, high purity yttrium oxide coating, is provided on the anodized aluminum alloy parts.
    Type: Grant
    Filed: February 14, 2002
    Date of Patent: August 17, 2004
    Inventors: Jennifer Y Sun, Shun Jackson Wu, Senh Thach, Ananda H Kumar, Robert W Wu, Hong Wang, Yixing Lin, Clifford C Stow
  • Publication number: 20030198749
    Abstract: A complexly shaped Si/SiC cermet part including a protective coating deposited on a surface of the cermet part facing the plasma of the reactor. The cermet part is formed by casting a SiC green form and machining the shape into the green form. The green form is incompletely sintered such that it is unconsolidated and shrinks by less than 1% during sintering. Molten silicon is flowed into the voids of the unconsolidated sintered body. Chemical vapor deposition or plasma spraying coats onto the cermet structure a protective film of silicon carbide, boron carbide, diamond, or related carbon-based materials. The part may be configured for use in a plasma reactor, such as a chamber body, showerhead, focus ring, or chamber liner.
    Type: Application
    Filed: April 17, 2002
    Publication date: October 23, 2003
    Applicant: Applied Materials, Inc.
    Inventors: Ananda H. Kumar, Robert W. Wu, Gerald Zheyao Yin, Gabriel Bilek
  • Publication number: 20030192646
    Abstract: A magnetic assembly for a plasma processing chamber includes an annular housing having a radially outward face and a radially inwardly facing opening, a cover plate to seal the radially inwardly facing opening, and a plurality of magnets in the annular housing. The magnets may be in preassembled modules that abut one another in a ring configuration within the annular housing. A plasma processing chamber using the magnetic assembly includes a substrate support that can fit in an inner radius of the magnetic assembly, a gas supply to maintain process gas at a pressure in the chamber, a gas energizer to energize the process gas, and an exhaust to exhaust the process gas.
    Type: Application
    Filed: April 12, 2002
    Publication date: October 16, 2003
    Applicant: Applied Materials, Inc.
    Inventors: Robert W. Wu, Wing L. Cheng, You Wang, Senh Thach, Hamid Noorbakhsh, Kwok Manus Wong, Jennifer Y. Sun
  • Publication number: 20030037879
    Abstract: Apparatus for gas distribution in a semiconductor wafer processing chamber 200 having a roof 228. The roof 228 has a top surface 608 and a bottom surface 312. A recess 314 is disposed within the bottom surface 312 of the roof 228. A gas distribution plate 316 is disposed within the recess 314 and a material layer coating 320 is disposed upon the bottom surfaces 312/500 of the roof 228 and the gas distribution plate 316. The material layer coating 320 and the gas distribution plate 316 each have a plurality of apertures 322/404. The apertures 404 of the gas distribution plate 316 coincide with the apertures 322 in the material layer coating 320. The material layer coating 320 is formed from silicon carbide and most preferably is deposited by chemical vapor deposition (CVD). Both the roof 228 and gas distribution plate 316 are fabricated from silicon carbide.
    Type: Application
    Filed: August 24, 2001
    Publication date: February 27, 2003
    Applicant: Applied Materials, Inc.
    Inventors: Farahmand E. Askarinam, Robert W. Wu, Jeremiah T. Pender, Gerardo A. Delgadino, Hoiman Hung, Ananda H. Kumar, Olga Regelman, Douglas A. Buchberger
  • Publication number: 20030036287
    Abstract: An oxide etching recipe including a heavy hydrogen-free fluorocarbon having F/C ratios less than 2, preferably C4F6, an oxygen-containing gas such as O2 or CO, a lighter fluorocarbon or hydrofluorocarbon, and a noble diluent gas such as Ar or Xe. The amounts of the first three gases are chosen such that the ratio (F—H)/(C—O) is at least 1.5 and no more than 2. Alternatively, the gas mixture may include the heavy fluorocarbon, carbon tetrafluoride, and the diluent with the ratio of the first two chosen such the ratio F/C is between 1.5 and 2.
    Type: Application
    Filed: June 7, 2002
    Publication date: February 20, 2003
    Inventors: Ji Ding, Hidehiro Kojiri, Yoshio Ishikawa, Keiji Horioka, Ruiping Wang, Robert W. Wu, Hoiman Raymond Hung
  • Patent number: 6513452
    Abstract: A method of adjusting the cathode DC bias in a plasma chamber for fabricating semiconductor devices. A dielectric shield is positioned between the plasma and a selected portion of the electrically grounded components of the chamber, such as the electrically grounded chamber wall. The cathode DC bias is adjusted by controlling one or more of the following parameters: (1) the surface area of the chamber wall or other grounded components which is blocked by the dielectric shield; (2) the thickness of the dielectric; (3) the gap between the shield and the chamber wall; and (4) the dielectric constant of the dielectric material. In an apparatus aspect, the invention is a plasma chamber for fabricating semiconductor devices having an exhaust baffle with a number of sinuous passages. Each passage is sufficiently long and sinuous that no portion of the plasma within the chamber can extend beyond the outlet of the passage.
    Type: Grant
    Filed: April 24, 2001
    Date of Patent: February 4, 2003
    Assignee: Applied Materials Inc.
    Inventors: Hongching Shan, Evans Y. Lee, Michael D. Welch, Robert W. Wu, Bryan Y. Pu, Paul E. Luscher, James D. Carducci, Richard Blume
  • Patent number: 6432318
    Abstract: An oxide etching recipe including a heavy hydrogen-free fluorocarbon having F/C ratios less than 2 such as C4F6 or C5F8, an oxygen-containing gas such as O2, CO or CO2, a lighter fluorocarbon or hydrofluorocarbon, and a noble diluent gas such as Ar or Xe. The amounts of the first three gases are chosen such that the ratio (F—H)/(C—O) is at least 1.5 and no more than 2. Alternatively, the gas mixture may include the heavy fluorocarbon, carbon tetrafluoride, and the diluent with the ratio of the first two chosen such the ratio F/C is between 1.5 and 2.
    Type: Grant
    Filed: February 17, 2000
    Date of Patent: August 13, 2002
    Assignee: Applied Materials, Inc.
    Inventors: Ji Ding, Hidehiro Kojiri, Yoshio Ishikawa, Keiji Horioka, Ruiping Wang, Robert W. Wu, Hoiman Hung
  • Patent number: 6379574
    Abstract: The present disclosure pertains to an integrated post-etch treatment method which is performed after a dielectric etch process. Using the method of the invention, byproducts formed on the sidewalls of contact vias during the dielectric etch process can be removed efficiently. The method of the invention also reduces or eliminates the problem of polymer accumulation on process chamber surfaces. An overlying photoresist layer and anti-reflection layer are removed during the performance of the post-etch treatment method. Typically, after the etch of a dielectric material to define pattern or interconnect filling spaces, a series of post-etch treatment steps is performed to remove residues remaining on the wafer after the dielectric etch process. According to the method of the present invention, a post-etch treatment method including one or more steps is performed after the dielectric etch process, preferably within the same processing chamber in which the dielectric etch process was performed.
    Type: Grant
    Filed: May 26, 1999
    Date of Patent: April 30, 2002
    Assignee: Applied Materials, Inc.
    Inventors: Hui Ou-Yang, Chih-Ping Yang, Lin Ye, Robert W. Wu, Chih-Pang Chen, You-Neng Cheng, Yang Chan-Lon, Tong-Yu Chen
  • Patent number: 6361705
    Abstract: A plasma etch process, particularly applicable to an self-aligned contact etch in a high-density plasma for selectively etching oxide over nitride, although selectivity to silicon is also achieved. In the process, a fluoropropane or a fluoropropylene is a principal etching gas in the presence of a substantial amount of an inactive gas such as argon. Good nitride selectivity has been achieved with hexafluoropropylene (C3F6), octafluoropropane (C3F8), heptafluoropropane (C3HF7), hexafluoropropane (C3H2F6). The process may use one or more of the these gases in proportions to optimize selectivity and a wide process window. Difluoromethane (CH2F2) or other fluorocarbons may be combined with the above gases, particularly with C3F6 for optimum selectivity over other materials without the occurrence of etch stop in narrow contact holes and with a wide process window.
    Type: Grant
    Filed: March 1, 1999
    Date of Patent: March 26, 2002
    Assignee: Applied Materials, Inc.
    Inventors: Ruiping Wang, Gerald Z. Yin, Hao A. Lu, Robert W. Wu, Jian Ding
  • Patent number: 6308654
    Abstract: A plasma reactor appropriate for fabrication, especially etching, of semiconductor integrated circuits and similar processes in which the chamber has a top comprising a truncated conical dome and, preferably, a counter electrode disposed at the top of the conical dome. An RF coil is wrapped around the conical dome to inductively couple RF energy into a plasma within the chamber dome. The dome temperature can be controlled in a number of ways. A heat sink can be attached to the outside rim of the dome. A rigid conical thermal control sheath can be fit to the outside of the dome, and any differential thermal expansion between the two is accommodated by the conical geometry, thus assuring good thermal contact. The rigid thermal control sheath can include resistive heating, fluid cooling, or both. Alternatively, a flexible resistive heater can be wrapped around the dome inside the RF coil.
    Type: Grant
    Filed: October 18, 1996
    Date of Patent: October 30, 2001
    Assignee: Applied Materials, Inc.
    Inventors: Gerhard Schneider, Viktor Shel, Andrew Nguyen, Robert W. Wu, Gerald Z. Yin
  • Publication number: 20010014540
    Abstract: A method of adjusting the cathode DC bias in a plasma chamber for fabricating semiconductor devices. A dielectric shield is positioned between the plasma and a selected portion of the electrically grounded components of the chamber, such as the electrically grounded chamber wall. The cathode DC bias is adjusted by controlling one or more of the following parameters: (1) the surface area of the chamber wall or other grounded components which is blocked by the dielectric shield; (2) the thickness of the dielectric; (3) the gap between the shield and the chamber wall; and (4) the dielectric constant of the dielectric material. In an apparatus aspect, the invention is a plasma chamber for fabricating semiconductor devices having an exhaust baffle with a number of sinuous passages. Each passage is sufficiently long and sinuous that no portion of the plasma within the chamber can extend beyond the outlet of the passage.
    Type: Application
    Filed: April 24, 2001
    Publication date: August 16, 2001
    Applicant: Applied Materials, Inc.
    Inventors: Hongching Shan, Evans Y. Lee, Michael D. Welch, Robert W. Wu, Bryan Y. Pu, Paul E. Luscher, James D. Carducci, Richard Blume
  • Patent number: 6221782
    Abstract: A method of adjusting the cathode DC bias in a plasma chamber for fabricating semiconductor devices. A dielectric shield is positioned between the plasma and a selected portion of the electrically grounded components of the chamber, such as the electrically grounded chamber wall. The cathode DC bias is adjusted by controlling one or more of the following parameters: (1) the surface area of the chamber wall or other grounded components which is blocked by the dielectric shield; (2) the thickness of the dielectric; (3) the gap between the shield and the chamber wall; and (4) the dielectric constant of the dielectric material. In an apparatus aspect, the invention is a plasma chamber for fabricating semiconductor devices having an exhaust baffle with a number of sinuous passages. Each passage is sufficiently long and sinuous that no portion of the plasma within the chamber can extend beyond the outlet of the passage.
    Type: Grant
    Filed: April 6, 1999
    Date of Patent: April 24, 2001
    Assignee: Applied Materials, Inc.
    Inventors: Hongching Shan, Evans Y. Lee, Michael D. Welch, Robert W. Wu, Bryan Y. Pu, Paul E. Luscher, James D. Carducci, Richard Blume
  • Patent number: 6183655
    Abstract: A plasma etch process, particularly applicable to a self-aligned contact etch or other advanced structures requiring high-selectivity to nitride or other non-oxide materials and producing no etch stop. The process is preferably performed in a high-density plasma reactor for etching holes with either high or low aspect rations. In this process, hexafluoropropylene (C3F6) is the principal etching gas and another hydrofluorocarbon such as CH2F2 or C3H2F6 is added at least in part for its polymer-forming ability, which increases selectivity of etching oxide to nitride. The process gas also includes a substantial amount of an inactive gas such as argon. The process gas mixture can be balanced between the active etching gas and the polymer former in proportions to optimize selectivity over other materials without the occurrence of etch stop in narrow contact holes and with a wide process window.
    Type: Grant
    Filed: March 27, 1998
    Date of Patent: February 6, 2001
    Assignee: Applied Materials, Inc.
    Inventors: Ruiping Wang, Gerald Z. Yin, Robert W. Wu, Jian Ding
  • Patent number: 6074959
    Abstract: A plasma etch process, particularly applicable to a self-aligned contact etch or other advanced structures requiring high-selectivity to nitride or other non-oxide materials and no etch stop. The process is preferably performed in a high-density plasma reactor for etching holes with either high or low aspect rations. In this process, hexafluoropropane (C.sub.3 H.sub.2 F.sub.6) is the principal etching gas in the presence of a substantial amount of an inactive gas such as argon. The process can also be used with the closely related gases heptafluoropropane (C.sub.3 HF.sub.7) and pentafluoropropane (C.sub.3 H.sub.3 F.sub.5). The process may use one or more of the these gases in proportions to optimize selectivity over other materials without the occurrence of etch stop in narrow contact holes and with a wide process window. Difluoromethane (CH.sub.2 F.sub.2) or other fluorocarbons may be combined with the above gases for optimum selectivity for a design of a specific contact feature.
    Type: Grant
    Filed: November 5, 1997
    Date of Patent: June 13, 2000
    Assignee: Applied Materials, Inc.
    Inventors: Ruiping Wang, Gerald Z. Yin, Robert W. Wu, Jian Ding
  • Patent number: 6009830
    Abstract: A plasma etch reactor having independent gas feeds above the wafer and either at the sides or below the wafer. Preferably, a carrier gas such as argon is supplied from a showerhead electrode above the wafer while an etching gas is supplied from below. In the case of selectively etching an oxide over a non-oxide layer, the etchant gas should include one or more fluorocarbons.
    Type: Grant
    Filed: November 21, 1997
    Date of Patent: January 4, 2000
    Assignee: Applied Materials Inc.
    Inventors: Haojiang Li, Robert W. Wu
  • Patent number: 5986875
    Abstract: A puncture resistant electrostatic chuck (20) is described. The chuck (20) comprises at least one electrode (25); and a composite insulator (30) covering the electrode. The composite insulator comprises a matrix material having a conformal holding surface (50) capable of conforming to the substrate (35) under application of an electrostatic force generated by the electrode to reduce leakage of heat transfer fluid held between the substrate and the holding surface. A hard puncture resistant layer, such a layer of fibers or an aromatic polyamide layer, is positioned below the holding surface (50) and is sufficiently hard to increase the puncture resistance of the composite insulator.
    Type: Grant
    Filed: January 29, 1998
    Date of Patent: November 16, 1999
    Assignee: Applied Materials, Inc.
    Inventors: Arik Donde, Hyman J. Levinstein, Robert W. Wu, Andreas Hegedus, Edwin C. Weldon, Shamouil Shamouilian, Jon T. Clinton, Surinder S. Bedi