Abstract: Novel and useful quantum structures having a continuous well with control gates that control a local depletion region to form quantum dots. Local depleted well tunneling is used to control quantum operations to implement quantum computing circuits. Qubits are realized by modulating gate potential to control tunneling through local depleted region between two or more sections of the well. Complex structures with a higher number of qdots per continuous well and a larger number of wells are fabricated. Both planar and 3D FinFET semiconductor processes are used to build well to gate and well to well tunneling quantum structures. Combining a number of elementary quantum structure, a quantum computing machine is realized. An interface device provides an interface between classic circuitry and quantum circuitry by permitting tunneling of a single quantum particle from the classic side to the quantum side of the device.

Abstract: A radio frequency (RF) transmitter includes transceiver circuitry coupled to front end circuitry via an interconnect signal path. The transceiver circuitry is configured to generate a number of frequency-shifted RF beamforming signals such that each one of the frequency-shifted RF beamforming signals has a different frequency, and multiplex the frequency-shifted RF beamforming signals to provide a multiplexed interconnect signal. The front-end circuitry is configured to receive the multiplexed interconnect signal from the transceiver circuitry via the interconnect signal path, demultiplex the multiplexed interconnect signal to isolate each of the frequency-shifted RF beamforming signals, shift a frequency of each one of the frequency-shifted RF beamforming signals to provide a number of RF beamforming signals, and transmit each of the RF beamforming signals from a different antenna.

Abstract: The invention relates to an article comprising a stud for fitting into a complementary receptacle and/or comprising a receptacle for fitting into a complementary stud comprising a composition comprising A) a polyester, B) a polyolefin and C) a compatibilizer, wherein the amount of A) is at least 75 wt % of the total composition, the amount of B) is 5 to 22.5 wt % of the total composition and the weight ratio of the amount of B) with respect to the amount of C) is 2 to 20. The invention further relates to an article comprising the composition, particularly a toy block.

Abstract: A novel and useful modified semiconductor fabrication technique for realizing reliable semiconductor quantum structures. Quantum structures require a minimization of the parasitic capacitance of the control gate and the quantum well. The modified semiconductor process eliminates the fabrication of the metal, contact, and optionally the raised diffusion layers from the quantum wells, thereby resulting in much lower well and gate capacitances and therefore larger Coulomb blockade voltages. This allows easier implementation of the electronic control circuits in that they can have larger intrinsic noise and relaxed analog resolution. Several processes are disclosed including implementations of semiconductor quantum structures with tunneling through an oxide layer as well as tunneling through a local well depleted region. These techniques can be used in both planar semiconductor processes and 3D, e.g., FinFET, semiconductor processes. A dedicated process masking step is used for realizing the raised diffusions.

Abstract: The present disclosure relates to a bulk complementary-metal-oxide-semiconductor (CMOS) device including a device substrate, a thinned device die with a device region over the device substrate, a first mold compound, and a second mold compound. The device region includes a back-end-of-line (BEOL) portion and a front-end-of-line (FEOL) portion over the BEOL portion. The first mold compound resides over the device substrate, surrounds the thinned device die, and extends vertically beyond the thinned device die to define an opening over the thinned device die and within the first mold compound. The second mold compound fills the opening and directly connects the thinned device die. Herein, a silicon material with a resistivity between 5 Ohm-cm and 30000 Ohm-cm does not exist between the second mold compound and the thinned device die.

Abstract: RF switching circuitry includes a plurality of FETs coupled between an input node, an output node, and a gate drive node. When a positive power supply voltage is provided at the gate drive node, the plurality of FETs turn on and provide a low impedance path between the input node and the output node. When a negative power supply voltage is provided at the gate drive node, the plurality of FETs turn off and provide a high impedance path between the input node and the output node. Switch acceleration circuitry in the RF switching circuitry includes a bypass FET and multi-level driver circuitry. The bypass FET selectively bypasses the common resistor in response to a multi-level drive signal. The multi-level driver circuitry uses a built-in gate to capacitance of the bypass FET to provide the multi-level drive signal at an overvoltage that is above the positive power supply voltage.

Abstract: The present disclosure relates to a semiconductor package with reduced parasitic coupling effects, and a process for making the same. The disclosed semiconductor package includes a thinned flip-chip die and a first mold compound component with a dielectric constant no more than 7. The thinned flip-chip die includes a back-end-of-line (BEOL) layer with an upper surface that includes a first surface portion and a second surface portion surrounding the first surface portion, a device layer over the upper surface of the BEOL layer, and a buried oxide (BOX) layer over the device layer. The BEOL layer includes a first passive device and a second passive device, which are underlying the first surface portion and not underlying the second surface portion. Herein, the first mold compound component extends through the BOX layer and the device layer to the first surface portion.

Abstract: Embodiments of radio frequency (RF) filtering circuitry are disclosed. In one embodiment, the RF filtering circuitry includes a first port, a second port, a first RF filter path, and a second RF filter path. The first RF filter path is connected between the first port and the second port and includes at least a pair of weakly coupled resonators. The weakly coupled resonators are configured such that a first transfer response between the first port and the second port defines a first passband. The second RF filter path is coupled to the first RF filter path and is configured such that the first transfer response between the first port and the second port defines a stopband adjacent to the first passband without substantially increasing ripple variation of the first passband defined by the first transfer response.

Abstract: A novel and useful topological, scalable, and reprogrammable quantum computing machine having one or more quasi-unidimensional chord lines along which the movement of a particle is constrained. The unidimensional passage has localized energy levels that can be controlled with classic electronics. The chord line has two or more quantum dots between which a quasi-unidimensional channel is formed for the particle to travel from one qdot to the other. The tunneling path may be polysilicon, metal, thin oxide, or induced depletion region. The chord line can be in a two-dimensional space for a planar process or in a three-dimensional space with multiple layers of signal processing for a three dimensional process. A quantum structure has semiconductor dots with a layer that provides the chord line for the quantum particle evolution to occur from one dot to the other. The various layers may include polysilicon, metal, thin oxide, or induced depletion region either fully overlapped or partially overlapped.

Abstract: A vehicle door includes a trim panel coupled to a frame. A single-piece armrest substrate is coupled with the frame. The armrest substrate is a three-dimensionally printed member having interior walls that are printed within the armrest substrate according to a virtual force model generated during a virtual impact scenario. The interior walls define a plurality of voids defined within the armrest substrate.

Abstract: Novel and useful semiconductor structures using preferential tunneling through thin insulator layers. Semiconductor quantum structures are implemented using tunneling through a thin oxide layer. The quantum dots are fabricated with semiconductor wells, 3D fins or combinations thereof, while the tunneling path and any optional quantum transport path is implemented with gate layers. The oxide layer between the gate and the well is thin enough in the nanometer semiconductor processes to permit significant tunneling. Having a thin oxide layer on only one side of the well, while having thick oxide layers on all other sides, results in a preferential tunneling direction where tunneling is restricted to a small area resulting in aperture tunneling. The advantage being constraining quantum transport to a very narrow path, which can be approximated as unidimensional. In alternative embodiments, more than one preferential tunneling direction may be used. These techniques can be used in both planar and 3D (e.g.

Abstract: Novel and useful quantum structures that provide various control functions. Particles are brought into close proximity to interact with one another and exchange information. After entanglement, the particles are moved away from each other but they still carry the information contained initially. Measurement and detection are performed on the particles from the entangled ensemble to determine whether the particle is present or not in a given qdot. A quantum interaction gate is a circuit or structure operating on a relatively small number of qubits. Quantum interaction gates implement several quantum functions including a controlled NOT gate, quantum annealing gate, controlled SWAP gate, a controlled Pauli rotation gate, and ancillary gate. These quantum interaction gates can have numerous shapes including double V shape, H shape, X shape, L shape, I shape, etc.

Abstract: A novel and useful controlled quantum shift register for transporting particles from one quantum dot to another in a quantum structure. The shift register incorporates a succession of qdots with tunneling paths and control gates. Applying appropriate control signals to the control gates, a particle or a split quantum state is made to travel along the shift register. The shift register also includes ancillary double interaction where two pairs of quantum dots provide an ancillary function where the quantum state of one pair is replicated in the second pair. The shift register also provides bifurcation where an access path is split into two or more paths. Depending on the control pulse signals applied, quantum dots are extended into multiple paths. Control of the shift register is provided by electric control pulses. An optional auxiliary magnetic field provides additional control of the shift register.

Abstract: A novel and useful modified semiconductor process having staircase active well shapes that provide variable distances between pairs of locations (i.e. quantum dots) resulting in modulation of the quantum interaction strength from weak/negligible at large separations to moderate and then strong at short separations. To achieve a modulation of the distance between pairs of locations, diagonal, lateral, and vertical quantum particle/state transport is employed. As examples, both implementations of semiconductor quantum structures with tunneling through an oxide layer and with tunneling through a local well depleted region are disclosed. These techniques are applicable to both planar semiconductor processes and 3D (e.g. Fin-FET) semiconductor processes. Optical proximity correction is used to accommodate the staircase well layers. Each gate control circuit in the imposer circuitry functions to control more than one set of control gates.

Abstract: A radio frequency switch having an N number of switch cells coupled in series is disclosed. Each of the switch cells includes a field-effect transistor (FET), wherein a source of switch cell 1 is coupled to a first port, a drain of switch cell N is coupled to a second port, and a drain of switch cell X is coupled to a source of switch cell X+1 for switch cell 1 through switch cell N. A first diode stack has a first anode coupled to the body of switch cell X and a first cathode coupled to a drain of switch cell X+1 for switch cell 1 through switch cell N?1, and a second diode stack has a second anode coupled to the body of switch cell X and a second cathode coupled to the source of switch cell X?1 for switch cell 2 through switch cell N.

Abstract: A novel and useful modified semiconductor process having staircase active well shapes that provide variable distances between pairs of locations (i.e. quantum dots) resulting in modulation of the quantum interaction strength from weak/negligible at large separations to moderate and then strong at short separations. To achieve a modulation of the distance between pairs of locations, diagonal, lateral, and vertical quantum particle/state transport is employed. As examples, both implementations of semiconductor quantum structures with tunneling through an oxide layer and with tunneling through a local well depleted region are disclosed. These techniques are applicable to both planar semiconductor processes and 3D (e.g. Fin-FET) semiconductor processes. Optical proximity correction is used to accommodate the staircase well layers. Each gate control circuit in the imposer circuitry functions to control more than one set of control gates.

Abstract: A novel and useful controlled quantum shift register for transporting particles from one quantum dot to another in a quantum structure. The shift register incorporates a succession of qdots with tunneling paths and control gates. Applying appropriate control signals to the control gates, a particle or a split quantum state is made to travel along the shift register. The shift register also includes ancillary double interaction where two pairs of quantum dots provide an ancillary function where the quantum state of one pair is replicated in the second pair. The shift register also provides bifurcation where an access path is split into two or more paths. Depending on the control pulse signals applied, quantum dots are extended into multiple paths. Control of the shift register is provided by electric control pulses. An optional auxiliary magnetic field provides additional control of the shift register.

Abstract: A power amplifier system having a power amplifier with a signal input and a signal output and bias circuitry is disclosed. The bias circuitry includes a bandgap reference circuit coupled between a reference node and a fixed voltage node. A bias generator has a bias input coupled to the reference node and a bias output coupled to the signal input. Also included is a first digital-to-analog converter having a first converter output coupled to the reference node, a first voltage input, and a first digital input, wherein the first digital-to-analog converter is configured to adjust a reference voltage at the reference node in response to a first digital setting received at the first digital input. The first digital setting correlates with an indication of temperature of the power amplifier.

Abstract: A novel and useful multistage semiconductor quantum detector circuit incorporating an anticorrelation mechanism. The quantum structure has at least the first stage sensor of the detector merged into the quantum structure in order to minimize loading of the quantum structure. The merged quantum structure and detector sensor may be encapsulated in a metal cage in order to provide enhanced rejection of the environmental parasitic electric and/or magnetic fields. A double boot strapping detector front-end configuration substantially eliminates the loading coming from both the gate-source and the gate-drain parasitic capacitances of the first sensor device of the detector that is connected to the quantum structure. In addition, differential detection aids in rejecting leakage, noise, and correlated interference coupling. Both dummy referenced differential detection as well as self-referenced differential detection may be employed in the detector.

Abstract: A novel and useful controlled quantum shift register for transporting particles from one quantum dot to another in a quantum structure. The shift register incorporates a succession of qdots with tunneling paths and control gates. Applying appropriate control signals to the control gates, a particle or a split quantum state is made to travel along the shift register. The shift register also includes ancillary double interaction where two pairs of quantum dots provide an ancillary function where the quantum state of one pair is replicated in the second pair. The shift register also provides bifurcation where an access path is split into two or more paths. Depending on the control pulse signals applied, quantum dots are extended into multiple paths. Control of the shift register is provided by electric control pulses. An optional auxiliary magnetic field provides additional control of the shift register.