Patents by Inventor Roberto Gastaldi

Roberto Gastaldi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Apparatus and methods including a bipolar junction transistor coupled to a string of memory cells
    Patent number: 10861552
    Abstract: Some embodiments include apparatus and methods having a string of memory cells, a conductive line and a bipolar junction transistor configured to selectively couple the string of memory cells to the conductive line. Other embodiments including additional apparatus and methods are described.
    Type: Grant
    Filed: March 22, 2019
    Date of Patent: December 8, 2020
    Assignee: Micron Technology, Inc.
    Inventors: Paolo Tessariol, Roberto Gastaldi
  • Phase change memory device
    Patent number: 10482954
    Abstract: A phase change memory device with memory cells (2) formed by a phase change memory element (3) and a selection switch (4). A reference cell (2a) formed by an own phase change memory element (3) and an own selection switch (4) is associated to a group (7) of memory cells to be read. An electrical quantity of the group of memory cells is compared with an analogous electrical quantity of the reference cell, thereby compensating any drift in the properties of the memory cells.
    Type: Grant
    Filed: August 25, 2017
    Date of Patent: November 19, 2019
    Assignee: Micron Technology, Inc.
    Inventors: Fabio Pellizzer, Roberto Bez, Ferdinando Bedeschi, Roberto Gastaldi
  • APPARATUS AND METHODS INCLUDING A BIPOLAR JUNCTION TRANSISTOR COUPLED TO A STRING OF MEMORY CELLS
    Publication number: 20190221264
    Abstract: Some embodiments include apparatus and methods having a string of memory cells, a conductive line and a bipolar junction transistor configured to selectively couple the string of memory cells to the conductive line. Other embodiments including additional apparatus and methods are described.
    Type: Application
    Filed: March 22, 2019
    Publication date: July 18, 2019
    Inventors: Paolo Tessariol, Roberto Gastaldi
  • Refresh architecture and algorithm for non-volatile memories
    Patent number: 10311951
    Abstract: Methods and systems to refresh a nonvolatile memory device, such as a phase change memory. In an embodiment, as a function of system state, a memory device performs either a first refresh of memory cells using a margined read reference level or a second refresh of error-corrected memory cells using a non-margined read reference level.
    Type: Grant
    Filed: August 22, 2018
    Date of Patent: June 4, 2019
    Assignee: Micron Technology, Inc.
    Inventors: Ferdinando Bedeschi, Roberto Gastaldi
  • Apparatus and methods including a bipolar junction transistor coupled to a string of memory cells
    Patent number: 10269430
    Abstract: Some embodiments include apparatus and methods having a string of memory cells, a conductive line and a bipolar junction transistor configured to selectively couple the string of memory cells to the conductive line. Other embodiments including additional apparatus and methods are described.
    Type: Grant
    Filed: July 17, 2017
    Date of Patent: April 23, 2019
    Assignee: Micron Technology, Inc.
    Inventors: Paolo Tessariol, Roberto Gastaldi
  • REFRESH ARCHITECTURE AND ALGORITHM FOR NON-VOLATILE MEMORIES
    Publication number: 20180366189
    Abstract: Methods and systems to refresh a nonvolatile memory device, such as a phase change memory. In an embodiment, as a function of system state, a memory device performs either a first refresh of memory cells using a margined read reference level or a second refresh of error-corrected memory cells using a non-margined read reference level.
    Type: Application
    Filed: August 22, 2018
    Publication date: December 20, 2018
    Inventors: Ferdinando Bedeschi, Roberto Gastaldi
  • Refresh architecture and algorithm for non-volatile memories
    Patent number: 10074419
    Abstract: Methods and systems to refresh a nonvolatile memory device, such as a phase change memory. In an embodiment, as a function of system state, a memory device performs either a first refresh of memory cells using a margined read reference level or a second refresh of error-corrected memory cells using a non-margined read reference level.
    Type: Grant
    Filed: May 8, 2017
    Date of Patent: September 11, 2018
    Assignee: Micron Technology, Inc.
    Inventors: Ferdinando Bedeschi, Roberto Gastaldi
  • PHASE CHANGE MEMORY DEVICE
    Publication number: 20170352414
    Abstract: A phase change memory device with memory cells (2) formed by a phase change memory element (3) and a selection switch (4). A reference cell (2a) formed by an own phase change memory element (3) and an own selection switch (4) is associated to a group (7) of memory cells to be read. An electrical quantity of the group of memory cells is compared with an analogous electrical quantity of the reference cell, thereby compensating any drift in the properties of the memory cells.
    Type: Application
    Filed: August 25, 2017
    Publication date: December 7, 2017
    Inventors: Fabio Pellizzer, Roberto Bez, Ferdinando Bedeschi, Roberto Gastaldi
  • APPARATUS AND METHODS INCLUDING A BIPOLAR JUNCTION TRANSISTOR COUPLED TO A STRING OF MEMORY CELLS
    Publication number: 20170316831
    Abstract: Some embodiments include apparatus and methods having a string of memory cells, a conductive line and a bipolar junction transistor configured to selectively couple the string of memory cells to the conductive line. Other embodiments including additional apparatus and methods are described.
    Type: Application
    Filed: July 17, 2017
    Publication date: November 2, 2017
    Inventors: Paolo Tessariol, Roberto Gastaldi
  • Phase change memory device
    Patent number: 9779805
    Abstract: A phase change memory device with memory cells (2) formed by a phase change memory element (3) and a selection switch (4). A reference cell (2a) formed by an own phase change memory element (3) and an own selection switch (4) is associated to a group (7) of memory cells to be read. An electrical quantity of the group of memory cells is compared with an analogous electrical quantity of the reference cell, thereby compensating any drift in the properties of the memory cells.
    Type: Grant
    Filed: June 22, 2015
    Date of Patent: October 3, 2017
    Assignee: Micron Technology, Inc.
    Inventors: Fabio Pellizzer, Roberto Bez, Ferdinando Bedeschi, Roberto Gastaldi
  • REFRESH ARCHITECTURE AND ALGORITHM FOR NON-VOLATILE MEMORIES
    Publication number: 20170243644
    Abstract: Methods and systems to refresh a nonvolatile memory device, such as a phase change memory. In an embodiment, as a function of system state, a memory device performs either a first refresh of memory cells using a margined read reference level or a second refresh of error-corrected memory cells using a non-margined read reference level.
    Type: Application
    Filed: May 8, 2017
    Publication date: August 24, 2017
    Inventors: Ferdinando Bedeschi, Roberto Gastaldi
  • Apparatus and methods including a bipolar junction transistor coupled to a string of memory cells
    Patent number: 9711223
    Abstract: Some embodiments include apparatus and methods having a string of memory cells, a conductive line and a bipolar junction transistor configured to selectively couple the string of memory cells to the conductive line. Other embodiments including additional apparatus and methods are described.
    Type: Grant
    Filed: January 27, 2014
    Date of Patent: July 18, 2017
    Assignee: Micron Technology, Inc.
    Inventors: Paolo Tessariol, Roberto Gastaldi
  • Refresh architecture and algorithm for non-volatile memories
    Patent number: 9646689
    Abstract: Methods and systems to refresh a nonvolatile memory device, such as a phase change memory. In an embodiment, as a function of system state, a memory device performs either a first refresh of memory cells using a margined read reference level or a second refresh of error-corrected memory cells using a non-margined read reference level.
    Type: Grant
    Filed: June 29, 2015
    Date of Patent: May 9, 2017
    Assignee: Micron Technology, Inc.
    Inventors: Ferdinando Bedeschi, Roberto Gastaldi
  • Resistance variable memory sensing
    Patent number: 9437294
    Abstract: The present disclosure includes apparatuses and methods for sensing a resistance variable memory cell. A number of embodiments include programming a memory cell to an initial data state and determining a data state of the memory cell by applying a programming signal to the memory cell, the programming signal associated with programming memory cells to a particular data state, and determining whether the data state of the memory cell changes from the initial data state to the particular data state during application of the programming signal.
    Type: Grant
    Filed: May 20, 2015
    Date of Patent: September 6, 2016
    Assignee: Micron Technology, Inc.
    Inventors: Ferdinando Bedeschi, Roberto Gastaldi
  • Read distribution management for phase change memory
    Patent number: 9196359
    Abstract: Subject matter disclosed herein relates to a memory device, and more particularly to write performance of a phase change memory.
    Type: Grant
    Filed: December 15, 2014
    Date of Patent: November 24, 2015
    Assignee: Micron Technology, Inc.
    Inventors: Ferdinando Bedeschi, Roberto Gastaldi
  • REFRESH ARCHITECTURE AND ALGORITHM FOR NON-VOLATILE MEMORIES
    Publication number: 20150302924
    Abstract: Methods and systems to refresh a nonvolatile memory device, such as a phase change memory. In an embodiment, as a function of system state, a memory device performs either a first refresh of memory cells using a margined read reference level or a second refresh of error-corrected memory cells using a non-margined read reference level.
    Type: Application
    Filed: June 29, 2015
    Publication date: October 22, 2015
    Inventors: Ferdinando Bedeschi, Roberto Gastaldi
  • PHASE CHANGE MEMORY DEVICE
    Publication number: 20150287458
    Abstract: A phase change memory device with memory cells (2) formed by a phase change memory element (3) and a selection switch (4). A reference cell (2a) formed by an own phase change memory element (3) and an own selection switch (4) is associated to a group (7) of memory cells to be read. An electrical quantity of the group of memory cells is compared with an analogous electrical quantity of the reference cell, thereby compensating any drift in the properties of the memory cells.
    Type: Application
    Filed: June 22, 2015
    Publication date: October 8, 2015
    Inventors: Fabio Pellizzer, Roberto Bez, Ferdinando Bedeschi, Roberto Gastaldi
  • RESISTANCE VARIABLE MEMORY SENSING
    Publication number: 20150255152
    Abstract: The present disclosure includes apparatuses and methods for sensing a resistance variable memory cell. A number of embodiments include programming a memory cell to an initial data state and determining a data state of the memory cell by applying a programming signal to the memory cell, the programming signal associated with programming memory cells to a particular data state, and determining whether the data state of the memory cell changes from the initial data state to the particular data state during application of the programming signal.
    Type: Application
    Filed: May 20, 2015
    Publication date: September 10, 2015
    Inventors: Ferdinando Bedeschi, Roberto Gastaldi
  • Refresh architecture and algorithm for non-volatile memories
    Patent number: 9070473
    Abstract: Methods and systems to refresh a non-volatile memory device, such as a phase change memory. In an embodiment, as a function of system state, a memory device performs either a first refresh of memory cells using a margined read reference level or a second refresh of error-corrected memory cells using a non-margined read reference level.
    Type: Grant
    Filed: December 2, 2009
    Date of Patent: June 30, 2015
    Assignee: Micron Technology, Inc.
    Inventors: Ferdinando Bedeschi, Roberto Gastaldi
  • Phase change memory device
    Patent number: 9064565
    Abstract: A phase change memory device with memory cells is formed from a phase change memory element and a selection switch. A reference cell is formed from a similar phase change memory element and an associated selection switch and is associated to a group of memory cells to be read. An electrical quantity of the group of memory cells is compared with an analogous electrical quantity of the reference cell, thereby compensating for drift in the properties of the memory cells.
    Type: Grant
    Filed: October 7, 2013
    Date of Patent: June 23, 2015
    Assignee: Micron Technology, Inc.
    Inventors: Fabio Pellizzer, Roberto Bez, Ferdinando Bedeschi, Roberto Gastaldi