Patents by Inventor Roberto Somaschini
Roberto Somaschini has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11600665Abstract: The disclosed technology relates generally to integrated circuit devices, and in particular to cross-point memory arrays and methods for fabricating the same. In one aspect, a method of fabricating cross-point memory arrays comprises forming a memory cell material stack which includes a first active material and a second active material over the first active material, wherein one of the first and second active materials comprises a storage material and the other of the first and second active materials comprises a selector material.Type: GrantFiled: October 13, 2020Date of Patent: March 7, 2023Assignee: Micron Technology, Inc.Inventors: Marcello Ravasio, Samuele Sciarrillo, Fabio Pellizzer, Innocenzo Tortorelli, Roberto Somaschini, Cristina Casellato, Riccardo Mottadelli
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Patent number: 11056383Abstract: Array contacts for semiconductor memories may be formed using a first set of parallel stripe masks and subsequently a second set of parallel stripe masks transverse to the first set. For example, one set of masks may be utilized to etch a dielectric layer, to form parallel spaced trenches. Then the trenches may be filled with a sacrificial material. That sacrificial material may then be masked transversely to its length and etched, for example. The resulting openings may be filled with a metal to form array contacts.Type: GrantFiled: January 26, 2018Date of Patent: July 6, 2021Assignee: Micron Technology, Inc.Inventors: Roberto Somaschini, Alessandro Vaccaro, Paolo Tessariol, Giulio Albini
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Patent number: 11049769Abstract: Methods and structures provide horizontal conductive lines of fine pitch and self-aligned contacts extending from them, where the contacts have at least one dimension with a more relaxed pitch. Buried hard mask materials permit self-alignment of the lines and contacts without a critical mask, such as for word-line electrode lines and word-line contacts in a memory device.Type: GrantFiled: August 23, 2018Date of Patent: June 29, 2021Assignee: Micron Technology, Inc.Inventors: Fabio Pellizzer, Antonino Rigano, Roberto Somaschini
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Publication number: 20210091140Abstract: The disclosed technology relates generally to integrated circuit devices, and in particular to cross-point memory arrays and methods for fabricating the same. In one aspect, a method of fabricating cross-point memory arrays comprises forming a memory cell material stack which includes a first active material and a second active material over the first active material, wherein one of the first and second active materials comprises a storage material and the other of the first and second active materials comprises a selector material.Type: ApplicationFiled: October 13, 2020Publication date: March 25, 2021Inventors: Marcello Ravasio, Samuele Sciarrillo, Fabio Pellizzer, Innocenzo Tortorelli, Roberto Somaschini, Cristina Casellato, Riccardo Mottadelli
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Patent number: 10954121Abstract: A microelectromechanical device having a first substrate of semiconductor material and a second substrate of semiconductor material having a bonding recess delimited by projecting portions, monolithic therewith. The bonding recess forms a closed cavity with the first substrate. A bonding structure is arranged within the closed cavity and is bonded to the first and second substrates. A microelectromechanical structure is formed in a substrate chosen between the first and second substrates. The device is manufactured by forming the bonding recess in a first wafer; depositing a bonding mass in the bonding recess, the bonding mass having a greater depth than the bonding recess; and bonding the two wafers.Type: GrantFiled: December 9, 2019Date of Patent: March 23, 2021Assignee: STMICROELECTRONICS S.r.l.Inventors: Giorgio Allegato, Laura Oggioni, Matteo Garavaglia, Roberto Somaschini
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Patent number: 10910437Abstract: A method of fabricating a memory device is disclosed. In one aspect, the method comprises patterning a first conductive line extending in a first direction. The method additionally includes forming a free-standing pillar of a memory cell stack on the first conductive line after patterning the first conductive line. Forming the free-standing pillar includes depositing a memory cell stack comprising a selector material and a storage material over the conductive line and patterning the memory cell stack to form the free-standing pillar. The method further includes patterning a second conductive line on the pillar after patterning the memory cell stack, the second conductive line extending in a second direction crossing the first direction.Type: GrantFiled: May 23, 2019Date of Patent: February 2, 2021Assignee: Micron Technology, Inc.Inventors: Ombretta Donghi, Marcello Ravasio, Samuele Sciarrillo, Roberto Somaschini
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Patent number: 10854674Abstract: The disclosed technology relates generally to integrated circuit devices, and in particular to cross-point memory arrays and methods for fabricating the same. In one aspect, a method of fabricating cross-point memory arrays comprises forming a memory cell material stack which includes a first active material and a second active material over the first active material, wherein one of the first and second active materials comprises a storage material and the other of the first and second active materials comprises a selector material.Type: GrantFiled: August 31, 2017Date of Patent: December 1, 2020Assignee: Micron Technology, Inc.Inventors: Marcello Ravasio, Samuele Sciarrillo, Fabio Pellizzer, Innocenzo Tortorelli, Roberto Somaschini, Cristina Casellato, Riccardo Mottadelli
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Publication number: 20200123004Abstract: A microelectromechanical device having a first substrate of semiconductor material and a second substrate of semiconductor material having a bonding recess delimited by projecting portions, monolithic therewith. The bonding recess forms a closed cavity with the first substrate. A bonding structure is arranged within the closed cavity and is bonded to the first and second substrates. A microelectromechanical structure is formed in a substrate chosen between the first and second substrates. The device is manufactured by forming the bonding recess in a first wafer; depositing a bonding mass in the bonding recess, the bonding mass having a greater depth than the bonding recess; and bonding the two wafers.Type: ApplicationFiled: December 9, 2019Publication date: April 23, 2020Inventors: Giorgio ALLEGATO, Laura OGGIONI, Matteo GARAVAGLIA, Roberto SOMASCHINI
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Patent number: 10570009Abstract: A microelectromechanical device having a first substrate of semiconductor material and a second substrate of semiconductor material having a bonding recess delimited by projecting portions, monolithic therewith. The bonding recess forms a closed cavity with the first substrate. A bonding structure is arranged within the closed cavity and is bonded to the first and second substrates. A microelectromechanical structure is formed in a substrate chosen between the first and second substrates. The device is manufactured by forming the bonding recess in a first wafer; depositing a bonding mass in the bonding recess, the bonding mass having a greater depth than the bonding recess; and bonding the two wafers.Type: GrantFiled: February 22, 2019Date of Patent: February 25, 2020Assignee: STMICROELECTRONICS S.R.L.Inventors: Giorgio Allegato, Laura Oggioni, Matteo Garavaglia, Roberto Somaschini
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Publication number: 20190355789Abstract: A method of fabricating a memory device is disclosed. In one aspect, the method comprises patterning a first conductive line extending in a first direction. The method additionally includes forming a free-standing pillar of a memory cell stack on the first conductive line after patterning the first conductive line. Forming the free-standing pillar includes depositing a memory cell stack comprising a selector material and a storage material over the conductive line and patterning the memory cell stack to form the free-standing pillar. The method further includes patterning a second conductive line on the pillar after patterning the memory cell stack, the second conductive line extending in a second direction crossing the first direction.Type: ApplicationFiled: May 23, 2019Publication date: November 21, 2019Inventors: Ombretta Donghi, Marcello Ravasio, Samuele Sciarrillo, Roberto Somaschini
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Patent number: 10364145Abstract: A roughened silicon surface is formed by a process including repetitively performed roughening cycles. Each roughening cycles including a step for depositing a non-planar polymeric layer over an area of a silicon body and a step for plasma etching the polymeric layer and the area of the silicon body etch in a non-unidirectional way. As a result, a surface portion of the silicon body is removed, in a non-uniform way, to a depth not greater than 10 nm.Type: GrantFiled: March 16, 2017Date of Patent: July 30, 2019Assignee: STMicroelectronics S.r.l.Inventors: Roberto Somaschini, Pietro Petruzza
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Patent number: 10367033Abstract: A method of fabricating a memory device is disclosed. In one aspect, the method comprises patterning a first conductive line extending in a first direction. The method additionally includes forming a free-standing pillar of a memory cell stack on the first conductive line after patterning the first conductive line. Forming the free-standing pillar includes depositing a memory cell stack comprising a selector material and a storage material over the conductive line and patterning the memory cell stack to form the free-standing pillar. The method further includes patterning a second conductive line on the pillar after patterning the memory cell stack, the second conductive line extending in a second direction crossing the first direction.Type: GrantFiled: August 24, 2018Date of Patent: July 30, 2019Assignee: Micron Technology, Inc.Inventors: Ombretta Donghi, Marcello Ravasio, Samuele Sciarrillo, Roberto Somaschini
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Publication number: 20190185318Abstract: A microelectromechanical device having a first substrate of semiconductor material and a second substrate of semiconductor material having a bonding recess delimited by projecting portions, monolithic therewith. The bonding recess forms a closed cavity with the first substrate. A bonding structure is arranged within the closed cavity and is bonded to the first and second substrates. A microelectromechanical structure is formed in a substrate chosen between the first and second substrates. The device is manufactured by forming the bonding recess in a first wafer; depositing a bonding mass in the bonding recess, the bonding mass having a greater depth than the bonding recess; and bonding the two wafers.Type: ApplicationFiled: February 22, 2019Publication date: June 20, 2019Inventors: Giorgio Allegato, Laura Oggioni, Matteo Garavaglia, Roberto Somaschini
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Patent number: 10227233Abstract: A microelectromechanical device having a first substrate of semiconductor material and a second substrate of semiconductor material having a bonding recess delimited by projecting portions, monolithic therewith. The bonding recess forms a closed cavity with the first substrate. A bonding structure is arranged within the closed cavity and is bonded to the first and second substrates. A microelectromechanical structure is formed in a substrate chosen between the first and second substrates. The device is manufactured by forming the bonding recess in a first wafer; depositing a bonding mass in the bonding recess, the bonding mass having a greater depth than the bonding recess; and bonding the two wafers.Type: GrantFiled: December 14, 2016Date of Patent: March 12, 2019Assignee: STMICROELECTRONICS S.R.L.Inventors: Giorgio Allegato, Laura Oggioni, Matteo Garavaglia, Roberto Somaschini
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Publication number: 20190067372Abstract: A method of fabricating a memory device is disclosed. In one aspect, the method comprises patterning a first conductive line extending in a first direction. The method additionally includes forming a free-standing pillar of a memory cell stack on the first conductive line after patterning the first conductive line. Forming the free-standing pillar includes depositing a memory cell stack comprising a selector material and a storage material over the conductive line and patterning the memory cell stack to form the free-standing pillar. The method further includes patterning a second conductive line on the pillar after patterning the memory cell stack, the second conductive line extending in a second direction crossing the first direction.Type: ApplicationFiled: August 24, 2018Publication date: February 28, 2019Inventors: Ombretta Donghi, Marcello Ravasio, Samuele Sciarrillo, Roberto Somaschini
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Publication number: 20180366370Abstract: Methods and structures provide horizontal conductive lines of fine pitch and self-aligned contacts extending from them, where the contacts have at least one dimension with a more relaxed pitch. Buried hard mask materials permit self-alignment of the lines and contacts without a critical mask, such as for word-line electrode lines and word-line contacts in a memory device.Type: ApplicationFiled: August 23, 2018Publication date: December 20, 2018Inventors: Fabio Pellizzer, Antonino Rigano, Roberto Somaschini
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Patent number: 10157788Abstract: Methods and structures provide horizontal conductive lines of fine pitch and self-aligned contacts extending from them, where the contacts have at least one dimension with a more relaxed pitch. Buried hard mask materials permit self-alignment of the lines and contacts without a critical mask, such as for word-line electrode lines and word-line contacts in a memory device.Type: GrantFiled: January 19, 2016Date of Patent: December 18, 2018Assignee: MICRON TECHNOLOGY, INC.Inventors: Fabio Pellizzer, Antonino Rigano, Roberto Somaschini
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Patent number: 10084016Abstract: A method of fabricating a memory device is disclosed. In one aspect, the method comprises patterning a first conductive line extending in a first direction. The method additionally includes forming a free-standing pillar of a memory cell stack on the first conductive line after patterning the first conductive line. Forming the free-standing pillar includes depositing a memory cell stack comprising a selector material and a storage material over the conductive line and patterning the memory cell stack to form the free-standing pillar. The method further includes patterning a second conductive line on the pillar after patterning the memory cell stack, the second conductive line extending in a second direction crossing the first direction.Type: GrantFiled: November 21, 2013Date of Patent: September 25, 2018Assignee: MICRON TECHNOLOGY, INC.Inventors: Ombretta Donghi, Marcello Ravasio, Samuele Sciarrillo, Roberto Somaschini
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Publication number: 20180151415Abstract: Array contacts for semiconductor memories may be formed using a first set of parallel stripe masks and subsequently a second set of parallel stripe masks transverse to the first set. For example, one set of masks may be utilized to etch a dielectric layer, to form parallel spaced trenches. Then the trenches may be filled with a sacrificial material. That sacrificial material may then be masked transversely to its length and etched, for example. The resulting openings may be filled with a metal to form array contacts.Type: ApplicationFiled: January 26, 2018Publication date: May 31, 2018Applicant: Micron Technology, Inc.Inventors: Roberto Somaschini, Alessandro Vaccaro, Paolo Tessariol, Giulio Albini
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Publication number: 20180086633Abstract: A roughened silicon surface is formed by a process including repetitively performed roughening cycles. Each roughening cycles including a step for depositing a non-planar polymeric layer over an area of a silicon body and a step for plasma etching the polymeric layer and the area of the silicon body etch in a non-unidirectional way. As a result, a surface portion of the silicon body is removed, in a non-uniform way, to a depth not greater than 10 nm.Type: ApplicationFiled: March 16, 2017Publication date: March 29, 2018Applicant: STMicroelectronics S.r.l.Inventors: Roberto Somaschini, Pietro Petruzza