Patents by Inventor Roberto Somaschini

Roberto Somaschini has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • FORMING ARRAY CONTACTS IN SEMICONDUCTOR MEMORIES
    Publication number: 20140284812
    Abstract: Array contacts for semiconductor memories may be formed using a first set of parallel stripe masks and subsequently a second set of parallel stripe masks transverse to the first set. For example, one set of masks may be utilized to etch a dielectric layer, to form parallel spaced trenches. Then the trenches may be filled with a sacrificial material. That sacrificial material may then be masked transversely to its length and etched, for example. The resulting openings may be filled with a metal to form array contacts.
    Type: Application
    Filed: June 11, 2014
    Publication date: September 25, 2014
    Inventors: Roberto Somaschini, Alessandro Vaccaro, Paolo Tessariol, Giulio Albini
  • MEMORY ARRAYS AND METHODS OF FORMING THE SAME
    Publication number: 20140252300
    Abstract: Memory arrays and methods of forming the same are provided. One example method of forming a memory array can include forming a conductive material in a number of vias and on a substrate structure, the conductive material to serve as a number of conductive lines of the array and coupling the number of conductive lines to the array circuitry.
    Type: Application
    Filed: April 14, 2014
    Publication date: September 11, 2014
    Applicant: Micron Technology, Inc.
    Inventors: Roberto Somaschini, Fabio Pellizzer, Carmela Cupeta, Nicola Nastasi
  • Forming array contacts in semiconductor memories
    Patent number: 8759980
    Abstract: Array contacts for semiconductor memories may be formed using a first set of parallel stripe masks and subsequently a second set of parallel stripe masks transverse to the first set. For example, one set of masks may be utilized to etch a dielectric layer, to form parallel spaced trenches. Then the trenches may be filled with a sacrificial material. That sacrificial material may then be masked transversely to its length and etched, for example. The resulting openings may be filled with a metal to form array contacts.
    Type: Grant
    Filed: October 29, 2013
    Date of Patent: June 24, 2014
    Assignee: Micron Technology, Inc.
    Inventors: Roberto Somaschini, Alessandro Vaccaro, Paolo Tessariol, Giulio Albini
  • Combined conductive plug/conductive line memory arrays and methods of forming the same
    Patent number: 8716059
    Abstract: Memory arrays and methods of forming the same are provided. One example method of forming a memory array can include forming a conductive material in a number of vias and on a substrate structure, the conductive material to serve as a number of conductive lines of the array and coupling the number of conductive lines to the array circuitry.
    Type: Grant
    Filed: February 2, 2012
    Date of Patent: May 6, 2014
    Assignee: Micron Technology, Inc.
    Inventors: Roberto Somaschini, Fabio Pellizzer, Carmela Cupeta, Nicola Nastasi
  • SELF-ALIGNED INTERCONNECTION FOR INTEGRATED CIRCUITS
    Publication number: 20140054534
    Abstract: Methods and structures provide horizontal conductive lines of fine pitch and self-aligned contacts extending from them, where the contacts have at least one dimension with a more relaxed pitch. Buried hard mask materials permit self-alignment of the lines and contacts without a critical mask, such as for word-line electrode lines and word-line contacts in a memory device.
    Type: Application
    Filed: August 23, 2012
    Publication date: February 27, 2014
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Fabio Pellizzer, Antonino Rigano, Roberto Somaschini
  • FORMING ARRAY CONTACTS IN SEMICONDUCTOR MEMORIES
    Publication number: 20140048956
    Abstract: Array contacts for semiconductor memories may be formed using a first set of parallel stripe masks and subsequently a second set of parallel stripe masks transverse to the first set. For example, one set of masks may be utilized to etch a dielectric layer, to form parallel spaced trenches. Then the trenches may be filled with a sacrificial material. That sacrificial material may then be masked transversely to its length and etched, for example. The resulting openings may be filled with a metal to form array contacts.
    Type: Application
    Filed: October 29, 2013
    Publication date: February 20, 2014
    Applicant: Micron Technology, Inc.
    Inventors: Roberto Somaschini, Alessandro Vaccaro, Paolo Tessariol, Giulio Albini
  • Forming array contacts in semiconductor memories
    Patent number: 8569891
    Abstract: Array contacts for semiconductor memories may be formed using a first set of parallel stripe masks and subsequently a second set of parallel stripe masks transverse to the first set. For example, one set of masks may be utilized to etch a dielectric layer, to form parallel spaced trenches. Then the trenches may be filled with a sacrificial material. That sacrificial material may then be masked transversely to its length and etched, for example. The resulting openings may be filled with a metal to form array contacts.
    Type: Grant
    Filed: March 16, 2010
    Date of Patent: October 29, 2013
    Assignee: Micron Technology, Inc.
    Inventors: Roberto Somaschini, Alessandro Vaccaro, Paolo Tessariol, Giulio Albini
  • MEMORY ARRAYS AND METHODS OF FORMING THE SAME
    Publication number: 20130200322
    Abstract: Memory arrays and methods of forming the same are provided. One example method of forming a memory array can include forming a conductive material in a number of vias and on a substrate structure, the conductive material to serve as a number of conductive lines of the array and coupling the number of conductive lines to the array circuitry.
    Type: Application
    Filed: February 2, 2012
    Publication date: August 8, 2013
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Roberto Somaschini, Fabio Pellizzer, Carmela Cupeta, Nicola Nastasi