Abstract: Methods are provided that relate to the capacitive monitoring of characteristic pertaining to layer formed during the back end-of-the-line (BEOL) processing of a semiconductor device. In one embodiment, a method includes the steps of forming a first capacitor array including first and second overlying contacts each formed in a different one of the plurality of BEOL layers, measuring the interlayer capacitance between the first and second overlying contacts, and converting the measured interlayer capacitance to a distance between the first and second overlying contacts.

Abstract: A die seal arrangement and method for making the same negatively biases the die edge seal of a die by connecting the die edge seal to a source of negative electrical potential, with respect to electrical ground. The die edge seal, made of copper, for example, has its oxidation reaction potential shifted to a region which is energetically unfavorable. This significantly retards or eliminates oxidation of the copper die edge seal at circuit operation temperature, thereby maintain the integrity and functionality of the die edge seal to protect active circuitry on the die, even when the die edge seal is exposed to moisture and air.

Abstract: A UV system, such as used in UV curing of dielectric material, for example, and a method of making the same, has a reflector and a localized UV source positioned at an optical center of the reflector. The window separates the UV source from a work piece. The UV source is on a first side of the window and the work piece is on a second side of the window. A partially reflecting mirror is provided on the first side of the window. The partially reflecting mirror, with the reflector and localized UV source, provides for a maximum amount of UV energy to be provided in a uniformly distributed manner across the plane of the window to the work piece.