Patents by Inventor Rodney Smedt
Rodney Smedt has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20170176354Abstract: Methods and systems for measuring periodic structures using multi-angle X-ray reflectance scatterometry (XRS) are disclosed. For example, a method of measuring a sample by X-ray reflectance scatterometry involves impinging an incident X-ray beam on a sample having a periodic structure to generate a scattered X-ray beam, the incident X-ray beam simultaneously providing a plurality of incident angles and a plurality of azimuthal angles. The method also involves collecting at least a portion of the scattered X-ray beam.Type: ApplicationFiled: March 6, 2017Publication date: June 22, 2017Inventors: Heath A. Pois, David A. Reed, Bruno W. Schueler, Rodney Smedt, Jeffrey T. Fanton
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Patent number: 9588066Abstract: Methods and systems for measuring periodic structures using multi-angle X-ray reflectance scatterometry (XRS) are disclosed. For example, a method of measuring a sample by X-ray reflectance scatterometry involves impinging an incident X-ray beam on a sample having a periodic structure to generate a scattered X-ray beam, the incident X-ray beam simultaneously providing a plurality of incident angles and a plurality of azimuthal angles. The method also involves collecting at least a portion of the scattered X-ray beam.Type: GrantFiled: January 23, 2014Date of Patent: March 7, 2017Assignee: ReVera, IncorporatedInventors: Heath A. Pois, David A. Reed, Bruno W. Schueler, Rodney Smedt, Jeffrey T. Fanton
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Patent number: 9297771Abstract: Methods and systems for fabricating platelets of a monochromator for X-ray photoelectron spectroscopy (XPS) are disclosed. For example, a method of fabricating a platelet of a monochromator for X-ray photoelectron spectroscopy involves placing a crystal on a stage of an X-ray measuring apparatus, the crystal having a top surface. The method also involves measuring, by X-ray reflection, an orientation of a crystal plane of the crystal, the crystal plane beneath the top surface of the crystal and having a primary axis. The method also involves measuring a surface angle of the top surface of the crystal by measuring a light beam reflected from the top surface of the crystal.Type: GrantFiled: August 23, 2013Date of Patent: March 29, 2016Assignee: ReVera, IncorporatedInventors: Jeffrey T. Fanton, Rodney Smedt, Bruno W. Schueler, David A. Reed
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Patent number: 9240254Abstract: Systems and methods for characterizing films by X-ray photoelectron spectroscopy (XPS) are disclosed. For example, a system for characterizing a film may include an X-ray source for generating an X-ray beam having an energy below the k-edge of silicon. A sample holder may be included for positioning a sample in a pathway of the X-ray beam. A first detector may be included for collecting an XPS signal generated by bombarding the sample with the X-ray beam. A second detector may be included for collecting an X-ray fluorescence (XRF) signal generated by bombarding the sample with the X-ray beam. Monitoring/estimation of the primary X-ray flux at the analysis site may be provided by X-ray flux detectors near and at the analysis site. Both XRF and XPS signals may be normalized to the (estimated) primary X-ray flux to enable film thickness or dose measurement without the need to employ signal intensity ratios.Type: GrantFiled: September 27, 2011Date of Patent: January 19, 2016Assignee: ReVera, IncorporatedInventors: Bruno W. Schueler, David A. Reed, Jeffrey Thomas Fanton, Rodney Smedt
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Publication number: 20150204802Abstract: Methods and systems for measuring periodic structures using multi-angle X-ray reflectance scatterometry (XRS) are disclosed. For example, a method of measuring a sample by X-ray reflectance scatterometry involves impinging an incident X-ray beam on a sample having a periodic structure to generate a scattered X-ray beam, the incident X-ray beam simultaneously providing a plurality of incident angles and a plurality of azimuthal angles. The method also involves collecting at least a portion of the scattered X-ray beam.Type: ApplicationFiled: January 23, 2014Publication date: July 23, 2015Inventors: Heath A. Pois, David A. Reed, Bruno W. Schueler, Rodney Smedt, Jeffrey T. Fanton
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Publication number: 20150052723Abstract: Methods and systems for fabricating platelets of a monochromator for X-ray photoelectron spectroscopy (XPS) are disclosed. For example, a method of fabricating a platelet of a monochromator for X-ray photoelectron spectroscopy involves placing a crystal on a stage of an X-ray measuring apparatus, the crystal having a top surface. The method also involves measuring, by X-ray reflection, an orientation of a crystal plane of the crystal, the crystal plane beneath the top surface of the crystal and having a primary axis. The method also involves measuring a surface angle of the top surface of the crystal by measuring a light beam reflected from the top surface of the crystal.Type: ApplicationFiled: August 23, 2013Publication date: February 26, 2015Inventors: Jeffrey T. Fanton, Rodney Smedt, Bruno W. Schueler, David A. Reed
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Publication number: 20130314710Abstract: Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including: but not limited to, critical dimension and overlay misregistration; defects and thin film characteristics; critical dimension and defects; critical dimension and thin film characteristics; critical dimension, thin film characteristics and defects; macro defects and micro defects; flatness, thin film characteristics and defects; overlay misregistration and flatness; an implant characteristic and defects; and adhesion and thickness.Type: ApplicationFiled: August 5, 2013Publication date: November 28, 2013Applicant: KLA-TENCOR TECHNOLOGIES CORPORATIONInventors: Ady Levy, Kyle A. Brown, Rodney Smedt, Gary Bultman, Mehrdad Nikoonahad, Dan Wack, John Fielden, Ibrahim Abdul-Halim
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Patent number: 8502979Abstract: Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including: but not limited to, critical dimension and overlay misregistration; defects and thin film characteristics; critical dimension and defects; critical dimension and thin film characteristics; critical dimension, thin film characteristics and defects; macro defects and micro defects; flatness, thin film characteristics and defects; overlay misregistration and flatness; an implant characteristic and defects; and adhesion and thickness.Type: GrantFiled: May 9, 2012Date of Patent: August 6, 2013Assignee: KLA-Tencor Technologies Corp.Inventors: Ady Levy, Kyle A. Brown, Rodney Smedt, Gary Bultman, Mehrdad Nikoonahad, Dan Wack, John Fielden, Ibrahim Abdul-Halim
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Publication number: 20130077742Abstract: Systems and methods for characterizing films by X-ray photoelectron spectroscopy (XPS) are disclosed. For example, a system for characterizing a film may include an X-ray source for generating an X-ray beam having an energy below the k-edge of silicon. A sample holder may be included for positioning a sample in a pathway of the X-ray beam. A first detector may be included for collecting an XPS signal generated by bombarding the sample with the X-ray beam. A second detector may be included for collecting an X-ray fluorescence (XRF) signal generated by bombarding the sample with the X-ray beam. Monitoring/estimation of the primary X-ray flux at the analysis site may be provided by X-ray flux detectors near and at the analysis site. Both XRF and XPS signals may be normalized to the (estimated) primary X-ray flux to enable film thickness or dose measurement without the need to employ signal intensity ratios.Type: ApplicationFiled: September 27, 2011Publication date: March 28, 2013Inventors: Bruno W. Schueler, David A. Reed, Jeffrey T. Fanton, Rodney Smedt
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Publication number: 20130039460Abstract: Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including: but not limited to, critical dimension and overlay misregistration; defects and thin film characteristics; critical dimension and defects; critical dimension and thin film characteristics; critical dimension, thin film characteristics and defects; macro defects and micro defects; flatness, thin film characteristics and defects; overlay misregistration and flatness; an implant characteristic and defects; and adhesion and thickness.Type: ApplicationFiled: May 9, 2012Publication date: February 14, 2013Applicant: KLA-TENCOR TECHNOLOGIES CORPORATIONInventors: Ady Levy, Kyle A. Brown, Rodney Smedt, Gary Bultman, Mehrdad Nikoonahad, Dan Wack, John Fielden, Ibrahim Abdul-Halim
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Patent number: 8179530Abstract: Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including: but not limited to, critical dimension and overlay misregistration; defects and thin film characteristics; critical dimension and defects; critical dimension and thin film characteristics; critical dimension, thin film characteristics and defects; macro defects and micro defects; flatness, thin film characteristics and defects; overlay misregistration and flatness; an implant characteristic and defects; and adhesion and thickness.Type: GrantFiled: July 5, 2010Date of Patent: May 15, 2012Assignee: KLA-Tencor Technologies Corp.Inventors: Ady Levy, Kyle A. Brown, Rodney Smedt, Gary Bultman, Mehrdad Nikoonahad, Dan Wack, John Fielden, Ibrahim Abdul-Halim
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Publication number: 20100271621Abstract: Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including: but not limited to, critical dimension and overlay misregistration; defects and thin film characteristics; critical dimension and defects; critical dimension and thin film characteristics; critical dimension, thin film characteristics and defects; macro defects and micro defects; flatness, thin film characteristics and defects; overlay misregistration and flatness; an implant characteristic and defects; and adhesion and thickness.Type: ApplicationFiled: July 5, 2010Publication date: October 28, 2010Applicant: KLA-TENCOR TECHNOLOGIES CORPORATIONInventors: Ady Levy, Kyle A. Brown, Rodney Smedt, Gary Bultman, Mehrdad Nikoonahad, Dan Wack, John Fielden, Ibrahim Abdul-Halim
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Patent number: 7751046Abstract: Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including, but not limited to, critical dimension and overlay misregistration. In this manner, a measurement device may perform multiple optical and/or non-optical metrology and/or inspection techniques.Type: GrantFiled: March 27, 2003Date of Patent: July 6, 2010Assignee: KLA-Tencor Technologies Corp.Inventors: Ady Levy, Kyle A. Brown, Rodney Smedt, Gary Bultman, Mehrdad Nikoonahad, Dan Wack, John Fielden, Ibrahim Abdulhalim
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Patent number: 7433037Abstract: A periodic structure is illuminated by polychromatic electromagnetic radiation. Radiation from the structure is collected and divided into two rays having different polarization states. The two rays are detected from which one or more parameters of the periodic structure may be derived. In another embodiment, when the periodic structure is illuminated by a polychromatic electromagnetic radiation, the collected radiation from the structure is passed through a polarization element having a polarization plane. The element and the polychromatic beam are controlled so that the polarization plane of the element are at two or more different orientations with respect to the plane of incidence of the polychromatic beam. Radiation that has passed through the element is detected when the plane of polarization is at the two or more positions so that one or more parameters of the periodic structure may be derived from the detected signals.Type: GrantFiled: July 20, 2006Date of Patent: October 7, 2008Assignee: KLA-Tencor Technologies CorporationInventors: Guoheng Zhao, Kenneth P. Gross, Rodney Smedt, Mehrdad Nikoonahad
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Publication number: 20070188745Abstract: A system for simultaneously inspecting the frontsides and backsides of semiconductor wafers for defects is disclosed. The system rotates the semiconductor wafer while the frontside and backside surfaces are generally simultaneously optically scanned for defects. Rotation is induced by providing contact between the beveled edges of the semiconductor wafer and roller bearings rotationally driven by a motor. The wafer is supported in a tilted or semi-upright orientation such that support is provided by gravity. This tilted supporting orientation permits both the frontside and the backside of the wafer to be viewed simultaneously by a frontside inspection device and a backside inspection device.Type: ApplicationFiled: April 11, 2007Publication date: August 16, 2007Applicant: KLA-Tencor CorporationInventor: Rodney Smedt
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Patent number: 7193715Abstract: A method for measuring overlay in semiconductor wafers includes obtaining diffraction based and imaging based measurements of the same target. The two separate measurements are then combined in a way that is consistent to both measurements to obtain an overlay measurement that has high precision and large range.Type: GrantFiled: November 14, 2003Date of Patent: March 20, 2007Assignee: Tokyo Electron LimitedInventors: Rodney Smedt, Abdurrahman Sezginer, Hsu-Ting Huang
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Publication number: 20060290931Abstract: A periodic structure is illuminated by polychromatic electromagnetic radiation. Radiation from the structure is collected and divided into two rays having different polarization states. The two rays are detected from which one or more parameters of the periodic structure may be derived. In another embodiment, when the periodic structure is illuminated by a polychromatic electromagnetic radiation, the collected radiation from the structure is passed through a polarization element having a polarization plane. The element and the polychromatic beam are controlled so that the polarization plane of the element are at two or more different orientations with respect to the plane of incidence of the polychromatic beam. Radiation that has passed through the element is detected when the plane of polarization is at the two or more positions so that one or more parameters of the periodic structure may be derived from the detected signals.Type: ApplicationFiled: July 20, 2006Publication date: December 28, 2006Inventors: Guoheng Zhao, Kenneth Gross, Rodney Smedt, Mehrdad Nikoonahad
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Publication number: 20060232770Abstract: A system for inspecting specimens such as semiconductor wafers is provided. The system provides scanning of dual-sided specimens using a damping arrangement which filters unwanted acoustic and seismic vibration, including an optics arrangement which scans a first portion of the specimen and a translation or rotation arrangement for translating or rotating the specimen to a position where the optics arrangement can scan the remaining portion(s) of the specimen. The system further includes means for stitching the scans together, thereby providing both damping of the specimen and the need for smaller and less expensive optical elements.Type: ApplicationFiled: March 1, 2006Publication date: October 19, 2006Inventors: Paul Sullivan, George Kren, Rodney Smedt, Hans Hansen, David Shortt, Daniel Kavaldjiev, Christopher Bevis
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Publication number: 20060187445Abstract: A system for simultaneously inspecting the frontsides and backsides of semiconductor wafers for defects is disclosed. The system rotates the semiconductor wafer while the frontside and backside surfaces are generally simultaneously optically scanned for defects. Rotation is induced by providing contact between the beveled edges of the semiconductor wafer and roller bearings rotationally driven by a motor. The wafer is supported in a tilted or semi-upright orientation such that support is provided by gravity. This tilted supporting orientation permits both the frontside and the backside of the wafer to be viewed simultaneously by a frontside inspection device and a backside inspection device.Type: ApplicationFiled: April 19, 2006Publication date: August 24, 2006Applicant: KLA-Tencor CorporationInventor: Rodney Smedt
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Publication number: 20050099627Abstract: A periodic structure is illuminated by polychromatic electromagnetic radiation. Radiation from the structure is collected and divided into two rays having different polarization states. The two rays are detected from which one or more parameters of the periodic structure may be derived. In another embodiment, when the periodic structure is illuminated by a poly chromatic electromagnetic radiation, the collected radiation from the structure is passed through a polarization element having a polarization plane. The element and the polychromatic beam are controlled so that the polarization plane of the element are at two or more different orientations with respect to the plane of incidence of the polychromatic beam. Radiation that has passed through the element is detected when the plane of polarization is at the two or more positions so that one or more parameters of the periodic structure may be derived from the detected signals.Type: ApplicationFiled: December 17, 2004Publication date: May 12, 2005Inventors: Guoheng Zhao, Kenneth Gross, Rodney Smedt, Mehrdad Nikoonahad