Patents by Inventor Roel Gronheid
Roel Gronheid has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240053721Abstract: A system includes a wafer shape metrology sub-system configured to perform one or more shape measurements on post-bonding pairs of wafers. The system includes a controller communicatively coupled to the wafer shape metrology sub-system. The controller receives a set of measured distortion patterns. The controller applies a bonder control model to the measured distortion patterns to determine a set of overlay distortion signatures. The bonder control model is made up of a set of orthogonal wafer signatures that represent the achievable adjustments. The controller determines whether the set of overlay distortion signatures associated with the measured distortion patterns are outside tolerance limits provides one or more feedback adjustments to the bonder tool.Type: ApplicationFiled: October 9, 2023Publication date: February 15, 2024Inventors: Franz Zach, Mark D. Smith, Roel Gronheid
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Publication number: 20240035810Abstract: Systems and methods for generating volumetric data are disclosed. Such systems and methods may include scanning a sample at a plurality of focal planes located along a depth direction of the sample. Such systems and methods may include generating, via a detector of a metrology sub-system, a plurality of images of a volumetric field of view of the sample at the plurality of focal planes. Such systems and methods may include aggregating the plurality of images to generate volumetric data of the volumetric field of view of the sample. The metrology sub-system may include a Linnik interferometer.Type: ApplicationFiled: August 1, 2022Publication date: February 1, 2024Inventors: Amnon Manassen, Yoav Grauer, Shlomo Eisenbach, Stephen Hiebert, Avner Safrani, Roel Gronheid
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Patent number: 11782411Abstract: A system includes a wafer shape metrology sub-system configured to perform one or more shape measurements on post-bonding pairs of wafers. The system includes a controller communicatively coupled to the wafer shape metrology sub-system. The controller receives a set of measured distortion patterns. The controller applies a bonder control model to the measured distortion patterns to determine a set of overlay distortion signatures. The bonder control model is made up of a set of orthogonal wafer signatures that represent the achievable adjustments. The controller determines whether the set of overlay distortion signatures associated with the measured distortion patterns are outside tolerance limits provides one or more feedback adjustments to the bonder tool.Type: GrantFiled: January 31, 2022Date of Patent: October 10, 2023Assignee: KLA CorporationInventors: Franz Zach, Mark D. Smith, Roel Gronheid
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Publication number: 20230099105Abstract: Metrology methods and targets are provided for reducing or eliminating a difference between a device pattern position and a target pattern position while maintaining target printability, process compatibility and optical contrast—in both imaging and scatterometry metrology. Pattern placement discrepancies may be reduced by using sub-resolved assist features in the mask design which have a same periodicity (fine pitch) as the periodic structure and/or by calibrating the measurement results using PPE (pattern placement error) correction factors derived by applying learning procedures to specific calibration terms, in measurements and/or simulations. Metrology targets are disclosed with multiple periodic structures at the same layer (in addition to regular target structures), e.g., in one or two layers, which are used to calibrate and remove PPE, especially when related to asymmetric effects such as scanner aberrations, off-axis illumination and other error sources.Type: ApplicationFiled: December 6, 2022Publication date: March 30, 2023Inventors: Yoel Feler, Vladimir Levinski, Roel Gronheid, Sharon Aharon, Evgeni Gurevich, Anna Golotsvan, Mark Ghinovker
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Publication number: 20230032406Abstract: A wafer shape metrology system includes a wafer shape metrology sub-system configured to perform one or more stress-free shape measurements on a bonded pair of wafers, where the bonded pair of wafers are bonded with a bonding tool. The wafer shape metrology sub-system includes a controller communicatively coupled to the wafer shape metrology sub-system. The controller is configured to receive stress-free shape measurements from the wafer shape sub-system; convert the stress-free shape measurements into an overlay distortion pattern; detect one or more localized deviations in the bonded pair of wafers in order to identify one or more contaminant particles on the bonding tool; and report the one or more localized deviations in the bonded pair of wafers.Type: ApplicationFiled: January 31, 2022Publication date: February 2, 2023Inventors: Franz Zach, Mark D. Smith, Roel Gronheid
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Publication number: 20230035201Abstract: A system includes a wafer shape metrology sub-system configured to perform one or more shape measurements on post-bonding pairs of wafers. The system includes a controller communicatively coupled to the wafer shape metrology sub-system. The controller receives a set of measured distortion patterns. The controller applies a bonder control model to the measured distortion patterns to determine a set of overlay distortion signatures. The bonder control model is made up of a set of orthogonal wafer signatures that represent the achievable adjustments. The controller determines whether the set of overlay distortion signatures associated with the measured distortion patterns are outside tolerance limits provides one or more feedback adjustments to the bonder tool.Type: ApplicationFiled: January 31, 2022Publication date: February 2, 2023Inventors: Franz Zach, Mark D. Smith, Roel Gronheid
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Publication number: 20230037093Abstract: A focus-sensitive metrology target may be formed and read-out by a fabrication tool. A resulting overlay signal may be translated into a focus offset by comparison to a previously-determined calibration curve. One or more translated signals may be fed back to the fabrication tool for focus correction or used for prediction of on-device overlay (correction of overlay metrology results). In one embodiment, focus and overlay may be measured using a single target, where one portion of the target is formed on a first layer and includes a focus-sensitive design, and where another portion of the target is formed on a second layer and includes a relatively less focus-sensitive design. In some embodiments, a relative difference in focus response may be used to estimate an impact of focus error on device overlay and calculate non-zero offset contributions.Type: ApplicationFiled: October 3, 2022Publication date: February 2, 2023Inventors: Roel Gronheid, Xuemei Chen
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Publication number: 20230030116Abstract: A wafer shape metrology system includes a wafer shape metrology sub-system configured to perform stress-free shape measurements on an active wafer, a carrier wafer, and a bonded device wafer. The active wafer includes functioning logic circuitry and the carrier wafer is electrically passive. The wafer shape metrology system includes a controller communicatively coupled to the wafer shape metrology sub-system. The controller is configured to receive stress-free shape measurements; determine overlay distortion between features on the active wafer and the carrier wafer; and convert the overlay distortion to a feed-forward correction for one or more lithographic scanners. The controller is also configured to determine a control range for a bonder or lithography scanner; predict an overlay distortion pattern; calculate an optimal control signature based on a minimal achievable overlay; and provide a feed-forward correction to the bonder or lithography scanner based on the calculated optimal control signature.Type: ApplicationFiled: January 31, 2022Publication date: February 2, 2023Inventors: Franz Zach, Mark D. Smith, Roel Gronheid
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Patent number: 11537043Abstract: Metrology methods and targets are provided for reducing or eliminating a difference between a device pattern position and a target pattern position while maintaining target printability, process compatibility and optical contrast—in both imaging and scatterometry metrology. Pattern placement discrepancies may be reduced by using sub-resolved assist features in the mask design which have a same periodicity (fine pitch) as the periodic structure and/or by calibrating the measurement results using PPE (pattern placement error) correction factors derived by applying learning procedures to specific calibration terms, in measurements and/or simulations. Metrology targets are disclosed with multiple periodic structures at the same layer (in addition to regular target structures), e.g., in one or two layers, which are used to calibrate and remove PPE, especially when related to asymmetric effects such as scanner aberrations, off-axis illumination and other error sources.Type: GrantFiled: January 28, 2021Date of Patent: December 27, 2022Assignee: KLA-TENCOR CORPORATIONInventors: Yoel Feler, Vladimir Levinski, Roel Gronheid, Sharon Aharon, Evgeni Gurevich, Anna Golotsvan, Mark Ghinovker
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Patent number: 11460783Abstract: A focus-sensitive metrology target may be formed and read-out by a fabrication tool. A resulting overlay signal may be translated into a focus offset by comparison to a previously-determined calibration curve. One or more translated signals may be fed back to the fabrication tool for focus correction or used for prediction of on-device overlay (correction of overlay metrology results). In one embodiment, focus and overlay may be measured using a single target, where one portion of the target is formed on a first layer and includes a focus-sensitive design, and where another portion of the target is formed on a second layer and includes a relatively less focus-sensitive design. In some embodiments, a relative difference in focus response may be used to estimate an impact of focus error on device overlay and calculate non-zero offset contributions.Type: GrantFiled: January 7, 2021Date of Patent: October 4, 2022Assignee: KLA CorporationInventors: Roel Gronheid, Xuemei Chen
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Publication number: 20220214625Abstract: A focus-sensitive metrology target may be formed and read-out by a fabrication tool. A resulting overlay signal may be translated into a focus offset by comparison to a previously-determined calibration curve. One or more translated signals may be fed back to the fabrication tool for focus correction or used for prediction of on-device overlay (correction of overlay metrology results). In one embodiment, focus and overlay may be measured using a single target, where one portion of the target is formed on a first layer and includes a focus-sensitive design, and where another portion of the target is formed on a second layer and includes a relatively less focus-sensitive design. In some embodiments, a relative difference in focus response may be used to estimate an impact of focus error on device overlay and calculate non-zero offset contributions.Type: ApplicationFiled: January 7, 2021Publication date: July 7, 2022Applicant: KLA CorporationInventors: Roel Gronheid, Xuemei Chen
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Patent number: 11092893Abstract: An inspection-sensitive additive can improve inspection of photoresist on semiconductor wafers. The inspection-sensitive additive can be used to stain the photoresist or can be deposited as a layer on the photoresist. The inspection-sensitive additive can have a k-value that is greater than 20% larger than a photoresist k-value of the photoresist layer for an inspection wavelength between 120 nm and 950 nm.Type: GrantFiled: July 22, 2019Date of Patent: August 17, 2021Assignee: KLA CorporationInventors: Andrew Cross, Roel Gronheid
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Publication number: 20210149296Abstract: Metrology methods and targets are provided for reducing or eliminating a difference between a device pattern position and a target pattern position while maintaining target printability, process compatibility and optical contrast—in both imaging and scatterometry metrology. Pattern placement discrepancies may be reduced by using sub-resolved assist features in the mask design which have a same periodicity (fine pitch) as the periodic structure and/or by calibrating the measurement results using PPE (pattern placement error) correction factors derived by applying learning procedures to specific calibration terms, in measurements and/or simulations. Metrology targets are disclosed with multiple periodic structures at the same layer (in addition to regular target structures), e.g., in one or two layers, which are used to calibrate and remove PPE, especially when related to asymmetric effects such as scanner aberrations, off-axis illumination and other error sources.Type: ApplicationFiled: January 28, 2021Publication date: May 20, 2021Inventors: Yoel Feler, Vladimir Levinski, Roel Gronheid, Sharon Aharon, Evgeni Gurevich, Anna Golotsvan, Mark Ghinovker
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Patent number: 10901325Abstract: Methods are provided for designing metrology targets and estimating the uncertainty error of metrology metric values with respect to stochastic noise such as line properties (e.g., line edge roughness, LER). Minimal required dimensions of target elements may be derived from analysis of the line properties and uncertainty error of metrology measurements, by either CDSEM (critical dimension scanning electron microscopy) or optical systems, with corresponding targets. The importance of this analysis is emphasized in view of the finding that stochastic noise may have increased importance with when using more localized models such as CPE (correctables per exposure). The uncertainty error estimation may be used for target design, enhancement of overlay estimation and evaluation of measurement reliability in multiple contexts.Type: GrantFiled: February 27, 2018Date of Patent: January 26, 2021Assignee: KLA-Tencor CorporationInventors: Evgeni Gurevich, Michael E. Adel, Roel Gronheid, Yoel Feler, Vladimir Levinski, Dana Klein, Sharon Aharon
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Patent number: 10824078Abstract: An example embodiment relates to a method for making a mask layer. The method may include providing a patterned layer on a substrate, the patterned layer including at least a first set of lines of an organic material of a first nature, the lines having a line height, a first line width roughness, and being separated either by voids or by a material of a second nature. The method may further include infiltrating at least a top portion of the first set of lines with a metal or ceramic material. The method may further include removing the organic material by oxidative plasma etching, thereby forming a second set of lines of metal or ceramic material on the substrate, the second set of lines having a second line width roughness, smaller than the first line width roughness.Type: GrantFiled: November 15, 2017Date of Patent: November 3, 2020Assignees: Imec vzw, Katholieke Universiteit LeuvenInventors: Roel Gronheid, Arjun Singh, Werner Knaepen
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Patent number: 10741394Abstract: A method for forming a film with an annealing step and a deposition step is disclosed. The method comprises an annealing step for inducing self-assembly or alignment within a polymer. The method also comprises a selective deposition step in order to enable selective deposition on a polymer.Type: GrantFiled: January 23, 2019Date of Patent: August 11, 2020Assignees: ASM IP HOLDING B.V., IMEC VZW, KATHOLIEKE UNIVERSITEIT LEUVENInventors: Jan Willem Maes, Werner Knaepen, Roel Gronheid, Arjun Singh
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Patent number: 10720336Abstract: A mask structure and a method for manufacturing a mask structure for a lithography process is provided. The method includes providing a substrate covered with an absorber layer on a side thereof; providing a patterned layer over the absorber layer, the patterned layer comprising at least one opening; and forming at least one assist mask feature in the at least one opening, wherein the at least one assist mask feature is formed by performing a directed self-assembly (DSA) patterning process comprising providing a BCP material in the at least one opening and inducing phase separation of a BCP material into a first component and a second component, the first component being the at least one assist mask feature and being periodically distributed with respect to the second component.Type: GrantFiled: August 30, 2018Date of Patent: July 21, 2020Assignees: IMEC VZW, Katholieke Universiteit Leuven, KU LEUVEN R&DInventors: Emily Gallagher, Roel Gronheid, Jan Doise, Iacopo Mochi
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Publication number: 20200183283Abstract: An inspection-sensitive additive can improve inspection of photoresist on semiconductor wafers. The inspection-sensitive additive can be used to stain the photoresist or can be deposited as a layer on the photoresist. The inspection-sensitive additive can have a k-value that is greater than 20% larger than a photoresist k-value of the photoresist layer for an inspection wavelength between 120 nm and 950 nm.Type: ApplicationFiled: July 22, 2019Publication date: June 11, 2020Inventors: Andrew Cross, Roel Gronheid
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Patent number: 10551741Abstract: A method of forming a directed self-assembled (DSA) layer on a substrate by: providing a substrate; applying a layer comprising a self-assembly material on the substrate; and annealing of the self-assembly material of the layer to form a directed self-assembled layer by providing a controlled temperature and gas environment around the substrate. The controlled gas environment comprises molecules comprising an oxygen element with a partial pressure between 10-2000 Pa.Type: GrantFiled: April 7, 2017Date of Patent: February 4, 2020Assignees: ASM IP HOLDING B.V., IMEC vzwInventors: Werner Knaepen, Jan Willem Maes, Maarten Stokhof, Roel Gronheid, Hari Pathangi Sriraman
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Publication number: 20190250504Abstract: Metrology methods and targets are provided for reducing or eliminating a difference between a device pattern position and a target pattern position while maintaining target printability, process compatibility and optical contrast—in both imaging and scatterometry metrology. Pattern placement discrepancies may be reduced by using sub-resolved assist features in the mask design which have a same periodicity (fine pitch) as the periodic structure and/or by calibrating the measurement results using PPE (pattern placement error) correction factors derived by applying learning procedures to specific calibration terms, in measurements and/or simulations. Metrology targets are disclosed with multiple periodic structures at the same layer (in addition to regular target structures), e.g., in one or two layers, which are used to calibrate and remove PPE, especially when related to asymmetric effects such as scanner aberrations, off-axis illumination and other error sources.Type: ApplicationFiled: April 16, 2018Publication date: August 15, 2019Inventors: Yoel Feler, Vladimir Levinski, Roel Gronheid, Sharon Aharon, Evgeni Gurevich, Anna Golotsvan, Mark Ghinovker