Patents by Inventor Roger Klas Malmhall
Roger Klas Malmhall has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8330240Abstract: A multi-state current-switching magnetic memory element has a magnetic tunneling junction (MTJ), for storing more than one bit of information. The MTJ includes a fixed layer, a barrier layer, and a non-uniform free layer. In one embodiment, having 2 bits per cell, when one of four different levels of current is applied to the memory element, the applied current causes the non-uniform free layer of the MTJ to switch to one of four different magnetic states. The broad switching current distribution of the MTJ is a result of the broad grain size distribution of the non-uniform free layer.Type: GrantFiled: August 18, 2011Date of Patent: December 11, 2012Assignee: Avalanche Technology, Inc.Inventors: Rajiv Yadav Ranjan, Parviz Keshtbod, Roger Klas Malmhall
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Publication number: 20120230095Abstract: A non-volatile magnetic memory element includes a number of layers one of which is a free layer which is graded. The graded free layer may include various elements with each element having a different anisotropy or it may include nonmagnetic compounds and magnetic regions with the non-magnetic compounds forming graded contents forming a unique shape such as cone shaped, diamond shaped or other shapes and whose thickness is based on the reactivity of the magnetic compound.Type: ApplicationFiled: May 21, 2012Publication date: September 13, 2012Applicant: AVALANCHE TECHNOLOGY, INC.Inventors: Rajiv Yadav Ranjan, Parviz Keshtbod, Roger Klas Malmhall
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Publication number: 20120217595Abstract: A STTMRAM element includes a magnetization layer made of a first free layer and a second free layer, separated by a non-magnetic separation layer (NMSL), with the first and second free layers each having in-plane magnetizations that act on each other through anti-parallel coupling. The direction of the magnetization of the first and second free layers each is in-plane prior to the application of electrical current to the STTMRAM element and thereafter, the direction of magnetization of the second free layer becomes substantially titled out-of-plane and the direction of magnetization of the first free layer switches. Upon electrical current being discontinued to the STTMRAM element, the direction of magnetization of the second free layer remains in a direction that is substantially opposite to that of the first free layer.Type: ApplicationFiled: November 4, 2011Publication date: August 30, 2012Applicant: AVALANCHE TECHNOLOGY, INC.Inventors: Yuchen Zhou, Yiming Huai, Jing Zhang, Rajiv Yadav Ranjan, Roger Klas Malmhall
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Low-crystallization temperature MTJ for Spin-Transfer Torque Magnetic Random Access Memory (STTMRAM)
Publication number: 20120188818Abstract: A spin-torque transfer memory random access memory (STTMRAM) element is disclosed and has a fixed layer, a barrier layer formed upon the fixed layer, and a free layer comprised of a low-crystallization temperature alloy of CoFeB—Z where Z is below 25 atomic percent of one or more of titanium, (Ti), yittrium (Y), zirconium (Zr), and vanadium (V), wherein during a write operation, a bidirectional electric current is applied across the STTMRAM element to switch the magnetization of the free layer between parallel and anti-parallel states relative to the magnetization of the fixed layer.Type: ApplicationFiled: April 2, 2012Publication date: July 26, 2012Applicant: AVALANCHE TECHNOLOGY, INC.Inventors: Rajiv Yadav Ranjan, Roger Klas Malmhall -
Publication number: 20120146167Abstract: A spin-torque transfer magnetic random access memory (STTMRAM) element employed to store a state based on the magnetic orientation of a free layer, the STTMRAM element is made of a first perpendicular free layer (PFL) including a first perpendicular enhancement layer (PEL). The first PFL is formed on top of a seed layer. The STTMRAM element further includes a barrier layer formed on top of the first PFL and a second perpendicular reference layer (PRL) that has a second PEL, the second PRL is formed on top of the barrier layer. The STTMRAM element further includes a capping layer that is formed on top of the second PRL.Type: ApplicationFiled: October 19, 2011Publication date: June 14, 2012Applicant: Avalanche TechnologyInventors: Yiming Huai, Yuchen Zhou, Jing Zhang, Roger Klas Malmhall, Ioan Tudosa, Rajiv Yadav Ranjan
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Patent number: 8169821Abstract: A spin-torque transfer memory random access memory (STTMRAM) element is disclosed and has a fixed layer, a barrier layer formed upon the fixed layer, and a free layer comprised of a low-crystallization temperature alloy of CoFeB—Z where Z is below 25 atomic percent of one or more of titanium, (Ti), yittrium (Y), zirconium (Zr), and vanadium (V), wherein during a write operation, a bidirectional electric current is applied across the STTMRAM element to switch the magnetization of the free layer between parallel and anti-parallel states relative to the magnetization of the fixed layer.Type: GrantFiled: October 19, 2010Date of Patent: May 1, 2012Assignee: Avalanche Technology, Inc.Inventors: Rajiv Yadav Ranjan, Roger Klas Malmhall
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Publication number: 20120087185Abstract: A spin-transfer torque magnetic random access memory (STTMRAM) element is configured to store a state when electrical current is applied thereto. The STTMRAM element includes first and second free layers, each of which having an associated direction of magnetization defining the state of the STTMRAM element. Prior to the application of electrical current to the STTMRAM element, the direction of the magnetization of the first and second free layers each is in-plane and after the application of electrical current to the STTMRAM element, the direction of magnetization of the second free layer becomes substantially titled out-of-plane and the direction of magnetization of the first free layer switches. Upon electrical current being discontinued, the direction of magnetization of the second free layer remains in a direction that is substantially opposite to that of the first free layer.Type: ApplicationFiled: February 25, 2011Publication date: April 12, 2012Applicant: AVALANCHE TECHNOLOGY, INC.Inventors: Yuchen Zhou, Yiming Huai, Rajiv Yadav Ranjan, Roger Klas Malmhall
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Publication number: 20120063218Abstract: A spin-torque transfer memory random access memory (STTMRAM) element includes a composite fixed layer formed on top of a substrate and a tunnel layer formed upon the fixed layer and a composite free layer formed upon the tunnel barrier layer, the magnetization direction of each of the composite free layer and fixed layer being substantially perpendicular to the plane of the substrate. The composite layers are made of multiple repeats of a bi-layer unit which consists of a non-magnetic insulating layer and magnetic layer with thicknesses adjusted in a range that makes the magnetization have a preferred direction perpendicular to film plane.Type: ApplicationFiled: September 2, 2011Publication date: March 15, 2012Applicant: Avalanche Technology, Inc.Inventors: Yiming Huai, Jing Zhang, Rajiv Yadav Ranjan, Yuchen Zhou, Roger Klas Malmhall, Ioan Tudosa
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Publication number: 20120025338Abstract: A non-volatile magnetic memory element includes a number of layers one of which is a free layer which is graded. The graded free layer may include various elements with each element having a different anisotropy or it may include nonmagnetic compounds and magnetic regions with the non-magnetic compounds forming graded contents forming a unique shape such as cone shaped, diamond shaped or other shapes and whose thickness is based on the reactivity of the magnetic compound.Type: ApplicationFiled: October 5, 2011Publication date: February 2, 2012Applicant: AVALANCHE TECHNOLOGY, INC.Inventors: Rajiv Yadav Ranjan, Parviz Keshtbod, Roger Klas Malmhall
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Publication number: 20120026785Abstract: A non-volatile magnetic memory element includes a number of layers one of which is a free layer which is graded. The graded free layer may include various elements with each element having a different anisotropy or it may include nonmagnetic compounds and magnetic regions with the non-magnetic compounds forming graded contents forming a unique shape such as cone shaped, diamond shaped or other shapes and whose thickness is based on the reactivity of the magnetic compound.Type: ApplicationFiled: October 5, 2011Publication date: February 2, 2012Applicant: AVALANCHE TECHNOLOGY, INC.Inventors: Rajiv Yadav Ranjan, Parviz Keshtbod, Roger Klas Malmhall
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Publication number: 20120018823Abstract: A spin transfer torque memory random access memory (STTMRAM) element is capable of switching states when electrical current is applied thereto for storing data and includes the following layers. An anti-ferromagnetic layer, a fixed layer formed on top of the anti-ferromagnetic layer, a barrier layer formed on top of the second magnetic layer of the fixed layer, and a free layer including a first magnetic layer formed on top of the barrier layer, a second magnetic layer formed on top of the first magnetic layer, a non-magnetic insulating layer formed on top of the second magnetic layer and a third magnetic layer formed on top of the non-magnetic insulating layer. A capping layer is formed on top of the non-magnetic insulating layer.Type: ApplicationFiled: May 2, 2011Publication date: January 26, 2012Applicant: AVALANCHE TECHNOLOGY, INC.Inventors: Yiming Huai, Rajiv Yadav Ranjan, Ioan Tudosa, Roger Klas Malmhall, Yuchen Zhou
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Publication number: 20110305078Abstract: A multi-state current-switching magnetic memory element has a magnetic tunneling junction (MTJ), for storing more than one bit of information. The MTJ includes a fixed layer, a barrier layer, and a non-uniform free layer. In one embodiment, having 2 bits per cell, when one of four different levels of current is applied to the memory element, the applied current causes the non-uniform free layer of the MTJ to switch to one of four different magnetic states. The broad switching current distribution of the MTJ is a result of the broad grain size distribution of the non-uniform free layer.Type: ApplicationFiled: August 24, 2011Publication date: December 15, 2011Applicant: AVALANCHE TECHNOLOGY, INC.Inventors: Rajiv Yadav Ranjan, Parviz Keshtbod, Roger Klas Malmhall
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Publication number: 20110303998Abstract: A multi-state current-switching magnetic memory element has a magnetic tunneling junction (MTJ), for storing more than one bit of information. The MTJ includes a fixed layer, a barrier layer, and a non-uniform free layer. In one embodiment, having 2 bits per cell, when one of four different levels of current is applied to the memory element, the applied current causes the non-uniform free layer of the MTJ to switch to one of four different magnetic states. The broad switching current distribution of the MTJ is a result of the broad grain size distribution of the non-uniform free layer.Type: ApplicationFiled: August 18, 2011Publication date: December 15, 2011Applicant: AVALANCHE TECHNOLOGY, INC.Inventors: Rajiv Yadav Ranjan, Parviz Keshtbod, Roger Klas Malmhall
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Patent number: 8063459Abstract: A non-volatile magnetic memory element includes a number of layers one of which is a free layer which is graded. The graded free layer may include various elements with each element having a different anisotropy or it may include nonmagnetic compounds and magnetic regions with the non-magnetic compounds forming graded contents forming a unique shape such as cone shaped, diamond shaped or other shapes and whose thickness is based on the reactivity of the magnetic compound.Type: GrantFiled: July 12, 2007Date of Patent: November 22, 2011Assignee: Avalanche Technologies, Inc.Inventors: Rajiv Yadav Ranjan, Parviz Keshtbod, Roger Klas Malmhall
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Patent number: 8018011Abstract: A multi-state current-switching magnetic memory element has a magnetic tunneling junction (MTJ), for storing more than one bit of information. The MTJ includes a fixed layer, a barrier layer, and a non-uniform free layer. In one embodiment, having 2 bits per cell, when one of four different levels of current is applied to the memory element, the applied current causes the non-uniform free layer of the MTJ to switch to one of four different magnetic states. The broad switching current distribution of the MTJ is a result of the broad grain size distribution of the non-uniform free layer.Type: GrantFiled: September 24, 2007Date of Patent: September 13, 2011Assignee: Avalanche Technology, Inc.Inventors: Rajiv Yadav Ranjan, Parviz Keshtbod, Roger Klas Malmhall
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Publication number: 20110103143Abstract: A multi-state low-current-switching magnetic memory element (magnetic memory element) comprising a free layer, two stacks, and a magnetic tunneling junction is disclosed. The stacks and magnetic tunneling junction are disposed upon surfaces of the free layer, with the magnetic tunneling junction located between the stacks. The stacks pin magnetic domains within the free layer, creating a free layer domain wall. A current passed from stack to stack pushes the domain wall, repositioning the domain wall within the free layer. The position of the domain wall relative to the magnetic tunnel junction corresponds to a unique resistance value, and passing current from a stack to the magnetic tunnel junction reads the magnetic memory element's resistance. Thus, unique memory states may be achieved by moving the domain wall.Type: ApplicationFiled: January 7, 2011Publication date: May 5, 2011Applicant: AVALANCHE TECHNOLOGY INC.Inventors: Rajiv Yadav RANJAN, Roger Klas MALMHALL, Parviz KESHTBOD
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Publication number: 20110096593Abstract: A multi-state low-current-switching magnetic memory element (magnetic memory element) comprising a free layer, two stacks, and a magnetic tunneling junction is disclosed. The stacks and magnetic tunneling junction are disposed upon surfaces of the free layer, with the magnetic tunneling junction located between the stacks. The stacks pin magnetic domains within the free layer, creating a free layer domain wall. A current passed from stack to stack pushes the domain wall, repositioning the domain wall within the free layer. The position of the domain wall relative to the magnetic tunnel junction corresponds to a unique resistance value, and passing current from a stack to the magnetic tunnel junction reads the magnetic memory element's resistance. Thus, unique memory states may be achieved by moving the domain wall.Type: ApplicationFiled: January 5, 2011Publication date: April 28, 2011Applicant: AVALANCHE TECHNOLOGY INC.Inventors: Rajiv Yadav RANJAN, Roger Klas MALMHALL, Parviz KESHTBOD
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Publication number: 20110089511Abstract: A method of making a magnetic random access memory cell includes forming a magnetic tunnel junction (MTJ) on top of a wafer, depositing oxide on top of the MTJ, depositing a photo-resist layer on top of the oxide layer, forming a trench in the photo-resist layer and oxide layer where the trench has a width that is substantially the same as that of the MTJ. Then, the photo-resist layer is removed and a hard mask layer is deposited on top of the oxide layer in the trench and the wafer is planarized to remove the portion of the hard mask layer that is not in the trench to substantially level the top of oxide layer and the hard layer on the wafer. The remaining oxide layer is etched and the the MTJ is etched to remove the portion of the MTJ which is not covered by the hard mask layer.Type: ApplicationFiled: December 21, 2010Publication date: April 21, 2011Applicant: AVALANCHE TECHNOLOGY, INC.Inventors: Parviz KESHTBOD, Roger Klas MALMHALL, Rajiv Yadav RANJAN
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Patent number: 7869266Abstract: A multi-state low-current-switching magnetic memory element (magnetic memory element) comprising a free layer, two stacks, and a magnetic tunneling junction is disclosed. The stacks and magnetic tunneling junction are disposed upon surfaces of the free layer, with the magnetic tunneling junction located between the stacks. The stacks pin magnetic domains within the free layer, creating a free layer domain wall. A current passed from stack to stack pushes the domain wall, repositioning the domain wall within the free layer. The position of the domain wall relative to the magnetic tunnel junction corresponds to a unique resistance value, and passing current from a stack to the magnetic tunnel junction reads the magnetic memory element's resistance. Thus, unique memory states may be achieved by moving the domain wall.Type: GrantFiled: October 21, 2008Date of Patent: January 11, 2011Assignee: Avalanche Technology, Inc.Inventors: Rajiv Yadav Ranjan, Roger Klas Malmhall, Parviz Keshtbod
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Publication number: 20100096716Abstract: A spin-torque transfer memory random access memory (STTMRAM) element includes a fixed layer formed on top of a substrate and a a tunnel layer formed upon the fixed layer and a composite free layer formed upon the tunnel barrier layer and made of an iron platinum alloy with at least one of X or Y material, X being from a group consisting of: boron (B), phosphorous (P), carbon (C), and nitride (N) and Y being from a group consisting of: tantalum (Ta), titanium (Ti), niobium (Nb), zirconium (Zr), tungsten (W), silicon (Si), copper (Cu), silver (Ag), aluminum (Al), chromium (Cr), tin (Sn), lead (Pb), antimony (Sb), hafnium (Hf) and bismuth (Bi), molybdenum (Mo) or rhodium (Ru), the magnetization direction of each of the composite free layer and fixed layer being substantially perpendicular to the plane of the substrate.Type: ApplicationFiled: December 17, 2009Publication date: April 22, 2010Applicant: YADAV TECHNOLOGY INC.Inventors: Rajiv Yadav RANJAN, Roger Klas MALMHALL