Abstract: A stress enhanced MOS transistor and methods for its fabrication are provided. In one embodiment the method comprises forming a gate electrode overlying and defining a channel region in a monocrystalline semiconductor substrate. A trench having a side surface facing the channel region is etched into the monocrystalline semiconductor substrate adjacent the channel region. The trench is filled with a second monocrystalline semiconductor material having a first concentration of a substitutional atom and with a third monocrystalline semiconductor material having a second concentration of the substitutional atom. The second monocrystalline semiconductor material is epitaxially grown to have a wall thickness along the side surface sufficient to exert a greater stress on the channel region than the stress that would be exerted by a monocrystalline semiconductor material having the second concentration if the trench was filled by the third monocrystalline material alone.

Abstract: The movement and mixing of microdroplets through microchannels is described employing silicon-based microscale devices, comprising microdroplet transport channels, reaction regions, electrophoresis modules, and radiation detectors. The discrete droplets are differentially heated and propelled through etched channels. Electronic components are fabricated on the same substrate material, allowing sensors and controlling circuitry to be incorporated in the same device.

Abstract: The movement and mixing of microdroplets through microchannels is described employing silicon-based microscale devices, comprising microdroplet transport channels, reaction regions, electrophoresis modules, and radiation detectors. The discrete droplets are differentially heated and propelled through etched channels. Electronic components are fabricated on the same substrate material, allowing sensors and controlling circuitry to be incorporated in the same device.