Abstract: Topcoat compositions are provided that can be used in immersion lithography to form photoresist patterns. The topcoat compositions include a polymer system that includes a matrix polymer and a surface active polymer. The matrix polymer is present in the composition in a larger proportion by weight than the surface active polymer, and the surface active polymer has a lower surface energy than a surface energy of the matrix polymer. A solvent system includes a first organic solvent chosen from gamma-butyrolactone and/or gamma-valerolactone, and a second organic solvent. The first organic solvent has a higher surface energy than a surface energy of the surface active polymer, and a higher boiling point than a boiling point of the second organic solvent.

Abstract: A photoacid generator compound has the formula (I): [A-(CHR1)p]k-(L)-(CH2)m—(C(R2)2)n—SO3?Z+??(I) wherein A is a substituted or unsubstituted, monocyclic, polycyclic, or fused polycyclic C5 or greater cycloaliphatic group optionally comprising O, S, N, F, or a combination comprising at least one of the foregoing, R1 is H, a single bond, or a substituted or unsubstituted C1-30 alkyl group, wherein when R1 is a single bond, R1 is covalently bonded to a carbon atom of A, each R2 is independently H, F, or C1-4 fluoroalkyl, wherein at least one R2 is not hydrogen, L is a linking group comprising a sulfonate group, a sulfonamide group, or a C1-30 sulfonate or sulfonamide-containing group, Z is an organic or inorganic cation, p is an integer of 0 to 10, k is 1 or 2, m is an integer of 0 or greater, and n is an integer of 1 or greater.

Abstract: A method for depositing a Group 1b/gallium/(optional indium)/Group 6a material using a gallium formulated ink, comprising, as initial components: (a) a Group 1b/gallium/(optional indium)/Group 6a system which comprises a combination of, as initial components: a gallium component; a selenium component; an organic chalcogenide component; a Group 1b component comprising, as an initial component, at least one of CuCl2 and Cu2O; optionally, a bidentate thiol component; optionally, an indium component; and, (b) a liquid carrier component; depositing the gallium formulated ink on the substrate; heating the deposited gallium formulated ink to eliminate the gallium carrier, the first liquid carrier, the second liquid carrier and the, optional, third liquid carrier leaving a Group 1b/gallium/(optional indium)/Group 6a material on the substrate; and, optionally, annealing the Group 1b/gallium/(optional indium)/Group 6a material.

Abstract: A molecular glass compound comprises a vinyl ether adduct of an aromatic vinyl ether of formula C(R1)2?C(R2)—O-(L)n-Ar1, and a calix[4]arene, wherein R1 and R2 are each independently a single bond, H, C1-20 alkyl, C1-20 haloalkyl, C6-20 aryl, C6-20 haloaryl, C7-20 aralkyl, or C7-20 haloaralkyl, L is a C1-20 linking group, n is 0 or 1, and Ar1 is a halo-containing monocyclic, or substituted or unsubstituted polycyclic or fused polycyclic C6-20 aromatic-containing moiety, wherein R1 and R2 are connected to Ar1 when either or both of R1 and R2 is a single bond and n is 0. A photoresist, comprising the molecular glass compound, a solvent, and a photoacid generator, a coated substrate, comprising (a) a substrate having one or more layers to be patterned on a surface thereof; and (b) a layer of a photoresist composition over the one or more layers to be patterned, and a method of forming the molecular glass compound, are also disclosed.

Abstract: A method for preparing a Group 1a-1b-3a-6a material using a selenium/Group 1b ink comprising, as initial components: a selenium component comprising selenium, an organic chalcogenide component having a formula selected from RZ—Z?R? and R2—SH, a Group 1b component and a liquid carrier; wherein Z and Z? are each independently selected from sulfur, selenium and tellurium; wherein R is selected from H, C1-20 alkyl group, a C6-20 aryl group, a C1-20 alkylhydroxy group, an arylether group and an alkylether group; wherein R? and R2 are selected from a C1-20 alkyl group, a C6-20 aryl group, a C1-20 alkylhydroxy group, an arylether group and an alkylether group; and wherein the selenium/Group 1b ink is a stable dispersion.

Abstract: A method for preparing a Group 1a-1b-3a-6a material using a selenium ink comprising a chemical compound having a formula RZ—Sex—Z?R? stably dispersed in a liquid carrier is provided, wherein the selenium ink is hydrazine free and hydrazinium free.