Abstract: An arrangement for joining two joining members includes a first part having a support surface, a first carrier element configured to carry at least one foil, a transportation unit configured to arrange the first carrier element such that the foil is arranged above the support surface in a vertical direction, and a second part configured to exert pressure to a joining stack, when the joining stack is arranged on the support surface. The joining stack includes a first joining member arranged on the support surface, a second joining member, and an electrically conductive connection layer arranged between the joining members. When pressure is exerted on the joining stack, the foil is arranged between the second part and the joining stack and is pressed onto the joining stack and the joining stack is pressed onto the first part, compressing the connection layer and forming a bond between the joining members.

Abstract: A powder carrier, to which a powder layer containing a metal powder is applied, is provided by an automatic powder carrier feed. A first joining partner is pressed onto the powder layer located on the powder carrier so as to bond a powder layer portion to the first joining partner. The first joining partner is raised from the powder carrier together with the powder layer portion bonded to the first joining partner, and the powder layer portion bonded to the first joining partner is arranged between the first and second joining partners. A sintered join is produced between the first and second joining partners by pressing the first and second joining partners against one another such that the powder layer portion makes contact with both the first and second joining partners. The powder layer portion is sintered as the joining partners are being pressed against one another.

Abstract: An arrangement for joining two joining members includes a first part having a support surface, a first carrier element configured to carry at least one foil, a transportation unit configured to arrange the first carrier element such that the foil is arranged above the support surface in a vertical direction, and a second part configured to exert pressure to a joining stack, when the joining stack is arranged on the support surface. The joining stack includes a first joining member arranged on the support surface, a second joining member, and an electrically conductive connection layer arranged between the joining members. When pressure is exerted to the joining stack, the foil is arranged between the second part and the joining stack and is pressed onto the joining stack and the joining stack is pressed onto the first part, compressing the connection layer and forming a substance-to-substance bond between the joining members.

Abstract: A method for producing a layer including a connecting medium on an assembly partner is provided. The method includes providing a carrier on which the connecting medium is applied. The connecting medium contains a metal in the form of a multiplicity of metal particles. The assembly partner is placed on the connecting medium located on the carrier and pressed onto the connecting medium located on the carrier, so that a layer of the connecting medium adheres to the assembly partner. The assembly partner together with the layer adhering thereto is removed from the carrier. By means of a gas flow, edges of the layer, at which the latter extends laterally beyond the assembly partner, are removed so that a layer residue of the layer remains adhering to the assembly partner.

Abstract: A powder carrier, to which a powder layer containing a metal powder is applied, is provided by an automatic powder carrier feed. A first joining partner is pressed onto the powder layer located on the powder carrier so as to bond a powder layer portion to the first joining partner. The first joining partner is raised from the powder carrier together with the powder layer portion bonded to the first joining partner, and the powder layer portion bonded to the first joining partner is arranged between the first and second joining partners. A sintered join is produced between the first and second joining partners by pressing the first and second joining partners against one another such that the powder layer portion makes contact with both the first and second joining partners. The powder layer portion is sintered as the joining partners are being pressed against one another.

Abstract: A method for producing a layer including a connecting medium on an assembly partner is provided. The method incudes providing a carrier on which the connecting medium is applied. The connecting medium contains a metal in the form of a multiplicity of metal particles. The assembly partner is placed on the connecting medium located on the carrier and pressed onto the connecting medium located on the carrier, so that a layer of the connecting medium adheres to the assembly partner. The assembly partner together with the layer adhering thereto is removed from the carrier. By means of a gas flow, edges of the layer, at which the latter extends laterally beyond the assembly partner, are removed so that a layer residue of the layer remains adhering to the assembly partner.

Abstract: A sintered connection is formed by pressing a semiconductor die against a substrate with a dried sintering material interposed between the substrate and the semiconductor die, the dried sintering material having sintering particles and a solvent. The substrate is heated to a temperature below a sintering temperature of the dried sintering material while the semiconductor die is pressed against the substrate to form local sinter connections between adjacent ones of the sintering particles. The local sinter connections collectively provide a stable joint that fixes the semiconductor die to the substrate prior to sintering. A sintered connection is then formed between the semiconductor die and the substrate from the dried sintering material, after the stable joint is formed.

Abstract: A semiconductor device includes a substrate and a first sintered silver layer on the substrate. The semiconductor device includes a first semiconductor chip and a first diffusion soldered layer coupling the first semiconductor chip to the first sintered silver layer.

Abstract: A sintered connection is formed by pressing a semiconductor die against a substrate with a dried sintering material interposed between the substrate and the semiconductor die, the dried sintering material having sintering particles and a solvent. The substrate is heated to a temperature below a sintering temperature of the dried sintering material while the semiconductor die is pressed against the substrate to form local sinter connections between adjacent ones of the sintering particles. The local sinter connections collectively provide a stable joint that fixes the semiconductor die to the substrate prior to sintering. A sintered connection is then formed between the semiconductor die and the substrate from the dried sintering material, after the stable joint is formed.

Abstract: A device and a method for making a semiconductor device including bonding a first bonding partner to a second bonding partner. The device comprises a lower tool and an upper tool, the upper tool including a plunger having a bottom side facing the lower tool at which bottom side a vacuum is creatable, so that the first bonding partner can be picked up by vacuum from the upper tool and positioned on the second bonding partner.

Abstract: A semiconductor device includes a substrate and a first sintered silver layer on the substrate. The semiconductor device includes a first semiconductor chip and a first diffusion soldered layer coupling the first semiconductor chip to the first sintered silver layer.

Abstract: An arrangement for mounting a multiplicity of components (9, 10), particularly with irregular surface topography, on a support (7) using an assembly tool which has a tool substructure (5) and a tool superstructure (6), where the tool substructure (5) is designed to receive the support and the components which are to be mounted thereon, and the tool superstructure (6) has, in addition to an arrangement (11, 12) for transmitting assembly forces, an arrangement for compensating for tilts between the components and the support and/or an arrangement for compensating for irregular surface topologies.

Abstract: An apparatus for connecting a component with a substrate by means of diffusion soldering in a closed evacuated chamber, wherein the component and the substrate to be connected are displaceable separate from one another in the chamber, and the chamber comprises a combined transfer and pressing unit being displaceable between a current position of the component and a current position of the substrate, for placing and pressing the component on the substrate, and the combined transfer and pressing unit comprises a rotatable element, which, in response to the placing and pressing of the component on the substrate, assumes an angle between the normal of a lower side of the component to be connected and a pressing direction of the component, the angle corresponding to an angle between the normal of a surface area of the substrate to be connected and the pressing direction of the component.

Abstract: An apparatus for connecting a component with a substrate by means of diffusion soldering in a closed evacuated chamber, wherein the component and the substrate to be connected are displaceable separate from one another in the chamber, and the chamber comprises a combined transfer and pressing unit being displaceable between a current position of the component and a current position of the substrate, for placing and pressing the component on the substrate, and the combined transfer and pressing unit comprises a rotatable element, which, in response to the placing and pressing of the component on the substrate, assumes an angle between the normal of a lower side of the component to be connected and a pressing direction of the component, the angle corresponding to an angle between the normal of a surface area of the substrate to be connected and the pressing direction of the component.

Abstract: An apparatus and method for producing semiconductor modules is disclosed. One embodiment provides for bonding at least one semiconductor die onto a carrier including a support film strip, the support film having applied an adhesive layer to one of its surfaces to attach the semiconductor die, and a pressure tool to press the semiconductor die and the support film strip onto the carrier to permanently contact the at least one semiconductor die to the carrier.

Abstract: An apparatus for connecting a component with a substrate by means of diffusion soldering in a closed evacuated chamber is disclosed. The component and the substrate to be connected are displaceable separate from one another in the chamber, and the chamber comprises a combined transfer and pressing unit being displaceable between the current position of the component and the current position of the substrate, for placing and pressing the component on the substrate. The combined transfer and pressing unit comprises a rotatable element, which, in response to the placing and pressing of the component on the substrate, assumes an angle between the normal of the lower side of the component to be connected and the pressing direction of the component, the angle corresponding to the angle between the normal of the substrate surface area to be connected and the pressing direction of the component.

Abstract: A device and a method for making a semiconductor device including bonding a first bonding partner to a second bonding partner. The device comprises a lower tool and an upper tool, the upper tool including a plunger having a bottom side facing the lower tool at which bottom side a vacuum is creatable, so that the first bonding partner can be picked up by vacuum from the upper tool and positioned on the second bonding partner.

Abstract: A chip carrier member comprises a rotatable chip-receiving element. The rotatable chip-receiving element is rotatable essentially about a point.

Abstract: An apparatus for connecting at least two components contains a lower die and an upper die. The lower die has the components which are to be connected, with the first component supporting the at least second component with an at least partial overlap relative to the first component. The lower die and the upper die can be moved relative to one another. The upper die carries at least two heatable plungers which are connected so as to be able to move relative to one another via a sealed pressure pad. The plungers and the pressure pad have a first flexible layer between them. A second flexible layer is arranged between the upper die and the lower die.

Abstract: An apparatus and method for producing semiconductor modules is disclosed. One embodiment provides for bonding at least one semiconductor die onto a carrier including a support film strip, the support film having applied an adhesive layer to one of its surfaces to attach the semiconductor die, and a pressure tool to press the semiconductor die and the support film strip onto the carrier to permanently contact the at least one semiconductor die to the carrier.