Abstract: The present invention provides a system and method of testing CAMs and RAMs. In an exemplary embodiment, the system includes a multiple input signature register (MISR) logically coupled to digital outputs of a CAM, to digital inputs of a RAM, and to digital outputs of an ABIST controller circuit, where the MISR includes a plurality of L1 latch circuits logically coupled to a plurality of L2 latch circuits, a plurality of multiplexer circuits logically coupled to the plurality of L1 latch circuits, a plurality of exclusive or circuits (inner XOR circuits) logically coupled to the plurality of MUX circuits and to the plurality of L2 latch circuits, and at least two XOR circuits (outer XOR circuits), each of the outer XOR circuits logically coupled to one of the inner XOR circuits, to at least one of the MUX circuits, and to at least one of the L2 latch circuits.

Abstract: The present invention provides a system and method of testing CAMs and RAMs. In an exemplary embodiment, the system includes a multiple input signature register (MISR) logically coupled to digital outputs of a CAM, to digital inputs of a RAM, and to digital outputs of an ABIST controller circuit, where the MISR includes a plurality of L1 latch circuits logically coupled to a plurality of L2 latch circuits, a plurality of multiplexer circuits logically coupled to the plurality of L1 latch circuits, a plurality of exclusive or circuits (inner XOR circuits) logically coupled to the plurality of MUX circuits and to the plurality of L2 latch circuits, and at least two XOR circuits (outer XOR circuits), each of the outer XOR circuits logically coupled to one of the inner XOR circuits, to at least one of the MUX circuits, and to at least one of the L2 latch circuits.

Abstract: An electronic circuit is provided with a current sense amplifier. The amplifier comprises a reference current input terminal, a sense current input terminal, and a first output terminal. The electronic circuit includes a reference current source. The reference current source includes two reference n-FET stacks connected in series, and the reference current input terminal is coupled to a ground terminal via the two reference n-FET stacks. The electronic circuit includes a plurality of memory cells each coupled in parallel via a respective sense n-FET stack to the sense current input terminal. The amplifier is configured to generate a first logical value at the first output terminal of the amplifier in response to a sense current of the sense current input terminal being lower than a reference current of the reference current input terminal.

Abstract: A memory cell arrangement of SRAM cell groups may be provided in which in each of the groups multiple SRAM cells are connected to an input of a local read amplifier by at least one common local bit-line. Outputs of the amplifiers are connected to a shared global bit-line. The global bit-line is connected to a pre-charge circuit, and the pre-charge circuit is adapted for pre-charging the global bit-line with a programmable pre-charge voltage before reading data. The pre-charge circuit comprises a limiter circuit which comprises a pre-charge regulator circuit connected to the global bit-line to pre-charge the global bit-line with the programmable pre-charge voltage, and an evaluation and translation circuit connected to the pre-charge regulator circuit and the global bit-line to compensate leakage current of the global bit-line without changing its voltage level.

Abstract: A memory cell arrangement of SRAM cell groups may be provided in which in each of the groups multiple SRAM cells are connected to an input of a local read amplifier by at least one common local bit-line. Outputs of the amplifiers are connected to a shared global bit-line. The global bit-line is connected to a pre-charge circuit, and the pre-charge circuit is adapted for pre-charging the global bit-line with a programmable pre-charge voltage before reading data. The pre-charge circuit comprises a limiter circuit which comprises a pre-charge regulator circuit connected to the global bit-line to pre-charge the global bit-line with the programmable pre-charge voltage, and an evaluation and translation circuit connected to the pre-charge regulator circuit and the global bit-line to compensate leakage current of the global bit-line without changing its voltage level.

Abstract: A memory cell arrangement of SRAM cell groups may be provided in which in each of the groups multiple SRAM cells are connected to an input of a local read amplifier by at least one common local bit-line. Outputs of the amplifiers are connected to a shared global bit-line. The global bit-line is connected to a pre-charge circuit, and the pre-charge circuit is adapted for pre-charging the global bit-line with a programmable pre-charge voltage before reading data. The pre-charge circuit comprises a limiter circuit which comprises a pre-charge regulator circuit connected to the global bit-line to pre-charge the global bit-line with the programmable pre-charge voltage, and an evaluation and translation circuit connected to the pre-charge regulator circuit and the global bit-line to compensate leakage current of the global bit-line without changing its voltage level.

Abstract: A memory cell arrangement of SRAM cell groups may be provided in which in each of the groups multiple SRAM cells are connected to an input of a local read amplifier by at least one common local bit-line. Outputs of the amplifiers are connected to a shared global bit-line. The global bit-line is connected to a pre-charge circuit, and the pre-charge circuit is adapted for pre-charging the global bit-line with a programmable pre-charge voltage before reading data. The pre-charge circuit comprises a limiter circuit which comprises a pre-charge regulator circuit connected to the global bit-line to pre-charge the global bit-line with the programmable pre-charge voltage, and an evaluation and translation circuit connected to the pre-charge regulator circuit and the global bit-line to compensate leakage current of the global bit-line without changing its voltage level.

Abstract: A memory apparatus includes a content addressable memory, CAM, cell block including CAM cells and a random access memory (RAM), cell block including RAM cells. A geometric footprint of each of the CAM cells has a side bigger than a side of a geometric footprint of each of the RAM cells, where the sides of the CAM cells and the RAM cells are parallel to each other. The apparatus is configured to translate an input keyword at an input of the CAM cell block to an output word at an output of the RAM cell block when the keyword at the input of the CAM cell block is stored in the CAM cell block. The CAM cell block is split into a first part and a second part of the CAM cells.

Abstract: A memory cell arrangement of SRAM cell groups may be provided in which in each of the groups multiple SRAM cells are connected to an input of a local read amplifier by at least one common local bit-line. Outputs of the amplifiers are connected to a shared global bit-line. The global bit-line is connected to a pre-charge circuit, and the pre-charge circuit is adapted for pre-charging the global bit-line with a programmable pre-charge voltage before reading data. The pre-charge circuit comprises a limiter circuit which comprises a pre-charge regulator circuit connected to the global bit-line to pre-charge the global bit-line with the programmable pre-charge voltage, and an evaluation and translation circuit connected to the pre-charge regulator circuit and the global bit-line to compensate leakage current of the global bit-line without changing its voltage level.

Abstract: A memory cell arrangement of SRAM cell groups may be provided in which in each of the groups multiple SRAM cells are connected to an input of a local read amplifier by at least one common local bit-line. Outputs of the amplifiers are connected to a shared global bit-line. The global bit-line is connected to a pre-charge circuit, and the pre-charge circuit is adapted for pre-charging the global bit-line with a programmable pre-charge voltage before reading data. The pre-charge circuit comprises a limiter circuit which comprises a pre-charge regulator circuit connected to the global bit-line to pre-charge the global bit-line with the programmable pre-charge voltage, and an evaluation and translation circuit connected to the pre-charge regulator circuit and the global bit-line to compensate leakage current of the global bit-line without changing its voltage level.

Abstract: A memory cell arrangement of SRAM cell groups may be provided in which in each of the groups multiple SRAM cells are connected to an input of a local read amplifier by at least one common local bit-line. Outputs of the amplifiers are connected to a shared global bit-line. The global bit-line is connected to a pre-charge circuit, and the pre-charge circuit is adapted for pre-charging the global bit-line with a programmable pre-charge voltage before reading data. The pre-charge circuit comprises a limiter circuit which comprises a pre-charge regulator circuit connected to the global bit-line to pre-charge the global bit-line with the programmable pre-charge voltage, and an evaluation and translation circuit connected to the pre-charge regulator circuit and the global bit-line to compensate leakage current of the global bit-line without changing its voltage level.

Abstract: An electronic circuit comprising is provided with a current sense amplifier. The amplifier comprises a reference current input terminal, a sense current input terminal, and a first output terminal. The electronic circuit includes a reference current source. The reference current source includes two reference n-FET stacks connected in series, and the reference current input terminal is coupled to a ground terminal via the two reference n-FET stacks. The electronic circuit includes a plurality of memory cells each coupled in parallel via a respective sense n-FET stack to the sense current input terminal. The amplifier is configured to generate a first logical value at the first output terminal of the amplifier in response to a sense current of the sense current input terminal being lower than a reference current of the reference current input terminal.

Abstract: Disclosed aspects include a content addressable memory device comprising at least two memory banks connectable to a global search line. Each memory bank comprises at least two content addressable memory cells. Each content addressable memory cell can store one bit. Each content addressable memory cell is coupled to a respective local search line. Aspects include a bank connection circuitry configured for coupling the global search line to the local search lines in dependence of a bank prediction signal line. The bank connection circuitry of the content addressable memory device may comprise bank hold circuitry for storing a search value transmitted by the global search line.

Abstract: Electronic circuits and memory circuits are provided for implementing a method for transforming a chip clock signal to a local clock signal. The method includes: generating a first clock signal in response to the chip clock signal, a first control signal and a second control signal; generating a second clock signal by delaying the first clock signal with a second clock delay; generating the first control signal and the second control signal by delaying the second clock signal with a pulse width delay, where the first control signal goes from high-to-low with a control signal delay after the second control signal goes from high-to-low, and vice versa; and generating the local clock signal based on the second clock signal.

Abstract: Electronic circuits and memory circuits are provided for implementing a method for transforming a chip clock signal to a local clock signal. The method includes: generating a first clock signal in response to the chip clock signal, a first control signal and a second control signal; generating a second clock signal by delaying the first clock signal with a second clock delay; generating the first control signal and the second control signal by delaying the second clock signal with a pulse width delay, where the first control signal goes from high-to-low with a control signal delay after the second control signal goes from high-to-low, and vice versa; and generating the local clock signal based on the second clock signal.

Abstract: An electronic circuit is provided with a current sense amplifier. The amplifier comprises a reference current input terminal, a sense current input terminal, and a first output terminal. The electronic circuit includes a reference current source. The reference current source includes two reference n-FET stacks connected in series, and the reference current input terminal is coupled to a ground terminal via the two reference n-FET stacks. The electronic circuit includes a plurality of memory cells each coupled in parallel via a respective sense n-FET stack to the sense current input terminal. The amplifier is configured to generate a first logical value at the first output terminal of the amplifier in response to a sense current of the sense current input terminal being lower than a reference current of the reference current input terminal.

Abstract: The invention relates to a current sense amplifier. The current sense amplifier comprises: a first NAND gate comprising an output terminal being connected to a first output terminal, a second NAND gate comprising an output terminal being connected to a second output terminal, a first cross coupled inverter, and a second cross coupled inverter, the first inverter comprising a first n-FET and the second inverter comprising a second n-FET, a transmission gate comprising a first and a second transmission terminal and a transmission control terminal, the transmission control terminal being connected to a sense control line input terminal, a third n-FET having a source connected to a sense current input terminal and a drain connected to a source of the first n-FET, a fourth n-FET having a source connected to a reference current input terminal and a drain connected to a source of the second n-FET.

Abstract: A memory cell arrangement of SRAM cell groups may be provided in which in each of the groups multiple SRAM cells are connected to an input of a local read amplifier by at least one common local bit-line. Outputs of the amplifiers are connected to a shared global bit-line. The global bit-line is connected to a pre-charge circuit, and the pre-charge circuit is adapted for pre-charging the global bit-line with a programmable pre-charge voltage before reading data. The pre-charge circuit comprises a limiter circuit which comprises a pre-charge regulator circuit connected to the global bit-line to pre-charge the global bit-line with the programmable pre-charge voltage, and an evaluation and translation circuit connected to the pre-charge regulator circuit and the global bit-line to compensate leakage current of the global bit-line without changing its voltage level.

Abstract: A memory device having a plurality of banks of memory cells may be provided. Each memory cells may be interconnected via a local write bit-line and a complementary local write bit-line to a local write bit-line buffer circuit. The local write bit-line buffer circuit may be connected via a global write bit-line and a complementary one to a negative bias write assist circuit. The memory device may also comprise an address decoder separately connected to the local write bit-line buffer circuits. The address decoder may comprise a generating unit for enabling exactly one local write enable signal for a respective one of said local write bit-line buffer circuits. The local write bit-line buffer circuit may be adapted for generating local write data on said local write bit-line in response to receiving global write data on said global write bit-line when its local write enable signal is enabled.

Abstract: Electronic circuits and memory circuits are provided for implementing a method for transforming a chip clock signal to a local clock signal. The method includes: generating a first clock signal in response to the chip clock signal, a first control signal and a second control signal; generating a second clock signal by delaying the first clock signal with a second clock delay; generating the first control signal and the second control signal by delaying the second clock signal with a pulse width delay, where the first control signal goes from high-to-low with a control signal delay after the second control signal goes from high-to-low, and vice versa; and generating the local clock signal based on the second clock signal.