Abstract: A compact telephoto lens system that may be used in a small form factor cameras. The lens system may include five lens elements with refractive power. Alternatively, the lens system may include four lens elements with refractive power. At least one of the object side and image side surfaces of at least one of the lens elements is aspheric. Total track length (TTL) of the lens system may be 6.0 mm or less. Focal length f of the lens system may be at or about 7.0 mm (for example, within a range of 6.5-7.5 mm). Lens elements are selected and configured so that the telephoto ratio (TTL/f) satisfies the relation 0.74<TTL/f<1.0. Materials, radii of curvature, shapes, sizes, spacing, and aspheric coefficients of the lens elements may be selected to achieve quality optical performance and high image resolution in a small form factor telephoto camera.

Abstract: Ring-field, catoptric and catadioptric, unit-magnification, projection optical systems having non-concentric optical surfaces are disclosed. Each system has a system axis with object and image planes on opposite sides of the system axis. The non-concentric surfaces allow for working distances of the object and image planes in excess of 100 millimeters to be achieved, with a ring-field width sufficient to allow a rectangular object-field having a long dimension in excess of 100 mm to be projected.

Abstract: A unit magnification projection optical system includes, listed in order along a system axis, a mirror, a lens group having negative power and a lens group having positive power. The optical system is a symmetric system, with an object plane on one side of the system axis and an object plane on an opposite side of the system axis. The object and image planes are spaced apart from the positive lens group by a working distance greater than 100 millimeters.

Abstract: Ring-field, catoptric and catadioptric, unit-magnification, projection optical systems having non-concentric optical surfaces are disclosed. Each system has a system axis with object and image planes on opposite sides of the system axis. The non-concentric surfaces allow for working distances of the object and image planes in excess of 100 millimeters to be achieved, with a ring-field width sufficient to allow a rectangular object-field having a long dimension in excess of 100 mm to be projected.

Abstract: A unit magnification projection optical system includes, listed in order along a system axis, a mirror, a lens group having negative power and a lens group having positive power. The optical system is a symmetric system, with an object plane on one side of the system axis and an object plane on an opposite side of the system axis. The object and image planes are spaced apart from the positive lens group by a working distance greater than 100 millimeters.

Abstract: A re-imaging optical system includes a front objective lens group, a relay lens and a Dewar assembly. The front objective lens group includes at least three lenses for focusing light entering an entrance pupil and forming a first image located adjacent or near a field stop. The relay lens group includes at least three lenses for focusing light from the first image toward the Dewar assembly. The Dewar assembly includes a cold stop and a cooled detector array for forming a second image. Advantageously, the second image is a magnified version of the first image. Also advantageously, the distance between the entrance pupil and the detector array is less than or equal to 201 millimeters. Furthermore, the lenses of the front objective lens group and the lenses of the relay lens group are made from readily available material, such as silicon and/or germanium.

Abstract: A 1× projection optical system for deep ultra-violet (DUV) photolithography is disclosed. The optical system is a modified Dyson system capable of imaging a relatively large field at high numerical apertures at DUV wavelengths. The optical system includes a lens group having first and second prisms and four lenses having a positive-negative-positive negative arrangement as arranged in order from the prisms toward the mirror. A projection photolithography system that employs the projection optical system of the invention is also disclosed.

Abstract: A projection optical system suitable for projection photolithography is disclosed. The projection optical system is a modified Wynne-Dyson system capable of imaging a large field over both a narrow and a broad spectral range. The projection optical system includes a positive lens group arranged adjacent to but spaced apart from a concave mirror along the mirror axis on the concave side of the mirror. The system also includes a variable aperture stop so that the system has a variable NA. The projection optical system has two or more common foci within an ultraviolet exposure band and a third common focus in a visible alignment band. A projection photolithography system that employs the projection optical system is also disclosed.

Abstract: An optical system for projection photolithography is disclosed. The optical system is a modified Dyson system capable of imaging a large field over both a narrow and a broad spectral range. The optical system includes a positive lens group having a positive subgroup of elements that includes at least a plano-convex element and a negative subgroup that includes at least a negative meniscus element. The lens subgroups are separated by a small air space. The positive and negative subgroups constitute a main lens group arranged adjacent to but spaced apart from a concave mirror along the mirror axis. The system also includes a variable aperture stop so that the system has a variable NA. A projection photolithography system that employs the optical system is also disclosed.

Abstract: An optical system for projection photolithography is disclosed. The optical system is a modified Dyson system capable of imaging a large field over a broad spectral range. The optical system includes a positive lens group having three elements: a plano-convex element and two negative meniscus elements. The lens group is arranged adjacent to but spaced apart from a concave mirror along the mirror axis. A projection photolithography system that employs the optical system is also disclosed.

Abstract: A 1X projection optical system for deep ultra-violet (DUV) photolithography is disclosed. The optical system is a modified Dyson system capable of imaging a relatively large field at high numerical apertures at DUV wavelengths. The optical system includes a lens group having first and second prisms and four lenses having a positive-negative-positive negative arrangement as arranged in order from the prisms toward the mirror. A projection photolithography system that employs the projection optical system of the invention is also disclosed.

Abstract: A 1× projection optical system for deep ultra-violet (DUV) photolithography is disclosed. The optical system is a modified Dyson system capable of imaging a relatively large field at high numerical apertures at DUV wavelengths. The optical system includes a lens group having first and second prisms and four lenses having a positive-negative-positive negative arrangement as arranged in order from the prisms toward the mirror. A projection photolithography system that employs the projection optical system of the invention is also disclosed.

Abstract: An optical system for projection photolithography is disclosed. The optical system is a modified Dyson system capable of imaging a large field over both a narrow and a broad spectral range. The optical system includes a positive lens group having a positive subgroup of elements that includes at least a plano-convex element and a negative subgroup that includes at least a negative meniscus element. The lens subgroups are separated by a small air space. The positive and negative subgroups constitute a main lens group arranged adjacent to but spaced apart from a concave mirror along the mirror axis. The system also includes a variable aperture stop so that the system has a variable NA. A projection photolithography system that employs the optical system is also disclosed.

Abstract: An optical system for projection photolithography is disclosed. The optical system is a modified Dyson system capable of imaging a large field over both a narrow and a broad spectral range. The optical system includes a positive lens group having a positive subgroup of elements that includes at least a plano-convex element and a negative subgroup that includes at least a negative meniscus element. The lens subgroups are separated by a small air space. The positive and negative subgroups constitute a main lens group arranged adjacent to but spaced apart from a concave mirror along the mirror axis. The system also includes a variable aperture stop so that the system has a variable NA. A projection photolithography system that employs the optical system is also disclosed.

Abstract: An optical system for projection photolithography is disclosed. The optical system is a modified Dyson system capable of imaging a large field over a broad spectral range. The optical system includes a positive lens group having three elements: a piano-convex element and two negative meniscus elements. The lens group is arranged adjacent to but spaced apart from a concave mirror along the mirror axis. A projection photolithography system that employs the optical system is also disclosed.

Abstract: A projection lens system that is used to transfer a pattern from a reticle onto a wafer, incorporates a projection optical system that is capable of maintaining the same, or increased performance, as the current projection lens systems, and that achieves excellent aberration correction, has a numerical aperture of at least 0.6, an exposure field area of at least 18.7.times.18.7 mm or at least 26.45 mm diameter at the wafer plane, and has a total lens thickness to length ratio less than 0.64 and uses 5 or less aspherical lens surfaces.

Abstract: Projection lens systems for transferring a pattern on a reticle onto a wafer having an aplanatic lens element. The aplanatic lens element has a shape factor between 0.1 and 0.224, the projection lens system satisfies the condition:-2.0<f.sub.ap /F<-0.6251, where f.sub.ap is the focal length of the aplanatic lens element and F is the focal length of the projection optical lens system. The projection optical lens system further satisfies the condition 2.6<.vertline.f.sub.G3 /f.sub.G .vertline.<4.64.

Abstract: An apparatus and method for transferring a pattern on a reticle onto a wafer includes a projection lens system having four groups of lens elements. The projection lens system satisfies the conditions: 0.3<.vertline.f.sub.G2 /L.vertline.<4.46, 1.8<.vertline.f.sub.G3 /L.vertline.<4.8, 0.05<.vertline.f.sub.G2 /f.sub.G3 .vertline.<0.25, 0.77<.vertline.f.sub.G1 /f.sub.G4 .vertline.<1.1, 0.17<f.sub.G4 /F<0.195, 0.14<f.sub.G1 /F<0.191, and having a numerical aperture equal to or greater than 0.60.

Abstract: In the projection optical system that projects an image of the first object onto the second object with a fixed reduction ratio and a projection aligner equipped therewith, said projection optical system comprises, viewed from said first object side, in order of succession, the first group of lenses with positive refractive power, and the second group of lenses virtually consists of afocal system, and the third group of lens with positive refractive power, and if the focal length of said projection optical system is represented by F, the projection magnification ratio of said projection optical system is represented by B, the distance between said first object and said second object is represented by L, the distance from said first object to the lens surface that is closest to said first group of lenses is represented by d.sub.0, the focal length of said first group of lenses is represented by f.sub.1, and the focal length of said third group of lenses is represented by f.sub.

Abstract: In the projection optical system that projects an image of the first object onto the second object with a fixed reduction ratio and a projection aligner equipped therewith, said projection optical system comprises, viewed from said first object side, in order of succession, the first group of lenses with positive refractive power, and the second group of lenses virtually consists of afocal system, and the third group of lens with positive refractive power, and if the focal length of the overall system is represented by F, the projection magnification ratio of said projection optical system is represented by B, the distance between said first object and said second object is represented by L, and when a ray from the second object side of said projection optical system that is parallel to the optical axis of said projection optical system is incident on said projection optical system, a distance between a point where an extension on the first object side of said ray intercepts the optical axis and said first ob