Abstract: Semiconductor module including a semiconductor and including a shaped metal body that is electrically contacted by the semiconductor, for forming a contact surface for an electrical conductor, wherein the shaped metal body is bent or folded. A method is also described for establishing electrical contacting of an electrical conductor on a semiconductor, said method including the steps of: fastening a bent or folded shaped metal body of a constant thickness to the semiconductor by means of a first fastening method and then fastening the electrical conductor to the shaped metal body by means of a second fastening method.

Abstract: The invention relates to a power electronics module including a first circuit carrier (5,10, 11), as well as an electronic assembly (20, 30) arranged in an electrically contacting manner on the upper flat side of the first circuit carrier (5, 10, 11), and a first cooling element (40) in thermal contact with the underside of the first circuit carrier (5, 10, 11), wherein the module has at least one second assembly (20, 30) arranged on the upper side of a second circuit carrier (5, 10, 11) and a second cooling element (40) arranged on the underside of the second circuit carrier (5, 10, 11), wherein the first and the second circuit carriers (5, 10, 11) are arranged with their upper sides facing one another and at least one central heat sink (60, 61, 63, 64) that is electrically insulated from the assemblies (20, 30) is arranged in the space between the assemblies (20, 30), wherein the assemblies (20, 30) and the at least one central heat sink (60, 61, 63, 64) are embedded in a heat-conducting potting compound (5

Abstract: The invention relates to a power electronics module including a flat circuit carrier (5) and an electronic assembly (10) arranged in an electrically contacting manner on the upper flat side of the circuit carrier (5) and cooling bodies (20) thermally in contact with the underside of the circuit carrier (5), wherein a heat-conducting bridge (30) arranged on the upper side of the circuit carrier (5), spanning the assembly (10) and extensively covering same, wherein the heat-conducting bridge (30) is in thermal contact with the cooling body (20) at mounting points arranged next to the assembly (10) and the space between the heat-conducting bridge (30) and the circuit carrier (5) is filled with a heat-conducting potting compound (50).

Abstract: Semiconductor module having a first substrate, a second substrate and a spacer distancing the substrates from each other, wherein the spacer is formed by at least one elastic shaped metal body.

Abstract: Process for producing an electronic subassembly by low-temperature pressure sintering, comprising the following steps: arranging an electronic component on a circuit carrier having a conductor track, connecting the electronic component to the circuit carrier by the low-temperature pressure sintering of a joining material which connects the electronic component to the circuit carrier, characterized in that, to avoid the oxidation of the electronic component or of the conductor track, the low-temperature pressure sintering is carried out in a low-oxygen atmosphere having a relative oxygen content of 0.005 to 0.3%.

Abstract: Process for producing an electronic subassembly by low-temperature pressure sintering, comprising the following steps: arranging an electronic component on a circuit carrier having a conductor track, connecting the electronic component to the circuit carrier by the low-temperature pressure sintering of a joining material which connects the electronic component to the circuit carrier, characterized in that, to avoid the oxidation of the electronic component or of the conductor track, the low-temperature pressure sintering is carried out in a low-oxygen atmosphere having a relative oxygen content of 0.005 to 0.3%.

Abstract: Semiconductor module having a first substrate, a second substrate and a spacer distancing the substrates from each other, wherein the spacer is formed by at least one elastic shaped metal body.

Abstract: Semiconductor module including a semiconductor and including a shaped metal body that is electrically contacted by the semiconductor, for forming a contact surface for an electrical conductor, wherein the shaped metal body is bent or folded. A method is also described for establishing electrical contacting of an electrical conductor on a semiconductor, said method including the steps of: fastening a bent or folded shaped metal body of a constant thickness to the semiconductor by means of a first fastening method and then fastening the electrical conductor to the shaped metal body by means of a second fastening method.

Abstract: The invention relates to a power electronics module including a flat circuit carrier (5) and an electronic assembly (10) arranged in an electrically contacting manner on the upper flat side of the circuit carrier (5) and cooling bodies (20) thermally in contact with the underside of the circuit carrier (5), wherein a heat-conducting bridge (30) arranged on the upper side of the circuit carrier (5), spanning the assembly (10) and extensively covering same, wherein the heat-conducting bridge (30) is in thermal contact with the cooling body (20) at mounting points arranged next to the assembly (10) and the space between the heat-conducting bridge (30) and the circuit carrier (5) is filled with a heat-conducting potting compound (50).

Abstract: The invention relates to a power electronics module including a first circuit carrier (5,10, 11), as well as an electronic assembly (20, 30) arranged in an electrically contacting manner on the upper flat side of the first circuit carrier (5, 10, 11), and a first cooling element (40) in thermal contact with the underside of the first circuit carrier (5, 10, 11), wherein the module has at least one second assembly (20, 30) arranged on the upper side of a second circuit carrier (5, 10, 11) and a second cooling element (40) arranged on the underside of the second circuit carrier (5, 10, 11), wherein the first and the second circuit carriers (5, 10, 11) are arranged with their upper sides facing one another and at least one central heat sink (60, 61, 63, 64) that is electrically insulated from the assemblies (20, 30) is arranged in the space between the assemblies (20, 30), wherein the assemblies (20, 30) and the at least one central heat sink (60, 61, 63, 64) are embedded in a heat-conducting potting compound (5

Abstract: Sintering tool (10) with a cradle for receiving an electronic subassembly (BG) to be sintered, characterized by at least one support bracket (20), arranged at two locations opposite the cradle, for fixing a protective film (30) covering the electronic subassembly (BG).

Abstract: One aspect relates to a method for producing a substrate plate for a large-area semiconductor element, particularly for a thyristor wafer or a diode. At least one first layer made from a first material, with a first coefficient of expansion, and at least one second layer made from a second material of low expandability, with a second coefficient of expansion, which is smaller than the first coefficient of expansion, are bonded to one another by means of a low-temperature sintering method at a bonding temperature of 150° C.-300° C. At least one first bonding layer made from a bonding material is formed between the first layer and the second layer and the bonding temperature substantially corresponds to the mounting temperature during the bonding of the substrate plate produced with at least one large-area semiconductor element.

Abstract: One aspect relates to a method for producing a circuit carrier for a semiconductor component. At least one first copper layer or one first copper-alloy layer with a first coefficient of expansion and at least one second layer made from a second material of low expandability with a second coefficient of expansion, which is smaller than the first coefficient of expansion, are bonded to one another by means of a low-temperature sintering method at a bonding temperature of 150° C. to 300° C.

Abstract: One aspect relates to a heat spreading plate having at least one cooling fin. The heat spreading plate includes at least a first layer and at least a second layer, and at least one surface portion bent out of a base surface of the second layer forms a cooling fin.

Abstract: One aspect relates to a method for producing a heat-spreading plate for a circuit carrier. At least one first layer made of a first material having a first coefficient of expansion and at least one second layer made of a second, low-stretch material having a second coefficient of expansion that is smaller than the first coefficient of expansion are bonded to each other at a bonding temperature of 150° C.-300° C. by means of a low-temperature sintering process. At least one bonding layer from a bonding material is formed between the first layer and the second layer and the bonding temperature essentially corresponding to the mounting temperature at which the produced heat spreading plate is connected to at least one circuit carrier.

Abstract: Process for producing an electronic subassembly by low-temperature pressure sintering, comprising the following steps: arranging an electronic component on a circuit carrier having a conductor track, connecting the electronic component to the circuit carrier by the low-temperature pressure sintering of a joining material which connects the electronic component to the circuit carrier, characterized in that, to avoid the oxidation of the electronic component or of the conductor track, the low-temperature pressure sintering is carried out in a low-oxygen atmosphere having a relative oxygen content of 0.005 to 0.3%.

Abstract: Sintering tool (10) with a cradle for receiving an electronic subassembly (BG) to be sintered, characterized by at least one support bracket (20), arranged at two locations opposite the cradle, for fixing a protective film (30) covering the electronic subassembly (BG).

Abstract: A power module (10) having a leadframe (20), a power semiconductor (30) arranged on the leadframe (20), a base plate (40) for dispersing heat generated by the power semiconductor (30) and a potting compound (50) surrounding the leadframe (20) and the power semiconductor (30), that physically connects the power semiconductor (30) and/or the leadframe (20) to the base plate(40).

Abstract: Sintering tool (10) with a cradle for receiving an electronic subassembly (BG) to be sintered, characterized by at least one support bracket (20), arranged at two locations opposite the cradle, for fixing a protective film (30) covering the electronic subassembly (BG).

Abstract: Tool (10) for the lower die of a sintering device, the tool (10) having a rest (20) for an electronic subassembly (30) comprising a circuit carrier, to be sintered, where the rest (20) is formed from a material with a coefficient of linear expansion that is close to the coefficient of expansion of the circuit carrier of the electronic subassembly (30).