Patents by Inventor Ronald L. DiCarlo
Ronald L. DiCarlo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20140020764Abstract: A method comprises transporting a first stream of a carrier gas to a delivery device that contains a liquid precursor compound. The method further comprises transporting a second stream of the carrier gas to a point downstream of the delivery device. The first stream after emanating from the delivery device and the second stream are combined to form a third stream, such that the dew point of the vapor of the liquid precursor compound in the third stream is lower than the temperature of the plumbing that transports the vapor to a CVD reactor or a plurality of CVD reactors. The flow direction of the first stream, the flow direction of the second stream and the flow direction of the third stream are unidirectional and are not opposed to each other.Type: ApplicationFiled: July 18, 2012Publication date: January 23, 2014Applicant: ROHM AND HAAS ELECTRONIC MATERIALS LLCInventors: Egbert Woelk, Ronald L. DiCarlo, JR.
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Publication number: 20130312665Abstract: Disclosed is a method of providing a constant concentration of a metal-containing precursor compound in the vapor phase in a carrier gas. Such method is particularly useful in supplying a constant concentration of a gaseous metal-containing compound to a plurality of vapor deposition reactors.Type: ApplicationFiled: August 5, 2013Publication date: November 28, 2013Inventors: Egbert WOELK, Ronald L. DiCARLO
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Patent number: 8555809Abstract: Disclosed herein is a device comprising an evaporator; and a heat exchanger; the heat exchanger being in fluid communication with evaporator; evaporator comprising an outer casing; and an inner casing that is disposed within the outer casing; the inner casing contacting a plate; wherein the inner casing encloses a first conduit that is operative to introduce a carrier fluid into evaporator; and a second conduit that is operative to remove carrier fluid entrained with a precursor; wherein the outer casing is detachably attached to the plate; the plate contacting a first precursor conduit that is operative to introduce the precursor into evaporator from the heat exchanger; where the heat exchanger is disposed proximate to evaporator at a distance effective to maintain the precursor in evaporator at a substantially constant temperature when the ambient temperature around the heat exchanger and evaporator fluctuates by an amount of up to about ±35° C.Type: GrantFiled: January 14, 2010Date of Patent: October 15, 2013Assignee: Rohm and Haas Electronic Materials, LLCInventors: Egbert Woelk, Ronald L. DiCarlo, Jr.
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Patent number: 8501266Abstract: Disclosed is a method of providing a constant concentration of a metal-containing precursor compound in the vapor phase in a carrier gas. Such method is particularly useful in supplying a constant concentration of a gaseous metal-containing compound to a plurality of vapor deposition reactors.Type: GrantFiled: March 29, 2010Date of Patent: August 6, 2013Assignee: Rohm and Haas Electronics Materials LLCInventors: Egbert Woelk, Ronald L. DiCarlo, Jr.
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Publication number: 20120298040Abstract: A method comprises transporting a first stream of a carrier gas to a delivery device that contains a solid precursor compound. The first stream of carrier gas is at a temperature greater than or equal to 20° C. The method further comprises transporting a second stream of the carrier gas to a point downstream of the delivery device. The first stream and the second stream are combined to form a third stream, such that the dewpoint of the vapor of the solid precursor compound in the third stream is lower than the ambient temperature. The flow direction of the first stream, the flow direction of the second stream and the flow direction of the third stream are unidirectional and are not opposed to each other.Type: ApplicationFiled: May 24, 2011Publication date: November 29, 2012Applicant: ROHM AND HAAS ELECTRONIC MATERIALS LLCInventors: Egbert Woelk, Ronald L. DiCarlo, JR.
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Publication number: 20120298207Abstract: A method comprises transporting a first stream of a carrier gas to a delivery device that contains a solid precursor compound. The first stream of carrier gas is at a temperature greater than or equal to 20° C. The method further comprises transporting a second stream of the carrier gas to a point downstream of the delivery device. The first stream and the second stream are combined to form a third stream, such that the dewpoint of the vapor of the solid precursor compound in the third stream is lower than the ambient temperature. The flow direction of the first stream, the flow direction of the second stream and the flow direction of the third stream are unidirectional and are not opposed to each other.Type: ApplicationFiled: May 24, 2011Publication date: November 29, 2012Applicant: ROHM AND HAAS ELECTRONIC MATERIALS LLCInventors: Egbert Woelk, Ronald L. DiCarlo, JR.
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Publication number: 20120034378Abstract: A delivery device comprises an inlet port and an outlet port. The delivery device comprises an inlet chamber and an outlet chamber, with the outlet chamber being opposedly disposed to the inlet chamber and in fluid communication with the inlet chamber via a conical section. The outlet chamber comprises a labyrinth that is operative to prevent solid particles of a solid precursor compound contained in the delivery device from leaving the delivery device while at the same time permitting vapors of the solid precursor compound to leave the delivery device via the outlet port.Type: ApplicationFiled: August 9, 2010Publication date: February 9, 2012Applicant: ROHM AND HAAS ELECTRONIC MATERIALS LLCInventors: Egbert Woelk, Ronald L. DiCarlo, JR.
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Publication number: 20110171383Abstract: Disclosed herein is a device comprising an evaporator; and a heat exchanger; the heat exchanger being in fluid communication with evaporator; evaporator comprising an outer casing; and an inner casing that is disposed within the outer casing; the inner casing contacting a plate; wherein the inner casing encloses a first conduit that is operative to introduce a carrier fluid into evaporator; and a second conduit that is operative to remove carrier fluid entrained with a precursor; wherein the outer casing is detachably attached to the plate; the plate contacting a first precursor conduit that is operative to introduce the precursor into evaporator from the heat exchanger; where the heat exchanger is disposed proximate to evaporator at a distance effective to maintain the precursor in evaporator at a substantially constant temperature when the ambient temperature around the heat exchanger and evaporator fluctuates by an amount of up to about ±35° C.Type: ApplicationFiled: January 14, 2010Publication date: July 14, 2011Applicant: ROHM AND HAAS ELECTRONIC MATERIALS LLCInventors: Egbert Woelk, Ronald L. DiCarlo, JR.
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Publication number: 20100300361Abstract: Delivery devices for delivering solid precursor compounds in the vapor phase to reactors are provided. Such devices include a precursor composition of a solid precursor compound with a layer of packing material disposed thereon. Also provided are methods for transporting a carrier gas saturated with the precursor compound for delivery into such CVD reactors.Type: ApplicationFiled: May 25, 2010Publication date: December 2, 2010Applicant: Rohm and Haas Electronic Materials LLCInventors: Deodatta Vinayak SHENAI-KHATKHATE, Michael L. Timmons, Charles J. Marsman, Egbert Woelk, Ronald L. DiCarlo, JR.
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Publication number: 20100285206Abstract: Disclosed is a method of providing a constant concentration of a metal-containing precursor compound in the vapor phase in a carrier gas. Such method is particularly useful in supplying a constant concentration of a gaseous metal-containing compound to a plurality of vapor deposition reactors.Type: ApplicationFiled: March 29, 2010Publication date: November 11, 2010Applicant: Rohm and Haas Electronic Materials LLCInventors: Egbert Woelk, Ronald L. DiCarlo, JR.
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Patent number: 7722720Abstract: Delivery devices for delivering solid precursor compounds in the vapor phase to reactors are provided. Such devices include a precursor composition of a solid precursor compound with a layer of packing material disposed thereon. Also provided are methods for transporting a carrier gas saturated with the precursor compound for delivery into such CVD reactors.Type: GrantFiled: December 6, 2005Date of Patent: May 25, 2010Assignee: Rohm and Haas Electronic Materials LLCInventors: Deodatta Vinayak Shenai-Khatkhate, Michael L. Timmons, Charles J. Marsman, Egbert Woelk, Ronald L. DiCarlo, Jr.
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Patent number: 7321048Abstract: A method of purifying an organometallic compound by heating the organometallic compound in the presence of a trialkyl aluminum compound and a catalyst.Type: GrantFiled: November 17, 2006Date of Patent: January 22, 2008Assignee: Rohm and Haas Electronic Materials LLCInventors: Deodatta Vinayak Shenai-Khatkhate, Ronald L. DiCarlo, Jr.
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Patent number: 6956127Abstract: Disclosed are methods of preparing monoalkyl Group VA metal dihalide compounds in high yield and high purity by the reaction of a Group VA metal trihalide with an organo lithium reagent or a compound of the formula RnM1X3?n, where R is an alkyl, M1 is a Group IIIA metal, X is a halogen and n is an integer fro 1 to 3. Such monoalkyl Group VA metal dihalide compounds are substantially free of oxygenated impurities, ethereal solvents and metallic impurities. Monoalkyl Group VA metal dihydride compounds can be easily produced in high yield and high purity by reducing such monoalkyl Group VA metal dihalide compounds.Type: GrantFiled: January 17, 2003Date of Patent: October 18, 2005Assignee: Shipley Company, L.L.C.Inventors: Deodatta Vinayak Shenai-Khatkhate, Michael Brendan Power, Artashes Amamchyan, Ronald L. DiCarlo, Jr.
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Patent number: 6770769Abstract: Trialkylindium compounds are prepared by reacting indium trihalide with a trialkylaluminum compound in the presence of a fluoride salt, wherein the molar ratio of the indium trihalide to the fluoride salt is at least 1:4.5. Such trialkylindium compounds are particularly suitable for use in metalorganic vapor phase epitaxy.Type: GrantFiled: April 5, 2003Date of Patent: August 3, 2004Assignee: Shipley Company, L.L.C.Inventors: Deodatta Vinayak Shenai-Khatkhate, Michael Brendan Power, Ronald L. DiCarlo, Jr.
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Publication number: 20040122248Abstract: A method of preparing organometal compounds that does not use oxygenated solvents is provided. The compounds produced by such method are particularly useful as precursor compounds for metalorganic chemical vapor deposition processes used in the manufacture of electronic devices. Methods of depositing metal films using such organometal compounds are also provided.Type: ApplicationFiled: September 30, 2003Publication date: June 24, 2004Applicant: Shipley Company, L.L.C.Inventors: Deodatta Vinayak Shenai-Khatkhate, Ronald L. Dicarlo, Michael L. Timmons
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Patent number: 6680397Abstract: Disclosed are trialkylindium compounds containing two bulky alkyl groups that are liquids or easily liquefiable solids and have sufficient vapor pressure for use in vapor deposition processes, as well as methods of depositing indium containing films using such compounds.Type: GrantFiled: January 17, 2003Date of Patent: January 20, 2004Assignee: Shipley Company, L.L.C.Inventors: Deodatta Vinayak Shenai-Khatkhate, Ronald L. DiCarlo, Jr.
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Publication number: 20030191333Abstract: Trialkylindium compounds are prepared by reacting indium trihalide with a trialkylaluminum compound in the presence of a fluoride salt, wherein the molar ratio of the indium trihalide to the fluoride salt is at least 1:4.5. Such trialkylindium compounds are particularly suitable for use in metalorganic vapor phase epitaxy.Type: ApplicationFiled: April 5, 2003Publication date: October 9, 2003Applicant: Shipley Company, L.L.C.Inventors: Deodatta Vinayak Shenai-Khatkhate, Michael Brendan Power, Ronald L. Dicarlo
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Publication number: 20030181745Abstract: Disclosed are trialkylindium compounds containing two bulky alkyl groups that are liquids or easily liquefiable solids and have sufficient vapor pressure for use in vapor deposition processes, as well as methods of depositing indium containing films using such compounds.Type: ApplicationFiled: January 17, 2003Publication date: September 25, 2003Applicant: Shipley Company, L.L.C.Inventors: Deodatta Vinayak Shenai-Khatkhate, Ronald L. DiCarlo
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Publication number: 20030181746Abstract: Disclosed are methods of preparing monoalkyl Group VA metal dihalide compounds in high yield and high purity by the reaction of a Group VA metal trihalide with an organo lithium reagent or a compound of the formula RnM1X3−n , where R is an alkyl, M1 is a Group IIIA metal, X is a halogen and n is an integer fro 1 to 3. Such monoalkyl Group VA metal dihalide compounds are substantially free of oxygenated impurities, ethereal solvents and metallic impurities. Monoalkyl Group VA metal dihydride compounds can be easily produced in high yield and high purity by reducing such monoalkyl Group VA metal dihalide compounds.Type: ApplicationFiled: January 17, 2003Publication date: September 25, 2003Applicant: Shipley Company, L.L.C.Inventors: Deodatta Vinayak Shenai-Khatkhate, Michael Brendan Power, Artashes Amamchyan, Ronald L. DiCarlo