Abstract: A portable, non-filtering, microorganism deactivation device for treating water contaminated with harmful bacteria such as E. coli and fecal coliform, includes a housing, said housing containing a high porosity media saturated with an ionically charged material such as colloidal silver.

Abstract: A portable, non-filtering, microorganism deactivation device for treating water contaminated with harmful bacteria such as E. coli and fecal coliform, includes a housing, said housing containing a high porosity media saturated with an ionically charged material such as colloidal silver.

Abstract: A method and apparatus for processing substrate edges is disclosed that overcomes the limitations of conventional edge processing methods and systems used in semiconductor manufacturing. The edge processing method and apparatus of this invention includes a laser and optical system to direct a beam of radiation onto a rotating substrate supported by a chuck, in atmosphere. The optical system accurately and precisely directs the beam to remove or transform organic or inorganic films, film stacks, residues, or particles from the top edge, top bevel, apex, bottom bevel, and bottom edge of the substrate. An optional gas injector system directs gas onto the substrate edge to aid in the reaction. Process by-products are removed via an exhaust tube enveloping the reaction site. This invention permits precise control of an edge exclusion zone, resulting in an increase in the number of usable die on a wafer.

Abstract: A method and apparatus for processing substrate edges is disclosed that overcomes the limitations of conventional edge processing methods and systems used in semiconductor manufacturing. The edge processing method and apparatus of this invention includes a laser and fiber-optic system to direct laser radiation onto a rotating substrate supported by a chuck. A laser beam is transmitted into a bundle of optical fibers, and the fibers accurately and precisely direct the beam to remove or transform organic or inorganic films, film stacks, residues, or particles, in atmosphere, from the top edge, top bevel, apex, bottom bevel, and bottom edge of the substrate in a single process step. Reaction by-products are removed by means of an exhaust tube enveloping the reaction site. This invention permits precise control of an edge exclusion width, resulting in an increase in the number of usable die on a wafer.

Abstract: A method and apparatus for processing substrate edges is disclosed that overcomes the limitations of conventional edge processing methods and systems used in semiconductor manufacturing. The edge processing method and apparatus of this invention includes a laser and optical system to direct a beam of radiation onto a rotating substrate supported by a chuck. The optical system accurately and precisely directs the beam to remove or transform organic or inorganic films, film stacks, residues, or particles, in atmosphere, from the top edge, top bevel, apex, bottom bevel, and bottom edge of the substrate in a single process step. An optional gas injector system directs gas onto the substrate edge to aid in the reaction. Reaction by-products are removed by means of an exhaust tube enveloping the reaction site. This invention permits precise control of an edge exclusion width, resulting in an increase in the number of usable die on a wafer.

Abstract: A method and apparatus for processing substrate edges is disclosed that overcomes the limitations of conventional edge processing methods and systems used in semiconductor manufacturing. The edge processing method and apparatus of this invention includes a laser and optical system to direct a beam of radiation onto a rotating substrate supported by a chuck, in atmosphere. The optical system accurately and precisely directs the beam to remove or transform organic or inorganic films, film stacks, residues, or particles from the top edge, top bevel, apex, bottom bevel, and bottom edge of the substrate in a single process step. Reaction by-products are removed by means of an exhaust tube enveloping the reaction site. This invention permits precise control of an edge exclusion width, resulting in an increase in the number of usable die on a wafer.

Abstract: The disclosed apparatus and method provides substrate impurity doping wherein a laser rapidly scans a substrate while simultaneously a uniform laminar flow of reactive gas is injected, the interaction of the laser radiation and the dopant results in a uniform diffusion of the dopant species in all planes (X,Y,Z) of the substrate. Laser energy density, wavelength, and pulse geometry are adjustable, in a simple system for volume manufacturing, to provide depth and dose control of the dopant. The system optics can be focused to form a high resolution laser beam to directly write the doping area pattern geometry. Alternatively the laser beam can be optically expanded to form a large diameter beam for large area diffusion of the dopant through a patterned mask.

Abstract: A method and apparatus for processing substrate edges is disclosed that overcomes the limitations of conventional edge processing methods and systems used in semiconductor manufacturing. The edge processing method and apparatus of this invention includes a laser and optical system to direct a beam of radiation onto a rotating substrate supported by a chuck, in atmosphere. The optical system accurately and precisely directs the beam to remove or transform organic or inorganic films, film stacks, residues, or particles from the top edge, top bevel, apex, bottom bevel, and bottom edge of the substrate. An optional gas injector system directs gas onto the substrate edge to aid in the reaction. Process by-products are removed via an exhaust tube enveloping the reaction site. This invention permits precise control of an edge exclusion zone, resulting in an increase in the number of usable die on a wafer.

Abstract: A method and apparatus for processing substrate edges is disclosed that overcomes the limitations of conventional edge processing methods and systems used in semiconductor manufacturing. The edge processing method and apparatus of this invention includes a laser and optical system to direct a beam of radiation onto a rotating substrate supported by a chuck, in atmosphere. The optical system accurately and precisely directs the beam to remove or transform organic or inorganic films, film stacks, residues, or particles from the top edge, top bevel, apex, bottom bevel, and bottom edge of the substrate in a single process step. Reaction by-products are removed by means of an exhaust tube enveloping the reaction site. This invention permits precise control of an edge exclusion width, resulting in an increase in the number of usable die on a wafer.

Abstract: A modular wafer edge processing apparatus is disclosed that overcomes the limitations of conventional edge processing methods and systems used in semiconductor manufacturing. The modular apparatus can be integrated into wafer tracks, cluster tools, and other volume manufacturing systems. The edge processing apparatus of this invention includes a laser that can either be contained inside the module, or mounted externally to feed multiple modules and thereby reduce system cost. The apparatus contains a beam delivery subsystem to direct a beam of radiation onto the edges of a rotating substrate supported by a chuck. The optical system accurately and precisely directs the beam to remove or transform organic or inorganic films, film stacks, residues, or particles, in atmosphere, from the top edge, top bevel, apex, bottom bevel, and bottom edge of the substrate in a single process step. Reaction by-products are removed by means of an exhaust tube enveloping the reaction site.

Abstract: A method and apparatus for processing substrate edges is disclosed that overcomes the limitations of conventional edge processing methods and systems used in semiconductor manufacturing. The edge processing method and apparatus of this invention includes a laser and fiber-optic system to direct laser radiation onto a rotating substrate supported by a chuck. A laser beam is transmitted into a bundle of optical fibers, and the fibers accurately and precisely direct the beam to remove or transform organic or inorganic films, film stacks, residues, or particles, in atmosphere, from the top edge, top bevel, apex, bottom bevel, and bottom edge of the substrate in a single process step. Reaction by-products are removed by means of an exhaust tube enveloping the reaction site. This invention permits precise control of an edge exclusion width, resulting in an increase in the number of usable die on a wafer.

Abstract: A method and apparatus for processing substrate edges is disclosed that overcomes the limitations of conventional edge processing methods and systems used in semiconductor manufacturing. The edge processing method and apparatus of this invention includes a laser and optical system to direct a beam of radiation onto a rotating substrate supported by a chuck. The optical system accurately and precisely directs the beam to remove or transform organic or inorganic films, film stacks, residues, or particles, in atmosphere, from the top edge, top bevel, apex, bottom bevel, and bottom edge of the substrate in a single process step. An optional gas injector system directs gas onto the substrate edge to aid in the reaction. Reaction by-products are removed by means of an exhaust tube enveloping the reaction site. This invention permits precise control of an edge exclusion width, resulting in an increase in the number of usable die on a wafer.

Abstract: A method for removing ion implanted photoresist from a surface of a substrate is provided. The method may include introducing a gas to a reaction chamber containing the substrate; illuminating the ion implanted photoresist with radiation from a laser in the presence of the gas; and scanning the radiation across the surface in the presence of the gas to photoreactively remove the ion implanted photoresist from the surface.

Abstract: A system for removing photoresist from semiconductor wafers is disclosed. The system utilizes a solid-state laser having wavelengths in the near-visible and visible portions of the electromagnetic spectrum to remove photoresist without requiring hazardous gases or wet solutions. In addition, the system does not damage the substrate being cleaned, nor leave a carbon residue requiring further processing to remove. The system uses photon energy, oxygen, water vapor and ozone to interact with contaminants on a surface, forming a gas reaction zone (GRZ). The GRZ reacts and completely removes the photoresist or other unwanted contamination.