Abstract: A defect detection and removal apparatus including a removing unit, an image capturing unit, and a determining unit is provided. The removing unit is configured to remove at least one defective micro-element on a substrate. The image capturing unit is configured to capture a detection image of at least one defective micro-element correspondingly on the substrate. The determining unit is coupled to the image capturing unit and the removing unit. The image capturing unit executes capturing a first detection image before the removing unit executes removing a defective micro-element, and executes capturing a second detection image after the removing unit executes removing the defective micro-element. The determining unit confirms whether the defective micro-element has been removed according to the first and second detection image obtained from the image capturing unit. A defect detection and removal method is also provided.

Abstract: A storage device and a data accessing method are disclosed, wherein the storage device includes a memory circuit and a control circuit. The memory circuit includes a plurality of multi-level cells, and each of the multi-level cells is configured to store at least a first bit, a second bit and a third bit in at least a first page, a second page and a third page. The control circuit is configured to read the first bits according to a one-time reading operation related to the first bits, read the second bits according to M-times reading operations related to the second bits, and read the third bits according to N-times reading operations related to the third bits, wherein the difference between M and N is less than or equal to one.

Abstract: A semiconductor memory device includes a first dielectric wall, a second dielectric wall, first channel portions, second channel portions, an isolation wall, and a dielectric feature. The second dielectric wall is spaced apart from the first dielectric wall in a first direction. The first channel portions are disposed on a side of the first dielectric wall and are spaced apart from each other in a second direction transverse to the first direction. The second channel portions are disposed on a side of the second dielectric wall and are spaced apart from each other in the second direction. The isolation wall is located between the first dielectric wall and the second dielectric wall. The dielectric feature is disposed to separate the first dielectric wall and the isolation wall, and is disposed on the other side of the first dielectric wall opposite to the first channel portions in the first direction.

Abstract: A method for forming a semiconductor structure is provided. The method includes forming first, second and third fin structures over a substrate, forming a first dielectric material along a first trench between the first fin structure and the second fin structure and along a second trench between the second fin structure and the third fin structure, removing a first portion of the first dielectric material along the second trench while leaving a second portion of the first dielectric material along the first trench as a dielectric liner, depositing a second dielectric material over the dielectric liner and filling the first trench and the second trench, and etching back the second dielectric material until the dielectric liner is exposed. A first portion of the second dielectric material remaining in the first trench forms a dielectric wall.

Abstract: A micro light emitting diode display panel including multiple pixel structures is provided. Each of the pixel structures includes at least one sub-pixel, which includes a first micro-light-emitting chip with a first light-emitting area and a second micro-light-emitting chip with a second light-emitting area smaller than the first light-emitting area. The first micro-light-emitting chip emits light corresponding to a first luminance interval according to a first operating current interval. The second micro light-emitting chip emits light corresponding to a second luminance interval according to a second operating current interval. A gray-scale value of the second luminance interval is lower than a gray-scale value of the first luminance interval. The first micro-light-emitting chip and the second micro light-emitting chip have the same light-emitting color. The second micro-light-emitting chip has a smaller slope of a tangent line to a luminance versus current curve than the first micro-light-emitting chip.

Abstract: A defect detecting apparatus and method are provided. The defect detecting apparatus receives an image to be tested. The defect detecting apparatus detects the image to be tested through a defect detecting model to generate an anomaly score corresponding to the image to be tested, and the defect detecting model is generated based on the training of a generative adversarial network and a plurality of normalized loss functions. The defect detecting apparatus compares the anomaly score with an anomaly score threshold to determine whether the image to be tested is a defective image.

Abstract: A memory device and an operation method thereof are provided. The memory device includes: a memory array including a plurality of memory cells for storing a plurality of weights; a multiplication circuit coupled to the memory array, for performing bitwise multiplication on a plurality of input data and the weights to generate a plurality of multiplication results; a counting unit coupled to the multiplication circuit, for performing bitwise counting on the multiplication results to generate a MAC (multiplication and accumulation) operation result.

Abstract: The present disclosure relates to a method of preventing or treating brain cancers or brain metastases with mesoporous silica nanoparticles (MSNs) loaded with taxane-based chemotherapeutic drugs, in particular paclitaxel (PTX), cabazitaxel (CTX) or docetaxel (DTX), and the MSNs loaded with PTX, CTX or DTX.

Abstract: A memory system for maintaining data consistency and an operation method thereof are provided. The operation method includes: receiving a first data in a first cache of a first memory from a processor; reading the first data from the first cache and writing the first data as a redo log into a log buffer of the first memory; writing the redo log from the log buffer into a memory controller of the processor; performing an in-memory copy in a second memory to copy a second data as an undo log, wherein the second data is an old version of the first data; and writing the redo log from the memory controller into the second memory for covering the second data by the redo log as a third data, wherein the redo log, the third data and the first data are the same.

Abstract: An electrolytic eluent generator includes an electrolyte reservoir and at least one eluent generation cartridge. The electrolyte reservoir includes a chamber containing an aqueous electrolyte solution; and a first electrode. The at least one eluent generation cartridge includes a platinum mesh electrode; a polymer screen; a plurality of reinforced membranes; a membrane washer; and a spacer including a central post and an annular projection.

Abstract: Treatment of multiple myeloma with a combination of panobinostat and bortezomib at specified doses adjusted for safety.

Abstract: A memory device and an operation method thereof are provided. The memory device includes: a plurality of page buffers, storing an input data; a plurality of memory planes coupled to the page buffers, based on received addresses of the memory planes, a plurality of weights stored in the memory planes, the memory planes performing bit multiplication on the weights and the input data in the page buffers in parallel to generate a plurality of bit multiplication results in parallel, the bit multiplication results stored back to the page buffers; and at least one accumulation circuit coupled to the page buffers, for performing bit accumulation on the bit multiplication results of the memory planes in parallel or in sequential to generate a multiply-accumulate (MAC) operation result.

Abstract: An integrated circuit includes a transistor having a plurality of semiconductor nanostructures arranged in a stack and corresponding to channel regions of the transistor. The transistor includes a source/drain region in contact with the channel regions. The transistor includes a silicide that extends downward along a side of the source/drain region.

Abstract: A memory system for maintaining data consistency and an operation method thereof are provided. The operation method includes: receiving a first data in a first cache of a first memory from a processor; reading the first data from the first cache and writing the first data as a redo log into a log buffer of the first memory; writing the redo log from the log buffer into a memory controller of the processor; performing an in-memory copy in a second memory to copy a second data as an undo log, wherein the second data is an old version of the first data; and writing the redo log from the memory controller into the second memory for covering the second data by the redo log as a third data, wherein the redo log, the third data and the first data are the same.

Abstract: A method for generating goods modeling data comprises obtaining a platform image associated with a platform, a plurality of first goods images and a plurality of second goods images, wherein the first goods images and the second goods images correspond to different viewing angles respectively, and an image synthesis processing is performed according to the platform image and at least one of the first goods images and the second goods images to generate a synthesized image. The synthesized image includes a plurality of adjacent or partially overlapping image areas which correspond to at least many of the viewing angles. The image areas include a first and a second image areas. The first image area includes one of the first goods images or one of the second goods images. The second image area includes one of the first goods images or one of the second goods images.

Abstract: A plasma system is provided. The plasma system includes a low-temperature atmospheric-pressure plasma source and a water-mist supplying source. The low-temperature atmospheric-pressure plasma source has a nozzle. The nozzle is configured to eject a plasma. The water-mist supplying source is configured to deliver a water mist to the plasma ejected from the nozzle.

Abstract: A semiconductor device includes a substrate and a transistor. The transistor includes a first channel region overlying the substrate and a source/drain region in contact with the first channel region. The source/drain region has a first surface opposite the substrate and side surfaces extending from the first surface. A silicide layer is disposed on the first surface and the side surfaces of the source/drain region.

Abstract: A storage device and a data accessing method are disclosed, wherein the storage device includes a memory circuit and a control circuit. The memory circuit includes a plurality of multi-level cells, and each of the multi-level cells is configured to store at least a first bit, a second bit and a third bit in at least a first page, a second page and a third page. The control circuit is configured to read the first bits according to a one-time reading operation related to the first bits, read the second bits according to M-times reading operations related to the second bits, and read the third bits according to N-times reading operations related to the third bits, wherein the difference between M and N is less than or equal to one.

Abstract: A memory device and an operation method thereof are provided. The memory device includes: a plurality of page buffers, storing an input data; a plurality of memory planes coupled to the page buffers, based on received addresses of the memory planes, a plurality of weights stored in the memory planes, the memory planes performing bit multiplication on the weights and the input data in the page buffers in parallel to generate a plurality of bit multiplication results in parallel, the bit multiplication results stored back to the page buffers; and at least one accumulation circuit coupled to the page buffers, for performing bit accumulation on the bit multiplication results of the memory planes in parallel or in sequential to generate a multiply-accumulate (MAC) operation result.

Abstract: An electronic device including a device body, a first antenna module, a second antenna module, and an electrically conductive structure is provided. The first antenna module is disposed on the device body, and the second antenna module is disposed on the device body. The electrically conductive structure includes a first section and a second section, and the first section is connected between the first antenna module and the second section. The first section is extended along a first direction, the second section is extended toward the second antenna module along a second direction not parallel to the first direction, and the second section and the second antenna module have a gap therebetween.