Abstract: A shallow trench isolation (STI) and method of forming the same is provided. The STI structure includes an upper insulating portion and a lower insulating portion, where the lower insulating portion includes a first insulator and an insulating layer surrounding the first insulator, the upper insulating portion includes a second insulator and a buffer layer surrounding the second insulator. A part of the buffer layer interfaces between the first insulator and the second insulator, and the outer sidewall of the buffer layer and the sidewall of the first insulator are leveled.

Abstract: A magnetoresistive random access memory (MRAM) element includes a bottom electrode embedded in a first insulating layer; an annular reference layer in a first via hole of a second insulating layer on the first insulating layer, the annular reference layer being situated above the bottom electrode; a first gap fill material layer filling the first via hole; a barrier layer covering the annular reference layer, the second insulating layer and the first gap fill material layer; an annular free layer in a second via hole of a third insulating layer on the second insulating layer, the annular free layer being situated above the annular reference layer; and a top electrode stacked on the annular free layer.

Abstract: A method of forming shallow trench isolation structures including the steps of forming a trench in a substrate, filling a first insulating layer in the lower portion of the trench and defining a recess at the upper portion of the trench, forming a buffer layer on the sidewall of the recess, filling a second insulating layer in the recess, and performing a steam annealing process to transform the substrate surrounding the first insulating layer into an oxide layer.

Abstract: An RRAM includes a resistive layer including a dielectric layer and surplus oxygen ions or nitrogen ions from a treatment on the dielectric layer after the dielectric layer is formed. When the RRAM is applied with a voltage, the oxygen ions or nitrogen ions occupy vacancies in the dielectric layer to increase resistance of the resistive layer. When the RRAM is applied with another voltage, the oxygen ions or nitrogen ions are removed from the vacancies to lower the resistance of the resistive layer.

Abstract: An apparatus for friction reduction and biofouling prevention is invented, which consists of an anodic electro-catalytic layer and a cathodic electro-catalytic layer installed on the submerged surface of a carrier. There is an insulating filling between the anodic layer and the cathodic layer. The layered coatings are applied with the use of electric arc spraying technique. A first DC power supply unit is connected to the anodic layer and the cathodic layer. The anodic layer, the cathodic layer, the DC power supply unit, and water together form the conducting path for water electro-catalysis. Hydrogen and oxygen gases are produced to form a thin gas film on the submerged surface to reduce friction and prevent biofouling on the carrier. Alternatively, the apparatus produces hydroxyl radicals to kill marine microorganisms and reduce the risk of biofouling and biocorrosion.

Abstract: A shallow trench isolation (STI) and method of forming the same is provided. The STI structure includes an upper insulating portion and a lower insulating portion, where the lower insulating portion includes a first insulator and an insulating layer surrounding the first insulator, the upper insulating portion includes a second insulator and a buffer layer surrounding the second insulator. Apart of the buffer layer interfaces between the first insulator and the second insulator, and the outer sidewall of the buffer layer and the sidewall of the first insulator are leveled.

Abstract: A method of forming shallow trench isolation structures including the steps of forming a trench in a substrate, filling a first insulating layer in the lower portion of the trench and defining a recess at the upper portion of the trench, forming a buffer layer on the sidewall of the recess, filling a second insulating layer in the recess, and performing a steam annealing process to transform the substrate surrounding the first insulating layer into an oxide layer.

Abstract: An exposed lens retroreflective article that includes a binder layer; a layer of spaced apart optical elements that are partially embedded in the binder layer; a penetrated colored layer that is located between the spaced apart optical elements; and a reflective layer that is located functionally behind the layer of optical elements and the penetrated colored layer.

Abstract: N-halaminehydantoinyl epoxide compounds which can be used for the construction of coatings and materials which can be rendered biocidal by exposure to halogen solutions either before or after curing the coating or material are disclosed. The biocidal coatings and materials can then be used to inactivate pathogenic microorganisms such as bacteria, fungi, and yeasts, as well as virus particles, which can cause infectious diseases, and those microorganisms which cause noxious odors and unpleasant coloring such as mildew. The coatings are compatible with a variety of substrates including, but not limited to, cellulose, chitin, chitosan, synthetic fibers, cement grout, latex caulk, acrylic films, polyurethanes, plastics and paints.

Abstract: A shallow trench isolation (STI) and method of forming the same is provided. The STI structure comprises an upper insulating portion and a lower insulating portion, wherein the lower insulating portion includes a first insulator and an insulating layer surrounding the first insulator, the upper insulating portion includes a second insulator and a buffer layer surrounding the second insulator. A part of the buffer layer interfaces between the first insulator and the second insulator, and the outer sidewall of the buffer layer and the sidewall of the first insulator are leveled.

Abstract: A shallow trench isolation (STI) and method of forming the same is provided. The STI structure comprises an upper insulating portion and a lower insulating portion, wherein the lower insulating portion includes a first insulator and an insulating layer surrounding the first insulator, the upper insulating portion includes a second insulator and a buffer layer surrounding the second insulator. A part of the buffer layer interfaces between the first insulator and the second insulator, and the outer sidewall of the buffer layer and the sidewall of the first insulator are leveled.

Abstract: A method for fabricating fin-shaped field-effect transistor (FinFET) is disclosed. The method includes the steps of: providing a substrate; forming a fin-shaped structure on the substrate; forming a first gate structure on the fin-shaped structure; forming a first epitaxial layer in the fin-shaped structure adjacent to the first gate structure; forming an interlayer dielectric layer on the first gate structure and the first epitaxial layer; forming an opening in the interlayer dielectric layer to expose the first epitaxial layer; forming a silicon cap on the first epitaxial layer; and forming a contact plug in the opening.

Abstract: A device with microbubble-induced superhydrophobic surfaces for drag reduction and biofouling prevention includes an anodic microporous plate, a cathodic microporous plate, and a DC power supply. The anodic microporous plate and the cathodic microporous plate are mounted to a hull surface of a ship. The DC power supply includes a positive pole electrically connected to the anodic microporous plate and a negative pole electrically connected to the cathodic microporous plate. Seawater is electrolyzed to generate hydrogen microbubbles adjacent to a surface of the cathodic microporous plate and to generate oxygen microbubbles adjacent to a surface of the anodic microporous plate, forming superhydrophobic surfaces on the surfaces of the anodic microporous plate and the cathodic microporous plate. Electric current flows through the anodic microporous plate and the cathodic microporous plate to prevent biofouling.

Abstract: A trace identifier is sent between a database client and a database server using a pre-login data package along with pre-login connection open requests through the TDS protocol. The trace identifier gets logged by client-side connection-related traces, by server-side traces, and by database engine traces. The trace identifier can be used to exactly correlate a physical connection on the client to a physical connection on the server. This enhances troubleshooting of the database system, particularly when there are many concurrent users and threads.

Abstract: A trace header with an activity identifier is sent between a client and a database server as part of a request message stream. The activity identifier gets logged by client-side connection-related traces, by server-side traces, and by database engine traces. The activity identifier can be used to exactly correlate a thread on the client to threads on the server. Additionally, specific threads within a database engine may be correlated using the activity identifier to track the threads that processed a particular request. This enhances troubleshooting of the database system, particularly when there are many concurrent users and threads.

Abstract: A bi-stable quantum wire array of self-assembled nano-medicine and its process present in the invention. The bi-stable quantum wire array with quantum bit and kondo effect is prepared by self-assembling an oxygen radical antagonist of antioxidase, a ?-receptor agonist, a P2 receptor agonist, a calcium antagonist of phenyl alkyl amines, and/or a nucleotide monomer of purines and its binary, ternary, quaternary or quinary compounds and using the interaction of inelastic electron tunneling. The invention not only benefits mechanisms-targeted multifunctional device discoveries, but also profits inventions of nanometer structures, novel materials, quantum calculation devices, biosensors and quantum bit magnetic random access memories (MRAM).

Abstract: A magnetoresistive random access memory (MRAM) element includes a bottom electrode embedded in a first insulating layer; an annular reference layer in a first via hole of a second insulating layer on the first insulating layer, the annular reference layer being situated above the bottom electrode; a first gap fill material layer filling the first via hole; a barrier layer covering the annular reference layer, the second insulating layer and the first gap fill material layer; an annular free layer in a second via hole of a third insulating layer on the second insulating layer, the annular free layer being situated above the annular reference layer; and a top electrode stacked on the annular free layer.

Abstract: A magnetoresistive random access memory (MRAM) element includes a bottom electrode embedded in a first insulating layer; an annular reference layer in a first via hole of a second insulating layer on the first insulating layer, the annular reference layer being situated above the bottom electrode; a first gap fill material layer filling the first via hole; a barrier layer covering the annular reference layer, the second insulating layer and the first gap fill material layer; an annular free layer in a second via hole of a third insulating layer on the second insulating layer, the annular free layer being situated above the annular reference layer; and a top electrode stacked on the annular free layer.

Abstract: A method for fabricating an RRAM is provided. First, a bottom electrode is formed. A resistive layer is formed on the bottom electrode. A top electrode is then formed on the resistive layer, wherein the top electrode is selected from the group consisting of indium tin oxide (ITO) and indium zinc oxide (IZO). Finally, the top electrode is irradiated with UV light.

Abstract: A single-sided access device includes an active fin structure comprising a source contact area and a drain contact area separated from each other by an isolation region therebetween; a trench isolation structure disposed at one side of the active fin structure, wherein the trench isolation structure intersects with the isolation region between the source contact area and the drain contact area; a sidewall gate disposed under the isolation region and on the other side of the active fin structure opposite to the trench isolation structure so that the active fin structure is sandwiched by the trench isolation structure and the sidewall gate, wherein the sidewall gate has multi-fingers that engage with the active fin structure; and a gate dielectric layer between the sidewall gate and the active fin structure.