Abstract: A semiconductor device comprising a substrate having a first conductivity type, the substrate having a top surface and a bottom surface, a first buried layer disposed in the substrate at a first depth from the top surface, wherein the first buried layer has a second conductivity type and a first doping concentration, a second buried layer adjacent and surrounding the first buried layer at the first depth, wherein the second buried layer has the second conductivity type and a second doping concentration, wherein the second doping concentration is less than the first doping concentration, and an isolation trench disposed in the substrate and surrounding the second buried layer, wherein the isolation trench extends from the top surface of the substrate to a second depth, the second depth exceeding the first depth.

Abstract: In one embodiment, a semiconductor die includes a polycrystalline semiconductor resistor structure (poly resistor structure). The poly resistor structure includes a resistive path between a first terminal and a second terminal. The poly resistor structure includes a first region having a net first conductivity type dopant concentration located in the resistance path and a second region having a net second conductivity type dopant concentration located in the resistance path. A silicide structure is located on both a first portion of the first region and a first portion of the second region to electrically connect the first portion of the first region and the first portion of the second region. In some embodiments, poly resistor structures with different conductivity type regions can be connected together.

Abstract: A construction method for reinforcing and repairing a steel pipe pile for offshore wind power includes the following steps. Installing multiple support ribs on an outer wall of a steel pipe pile to be repaired along a circumferential direction. Placing multiple support plate components on the support ribs and performing splicing along the outer wall of the steel pipe pile to form an annular support plate assembly. Installing multiple hoop cylinder components on the support plate assembly, performing splicing along the outer wall of the steel pipe pile to form an annular hoop cylinder assembly, and forming a grouting cavity between the hoop cylinder assembly and the steel pipe pile. Connecting grouting pipelines to grouting ports of the hoop cylinder assembly, and performing a grouting operation. After grouting, forming a reinforcement and repair structure on the outer wall of the steel pipe pile when grouting materials are solidified.

Abstract: A method for protecting a novel anti-drop submarine cable includes: assembling a traction assembly, a standard bending protection section and a protection reinforcement section sequentially to form a submarine-cable-protection device, and a submarine cable passing through it; connecting a traction rope of the traction assembly to a reserved traction rope pre-buried in a single pile foundation, and enabling the submarine cable and the submarine-cable-protection device by a traction device passing through a reserved hole of the foundation; moving the assembled sets forward until the traction rope is lifted and unmovable, enabling a retaining ring of the protection reinforcement section to abut against the reserved hole, installing the traction rope on the foundation by shackles; pulling the reserved traction rope to a proper length, fixing the submarine cable to installation base.

Abstract: A pile foundation with an anti-impact structure for offshore wind power and a construction method thereof are provided. The anti-impact structure is sleeved on the pile foundation, and includes a first hoop, an impact absorption assembly and a second hoop. The impact absorption assembly includes a plurality of impact absorption rollers arranged around the pile foundation. Each of the impact absorption rollers includes a support shaft mechanism, an elastic absorber, a first sliding mechanism and a second sliding mechanism. The first sliding mechanism is slidably connected to the first hoop. The second sliding mechanism is slidably connected to the second hoop. The support shaft mechanism is rotatable relative to the first sliding mechanism and the second sliding mechanism.

Abstract: A capacitor includes an electrode implemented in an electrode well of a substrate. The electrode well has a net N-type dopant concentration. The capacitor includes an electrode implemented in a conductive structure located above the substrate. The electrodes are separated by a dielectric layer located between the electrodes. A first tub region having a net P-type conductivity dopant concentration is located below and laterally surrounds the electrode well and a second tub region having a net N-type conductivity dopant concentration is located below and laterally surrounds the first tub region and the electrode well.

Abstract: A capacitor includes an electrode implemented in an electrode well of a substrate. The electrode well has a net N-type dopant concentration. The capacitor includes an electrode implemented in a conductive structure located above the substrate. The electrodes are separated by a dielectric layer located between the electrodes. A first tub region having a net P-type conductivity dopant concentration is located below and laterally surrounds the electrode well and a second tub region having a net N-type conductivity dopant concentration is located below and laterally surrounds the first tub region and the electrode well.

Abstract: A method for manufacturing a semiconductor device includes forming a plate structure over an isolation region. A drain electrode electrically connected to a drift region underlying the isolation region is formed, wherein the drain electrode is separated from a first location of the plate structure by a first distance along a central axis of an active area of the semiconductor device in a direction of a current flow between a source and a drain of the semiconductor device, the drain electrode is separated from a second location of the plate structure by a second distance along a line parallel to the central axis and within the active area. The first distance is less than the second distance.

Abstract: The present belongs to offshore wind power engineering field, and particularly relates to a convenient-to-disassemble underwater penetration system for offshore wind power and an operation method thereof. The system includes a penetration device, a suction pump, a sonar ranging module and a control module. The penetration device is configured to be detachably butted with a suction bucket. The suction pump is configured to suck the suction bucket by the penetration device to settle the suction bucket. The sonar ranging module is configured to acquire settlement depth data of the suction bucket. The control module is configured to receive the data and to control the suction pump to work according to it, thereby achieving synchronous settlement of different suction buckets.

Abstract: The present invention is a grouting method for single pile rock-socketed foundation for offshore wind power, comprising: driving a steel casing into an overburden layer to dig the overburden layer and a rock stratum so as to dig a pile hole; hoisting a steel pipe pile into the steel casing and positioning the steel pipe pile in the pile hole, wherein an annular cavity is formed between the inner walls of the steel pipe pile and the pile hole and the bottom of the steel casing; grouting a first grouting layer to the bottom of a pipe hole of the steel pipe pile; grouting a plurality of grouting layers into the upper end of the first grouting layer in the annular cavity; and pulling out the steel casing, wherein after a grouting solution is aged, the steel pipe pile is stably connected to the overburden layer and the rock stratum.

Abstract: A testing method and apparatus is disclosed for testing an integrated circuit device (100) which has a dedicated ground bias pad (121) connected across a high voltage electrostatic discharge clamp circuit (123) to a well-driving ground pad (122) by applying a first voltage to the dedicated ground bias pad to bias a wafer substrate (101) while simultaneously applying a second voltage to the well-driving ground pad to bias the well region (103), where the first and second voltage create a stressing voltage across a buried insulator layer (102, 105) in the integrated circuit device so that a screening test can be conducted to screen for a defect (106) in the buried insulator layer by measuring a leakage current.

Abstract: A method for manufacturing a semiconductor device includes forming a plate structure over an isolation region. A drain electrode electrically connected to a drift region underlying the isolation region is formed, wherein the drain electrode is separated from a first location of the plate structure by a first distance along a central axis of an active area of the semiconductor device in a direction of a current flow between a source and a drain of the semiconductor device, the drain electrode is separated from a second location of the plate structure by a second distance along a line parallel to the central axis and within the active area. The first distance is less than the second distance.

Abstract: The present invention belongs to the technical field of offshore wind power construction and particularly relates to a system and a method for sealing expanded polymer-based pile shoes for a jacket. The system comprises a jacket disposed on a seabed, several pile shoes arranged around a lower end of the jacket, and several steel pipe piles inserted into the seabed, wherein the steel pipe piles are inserted into the corresponding pile shoes. The system is characterized in that gaps between the pile shoes and the steel pipe piles are respectively filled with concrete and an expanded high polymer from top to bottom, an annular elastic diaphragm is further connected to the inner walls of the pile shoes, and the expanded polymer is wrapped by the elastic diaphragm, such that the expanded polymer is isolated from the steel pipe piles and the concrete.

Abstract: A device (100) includes a substrate (101-106) with an upper semiconductor layer, buried semiconductor layer, and a DTI structure (107-108) defining an active device region; a dummy LDMOS device (121) in the active device region which includes a grounded drain (D1) in a drift region (105), a source (S1, S2) in a body region (109) which extends to contact the buried semiconductor layer, a gate electrode (G1-G4) formed so that the source and at least part of the gate electrode are connected with the body implant region, and a buffering semiconductor layer portion (104) adjacent the DTI structure; and one or more active LDMOS devices (122) positioned in the active device region to be separated from the DTI structure by the dummy LDMOS device (121) which reduces an electric field across the sidewall insulator layer (107) in the DTI structure.

Abstract: The present invention belongs to the field of offshore wind power and, in particular, relates to system for transporting hydrogen produced from seawater and method based on an existing offshore wind power plant. The system comprises a wind generator, a seawater electrolytic cell device and a hydrogen transporting unit, wherein the wind generator is configured for converting wind energy into electric energy, the seawater electrolytic cell device is configured for electrolyzing seawater by making using of electric energy supplied by the wind generator and the hydrogen transporting unit is configured for transporting hydrogen produced by the seawater electrolytic cell device to a land. According to the present invention, by combining offshore wind power with seawater hydrogen production, resource advantages of the offshore wind power plant is utilized fully, so that the seawater hydrogen production cost is lowered.

Abstract: Disclosed is a pile-cylinder-truss composite offshore wind turbine foundation. The pile-cylinder-truss composite offshore wind turbine foundation includes a truss structure, a suction cylinder and a pile foundation. The suction cylinder is connected to a bottom portion of the truss structure, and an embedded sleeve for mounting the pile foundation is provided on the suction cylinder. The embedded sleeve is located inside, at an edge of or outside the suction cylinder. The present invention also provides a construction process of the pile-cylinder-truss composite offshore wind turbine foundation.

Abstract: A device (100) includes a substrate (101-106) with an upper semiconductor layer, buried semiconductor layer, and a DTI structure (107-108) defining an active device region; a dummy LDMOS device (121) in the active device region which includes a grounded drain (D1) in a drift region (105), a source (S1, S2) in a body region (109) which extends to contact the buried semiconductor layer, a gate electrode (G1-G4) formed so that the source and at least part of the gate electrode are connected with the body implant region, and a buffering semiconductor layer portion (104) adjacent the DTI structure; and one or more active LDMOS devices (122) positioned in the active device region to be separated from the DTI structure by the dummy LDMOS device (121) which reduces an electric field across the sidewall insulator layer (107) in the DTI structure.

Abstract: The present invention is a grouting method for single pile rock-socketed foundation for offshore wind power, comprising: driving a steel casing into an overburden layer to dig the overburden layer and a rock stratum so as to dig a pile hole; hoisting a steel pipe pile into the steel casing and positioning the steel pipe pile in the pile hole, wherein an annular cavity is formed between the inner walls of the steel pipe pile and the pile hole and the bottom of the steel casing; grouting a first grouting layer to the bottom of a pipe hole of the steel pipe pile; grouting a plurality of grouting layers into the upper end of the first grouting layer in the annular cavity; and pulling out the steel casing, wherein after a grouting solution is aged, the steel pipe pile is stably connected to the overburden layer and the rock stratum.

Abstract: A testing method and apparatus is disclosed for testing an integrated circuit device (100) which has a dedicated ground bias pad (121) connected across a high voltage electrostatic discharge clamp circuit (123) to a well-driving ground pad (122) by applying a first voltage to the dedicated ground bias pad to bias a wafer substrate (101) while simultaneously applying a second voltage to the well-driving ground pad to bias the well region (103), where the first and second voltage create a stressing voltage across a buried insulator layer (102, 105) in the integrated circuit device so that a screening test can be conducted to screen for a defect (106) in the buried insulator layer by measuring a leakage current.

Abstract: The present invention belongs to the technical field of offshore wind power construction and particularly relates to a system and a method for sealing expanded polymer-based pile shoes for a jacket. The system comprises a jacket disposed on a seabed, several pile shoes arranged around a lower end of the jacket, and several steel pipe piles inserted into the seabed, wherein the steel pipe piles are inserted into the corresponding pile shoes. The system is characterized in that gaps between the pile shoes and the steel pipe piles are respectively filled with concrete and an expanded high polymer from top to bottom, an annular elastic diaphragm is further connected to the inner walls of the pile shoes, and the expanded polymer is wrapped by the elastic diaphragm, such that the expanded polymer is isolated from the steel pipe piles and the concrete.