Patents by Inventor Rongjun Wang

Rongjun Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20090087982
    Abstract: Embodiments of the invention provide processes for selectively forming a ruthenium-containing film on a copper surface over exposed dielectric surfaces. Thereafter, a copper bulk layer may be deposited on the ruthenium-containing film. In one embodiment, a method for forming layers on a substrate is provided which includes positioning a substrate within a processing chamber, wherein the substrate contains a copper-containing surface and a dielectric surface, exposing the substrate to a ruthenium precursor to selectively form a ruthenium-containing film over the copper-containing surface while leaving exposed the dielectric surface, and depositing a copper bulk layer over the ruthenium-containing film.
    Type: Application
    Filed: September 29, 2008
    Publication date: April 2, 2009
    Inventors: RONGJUN WANG, Hua Chung, Jick M. Yu, Praburam Gopalraja
  • Publication number: 20080237029
    Abstract: A method and resultant produce of forming barrier layer based on ruthenium tantalum in a via or other vertical interconnect structure through a dielectric layer in a multi-level metallization. The RuTa layer in a RuTa/RuTaN bilayer, which may form discontinuous islands, is actively oxidized, preferably in an oxygen plasma, to thereby bridge the gaps between the islands. Alternatively, ruthenium tantalum oxide is reactive sputtered onto the RuTaN or directly onto the underlying dielectric by plasma sputtering a RuTa target in the presence of oxygen.
    Type: Application
    Filed: March 26, 2007
    Publication date: October 2, 2008
    Applicant: Applied Materials, Inc.
    Inventors: Xianmin TANG, Hua Chung, Rongjun Wang, Praburam Gopalraja, Jick M. Yu, Jenn Yue Wang
  • Publication number: 20080190760
    Abstract: An integrated copper deposition process, particularly useful for forming a copper seed layer in a narrow via prior to electrochemical plating of copper, including at least one cycle of sputter deposition of copper followed by sputter etching of the deposited copper, preferably performed in a same sputter chamber. The deposition is performed under conditions promoting high copper ionization fractions and strong wafer biasing to draw the copper ions into the via. The etching may be done with argon ions, preferably inductively excited by an RF coil around the chamber, or by copper ions, which may be formed with high target power and intense magnetron or by use of the RF coil. Two or more cycles of deposition/etch may be performed. A final flash deposition may be performed with high copper ionization and low wafer biasing.
    Type: Application
    Filed: August 14, 2007
    Publication date: August 14, 2008
    Applicant: Applied Materials, Inc.
    Inventors: XIANMIN TANG, Arvind Sundarrajan, Daniel Lubben, Qian Luo, Tza-Jing Gung, Anantha Subramani, Hua Chung, Xinyu Fu, Rongjun Wang, Yong Cao, Jick Yu, John Forster, Praburam Gopalraja
  • Publication number: 20080083610
    Abstract: A plasma sputter chamber and process for sputtering ruthenium and tantalum at low pressure or with self-sustained sputtering (SSS). The source magnetron is strongly unbalanced and of sufficient size to project the unbalanced magnetic field toward the wafer to increase the ionization probability. Sputter etch uniformity is increased by the use of an auxiliary magnet system rotating with the source magnetron but placed towards the center of rotation. It may be a larger, nearly balanced auxiliary magnetron with an outer polarity matching that of the source magnetron or an array of magnets of that polarity. An integrated process includes a directional deposition of the refractory metal and its nitride, a sputter etch, and a flash deposition.
    Type: Application
    Filed: March 22, 2007
    Publication date: April 10, 2008
    Applicant: Applied Materials, Inc.
    Inventors: Xianmin Tang, Hua Chung, Rongjun Wang, Tza-Jing Gung, Praburam Gopalraja, Jick Yu, Hong Yang
  • Publication number: 20080032041
    Abstract: In one embodiment, a method for forming a tantalum-containing material on a substrate is provided which includes heating a liquid tantalum precursor containing tertiaryamylimido-tris(dimethylamido) tantalum (TAIMATA) to a temperature of at least 30° C. to form a tantalum precursor gas and exposing the substrate to a continuous flow of a carrier gas during an atomic layer deposition process. The method further provides exposing the substrate to the tantalum precursor gas by pulsing the tantalum precursor gas into the carrier gas and adsorbing the tantalum precursor gas on the substrate to form a tantalum precursor layer thereon. Subsequently, the tantalum precursor layer is exposed to at least one secondary element-containing gas by pulsing the secondary element-containing gas into the carrier gas while forming a tantalum barrier layer on the substrate.
    Type: Application
    Filed: July 3, 2007
    Publication date: February 7, 2008
    Inventors: Christophe Marcadal, Rongjun Wang, Hua Chung, Nirmalya Maity
  • Publication number: 20070190780
    Abstract: Methods for processing substrate to deposit barrier layers of one or more material layers by atomic layer deposition are provided. In one aspect, a method is provided for processing a substrate including depositing a metal nitride barrier layer on at least a portion of a substrate surface by alternately introducing one or more pulses of a metal containing compound and one or more pulses of a nitrogen containing compound and depositing a metal barrier layer on at least a portion of the metal nitride barrier layer by alternately introducing one or more pulses of a metal containing compound and one or more pulses of a reductant. A soak process may be performed on the substrate surface before deposition of the metal nitride barrier layer and/or metal barrier layer.
    Type: Application
    Filed: March 27, 2007
    Publication date: August 16, 2007
    Inventors: HUA CHUNG, Rongjun Wang, Nirmalya Maity
  • Patent number: 7241686
    Abstract: In one example of the invention, a method for depositing a tantalum-containing material on a substrate in a process chamber is provided which includes exposing the substrate to a tantalum precursor that contains TAIMATA and to at least one secondary precursor to deposit a tantalum-containing material during an atomic layer deposition (ALD) process. The ALD process is repeated until the tantalum-containing material is deposited having a predetermined thickness. Usually, the TAIMATA is preheated prior to pulsing the tantalum precursor into the process chamber. Subsequently, a metal layer, such as tungsten or copper, may be deposited on the tantalum-containing material. The tantalum-containing material may contain tantalum, tantalum nitride, tantalum silicon nitride, tantalum boron nitride, tantalum phosphorous nitride, or tantalum oxynitride. The tantalum-containing material may be deposited as a barrier or adhesion layer within a via or as a gate electrode material within a source/drain device.
    Type: Grant
    Filed: February 19, 2005
    Date of Patent: July 10, 2007
    Assignee: Applied Materials, Inc.
    Inventors: Christophe Marcadal, Rongjun Wang, Hua Chung, Nirmalya Maity
  • Patent number: 7211508
    Abstract: Methods for processing substrate to deposit barrier layers of one or more material layers by atomic layer deposition are provided. In one aspect, a method is provided for processing a substrate including depositing a metal nitride barrier layer on at least a portion of a substrate surface by alternately introducing one or more pulses of a metal containing compound and one or more pulses of a nitrogen containing compound and depositing a metal barrier layer on at least a portion of the metal nitride barrier layer by alternately introducing one or more pulses of a metal containing compound and one or more pulses of a reductant. A soak process may be performed on the substrate surface before deposition of the metal nitride barrier layer and/or metal barrier layer.
    Type: Grant
    Filed: June 18, 2004
    Date of Patent: May 1, 2007
    Assignee: Applied Materials, Inc.
    Inventors: Hua Chung, Rongjun Wang, Nirmalya Maity
  • Publication number: 20070059502
    Abstract: A fabrication method and a product for the deposition of a conductive barrier or other liner layer in a vertical electrical interconnect structure. One embodiment includes within a a hole through a dielectric layer a barrier layer of RuTaN, an adhesion layer of RuTa, and a copper seed layer forming a liner for electroplating of copper. The ruthenium content is preferably greater than 50 at % and more preferably at least 80 at % but less than 95 at %. The barrier and adhesion layers may both be sputter deposited. Other platinum-group elements substitute for the ruthenium and other refractory metals substitute for the tantalum. Aluminum alloying into RuTa when annealed presents a moisture barrier. Copper contacts include different alloying fractions of RuTa to shift the work function to the doping type.
    Type: Application
    Filed: August 29, 2006
    Publication date: March 15, 2007
    Applicant: Applied Materials, Inc.
    Inventors: Rongjun Wang, Hua Chung, Xianmin Tang, Jenn Wang, Wei Wang, Yoichiro Tanaka, Jick Yu, Praburam Gopalraja
  • Publication number: 20060019495
    Abstract: In one example of the invention, a method for depositing a tantalum-containing material on a substrate in a process chamber is provided which includes exposing the substrate to a tantalum precursor that contains TAIMATA and to at least one secondary precursor to deposit a tantalum-containing film during an atomic layer deposition (ALD) process. The ALD process is repeated until the tantalum-containing film is deposited with a predetermined thickness. Usually, the TAIMATA is preheated prior pulsing the tantalum precursor into the process chamber. A metal layer, such as tungsten or copper, may be deposited on the tantalum-containing material. The tantalum-containing material may include tantalum, tantalum nitride, tantalum silicon nitride, tantalum boron nitride, tantalum phosphorous nitride or tantalum oxynitride. The tantalum-containing material may be deposited as a barrier or adhesion layer within a via or as a gate electrode material within a source/drain device.
    Type: Application
    Filed: February 19, 2005
    Publication date: January 26, 2006
    Inventors: Christophe Marcadal, Rongjun Wang, Hua Chung, Nirmalya Maity
  • Publication number: 20050009325
    Abstract: Methods for processing substrate to deposit barrier layers of one or more material layers by atomic layer deposition are provided. In one aspect, a method is provided for processing a substrate including depositing a metal nitride barrier layer on at least a portion of a substrate surface by alternately introducing one or more pulses of a metal containing compound and one or more pulses of a nitrogen containing compound and depositing a metal barrier layer on at least a portion of the metal nitride barrier layer by alternately introducing one or more pulses of a metal containing compound and one or more pulses of a reductant. A soak process may be performed on the substrate surface before deposition of the metal nitride barrier layer and/or metal barrier layer.
    Type: Application
    Filed: June 18, 2004
    Publication date: January 13, 2005
    Inventors: Hua Chung, Rongjun Wang, Nirmalya Maity