Patents by Inventor Ronny Kern

Ronny Kern has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220293558
    Abstract: A method for forming semiconductor devices includes: attaching a glass structure to a wide band-gap semiconductor wafer having a plurality of semiconductor devices; forming at least one pad structure electrically connected to at least one doping region of a semiconductor substrate of the wide band-gap semiconductor wafer, by forming electrically conductive material within at least one opening extending through the glass structure; and reducing a thickness of the wide band-gap semiconductor wafer after attaching the glass structure. Additional methods for forming semiconductor devices are described.
    Type: Application
    Filed: June 1, 2022
    Publication date: September 15, 2022
    Inventors: Roland Rupp, Alexander Breymesser, Andre Brockmeier, Carsten von Koblinski, Francisco Javier Santos Rodriguez, Ronny Kern
  • Patent number: 11393784
    Abstract: A method for forming semiconductor devices includes attaching a glass structure to a wide band-gap semiconductor wafer having a plurality of semiconductor devices. The method further includes forming at least one pad structure electrically connected to at least one doping region of a semiconductor substrate of the wide band-gap semiconductor wafer, by forming electrically conductive material within at least one opening extending through the glass structure.
    Type: Grant
    Filed: August 30, 2017
    Date of Patent: July 19, 2022
    Assignee: Infineon Technologies AG
    Inventors: Roland Rupp, Alexander Breymesser, Andre Brockmeier, Carsten von Koblinski, Francisco Javier Santos Rodriguez, Ronny Kern
  • Publication number: 20220085174
    Abstract: A method of manufacturing a semiconductor device includes: providing a silicon carbide substrate that includes device regions and a grid-shaped kerf region laterally separating the device regions; forming a mold structure on a backside surface of the grid-shaped kerf region; forming backside metal structures on a backside surface of the device regions; and separating the device regions, wherein parts of the mold structure form frame structures laterally surrounding the backside metal structures.
    Type: Application
    Filed: November 22, 2021
    Publication date: March 17, 2022
    Inventors: Andre Brockmeier, Guenter Denifl, Ronny Kern, Michael Knabl, Matteo Piccin, Francisco Javier Santos Rodriguez
  • Patent number: 11211459
    Abstract: An auxiliary carrier and a silicon carbide substrate are provided. The silicon carbide substrate includes an idle layer and a device layer between a main surface at a front side of the silicon carbide substrate and the idle layer. The device layer includes a plurality of laterally separated device regions. Each device region extends from the main surface to the idle layer. The auxiliary carrier is structurally connected with the silicon carbide substrate at the front side. The idle layer is removed. A mold structure is formed that fills a grid-shaped groove that laterally separates the device regions. The device regions are separated, and parts of the mold structure form frame structures laterally surrounding the device regions.
    Type: Grant
    Filed: December 16, 2019
    Date of Patent: December 28, 2021
    Assignee: Infineon Technologies AG
    Inventors: Andre Brockmeier, Guenter Denifl, Ronny Kern, Michael Knabl, Matteo Piccin, Francisco Javier Santos Rodriguez
  • Publication number: 20210313431
    Abstract: A method for producing a silicon carbide component includes forming a silicon carbide layer on an initial wafer, forming a doping region of the silicon carbide component to be produced in the silicon carbide layer, and forming an electrically conductive contact structure of the silicon carbide component to be produced on a surface of the silicon carbide layer. The electrically conductive contact structure electrically contacts the doping region. Furthermore, the method includes splitting the silicon carbide layer or the initial wafer after forming the electrically conductive contact structure, such that a silicon carbide substrate at least of the silicon carbide component to be produced is split off.
    Type: Application
    Filed: June 17, 2021
    Publication date: October 7, 2021
    Inventors: Roland Rupp, Ronny Kern
  • Patent number: 11139375
    Abstract: According to an embodiment of a method described herein, a silicon carbide substrate is provided that includes a plurality of device regions. A front side metallization may be provided at a front side of the silicon carbide substrate. The method may further comprise providing an auxiliary structure at a backside of the silicon carbide substrate. The auxiliary structure includes a plurality of laterally separated metal portions. Each metal portion is in contact with one device region of the plurality of device regions.
    Type: Grant
    Filed: July 3, 2019
    Date of Patent: October 5, 2021
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Carsten Schaeffer, Alexander Breymesser, Bernhard Goller, Ronny Kern, Matteo Piccin, Roland Rupp, Francisco Javier Santos Rodriguez
  • Publication number: 20210265168
    Abstract: A process for producing an electrical contact with a first metal layer and at least one second metal layer on a silicon carbide substrate includes removing at least some of the carbon residue by a cleaning process, to clean the first metal layer. The first metal layer and/or the at least one second metal layer may be generated by sputtering deposition.
    Type: Application
    Filed: May 10, 2021
    Publication date: August 26, 2021
    Inventors: Stefan Krivec, Ronny Kern, Stefan Kramp, Gregor Langer, Hannes Winkler, Stefan Woehlert
  • Patent number: 11069778
    Abstract: A method for producing a silicon carbide component includes forming a silicon carbide layer on an initial wafer, forming a doping region of the silicon carbide component to be produced in the silicon carbide layer, and forming an electrically conductive contact structure of the silicon carbide component to be produced on a surface of the silicon carbide layer. The electrically conductive contact structure electrically contacts the doping region. Furthermore, the method includes splitting the silicon carbide layer or the initial wafer after forming the electrically conductive contact structure, such that a silicon carbide substrate at least of the silicon carbide component to be produced is split off.
    Type: Grant
    Filed: August 24, 2018
    Date of Patent: July 20, 2021
    Assignee: Infineon Technologies AG
    Inventors: Roland Rupp, Ronny Kern
  • Patent number: 11043383
    Abstract: A process for producing an electrical contact with a first metal layer and at least one second metal layer on a silicon carbide substrate includes removing at least some of the carbon residue by a chemical cleaning process, to clean the first metal layer. The first metal layer and/or the at least one second metal layer may be generated by sputtering deposition.
    Type: Grant
    Filed: May 24, 2019
    Date of Patent: June 22, 2021
    Assignee: Infineon Technologies AG
    Inventors: Stefan Krivec, Ronny Kern, Stefan Kramp, Gregor Langer, Hannes Winkler, Stefan Woehlert
  • Patent number: 10763151
    Abstract: A wafer carrier comprises a first foil, a second foil, and a chamber between the first and the second foil. The first foil has a perforation and is used for carrying the wafer. The first and the second foil are connected to each other so as to form the chamber. The chamber is configured to be evacuated to form a vacuum in the chamber, the vacuum causes an underpressure at the perforation, the underpressure forms a carrying force to the wafer to be carried.
    Type: Grant
    Filed: March 8, 2018
    Date of Patent: September 1, 2020
    Assignee: Infineon Technologies AG
    Inventors: Francisco Javier Santos Rodriguez, Roland Rupp, Ronny Kern, Josef Unterweger
  • Patent number: 10763339
    Abstract: A semiconductor device includes an n-doped monocrystalline semiconductor substrate having a substrate surface, an amorphous n-doped semiconductor surface layer at the substrate surface of the n-doped monocrystalline semiconductor substrate, and a Schottky-junction forming material in contact with the amorphous n-doped semiconductor surface layer. The Schottky-junction forming material forms at least one Schottky contact with the amorphous n-doped semiconductor surface layer.
    Type: Grant
    Filed: February 10, 2016
    Date of Patent: September 1, 2020
    Assignee: Infineon Technologies Austria AG
    Inventors: Jens Peter Konrath, Ronny Kern, Stefan Krivec, Ulrich Schmid, Laura Stoeber
  • Patent number: 10699934
    Abstract: According to various embodiments, a substrate carrier may include: a substrate-supporting region for supporting a substrate; wherein a first portion of the substrate-supporting region including a pore network of at least partially interconnected pores; wherein a second portion of the substrate-supporting region surrounds the first portion and includes a sealing member for providing a contact sealing; at least one evacuation port for creating a vacuum in the pore network, such that a substrate received over the substrate-supporting region is adhered by suction; and at least one valve configured to control a connection between the pore network and the at least one evacuation port, such that a vacuum can be maintained in the pore network; wherein the pore network includes a first pore characteristic in a first region and a second pore characteristic in a second region different from the first pore characteristic.
    Type: Grant
    Filed: October 1, 2015
    Date of Patent: June 30, 2020
    Assignee: Infineon Technologies AG
    Inventors: Francisco Javier Santos Rodriguez, Roland Rupp, Ronny Kern, Josef Unterweger
  • Publication number: 20200194558
    Abstract: An auxiliary carrier and a silicon carbide substrate are provided. The silicon carbide substrate includes an idle layer and a device layer between a main surface at a front side of the silicon carbide substrate and the idle layer. The device layer includes a plurality of laterally separated device regions. Each device region extends from the main surface to the idle layer. The auxiliary carrier is structurally connected with the silicon carbide substrate at the front side. The idle layer is removed. A mold structure is formed that fills a grid-shaped groove that laterally separates the device regions. The device regions are separated, and parts of the mold structure form frame structures laterally surrounding the device regions.
    Type: Application
    Filed: December 16, 2019
    Publication date: June 18, 2020
    Inventors: Andre Brockmeier, Guenter Denifl, Ronny Kern, Michael Knabl, Matteo Piccin, Francisco Javier Santos Rodriguez
  • Patent number: 10615040
    Abstract: A method of processing a power semiconductor device includes: providing a semiconductor body of the power semiconductor device; coupling a mask to the semiconductor body; and subjecting the semiconductor body to an ion implantation such that implantation ions traverse the mask prior to entering the semiconductor body.
    Type: Grant
    Filed: June 7, 2017
    Date of Patent: April 7, 2020
    Assignee: Infineon Technologies AG
    Inventors: Roland Rupp, Alexander Breymesser, Andre Brockmeier, Ronny Kern, Francisco Javier Santos Rodriguez, Carsten von Koblinski
  • Publication number: 20200013859
    Abstract: According to an embodiment of a method described herein, a silicon carbide substrate is provided that includes a plurality of device regions. A front side metallization may be provided at a front side of the silicon carbide substrate. The method may further comprise providing an auxiliary structure at a backside of the silicon carbide substrate. The auxiliary structure includes a plurality of laterally separated metal portions. Each metal portion is in contact with one device region of the plurality of device regions.
    Type: Application
    Filed: July 3, 2019
    Publication date: January 9, 2020
    Inventors: Carsten SCHAEFFER, Alexander Breymesser, Bernhand Goller, Ronny Kern, Matteo Piccin, Roland Rupp, Francisco Javier Santos Rodriguez
  • Publication number: 20190362973
    Abstract: A process for producing an electrical contact with a first metal layer and at least one second metal layer on a silicon carbide substrate includes removing at least some of the carbon residue by a chemical cleaning process, to clean the first metal layer. The first metal layer and/or the at least one second metal layer may be generated by sputtering deposition.
    Type: Application
    Filed: May 24, 2019
    Publication date: November 28, 2019
    Inventors: Stefan Krivec, Ronny Kern, Stefan Kramp, Gregor Langer, Hannes Winkler, Stefan Woehlert
  • Patent number: 10431698
    Abstract: According to an embodiment of a semiconductor device, the semiconductor device includes a contact layer in contact with SiC material. The contact layer includes a metal nitride having a nitrogen content in a range of 10 to 50 atomic %. The semiconductor device further includes a non-ohmic contact formed between the SiC material and the contact layer.
    Type: Grant
    Filed: January 2, 2019
    Date of Patent: October 1, 2019
    Assignee: Infineon Technologies Austria AG
    Inventors: Jens Peter Konrath, Ronny Kern, Stefan Krivec, Ulrich Schmid, Laura Stoeber
  • Publication number: 20190140111
    Abstract: According to an embodiment of a semiconductor device, the semiconductor device includes a contact layer in contact with SiC material. The contact layer includes a metal nitride having a nitrogen content in a range of 10 to 50 atomic %. The semiconductor device further includes a non-ohmic contact formed between the SiC material and the contact layer.
    Type: Application
    Filed: January 2, 2019
    Publication date: May 9, 2019
    Inventors: Jens Peter Konrath, Ronny Kern, Stefan Krivec, Ulrich Schmid, Laura Stoeber
  • Publication number: 20190067425
    Abstract: A method for producing a silicon carbide component includes forming a silicon carbide layer on an initial wafer, forming a doping region of the silicon carbide component to be produced in the silicon carbide layer, and forming an electrically conductive contact structure of the silicon carbide component to be produced on a surface of the silicon carbide layer. The electrically conductive contact structure electrically contacts the doping region. Furthermore, the method includes splitting the silicon carbide layer or the initial wafer after forming the electrically conductive contact structure, such that a silicon carbide substrate at least of the silicon carbide component to be produced is split off.
    Type: Application
    Filed: August 24, 2018
    Publication date: February 28, 2019
    Inventors: Roland Rupp, Ronny Kern
  • Patent number: 10199514
    Abstract: An embodiment of a method of manufacturing a semiconductor device includes providing a semiconductor material that comprises SiC and forming an electrically conductive contact layer on the semiconductor material. A non-ohmic contact is formed between the semiconductor material and the electrically conductive contact layer. The electrically conductive contact layer comprises a metal nitride with a nitrogen content between 10 to 50 atomic %. Additional embodiments of manufacturing a semiconductor device are described.
    Type: Grant
    Filed: January 9, 2018
    Date of Patent: February 5, 2019
    Assignee: Infineon Technologies Austria AG
    Inventors: Jens Peter Konrath, Ronny Kern, Stefan Krivec, Ulrich Schmid, Laura Stoeber