Abstract: A process for producing an electrical contact with a first metal layer and at least one second metal layer on a silicon carbide substrate includes removing at least some of the carbon residue by a chemical cleaning process, to clean the first metal layer. The first metal layer and/or the at least one second metal layer may be generated by sputtering deposition.

Abstract: According to an embodiment of a semiconductor device, the semiconductor device includes a contact layer in contact with SiC material. The contact layer includes a metal nitride having a nitrogen content in a range of 10 to 50 atomic %. The semiconductor device further includes a non-ohmic contact formed between the SiC material and the contact layer.

Abstract: According to an embodiment of a semiconductor device, the semiconductor device includes a contact layer in contact with SiC material. The contact layer includes a metal nitride having a nitrogen content in a range of 10 to 50 atomic %. The semiconductor device further includes a non-ohmic contact formed between the SiC material and the contact layer.

Abstract: A method for producing a silicon carbide component includes forming a silicon carbide layer on an initial wafer, forming a doping region of the silicon carbide component to be produced in the silicon carbide layer, and forming an electrically conductive contact structure of the silicon carbide component to be produced on a surface of the silicon carbide layer. The electrically conductive contact structure electrically contacts the doping region. Furthermore, the method includes splitting the silicon carbide layer or the initial wafer after forming the electrically conductive contact structure, such that a silicon carbide substrate at least of the silicon carbide component to be produced is split off.

Abstract: An embodiment of a method of manufacturing a semiconductor device includes providing a semiconductor material that comprises SiC and forming an electrically conductive contact layer on the semiconductor material. A non-ohmic contact is formed between the semiconductor material and the electrically conductive contact layer. The electrically conductive contact layer comprises a metal nitride with a nitrogen content between 10 to 50 atomic %. Additional embodiments of manufacturing a semiconductor device are described.

Abstract: A wafer carrier comprises a first foil, a second foil, and a chamber between the first and the second foil. The first foil has a perforation and is used for carrying the wafer. The first and the second foil are connected to each other so as to form the chamber. The chamber is configured to be evacuated to form a vacuum in the chamber, the vacuum causes an underpressure at the perforation, the underpressure forms a carrying force to the wafer to be carried.

Abstract: An embodiment of a method of manufacturing a semiconductor device includes providing a semiconductor material that comprises SiC and forming an electrically conductive contact layer on the semiconductor material. A non-ohmic contact is formed between the semiconductor material and the electrically conductive contact layer. The electrically conductive contact layer comprises a metal nitride with a nitrogen content between 10 to 50 atomic %. Additional embodiments of manufacturing a semiconductor device are described.

Abstract: A wafer carrier comprises a first foil, a second foil, and a chamber between the first and the second foil. The first foil has a perforation and is used for carrying the wafer. The first and the second foil are connected to each other so as to form the chamber. The chamber is configured to be evacuated to form a vacuum in the chamber, the vacuum causes an underpressure at the perforation, the underpressure forms a carrying force to the wafer to be carried.

Abstract: A method for forming semiconductor devices includes attaching a glass structure to a wide band-gap semiconductor wafer having a plurality of semiconductor devices. The method further includes forming at least one pad structure electrically connected to at least one doping region of a semiconductor substrate of the wide band-gap semiconductor wafer, by forming electrically conductive material within at least one opening extending through the glass structure.

Abstract: A method of processing a power semiconductor device includes: providing a semiconductor body of the power semiconductor device; coupling a mask to the semiconductor body; and subjecting the semiconductor body to an ion implantation such that implantation ions traverse the mask prior to entering the semiconductor body.

Abstract: A wafer carrier comprises a first foil, a second foil, and a chamber between the first and the second foil. The first foil has a perforation and is used for carrying the wafer. The first and the second foil are connected to each other so as to form the chamber. The chamber is configured to be evacuated to form a vacuum in the chamber, the vacuum causes an underpressure at the perforation, the underpressure forms a carrying force to the wafer to be carried.

Abstract: According to various embodiments, a substrate carrier may include: a substrate-supporting region for supporting a substrate; wherein a first portion of the substrate-supporting region including a pore network of at least partially interconnected pores; wherein a second portion of the substrate-supporting region surrounds the first portion and includes a sealing member for providing a contact sealing; at least one evacuation port for creating a vacuum in the pore network, such that a substrate received over the substrate-supporting region is adhered by suction; and at least one valve configured to control a connection between the pore network and the at least one evacuation port, such that a vacuum can be maintained in the pore network; wherein the pore network includes a first pore characteristic in a first region and a second pore characteristic in a second region different from the first pore characteristic.

Abstract: A semiconductor device includes an n-doped monocrystalline semiconductor substrate having a substrate surface, an amorphous n-doped semiconductor surface layer at the substrate surface of the n-doped monocrystalline semiconductor substrate, and a Schottky-junction forming material in contact with the amorphous n-doped semiconductor surface layer. The Schottky-junction forming material forms at least one Schottky contact with the amorphous n-doped semiconductor surface layer.

Abstract: A method for processing a semiconductor includes irradiating a surface of a semiconductor with ions of a first gas type for cleaning the surface and implanting of ions of a second gas type in a region below the surface of the semiconductor for creating defects in the region below the surface. The irradiating and the implanting are performed within the same chamber.

Abstract: A semiconductor device includes a semiconductor material having a bandgap larger than 2 eV and less than 10 eV, and a contact layer in contact with the semiconductor material. The contact layer includes a metal nitride. A non-ohmic contact is formed between the semiconductor material and the contact layer.

Abstract: A method for producing semiconductor regions including impurities includes forming a trench in a first surface of a semiconductor body. Impurity atoms are implanted into a bottom of the trench. The trench is extended deeper into the semiconductor body, thereby forming a deeper trench. Impurity atoms are implanted into a bottom of the deeper trench.

Abstract: A method for producing semiconductor regions including impurities includes forming a trench in a first surface of a semiconductor body. Impurity atoms are implanted into a bottom of the trench. The trench is extended deeper into the semiconductor body, thereby forming a deeper trench. Impurity atoms are implanted into a bottom of the deeper trench.