Patents by Inventor Roozbeh Tabrizian

Roozbeh Tabrizian has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210359664
    Abstract: An adaptive RF acoustic resonator contains tunable and switchable hybrid surface-bulk acoustic waves (SAW-BAW). The surface and bulk acoustic waves couple for the spectral sensing and configurable filtering. The acoustic resonator includes a piezoelectric or ferroelectric layer, such as a SLAIN layer, which is patterned into interdigital transducers, and an intermediate layer of AlGaN—GaN, which is built on a SiC substrate. The device is protected under a plastic packaging cap. An external tuning voltage applies on the acoustic resonator to generate the tunable frequency and bandwidth of the bulk and surface acoustic waves. An RF switch generates an electric field to suppress a residual polarization during acoustic resonator switching. The bulk acoustic wave excited in the piezoelectric or ferroelectric layer couples with the surface acoustic wave propagating in the intermediate layer. The Sc concentration in the ferroelectric layer exceeds 28%.
    Type: Application
    Filed: May 7, 2021
    Publication date: November 18, 2021
    Inventor: Roozbeh TABRIZIAN
  • Publication number: 20210258697
    Abstract: A ferroelectric transducer includes, in part, a first electrode positioned above a substrate; a composite stack positioned above the first electrode, and a second electrode positioned above the composite stack. The composite stack may include one or more alternate layers of a ferroelectric layer and a transition-metal nitride layer. The transition-metal nitride layer can be positioned above a corresponding ferroelectric layer, except the topmost ferroelectric layer in the composite stack. The ferroelectric layer comprises a scandium-doped aluminum nitride (ScxAl1-xN) film, wherein 0<x<1.
    Type: Application
    Filed: February 8, 2021
    Publication date: August 19, 2021
    Inventors: Roozbeh Tabrizian, Farid S. Alokozai
  • Publication number: 20210257987
    Abstract: A digitally tunable acoustic wave resonator includes, in part, a first electrode positioned above a substrate, a composite stack positioned above the first electrode, and a second electrode positioned above the composite stack. The composite stack may include one or more alternate layers of a ferroelectric layer and a transition-metal nitride layer. The transition-metal nitride layer can be positioned above the ferroelectric layer, except the ferroelectric layer at the top of the composite stack. The ferroelectric layer comprises an aluminum scandium nitride layer Al1-xScxN, where 0<x<1.
    Type: Application
    Filed: February 11, 2021
    Publication date: August 19, 2021
    Inventor: Roozbeh Tabrizian
  • Publication number: 20210221675
    Abstract: A method for fabricating nano-electro-mechanical tags for identification and authentication includes, in part, forming a protective layer above a substrate, forming a first conductive layer above the protective layer serving as a first electrode, forming a piezoelectric layer above the first conductive layer, forming a second conductive layer above the piezoelectric layer, patterning the second conductive layer to form a second electrode, patterning the piezoelectric layer to expose one or more portions of the first conductive layer, and forming one or more trenches that extends into a plurality layers formed above. In addition, a sacrificial layer can be formed above portions of the substrate, and the sacrificial layer can be removed by etching to release the nano-electro-mechanical tags from the substrate.
    Type: Application
    Filed: January 19, 2021
    Publication date: July 22, 2021
    Inventors: Roozbeh Tabrizian, Swarup Bhunia
  • Publication number: 20210184652
    Abstract: A method for fabricating an acoustic wave resonator includes, in part, forming a micro-fin structure that includes one or more sidewalls on a substrate. The sidewalls are thereafter annealed. A bottom electrode layer is then deposited on top of the micro-fin structure. Afterwards, a layer of aluminum nitride is formed on the bottom electrode layer where the layer of aluminum nitride includes a textured aluminum nitride layer with a c-axis substantially perpendicular to the one or more sidewalls. A top electrode layer is then formed on top of the layer of aluminum nitride. In addition, the top electrode layer can be patterned, and the layer of aluminum nitride can be etched to provide access windows to the bottom electrode layer.
    Type: Application
    Filed: December 11, 2020
    Publication date: June 17, 2021
    Inventors: Roozbeh Tabrizian, Farid S. Alokozai
  • Publication number: 20210184653
    Abstract: An acoustically coupled RF filter system includes, in part, a first conductive layer, a ferroelectric layer, and a second conductive layer, wherein the second conductive layer includes a plurality of interdigital transducers (IDTs) formed thereon. The ferroelectric layer can be positioned above the first conductive layer, and there is a semi-trench formed in the ferroelectric layer. The second conductive layer can be positioned above the ferroelectric layer. The plurality of IDTs is formed by patterning the second conductive layer and forms an RF filter input and an RF filter output. The ferroelectric layer comprises Al1-xScxN, wherein 0<x<1.
    Type: Application
    Filed: December 10, 2020
    Publication date: June 17, 2021
    Inventor: Roozbeh Tabrizian
  • Patent number: 10985741
    Abstract: The structure of a frequency synthesizer for acoustic waves includes an input narrow band transducer in its input arm for receiving an input electric signal at an input frequency, a wide band transducer in its output arm for supplying an output signal; and a perforated region formed of a two dimensional array of cavities disposed between the first and second arms. The first arm contains multiple metal fingers, disposed perpendicular to the first arm and spaced apart from one another at a distance of the wavelength of the input signal to ensure acoustic excitation in the first arm at the input frequency. The second arm contains a single finger to accommodate a non-linear output signal oscillating at a harmonic of the first frequency. The frequency synthesizer can be patterned in aluminum nitride (AlN) in a silicon substrate.
    Type: Grant
    Filed: May 9, 2019
    Date of Patent: April 20, 2021
    Assignee: UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INCORPORATED
    Inventors: Roozbeh Tabrizian, Mayur Ghatge
  • Publication number: 20200336136
    Abstract: The structure of a frequency synthesizer for acoustic waves includes an input narrow band transducer in its input arm for receiving an input electric signal at an input frequency, a wide band transducer in its output arm for supplying an output signal; and a perforated region formed of a two dimensional array of cavities disposed between the first and second arms. The first arm contains multiple metal fingers, disposed perpendicular to the first arm and spaced apart from one another at a distance of the wavelength of the input signal to ensure acoustic excitation in the first arm at the input frequency. The second arm contains a single finger to accommodate a non-linear output signal oscillating at a harmonic of the first frequency. The frequency synthesizer can be patterned in aluminum nitride (AlN) in a silicon substrate.
    Type: Application
    Filed: May 9, 2019
    Publication date: October 22, 2020
    Inventors: Roozbeh Tabrizian, Mayur Ghatge
  • Publication number: 20200259479
    Abstract: A Fin Bulk Acoustic Resonator (FinBAR) includes a fin integrally fabricated on a substrate of a glass or a semiconductor, an inner electrode deposited on the fin, a piezoelectric layer disposed on the inner electrode, an outer electrode deposited on the piezoelectric layer, a first electrode and a second electrode formed on the top surface of the substrate and connected to the inner and outer electrodes respectfully. The fin is characterized with a larger height than its width. A FinBAR array including a number of the FinBARs with different fin widths sequentially located on one chip is capable of continuously filtering frequencies in UHF and SHF bands.
    Type: Application
    Filed: August 17, 2018
    Publication date: August 13, 2020
    Inventor: Roozbeh TABRIZIAN
  • Publication number: 20200228095
    Abstract: A tunable non-reciprocal frequency limiter with an asymmetric micro-electro-mechanical resonator has two independent transducer ports. One port has a film stack including a 10 nm hafnium zirconium oxide (HZO) and another port has a film stack including a 120 nm aluminum nitride (AlN) film. These film stacks are deposited on top of 70 nm single crystal silicon substrate applying CMOS compatible fabrication techniques. The asymmetric transducer architecture with dissimilar electromechanical coupling coefficients force the resonator into mechanical nonlinearity on actuation with transducer having larger coupling. A proof-of-concept electrically-coupled channel filter is demonstrated with two such asymmetric resonators at ˜253 MHz with individual Qres of ˜870 and a non-reciprocal transmission ratio (NTR) ˜16 dB and BW3dB of 0.25%.
    Type: Application
    Filed: January 8, 2020
    Publication date: July 16, 2020
    Inventors: Roozbeh Tabrizian, Mayur Ghatge
  • Publication number: 20200202832
    Abstract: An acoustic waveguide having high-Q resonator characteristics is disclosed and a fabrication method is described. Various waveguide-based test-vehicles, implemented in single crystal silicon and transduced by thin aluminum nitride films, are demonstrated. Silicon resonators with type-I and type-II dispersion characteristics are presented to experimentally justify the analytical mode synthesis technique for realization of high quality-factor silicon Lamb wave resonators. An analytical design procedure is also presented for geometrical engineering of the waveguides to realize high-Q resonators without the need for geometrical suspension through narrow tethers or rigid anchors. The effectiveness of the dispersion engineering methodology is verified through development of experimental test-vehicles in 20 ?m-thick single-crystal silicon (SCS) waveguides with 500 nm aluminum nitride transducers.
    Type: Application
    Filed: December 13, 2019
    Publication date: June 25, 2020
    Inventor: Roozbeh Tabrizian
  • Publication number: 20200177152
    Abstract: A nano-mechanical acoustical resonator is designed and fabricated with CMOS compatible techniques to apply to mm-wave RF front-ends and 5G wireless communication systems which have extreme small scale and integrated in 3D sensors and actuators. Thin hafnium zirconium oxide (HZO) films are engineered with atomic layer deposition (ALD) to demonstrate large piezoelectric ferroelectric properties (piezoelectric coefficient e31,HZO?23e31,AlN. Various electrical and optical characterization schemes are also used as test-vehicles to characterize ferroelectric and piezoelectric properties, including isolated 10 nm HZO- and 120 nm AlN-transduction ports. The low-temperature and truly conformal nature of ALD process of HZO offers substantial advantages over conventional magnetronsputtered/MOCVD films, including CMOS-compatibility and sidewall transducer integration.
    Type: Application
    Filed: November 22, 2019
    Publication date: June 4, 2020
    Inventors: Mayur GHATGE, Glen H. WALTERS, Toshikazu NISHIDA, Roozbeh TABRIZIAN
  • Patent number: 10586135
    Abstract: Data is encoded for identification and labeling using a multitude of nano-electro-mechanical structures formed on a substrate. The number of such structures, their shapes, choice of materials, the spacing therebetween and the overall distribution of the structures result in a vibrational pattern or an acoustic signature that uniquely corresponds to the encoded data. A first group of the structures is formed in conformity with the design rules of a fabrication process used to manufacture the device that includes the structures. A second group of the structures is formed so as not to conform to the design rules and thereby to undergo variability as a result of the statistical variations that is inherent in the fabrication process.
    Type: Grant
    Filed: June 18, 2018
    Date of Patent: March 10, 2020
    Assignee: University of Florida Research Foundation, Incorporated
    Inventors: Roozbeh Tabrizian, Swarup Bhunia
  • Publication number: 20190188546
    Abstract: Data is encoded for identification and labeling using a multitude of nano-electro-mechanical structures formed on a substrate. The number of such structures, their shapes, choice of materials, the spacing therebetween and the overall distribution of the structures result in a vibrational pattern or an acoustic signature that uniquely corresponds to the encoded data. A first group of the structures is formed in conformity with the design rules of a fabrication process used to manufacture the device that includes the structures. A second group of the structures is formed so as not to conform to the design rules and thereby to undergo variability as a result of the statistical variations that is inherent in the fabrication process.
    Type: Application
    Filed: June 18, 2018
    Publication date: June 20, 2019
    Inventors: Roozbeh Tabrizian, Swarup Bhunia
  • Patent number: 9917571
    Abstract: Certain implementations of the disclosed technology may include systems and methods for high-frequency resonant gyroscopes. In an example implementation, a resonator gyroscope assembly is provided. The resonator gyroscope assembly can include a square resonator body suspended adjacent to a substrate, a ground electrode attached to a side of the resonator body, a piezoelectric layer attached to a side of the ground electrode, a drive electrode in electrical communication with the piezoelectric layer, and configured to stimulate one or more vibration modes of the square resonator body; and a sense electrode in electrical communication with the piezoelectric layer, and configured to receive an output from the square or disk resonator responsive to stimulation of the one or more vibration modes.
    Type: Grant
    Filed: June 15, 2015
    Date of Patent: March 13, 2018
    Assignee: Georgia Tech Research Corporation
    Inventors: Farrokh Ayazi, Roozbeh Tabrizian, Mojtaba Hodjat-Shamami, Arashk Norouzpour-Shirazi
  • Publication number: 20170038211
    Abstract: Certain implementations of the disclosed technology may include systems and methods for high-frequency resonant gyroscopes. In an example implementation, a resonator gyroscope assembly is provided. The resonator gyroscope assembly can include a square resonator body suspended adjacent to a substrate, a ground electrode attached to a side of the resonator body, a piezoelectric layer attached to a side of the ground electrode, a drive electrode in electrical communication with the piezoelectric layer, and configured to stimulate one or more vibration modes of the square resonator body; and a sense electrode in electrical communication with the piezoelectric layer, and configured to receive an output from the square or disk resonator responsive to stimulation of the one or more vibration modes.
    Type: Application
    Filed: June 15, 2015
    Publication date: February 9, 2017
    Inventors: Farrokh Ayazi, Roozbeh Tabrizian, Mojtaba Hodjat-Shamami, Arashk Norouzpour-Shirazi
  • Patent number: 9318998
    Abstract: An integrated circuit device includes a multi-port piezoelectric-on-semiconductor microelectromechanical resonator, which is configured to support independent and concurrent piezoelectric transduction of multiple resonance modes. The resonator includes a semiconductor resonator body (e.g., Si body) suspended opposite an underlying recess in a substrate. Opposite ends of the semiconductor resonator body are anchored to the substrate. The resonator body may be formed so that a plan layout view of a portion of the semiconductor resonator body is dumbbell-shaped to thereby support acoustic energy trapping of multiple high-Q resonance modes.
    Type: Grant
    Filed: August 30, 2013
    Date of Patent: April 19, 2016
    Assignee: Georgia Tech Research Corporation
    Inventors: Roozbeh Tabrizian, Farrokh Ayazi
  • Patent number: 8519598
    Abstract: Microelectromechanical resonators include a resonator body having a first piezoelectric layer on a upper surface thereof, which is configured to support actuation and sensing through a transverse piezoelectric effect (e31), and a second piezoelectric layer on at least a portion of a first sidewall thereof, which is configured to support actuation and sensing through a longitudinal piezoelectric effect (e33), where e33 is greater than e31. These resonators may further include a first bottom electrode extending between the first piezoelectric layer and the upper surface of the resonator body and a second bottom electrode extending between the second piezoelectric layer and the first sidewall of the resonator body. These first and second bottom electrodes may be contiguous as a single bottom electrode and the first and second piezoelectric layers may be contiguous as a single piezoelectric layer.
    Type: Grant
    Filed: July 3, 2011
    Date of Patent: August 27, 2013
    Assignee: Georgia Tech Research Corporation
    Inventors: Farrokh Ayazi, Roozbeh Tabrizian
  • Patent number: 8381378
    Abstract: A method of forming a micromechanical resonator includes forming a resonator body anchored to a substrate by at least a first anchor. This resonator body may include a semiconductor or other first material having a negative temperature coefficient of elasticity (TCE). A two-dimensional array of spaced-apart trenches are provided in the resonator body. These trenches may be filled with an electrically insulating or other second material having a positive TCE. The array of trenches may extend uniformly across the resonator body, including regions in the body that have relatively high and low mechanical stress during resonance. This two-dimensional array (or network) of trenches can be modeled as a network of mass-spring systems with springs in parallel and/or in series with respect to a direction of a traveling acoustic wave within the resonator body during resonance.
    Type: Grant
    Filed: June 4, 2010
    Date of Patent: February 26, 2013
    Assignee: Georgia Tech Research Corporation
    Inventors: Farrokh Ayazi, Roozbeh Tabrizian, Giorgio Casinovi
  • Publication number: 20100319185
    Abstract: A method of forming a micromechanical resonator includes forming a resonator body anchored to a substrate by at least a first anchor. This resonator body may include a semiconductor or other first material having a negative temperature coefficient of elasticity (TCE). A two-dimensional array of spaced-apart trenches are provided in the resonator body. These trenches may be filled with an electrically insulating or other second material having a positive TCE. The array of trenches may extend uniformly across the resonator body, including regions in the body that have relatively high and low mechanical stress during resonance. This two-dimensional array (or network) of trenches can be modeled as a network of mass-spring systems with springs in parallel and/or in series with respect to a direction of a traveling acoustic wave within the resonator body during resonance.
    Type: Application
    Filed: June 4, 2010
    Publication date: December 23, 2010
    Inventors: Farrokh Ayazi, Roozbeh Tabrizian, Giorgio Casinovi